柔性感知显示实验室 Flexible Sensing Display Lab
陆磊课题组

科研成果

专利(合计12项专利授权,6项专利申请)

一、已授权专利12项:美国专利3项,中国发明专利5项,中国实用新型4项

  • 陆磊,周玮,王文,郭海成,Integration of Silicon Thin-Film Transistors and Metal-Oxide Thin-Film Transistors美国专利10,504,939 B2授权,2017年2月20日。
  • 陆磊,王文,郭海成,METAL OXIDE THIN FILM TRANSISTOR WITH SOURCE AND DRAIN REGIONS DOPED AT ROOM TEMPERATURE美国专利9,960,281 B2授权,2015年2月9日。
  • 陆磊,王文,郭海成,METAL OXIDE THIN FILM TRANSISTOR WITH CHANNEL , SOURCE AND DRAIN REGIONS RESPECTIVELY CAPPED WITH COVERS OF DIFFERENT GAS PERMEABILITY美国专利10,032,924 B2授权2014年3月31日。
  • 陆磊,王文,郭海成,一种薄膜晶体管及制造方法和显示器面板中国发明专利9授权,2016年10月28日。
  • 陆磊,王文,郭海成,一种电路结构及制作方法和显示器面板中国发明专利7授权,2016年10月28日。
  • 陆磊,王文,郭海成,一种薄膜晶体管及制造方法和显示器面板中国发明专利申请1授权,2016年10月28日。
  • 陆磊,王文,郭海成,一种显示器面板及制造方法中国发明专利8授权,2016年10月28日。
  • 陆磊,王文,郭海成,一种薄膜晶体管及制造方法和显示器面板中国发明专利7授权,2016年10月28日。
  • 李佳鹏,陆磊,王文,郭海成, 一种薄膜晶体管和显示器面板中国实用新型专利ZL 2017 2 1522557.7授权,2017年11月15日。
  • 陆磊,王文,郭海成, 一种薄膜晶体管和显示器面板中国实用新型专利ZL 2016 2 1191789.3授权,2016年10月28日。
  • 陆磊,王文,郭海成,一种薄膜晶体管和显示器面板中国实用新型专利ZL 2016 2 1190870.0授权,2016年10月28日。
  • 陆磊,王文,郭海成,一种显示器面板中国实用新型专利ZL 2016 2 1188654.2授权,2016年10月28日。

 

二、专利申请6项:美国专利申请4项,中国发明专利申请2项

  • 王思思,王文,李佳鹏,夏之荷,陆磊,郭海成,Metal-Oxide Schottky Diode and Fabrication Method Therefor美国专利申请63/102,358,2020年6月11日。
  • 姜毅斌,董首成,陆磊,谭兆霆,邓青云,Shadow Mask and Method of Fabricating The Same美国专利申请63/101,831,2019年5月15日。
  • 陆磊,王文,郭海成,周贤达,王凯,Metal-Oxide Schottky Diode and Fabrication Method Therefor美国专利申请62/920,919,2019年5月23日。
  • 陆磊,夏之荷,李佳鹏,王文,郭海成,Vertical Metal-Oxide Thin-Film Transistor with Multiple-Junction Channel and Method of Fabricating the Same美国专利申请15/581,322,2017年4月28日。
  • 陆磊,孙梽博,夏之荷,施闰霄,王文,郭海成,液晶显示面板及其制作方法以及显示设备中国发明专利申请9,2019年5月10日。
  • 陆磊,夏之荷,李佳鹏,王文,郭海成,显示面板及其制作方法以及显示设备中国发明专利申请7,2019年5月10日。

 

 

论文 (合计26篇期刊论文,38篇会议论文)

一、一作/通讯SCI期刊论文13篇:(#共同一作,*通讯作者)

  • Lv#, L. Lu#, Z. Wang, H. Wang, D. Zhang, M. Wong, M. Wang, “Suppression of the Short-Channel Effect in Dehydrogenated Elevated-Metal Metal-Oxide (EMMO) Thin-Film Transistors,” IEEE Trans. Electron Devices, vol. 67, no. 7, pp. 3001–3004, Jul. 2020.
  • Zhou#, L. Lu#, Jin Wei, Yang Liu, K. Wang*, M. Wong, J. K. O. Sin, and H.-S. Kwok,, “Extracting the Critical Breakdown Electrical Field of Amorphous Indium-Gallium-Zinc-Oxide from the Avalanche Breakdown of n-Indium-Gallium-Zinc-Oxide/p+-Nickel-Oxide Heterojunction Diode,” IEEE Electron Device Lett., vol. 41, no. 7, pp. 1–1, 2020.
  • Peng, B. Chang, H. Fu, H. Yang, Y. Zhang, X. Zhou, L. Lu*, S. Zhang*, “Top-Gate Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors With Magnesium Metallized Source/Drain Regions,” IEEE Trans. Electron Devices, vol. 64, no. 7, pp. 1619–1624, 2020.
  • Zhou#, L. Lu#, K. Wang*, M. Wong, J. K. O. Sin, and H.-S. Kwok, “Low-Temperature-Processed Power Schottky Diode Based on Amorphous Indium-Tin-Zinc-Oxide/Indium-Gallium-Zinc-Oxide Bilayer,” IEEE Trans. Electron Devices, vol. 66, no. 11, pp. 4759–4763, Nov. 2019.
  • Lu#*, Z. Feng#, S. Wang, J. Li, Z. Xia, H. Kwok, and M. Wong, “Fluorination-Enabled Monolithic Integration of Enhancement- and Depletion-Mode Indium-Gallium-Zinc Oxide TFT,” IEEE Electron Device Lett., vol. 39, no. 5, pp. 692–695, 2018.
  • Lu*, Z. Xia, J. Li, Z. Feng, S. Wang, H. Kwok, and M. Wong, “A Comparative Study on Fluorination and Oxidation of Indium-Gallium-Zinc Oxide Thin-Film Transistors,” IEEE Electron Device Lett., vol. 39, no. 2, pp. 196–199, 2018.
  • Lu, J. Li, H. S. Kwok, and M. Wong*, “Elevated-Metal Metal-Oxide (EMMO) Thin-Film Transistor: Technology and Characteristics,” IEEE Electron Device Lett., vol. 37, no. 6, pp. 728–730, 2016.
  • Lu, J. Li, and M. Wong*, “Thermally Induced Variation of the Turn-ON Voltage of an Indium-Gallium-Zinc Oxide Thin-Film Transistor,” IEEE Trans. Electron Devices, vol. 62, no. 11, pp. 3703–3708, 2015.
  • Lu* and M. Wong*, “A Bottom-Gate Indium-Gallium-Zinc Oxide Thin-Film Transistor With an Inherent Etch-Stop and Annealing-Induced Source and Drain Regions,” IEEE Trans. Electron Devices, vol. 62, no. 2, pp. 574–579, 2015.
  • Lu*, J. Li, and M. Wong, “A Comparative Study on the Effects of Annealing on the Characteristics of Zinc Oxide Thin-Film Transistors with Gate-Stacks of Different Gas-Permeability,” IEEE Electron Device Lett., vol. 35, no. 8, pp. 841–843, 2014.
  • Lu* and M. Wong*, “The Resistivity of Zinc Oxide Under Different Annealing Configurations and Its Impact on the Leakage Characteristics of Zinc Oxide Thin-Film Transistors,” IEEE Trans. Electron Devices, vol. 61, no. 4, pp. 1077–1084, 2014.
  • Lu, M. Wang*, and M. Wong, “A New Observation of the Elliot Curve Waveform in Charge Pumping of Poly-Si TFTs,” IEEE Electron Device Lett., vol. 32, no. 4, pp. 506–508, 2011.
  • Lu, M. Wang*, and M. Wong, “Geometric Effect Elimination and Reliable Trap State Density Extraction in Charge Pumping of Polysilicon Thin-Film Transistors,” IEEE Electron Device Lett., vol. 30, no. 5, pp. 517–519, 2009.

 

二、其它SCI期刊论文12篇:

  • Xia, X. Liu, R. Shi, J. Li, L. Lu, H. S. Kwok, and M. Wong “A Timing Model for the Optimal Design of a Prototype Active-Matrix Display,IEEE Trans. Electron Devices, pp. 3167-3174, 2020.
  • Wang, J. Li, R. Shi, Z. Xia, L. Lu, H. S. Kwok, M. Wong*, “Fluorinated Indium-Gallium-Zinc Oxide Thin-Film Transistor with Reduced Vulnerability to Hydrogen-Induced Degradation,” Journal of the Society for Information Display, Doi: 10.1002/jsid.914, 2020.
  • Wang, R. Shi, J. Li, L. Lu, Z. Xia, H. S. Kwok, M. Wong*, “Resilience of Fluorinated Indium-Gallium-Zinc Oxide Thin-Film Transistor against Hydrogen-Induced Degradation,” IEEE Electron Device Lett., DOI: 10.1109/LED.2020.2983789, 2020.
  • Xia, L. Lu, J. Li, H. Kwok, and M. Wong*, “A Bottom-Gate Metal-Oxide Thin-Film Transistor with Self-Aligned Source/Drain Regions,” IEEE Trans. Electron Devices, vol. 65, no. 7, pp. 2820–2826, 2018.
  • Yang, D. Zhang*, M. Wang, L. Lu, M. Wong, “Suppressed Degradation of Elevated-Metal Metal-Oxide Thin-Film Transistors Under Bipolar Gate Pulse Stress,” IEEE Electron Device Lett., vol. 39, no. 5, pp. 707–710, 2018.
  • Chan*, D. Lin, L. Lu, D. Zhang, S. Guo, Y. Zhang, K. Chau, M. Wong*, “Realization and Characterization of a Bulk-Type All-Silicon High Pressure Sensor,” J. Microelectromechanical Syst., vol. 27, no. 2, pp. 231–238, 2018. (国际顶级传感器期刊)
  • Li, L. Lu, H. S. Kwok, and M. Wong*, “Three-Mask Elevated-Metal Metal-Oxide Thin-Film Transistor with Self-Aligned Definition of the Active Island,” IEEE Electron Device Lett., vol. 39, no. 1, pp. 35–38, 2018.
  • Li*, L. Lu, H. S. Kwok, and M. Wong, “A Physical Model for Metal-Oxide Thin-Film Transistor Under Gate-Bias and Illumination Stress,” IEEE Trans. Electron Devices, vol. 65, no. 1, pp. 142–149, 2017.
  • Xia, L. Lu, J. Li, Z. Feng, S. Deng, S. Wang, H. S. Kwok, and M. Wong*, “Characteristics of Elevated-Metal Metal-Oxide Thin-Film Transistors Based on Indium-Tin-Zinc Oxide,” IEEE Electron Device Lett., vol. 38, no. 7, pp. 894–897, 2017.
  • Li*, L. Lu, Z. Feng, H. S. Kwok, and M. Wong*, “An oxidation-last annealing for enhancing the reliability of indium-gallium-zinc oxide thin-film transistors,” Appl. Phys. Lett., vol. 110, no. 14, pp. 142102–1–4, 2017.
  • Ye, M. Wong, M.-T. Ng, K.-H. Chui, C.-K. Kong, L. Lu, T. Liu, and J. K. Luo, “High Precision Active-Matrix Self-Capacitive Touch Panel Based on Fluorinated ZnO Thin-Film Transistor,” J. Disp. Technol., vol.11, no. 1, pp. 22–29, 2015.
  • Ye, L. Lu, and M. Wong*, “Zinc-Oxide Thin-Film Transistor With Self-Aligned Source/Drain Regions Doped With Implanted Boron for Enhanced Thermal Stability,” IEEE Trans. Electron Devices, vol. 59, no. 2, pp. 393–399, 2012.
  • Kwan*, S. Song, X. Lu, Lu, et al., “Improved Designs for An Electrothermal in-Plane Microactuator,” J. Microelectromechanical Syst., vol. 21, no. 3, pp. 586–595, 2012.

 

三、一作/通讯国际会议论文17篇,其中邀请报告5篇:

  • Zhang, Z. Xia, J. Li, Y. Shao, S. Wang, L. Lu* (邀请报告), S. Zhang, H. S. Kwok, M. Wong, “Systematic Defect Manipulation in Metal Oxide Semiconductors towards High-Performance Thin-Film Transistors,” 4th Electron Devices Technology and Manufacturing Conference (EDTM), Penang, pp. 1–4, Mar. 2020.
  • Peng, B. Chang, H. Fu, H. Yang, Y. Zhang, X. Zhou, L. Lu*, S. Zhang, “Self-Aligned Top-Gate Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistors with Source/Drain Regions Formed by Argon-Plasma Enhanced Aluminum Reaction Method,” Postgraduate Workshop on Display Research, Hsinchu, Aug. 2019. (最佳海报奖)
  • Lu (邀请报告,Young Leaders), Z. Xia, J. Li, S. Zhang, H. S. Kwok, and M. Wong, “Elevated-Metal Metal-Oxide (EMMO) Thin-Film Transistor with Annealing-Induced Source/Drain Regions,” Int. Meet. Inf. Disp., Gyeongju, YCL, Aug. 2019.
  • Lu (邀请报告,及分会场主席),L. Nan, J. Li, et al., “Enhanced Elevated-Metal Metal-Oxide (EMMO) TFTs for Advanced Displays,” Int. Con. on Disp. Tech., S15.3, Kunshan, Mar. 2019.
  • Lu* (邀请报告,及分会场主席), M. Wong, “Metal-Oxide Circuits Based on Monolithic Integration of Enhancement- & Depletion-Mode TFTs,” Int. Conf. on Computer Aided Design for Thin-Film Transistor, Shenzhen, Nov. 2018.
  • Lu, J. Li, Z. Xia, S. Wang, H. S. Kwok, and M. Wong, “8.1: Invited Paper: Enhanced Elevated-Metal Metal-Oxide Thin-Film Transistor Technology,” SID Symp. Dig. Tech. Pap., vol. 49, no. c, pp. 75–78, Apr. 2018.
  • Lu, J. Li, N. Lv, Z. Xia, Z. Feng, S. Wang, M. Wong, and H. S. Kwok, “24.3: Short-Channel Indium-Gallium-Zinc Oxide Thin-Film Transistor Enabled by Thermal Dehydrogenation and Oxidizing Defect-Suppression,” SID Symp. Dig. Tech. Pap., vol. 49, no. L, pp. 255–258, 2018.
  • Xia, J. Li, L. Lu* (邀请报告), et al., “A Study on Self-Aligned Bottom-Gate Elevated-Metal Metal-Oxide Thin-Film Transistors,” Int. Thin-Film Transistor Conf., Guangzhou, pp. 67, Feb. 2018.
  • Xia, L. Lu*, J. Li, et al., “The Use of Fluorination to Enhance the Performance and the Reliability of Elevated-Metal Metal-Oxide Thin-Film Transistors,” SID Symp. Dig. Tech. Pap., Los Angeles, vol. 49, no. 1, pp. 1235–1238, May 2018. (国际顶级信息显示技术会议)
  • Lu,J. Li, Z. Xia, et al., “Enhanced Scalability and Reliability of Indium-Gallium-Zinc Oxide Thin-Film Transistor Using a Combination of Plasma Fluorination and Thermal Oxidization,” Int. Disp. Workshops, Sendai, pp. 344–347, Dec. 2017.
  • Lu, J. Li, Z. Xia, et al., “Short-Channel Elevated-Metal Metal-Oxide (EMMO) Thin-Film Transistor with Dehydrogenated Passivation Etch-Stop Layer,” Int. Disp. Manuf. Conf., Taipei, pp. S16–04, Sep. 2017.
  • Lu, J. Li, H. Kwok, and M. Wong, “High-Performance and Reliable Elevated-Metal Metal-Oxide Thin-Film Transistor for High-Resolution Displays,” 62nd IEEE Int. Electron Device Meet. (IEDM), San Francisco, pp. 802–805,Dec. 2016. (国际最顶级微电子学会议)
  • Lu, J. Li, H. Kwok, and M. Wong, “Elevated Metal Metal-Oxide Thin-Film Transistor – A New Bottom-Gate Transistor Architecture for Flat-Panel Displays,” 13th IEEE Int. Conf. Solid-State Integr. Circuit Technol., Hangzhou, pp. S40–1–4, Oct. 2016.
  • Lu, J. Li, H. S. Kwok, and M. Wong, “Elevated-Metal Metal-Oxide (EMMO) Thin-Film Transistor with Annealing-Induced Source/Drain Regions,” 16th Int. Meet. Inf. Disp., Jeju, pp. 42–47, Aug. 2016.
  • Lu, Y. Jiang, J. Li, et al., “Annealing-Induced Depletion-Mode Indium-Gallium-Zinc Oxide Thin-Film Transistor and Its Application to Active-Matrix Organic Light-Emitting Diode Display,” Int. Disp. Manuf. Conf., Taipei, pp. S15–4, Aug. 2015.
  • Lu, M. Wang, and M. Wong, “Substrate current and its correlation with degradation of poly-Si thin film transistors,” IEEE Int. Symp. Phys. Fail. Anal. Integr. Circuits, Singapore, Jul. 2010.
  • Lu, M. Wang, and M. Wong, “Optimization of charge pumping technique in polysilicon TFTs for geometric effect elimination and trap state density extraction,” 9th IEEE Int. Conf. Solid-State Integr. Technol., Beijing, pp. 978–981, Oct. 2008. (最佳学生论文奖)

 

四、其它国际会议论文21篇:

  • Xia, L. Lu, J. Li, H. Kwok, and M. Wong, “Self-Aligned Elevated-Metal Metal-Oxide Thin-Film Transistors for Displays and Flexible Electronics,” 65th IEEE Int. Electron Device Meet. (IEDM), San Francisco, pp. 170–173,Dec. 2019. (国际最顶级微电子学会议)
  • Lin, E. Chan, Z. Tang, L. Lu, M. Wong, and K. Chau, “A 2000-Atmosphere Bulk-Type Pressure Sensor Realized on (001) Substrate with Selective Stress-Filtering Trenches,” in 2019 IEEE 32nd International Conference on Micro Electro Mechanical Systems (MEMS), 2019, no. January, pp. 739–742.
  • Wang, L. Lu, J. Li, et al., “Carrier concentration reduction by fluorine doping in p-type SnO thin film,” SID Symp. Dig. Tech. Pap., vol. 50, no. 1, pp. 1251–1254, Jun. 2019. (最佳论文奖)
  • Xia, X. Lu, L. Lu, J. Li, H. S. Kwok, and M. Wong, “1.3: A Timing Model for the Design of an Active‐Matrix Display,” SID Symp. Dig. Tech. Pap., vol. 50, no. S1, pp. 13–16, Sep. 2019.
  • Wong, Z. Xia, L. Lu, J. Li, and H. S. Kwok, “8.2: Invited Paper: Elevated‐Metal Metal‐Oxide Thin‐Film Transistor with Self‐Aligned Source/Drain Regions,” SID Symp. Dig. Tech. Pap., vol. 50, no. S1, pp. 75–78, Sep. 2019.
  • Chan, D. Lin, L. Lu, et al., “Trench-Isolated Bulk-Type Pressure Sensor on Silicon-on-Insulator for High-Temperature and High-Pressure Downhole Applications,” Hilton Head Workshop: A Solid-State Sensors, Actuators and Microsystems Workshop, Hilton Head Island (Carolina), pp. 198–201, Jun. 2018. (国际顶级传感器会议)
  • Li, L. Lu, Z. Xia, et al., “Three-Mask Elevated-Metal Metal-Oxide Thin-Film Transistor Technology for High-Resolution AMOLED Application,” SID Symp. Dig. Tech. Pap., Los Angeles, vol. 49, no. 1, pp. 1256–1259, May 2018.
  • Bebiche, S. Wang, L. Lu, et al., “Reliable Flexible EMMO IGZO TFTs Dedicated to Flexible Display Applications,” SID Symp. Dig. Tech. Pap., Los Angeles, vol. 49, no. 1, pp. 1587–1589, May 2018.
  • Xia, L. Lu, J. Li, H. S. Kwok, and M. Wong, “The use of fluorination to enhance the performance and the reliability of elevated-metal metal-oxide thin-film transistors,” SID Symp. Dig. Tech. Pap., vol. 49, no. 1, pp. 1235–1238, 2018.
  • Li, L. Lu, Z. Xia, S. Wang, H.-S. Kwok, and M. Wong, “P-1.5: Edge Effects of Three-Mask Elevated-Metal Metal-Oxide Thin-Film Transistor and Their Elimination,” SID Symp. Dig. Tech. Pap., vol. 49, no. Mask 1, pp. 531–534, Apr. 2018.
  • Wang, L. Lu, J. Li, Z. Xia, H. S. Kwok, and M. Wong, “P-1.4: Elevated-Metal Metal-Oxide Thin-Film Transistor with Fluorinated Indium-Gallium-Zinc Oxide Channel towards Flexible Applications,” SID Symp. Dig. Tech. Pap., vol. 49, pp. 528–530, Apr. 2018.
  • Xia, L. Lu, J. Li, et al., “Elevated-Metal Metal-Oxide Thin-Film Transistors Based on Indium-Tin-Zinc Oxide,” Int. Disp. Manuf. Conf., Taipei, pp. S16–03, Sep. 2017.
  • Wang, Z. Feng, S. Bebiche, L. Lu, et al., “Elevated-Metal Metal-Oxide (EMMO) Thin-Film Transistor with Fluorinated Indium-Gallium-Zinc Oxide Channel,” Int. Disp. Manuf. Conf., Taipei, pp. C–01, Sep. 2017.
  • Feng, L. Lu, W. Zhou, et al., “Differential Amplifier Based on IGZO Elevated-Metal Metal-Oxide (EMMO) Thin-Film Transistors, Simulation and Fabrication,” Int. Disp. Manuf. Conf., Taipei, pp. C–05, Sep. 2017.
  • Li, L. Lu, H. Kwok, and M. Wong, “On the Reliability of an InGaZnO Thin-Film Transistor under Negative Bias Illumination Stress,” 17th Int. Meet. on Infor. Disp., Busan, pp. 163–168, Aug. 2017.
  • Lin, E. Chan, L. Lu, et al., “A 1200-Atmosphere Bulk-Type All-Silicon Pressure Sensor,” The 19th Int. Conf. on Solid-State Sensors, Actuators and Microsystems, Transducers, Kaohsiung, pp. 2119–2122, Jun. 2017.
  • Zeng, L. Lu, Y. Zhang, S. Guo, M. Wong, and K. Chau, “MEMS Pressure Sensors for High-Temperature High- Pressure Downhole Applications,” IEEE Int. Conf. Electron Devices Solid-State Circuits, Hong Kong, pp. 43–47, Aug. 2016.
  • Feng, L. Lu, M. Wong, and H. Kwok, “Turn-ON Voltage Modulation of Indium-Gallium-Zinc-Oxide Thin-Film Transistors through Thermal Annealing Processes,” SID Symp. Dig. Tech. Pap., San Francisco, vol. 47, no. 1, pp. 1197–1199, May 2016.
  • Li, L. Lu and M. Wong, “Analysis of VON Shift Phenomenon on Indium-Gallium-Zinc Oxide Thin-Film Transistors with Thermal-Induced Source/Drain Regions,” Int. Disp. Manuf. Conf., Taipei, pp. CP3–011, Aug. 2015.
  • M. H. Kwan, S. Song, X. Lu, L. Lu, et al., “Designs for improving the performance of an electro-thermal in-plane actuator,” 2011 IEEE/IFIP 19th Int. Conf. VLSI Syst. VLSI-SoC 2011, Hong Kong, pp. 220–225, Oct. 2011.

X. Lu, M. Wang, K. Sun, and L. Lu, “Evaluation of self-heating and hot carrier degradation of poly-Si thin-film transistors using charge pumping technique,” IEEE Int. Reliab. Phys. Symp., Anaheim, pp. 1040–1043, May 2010.