柔性感知显示实验室 Flexible Sensing Display Lab
陆磊课题组

科研成果

专利 （已授权专利15项，专利申请16项）

一、已授权专利10项：美国专利4项，中国发明专利5项，中国实用新型1项

  1. 姜毅斌，董首成，陆磊，谭兆霆，邓青云，“Shadow Mask and Method of Fabricating The Same”，美国专利11,638,388 B2，2023年4月25日。
  2. 陆磊，周玮，王文，郭海成，“Integration of Silicon Thin-Film Transistors and Metal-Oxide Thin-Film Transistors”，美国专利10,504,939B2，授权，2017年2月20日。
  3. 陆磊，王文，郭海成，“METAL OXIDE THIN FILM TRANSISTOR WITH SOURCE AND DRAIN REGIONS DOPED AT ROOM TEMPERATURE”，美国专利9,960,281 B2，授权，2015年2月9日。
  4. 陆磊，王文，郭海成，“METAL OXIDE THIN FILM TRANSISTOR WITH CHANNEL , SOURCE AND DRAIN REGIONS RESPECTIVELY CAPPED WITH COVERS OF DIFFERENT GAS PERMEABILITY”，美国专利10,032,924，授权（2018-7-24），申请日2014年3月31日。
  5. 陆磊，张盛东，焦海龙，张敏，周航，周雨恒，王云萍，“一种应用于柔性薄膜晶体管阵列的结构”，中国发明专利2020 1 1592468.6，授权，2023年02月03日。
  6. 陆磊，张盛东，王鹏飞，王云萍，廖聪维，周晓梁，“显示面板的屏内传感器件结构及显示装置”，中国发明专利2020 1 1298874.1，授权，2023年02月07日。
  7. 陆磊，王云萍，张盛东，周晓梁,李莹，“全面屏结构以及用于屏下摄像头的OLED显示面板”，中国实用新型专利ZL 2021 2 2197756.8，授权，2021年9月13日。
  8. 陆磊，张盛东，张冠张，张立宁，李倩，王云萍，周雨恒，“双栅薄膜晶体管的结构及制造方法”，中国发明专利ZL 2020 1 1592482.6，授权，2023年07月18日。
  9. 董首成，姜毅斌，谭兆霆，陆磊，邓清云，“用于有机发光二极管材料图案化气相沉积的荫罩、包括其的荫罩模块及制造荫罩模块的方法”，中国发明专利ZL2021 14，授权，2024年05月07日。
  10. 陆磊,孙杰,王云萍,韩子娟,张猛,孙晨晅,王锐，“薄膜掩膜版夹具和薄膜掩膜版固定在夹具的固定方法”，中国发明专利ZL 20241 0065326.6，授权，2024年12月17日。

二、专利申请14项：美国专利申请2项，中国发明专利申请12项

  1. 韩子娟,陆磊,尹建刚,王云萍,王帆帆,张盛东，“一种空间阵列化 UV LED 光源及 AI 时域化控制光刻方法”，中国发明专利申请X，2024年11月29日。
  2. 陆磊,郑志炜,张盛东,王云萍,黄德猛，“一种具有肖特基接触的电子器件及其制备方法”，中国发明专利申请CN0，2024年10月21日。
  3. 陆磊,韩子娟,尹建刚,王云萍,王帆帆,张盛东，“一种光刻机及光源阵列化调节方法”，中国发明专利申请9，2024年9月14日。
  4. 陆磊，李潇，张盛东，王新炜，“一种有源层结构、制造方法以及半导体器件”，中国发明专利申请4，2023年5月4日。
  5. 陆磊，孙杰，韩子娟，李继麟，张盛东，王新炜，李潇，庄昌辉，“一种有源层制造方法以及半导体器件”，中国发明专利申请6，2023年5月4日。
  6. 陆磊，郑志炜，郑大伟，王云萍，蔡泽宇，杨丹，“一种肖特基光电二极管及其制造方法”，中国发明专利申请8，2023年4月26日。
  7. 陆磊，陈文龙;，韩子娟，王焱鑫，巫礼杰，张盛东，廖聪维，“一种薄膜晶体管有源层材料”，中国发明专利申请8，2023年4月26日。
  8. 陆磊，王文，郭海成，周贤达，王凯，“Metal-Oxide Schottky Diode and Fabrication Method Therefor”，美国专利申请62/920,919，2019年5月23日。
  9. 王思思，王文，李佳鹏，夏之荷，陆磊，郭海成，“METALLIZATION SCHEME FOR MONOLITHICALLY INTEGRATING METAL-OXIDE AND POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS”，美国专利申请63/102,358，2020年6月11日。
  10. 郑大伟，陆磊，张盛东，王云萍，严建花，蔡泽宇，“一种肖特基二极管及其制造方法”，中国发明专利申请6，2022年7月20日。
  11. 郑大伟，陆磊，张盛东，王云萍，严建花，蔡泽宇，“一种肖特基二极管及其制造方法”，中国发明专利申请0，2022年7月20日。
  12. 陆磊，孙博文，李吉业，王云萍，“透气导电材料、制造方法、半导体器件以及双栅TFT器件”，中国发明专利申请7，2022年6月1日。
  13. 王鹏飞，陆磊，王云萍，杨欢，周晓梁，张盛东，“一种异质结结构、半导体器件结构及其制造方法”，中国发明专利申请7，2022年4月19日。
  14. 刘发扬，陆磊，张盛东，王云萍，周晓梁，“双栅结构的半导体场效应晶体管及其制造方法”，中国发明专利申请202111286452.7，2021年11月2日。

 

论文 （合计86篇期刊论文，81篇会议论文）

一、一作/通讯SCI期刊论文41篇：(#共同一作，*通讯作者)

  1. Xiao Li, Zhikang Ma, Jinxiong Li, Wengao Pan, Congwei Liao, Shengdong Zhang, Zhuo Gao, Dong Fu,and Lei Lu*,”Heterojunction-engineered carrier transport in elevated-metal metal-oxide thin-film transistors”,JOURNAL OF SEMICONDUCTORS,Volume:45 Issue:10,pp:102301,2024,

DOI:10.1088/1674-4926/24040016

  1. Huan Yang, Tengyan Huang, Wengao Pan,Lei Lu*, Shengdong Zhang,”Output breakdown characteristics of amorphous InGaZnO thin-film transistors at high gate voltage,” Applied Physics Letters,Volume 124, Issue 9, pp:093501,2024,DOI:10.1063/5.0188427
  2. Zhu.JZ, Li.JX , Ju. SS, Lu. L,* Zhang. SD, Wang.XW,”Ultrathin In2O3 thin-film transistors deposited from trimethylindium and ozone”, Nanotechnology,Volume 35, Issue 43,pp:435205,2024,DOI:10.1088/1361-6528/ad6993
  3. Zhang, Z. Jiang, L. Lu,*M. Wong, and H.-S. Kwok, “Analysis of Degradation Mechanism in Poly-Si TFTs under Dynamic Gate Voltage Stress with Short Pulse Width Duration,” IEEE Electron Device Lett., vol. 45, no. 2, pp. 1–1, 2023, doi: 10.1109/led.2023.3345282.
  4. Huang, H. Liu, F. Tang, L. Lu,*M. Zhang, and Shengdong Zhang, * “Physical Insight Into Multiple Gate-Voltage Dependencies of Off-State Photocurrent in Amorphous InZnO Thin-Film Transistors,” IEEE Trans. Electron Devices, vol. PP, pp. 1–4, 2024, doi: 10.1109/TED.2024.3355022.
  5. Wengao Pan, Guoshang Zhang, Xinhua Liu, Kexing Song , Laiyuan Ning, Shuaifang Li, Lijia Chen, Xuefeng Zhang*, Tengyan Huang, Huan Yang, Xiaoliang Zhou, Shengdong Zhang, Lei Lu* , “Achieving high performance of ZnSnO thin-film transistor via homojunction  strategy, micromachines,” Micromachines, Volume 14 Issue 12, 2023, DOI: 10.3390/mi14122144.
  6. Yanxin Wang, Jiye Li, Fayang Liu, Dongxiang Luo, Yunping Wang, Shengdong Zhang, and Lei Lu*, “Fluorination-mitigated high-current degradation of amorphous InGaZnO thin-film transistors Fluorination-mitigated high-current degradation of amorphous InGaZnO thin-film transistors,” Semicond., vol. 44, no. 9, 2023, doi:10.1088/1674-4926/44/9/092601.
  7. Fayang Liu, Wengao Pan, Dawei Zheng, Zeyu Cai, Shengdong Zhang, Guijun Li, Man-Chun Tseng, Fion Sze Yan Yeung, and Lei Lu*, “Defect‐Hydrogen Interactions in Top‐Anode Oxide Semiconductor Schottky Barrier Diode,” Mater. Technol., vol. 2300182, pp. 1–8, Jun. 2023, doi: 10.1002/admt.202300182.
  8. Yuhan Zhang, Jiye Li, Yuqing Zhang, Huan Yang, Yuhang Guan, Mansun Chan, Lei Lu*, and Shengdong Zhang*, “Deep Sub-Micron Self-Aligned Bottom-Gate Amorphous InGaZnO Thin-Film Transistors With Low-Resistance Source / Drain,” IEEE Electron Device Lett., vol. 44, no. 8, p. 1300-1303, 2023, doi: 10.1109/LED.2023.3287865.
  9. 李吉业, 杨欢, 陆磊*, “高性能氧化物异质结薄膜晶体管的研究进展,” 中国科技部高技术研究发展中心——中国基础科学, vol. 25, pp. 55–59, 2023, DOI: 10.3969/j.issn.1009-2412.2023.01.007.
  10. Yuqing Zhang*, Jiye Li, Jinxiong Li, Tengyan Huang, Yuhang Guan, Yuhan Zhang, Huan Yang, Mansun Chan, Xinwei Wang*, Lei Lu*, and Shengdong Zhang*, “3‐Masks‐Processed Sub‐100 nm Amorphous InGaZnO Thin‐Film Transistors for Monolithic 3D Capacitor‐Less Dynamic Random Access Memories,” Electron. Mater., vol. 2300150, pp. 1–9, Jun. 2023, doi: 10.1002/aelm.202300150.
  11. Wengao Pan, Yunping Wang, Yanxin Wang, Zhihe Xia, Fion Sze Yan Yeung, Man Wong, Hoi Sing Kwok, Xinwei Wang, Shengdong Zhang, Lei Lu*, “Multiple effects of hydrogen on InGaZnO thin-film transistor and the hydrogenation-resistibility enhancement,” Alloys Compd., vol. 947, p. 169509, 2023, doi: 10.1016/j.jallcom.2023.169509.
  12. Jiye Li, Yuhang Guan, Jinxiong Li, Yuqing Zhang, Yuhan Zhang, ManSun Chan, Xinwei Wang, Lei Lu*,Shengdong Zhang*, “Ultra-thin gate insulator of atomic-layer-deposited AlO x and HfO x for amorphous InGaZnO thin-film transistors,” Nanotechnology, vol. 34, no. 26, p. 265202, Jun. 2023, doi: 10.1088/1361-6528/acc742.
  13. Jiye Li, Yuqing Zhang，Jialiang Wang,Huan Yang, Xiaoliang Zhou, Mansun Chan, Xinwei Wang*, Lei Lu*, and Shengdong Zhang*, “Near-Ideal Top-Gate Controllability of InGaZnO Thin-Film Transistors by Suppressing Interface Defects with an Ultrathin Atomic Layer Deposited Gate Insulator,” ACS Appl. Mater. Interfaces, vol. 15, no. 6, pp. 8666–8675, Feb. 2023, doi: 10.1021/acsami.2c20176.
  14. Yuqing Zhang, Jiye Li, Jinxiong Li, Tengyan Huang, Yuhang Guan, Yuhan Zhang, Huan Yang, Mansun Chan, Xinwei Wang*,Lei Lu*, Shengdong Zhang*, “Sub-100 nm Self-Aligned Top-Gate Amorphous InGaZnO Thin-Film Transistors With Gate Insulator of 4 nm Atomic-Layer-Deposited AlOx,” IEEE Electron Device Lett., pp. 1–1, 2023, doi: 1109/LED.2023.3237747.
  15. Huan Yang, Xiaoliang Zhou, Lei Lu*, and Shengdong Zhang*, “Investigation to the Carrier Transport Properties in Heterojunction-Channel Amorphous Oxides Thin-Film Transistors Using Dual-Gate Bias,” IEEE Electron Device Lett., vol. 44, no. 1, pp. 68–71, Jan. 2023, doi: 10.1109/LED.2022.3223080.
  16. JIYE LI,HAO PENG, HUAN YANG, XIAOLIANG ZHOU, LEI LU*, AND SHENGDONG ZHANG*, "Abnormal Bias Instabilities Induced by Lateral H2O Diffusion Into Top-Gate Insulator of a-InGaZnO Thin-Film Transistors," IEEE Journal of the Electron Devices Society, vol. 10, pp. 341-345, 2022, doi: 1109/JEDS.2022.3167963.
  17. Pengfei Wang, Huan Yang, Jiye Li, Xiaohui Zhang, Lei Wang, Juncheng Xiao, Bin Zhao, Shengdong Zhang*, and Lei Lu*, “Synergistically Enhanced Performance and Reliability of Abrupt Metal‐Oxide Heterojunction Transistor,” Electron. Mater., p. 2200807, Oct. 2022, doi: 10.1002/aelm.202200807.
  18. Dawei Zheng, Fayang Liu, Jitong Zhou, Guijun Li, Xianda Zhou, Shengdong Zhang, and Lei Lu*,“Suppression of nonideal leakage current in a-InGaZnO Schottky diode with edge termination structures,” Phys. Lett., vol. 121, no. 13, p. 132101, Sep. 2022, doi: 10.1063/5.0102231.
  19. Zhou, Jitong, Wengao Pan, Dawei Zheng, Fayang Liu, Guijun Li, Xianda Zhou, Kai Wang, Shengdong Zhang, and Lei Lu*. 2022. “Self-Stabilized Hydrogenation of Amorphous InGaZnO Schottky Diode with Bilayer Passivation.” Advanced Electronic Materials2200280:1–9. doi: 10.1002/aelm.202200280.
  20. Zhou Yuheng, Fayang Liu, Huan Yang, Xiaoliang Zhou, Guijun Li, Meng Zhang, Rongsheng Chen, Shengdong Zhang, and Lei Lu*. 2022. “Competition between Heating and Cooling during Dynamic Self-Heating Degradation of Amorphous InGaZnO Thin-Film Transistors.” Solid-State Electronics 195(February):108393. doi: 10.1016/j.sse.2022.108393.
  21. Jiye Li, Yuqing Zhang, Jialiang Wang, Huan Yang, Xiaoliang Zhou, Mansun Chan, Xinwei Wang, Lei Lu*, and Shengdong Zhang. 2022. “High-Performance Self-Aligned Top-Gate Amorphous InGaZnO TFTs With 4 Nm-Thick Atomic-Layer-Deposited AlOx Insulator.” IEEE Electron Device Lett.,43(5):729–32. doi: 10.1109/LED.2022.3160514.
  22. Zhou, Xiaoliang, Yunkai Cao, Jiye Li, Huan Yang, Wengao Pan, Lei Lu*, and Shengdong Zhang*. 2022. “Reactively-Sputtered AlOx Passivation Layer for Self-Aligned Top-Gate Amorphous InGaZnO Thin-Film Transistors.” Materials Science in Semiconductor Processing 148(March):106796. doi: 10.1016/j.mssp.2022.106796.
  23. Wang, Yunping, Yuheng Zhou, Zhihe Xia, Wei Zhou, Meng Zhang, Fion Sze Yan Yeung, Man Wong, Hoi Sing Kwok, Shengdong Zhang, and Lei Lu*. 2022. “Compact Integration of Hydrogen–Resistant a–InGaZnO and Poly–Si Thin–Film Transistors.” Micromachines13(6):839. doi: 10.3390/mi13060839.
  24. Wang, Pengfei, Yunfei Liu, Zhihe Xia, Yunping Wang, Xiaoliang Zhou, Runxiao Shi, Fion Sze Yan Yeung, Man Wong, Hoi Sing Kwok, Shengdong Zhang, and Lei Lu*. 2022. “Self-Compensation Effect of Photo-Bias Instabilities in a-InGaZnO Thin-Film Transistors Induced by Unique Ion Migration.” IEEE Transactions on Electron Devices69(6):3206–12. doi: 10.1109/ted.2022.3170851.
  25. Fayang Liu, Yuheng Zhou, Huan Yang, Xiaoliang Zhou, Xiaohui Zhang, Guijun Li, Meng Zhang, Shengdong Zhang, and Lei Lu*. 2021. “Roles of Hot Carriers in Dynamic Self-Heating Degradation of a-InGaZnO Thin-Film Transistors.” IEEE Electron Device Lett., vol. 43, no. 1, pp. 40–43, 2022.DOI: 10.1109/LED.2021.3133011
  26. Huan Yang, Tengyan Huang, Xiaoliang Zhou, Jiye Li, Sikai Su, Lei Lu*, and Shengdong Zhang. 2021. “Self-Heating Stress-Induced Severe Humps in Transfer Characteristics of Amorphous InGaZnO Thin-Film Transistors.” IEEE Trans. Electron Devices, vol. 68, no. 12, pp. 6197–6201. 2021.DOI: 10.1109/TED.2021.3122792
  27. Zhou, Y. Wang, X. Zhou, G. Li, Z. Xia, F. S. Y. Yeung, M. Wong, H. S. Kwok, S. Zhang, L. Lu*, “Reliable High-Performance Amorphous InGaZnO Schottky Barrier Diodes With Silicon Dioxide Passivation Layer,” IEEE Electron Device Lett., vol. 42, no. 9, pp. 3381–1341, 2021.DOI: 10.1109/LED.2021.3095921
  28. Lv#, L. Lu#, Z. Wang, H. Wang, D. Zhang, M. Wong, M. Wang, “Suppression of the Short-Channel Effect in Dehydrogenated Elevated-Metal Metal-Oxide (EMMO) Thin-Film Transistors,” IEEE Trans. Electron Devices, vol. 67, no. 7, pp. 3001–3004, Jul. 2020. DOI: 10.1109/TED.2020.2994491
  29. Zhou#,L. Lu#, Jin Wei, Yang Liu, K. Wang*, M. Wong, J. K. O. Sin, and H.-S. Kwok,, “Extracting the Critical Breakdown Electrical Field of Amorphous Indium-Gallium-Zinc-Oxide from the Avalanche Breakdown of n-Indium-Gallium-Zinc-Oxide/p+-Nickel-Oxide Heterojunction Diode,” IEEE Electron Device Lett., vol. 41, no. 7, pp. 1017–1020, 2020. DOI: 10.1109/LED.2020.2996242
  30. Peng, B. Chang, H. Fu, H. Yang, Y. Zhang, X. Zhou, L. Lu*, S. Zhang*, “Top-Gate Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors With Magnesium Metallized Source/Drain Regions,” IEEE Trans. Electron Devices, vol. 64, no. 7, pp. 1619–1624, 2020.DOI: 10.1109/TED.2020.2975211
  31. Zhou#, L. Lu#, K. Wang*, M. Wong, J. K. O. Sin, and H.-S. Kwok, “Low-Temperature-Processed Power Schottky Diode Based on Amorphous Indium-Tin-Zinc-Oxide/Indium-Gallium-Zinc-Oxide Bilayer,” IEEE Trans. Electron Devices, vol. 66, no. 11, pp. 4759–4763, Nov. 2019. DOI: 10.1109/TED.2019.2940720
  32. Lu#*, Z. Feng#, S. Wang, J. Li, Z. Xia, H. Kwok, and M. Wong, “Fluorination-Enabled Monolithic Integration of Enhancement- and Depletion-Mode Indium-Gallium-Zinc Oxide TFT,” IEEE Electron Device Lett., vol. 39, no. 5, pp. 692–695, 2018. DOI: 10.1109/LED.2018.2818949
  33. Lu#*, Z. Xia, J. Li, Z. Feng, S. Wang, H. Kwok, and M. Wong, “A Comparative Study on Fluorination and Oxidation of Indium-Gallium-Zinc Oxide Thin-Film Transistors,” IEEE Electron Device Lett., vol. 39, no. 2, pp. 196–199, 2018. DOI: 10.1109/LED.2017.2781700
  34. Lu#, J. Li, H. S. Kwok, and M. Wong*, “Elevated-Metal Metal-Oxide (EMMO) Thin-Film Transistor:Technology and Characteristics,” IEEE Electron Device Lett., vol. 37, no. 6, pp. 728–730, 2016. DOI: 10.1109/LED.2016.2552638
  35. Lu#, J. Li, and M. Wong*, “Thermally Induced Variation of the Turn-ON Voltage of an Indium-Gallium-Zinc Oxide Thin-Film Transistor,” IEEE Trans. Electron Devices, vol. 62, no. 11, pp. 3703–3708, 2015.DOI: 10.1109/TED.2015.2478839
  36. Lu#*and M. Wong*, “A Bottom-Gate Indium-Gallium-Zinc Oxide Thin-Film Transistor With an Inherent Etch-Stop and Annealing-Induced Source and Drain Regions,” IEEE Trans. Electron Devices, vol. 62, no. 2, pp. 574–579, 2015. DOI: 10.1109/TED.2014.2375194
  37. Lu#*, J. Li, and M. Wong, “A Comparative Study on the Effects of Annealing on the Characteristics of Zinc Oxide Thin-Film Transistors with Gate-Stacks of Different Gas-Permeability,” IEEE Electron Device Lett., vol. 35, no. 8, pp. 841–843, 2014. DOI: 10.1109/LED.2014.2326960
  38. Lu#*and M. Wong*, “The Resistivity of Zinc Oxide Under Different Annealing Configurations and Its Impact on the Leakage Characteristics of Zinc Oxide Thin-Film Transistors,” IEEE Trans. Electron Devices, vol. 61, no. 4, pp. 1077–1084, 2014. DOI: 10.1109/TED.2014.2302431
  39. Lu#, M. Wang*, and M. Wong, “A New Observation of the Elliot Curve Waveform in Charge Pumping of Poly-Si TFTs,” IEEE Electron Device Lett., vol. 32, no. 4, pp. 506–508, 2011. DOI:10.1109/LED.2010.2104311.
  40. Lu#, M. Wang*, and M. Wong, “Geometric Effect Elimination and Reliable Trap State Density Extraction in Charge Pumping of Polysilicon Thin-Film Transistors,” IEEE Electron Device Lett., vol. 30, no. 5, pp. 517–519, 2009. DOI: 10.1109/LED.2009.2017037

 

二、其它SCI期刊论文45篇：

  1. Guanming Zhu, Meng Zhang , Lei Lu,Man Wong , and Hoi-Sing Kwok，”Hot Carrier Degradation Reduction in MetalOxide Thin-Film Transistors by Implementing a Lightly Doped Drain-Like Structure”,IEEE ELECTRON DEVICE LETTERS,Volume45,Issue9,Page:1602-1605,2024.DOI:10.1109/LED.2024.342447
  2. Zhang, Mingjun,Huang, Jinyang,Wang, Zihan,Balasubramanian, Paramasivam, Yan, Yan,Zhou, Ye, Han, Su-Ting, Lu, Lei,Zhang, Meng*,”Performance Enhancement of Indium Zinc Oxide Thin-Film Transistors Through Process Optimizations”,IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY,Volume12,Page:868-874,2024,DOI:10.1109/JEDS.2024.3466956
  3. Jinxiong Li, Shanshan Ju, Yupu Tang, Jiye Li, Xiao Li, Xu Tian, Jianzhang Zhu, Qingqin Ge,Lei Lu, Shengdong Zhang, and Xinwei Wang*,”Remarkable Bias-Stress Stability of UltrathinAtomic-Layer-Deposited Indium Oxide Thin-Film Transistors Enabled by Plasma Fluorination”, ADVANCED FUNCTIONAL MATERIALS, Volume:34,Issue:28, pp:2401170, 2024, doi:10.1002/adfm.202401170
  4. Shi, X. Liu, L. Lu, M. Wong, and S. Member, “Bio-Potential Sensing System With Monolithically Integrated Electrode Array and Analog Front-Ends on a Flexible Substrate,” IEEE Trans. Electron Devices, Volume:71, Issue:3, pp. 1–6, 2024, doi: 10.1109/TED.2024.3357439.
  5. Guanming Zhu,Zhiying Chen, Meng Zhang, Lei Lu,Sunbin Deng, Man Wong,Hoi-Sing Kwok,”Reliability of indium-tin-zinc-oxide thin-film transistors under dynamic drain voltage stress”, APPLIED PHYSICS LETTERS, Volume:125 Issue:2, pp:023505,2024, DOI:10.1063/5.0213509.
  6. Jiaye Wu,* Marco Clementi, Chenxingyu Huang, Feng Ye, H. Y. FU, Lei Lu, Shengdong Zhang, Qian Li,* Camille-Sophie Brès,* “Thermo-optic epsilon-near-zero effects”, Nature Communication, Nature Communications, vol. 15, no. 1, p. 794, 2024, DOI: 10.1038/s41467-024-45054-z.
  7. Xueqing Lv, Tong Chen, Qiang Lou, Bosi Lin, Tian Sun, Guijun Li, Jiye Li, Hongwei Ji, Lei Lu, Hang Zhou*, Retina-inspired sensor array for visual adaptation with wide dynamic range of 162 dB, Phys. Lett.,vol. 123, p.251104, 2023, DOI: 10.1063/5.0179246.
  8. Huang et al., “Manufacturing-Enabled Tunability of Linear and Nonlinear Epsilon-Near-Zero Properties in Indium Tin Oxide Nanofilms,” ACS Appl. Mater. Interfaces, vol. 15, no. 29, pp. 35186–35195, 2023, doi: 10.1021/acsami.3c06270.
  9. Zheng et al., “Multifunctional and Multicolor Perovskite-CdSe Quantum Dots Diodes for Pulse Oximetry,” ACS Appl. Mater. Interfaces, vol. 15, no. 17, pp. 20753–20760, 2023, doi: 10.1021/acsami.3c01891.
  10. Zhi-Bo Sun, Zheng-Nan Yuan, Vigneshwaran Swaminathan, Valerii Vashchenko, Olena Vashchenko, Alex Yuk Lung Cheung,Lei Lu, Hoi-Sing Kwok, and Abhishek Kumar Srivastava*, “Reconfigurable Geometrical Phase Spatial Light Modulator Using Short‐Pitch Ferroelectric Liquid Crystals,” Opt. Mater., vol. 2300561, pp. 1–10, Aug. 2023, doi: 10.1002/adom.202300561.
  11. Yingming Zha, Su Pan, Yanfen Li, Zhibo Sun, Zhengnan Yuan, Yipeng Huo, Man-Chun Tseng, Lei Lu, Valerii Vashchenko, Abhishek Kumar Srivastava, Hoi-Sing Kwok, Xingwu Chen*, Xin Zhang, Shengdong Zhang*, Lixuan Chen*, “High contrast ratio and fast response ferroelectric liquid crystal displays based on alignment optimization,” Mater. (Amst)., vol. 143, no. July, p. 114257, 2023, doi: 10.1016/j.optmat.2023.114257.
  12. Chenxingyu Huang, Siwei Peng, Xuanyi Liu, Jiaye Wu, Hongyan Fu, Lei Lu, Shengdong Zhang, and Qian Li*, “Manufacturing-Enabled Tunability of Linear and Nonlinear Epsilon-Near-Zero Properties in Indium Tin Oxide Nanofilms,” ACS Appl. Mater. Interfaces, vol. 15, no. 29, 2023, doi: 10.1021/acsami.3c06270.
  13. Xindi Xu, Meng Zhang*, Yuyang Yang, Lei Lu, Feng Lin, Man Wong, and Hoi-Sing Kwok, “Realization of Visible‐Light Detection in InGaZnO Thin‐Film Transistor via Oxygen Vacancy Modulation through N2Treatments,” Electron. Mater., Jul. 2023, doi: 10.1002/aelm.202300351.
  14. Shi, X. Liu, T. Lei, Lei Lu, Z. Xia, and M. Wong*, “An Integrated Analog Front‐End System on Flexible Substrate for the Acquisition of Bio‐Potential Signals,” Adv. Sci., vol. 2207683, p. 2207683, Mar. 2023, doi: 10.1002/advs.202207683.
  15. Baoxing Liu, Junzi Li, Gui Wang, Fanghao Ye, Huibo Yan, Meng Zhang, Shou-Cheng Dong, Lei Lu, Pu Huang*, Tingchao He*, Ping Xu, Hoi-Sing Kwok, Guijun Li*, “Lattice strain modulation toward efficient blue perovskite light-emitting diodes,” Adv., vol. 8, no. 38, pp. 1–9, 2022, doi: 10.1126/sciadv.abq0138.
  16. Zhongming Luo, Baoxing Liu, Ting Zheng, Xi Luo, Lei Lu, Bingbing Tian, Ping Xu, Hoi Sing Kwok, and Guijun Li*, “High-Efficiency Sky-Blue Perovskite Light-Emitting Diodes via the Trade-Off between the Electron-Phonon Coupling Loss and Defect Passivation,” ACS Photonics, vol. 9, no. 7, pp. 2422–2430, 2022, doi: 10.1021/acsphotonics.2c00496.
  17. Huibo Yan, Jincheng Huang, Xiaohui Zhang, Ming Wang, Jun Liu, Chunfeng Meng, Sunbin Deng, Lei Lu, Ping Xu,* Hoi-Sing Kwok, and Guijun Li*, “A Buried Functional Layer for Inorganic CsPb0.75Sn0.25I2Br Perovskite Solar Cells,” RRL, vol. 6, no. 4, pp. 1–8, 2022, doi: 10.1002/solr.202100899.
  18. Jun Liu, Ming Wang, Jinhong Lin, Guojie Chen, Baoxing Liu, Jincheng Huang, Meng Zhang, Guangxing Liang, Lei Lu, Ping Xu, Bingbing Tian, Hoi-Sing Kwok,and Guijun Li *, “Mitigating deep-level defects through a self-healing process for highly efficient wide-bandgap inorganic CsPbI3−xBrx perovskite photovoltaics,” Mater. Chem.A, vol. 10, no. 33, pp. 17237–17245, 2022, doi: 10.1039/d2ta02022j.
  19. Xu, B. Liu, F. Zheng, J. Xiao, S. Zhang, and L. Lu, “A compensation pixel circuit with high bits using PWM method for AMLED,” Energy Reports, vol. 9, pp. 194–199, May 2023, doi: 10.1016/j.egyr.2022.12.136.
  20. Hongyuan Xu, Xu Wang, Daobing Hu, Feng Zheng, Juncheng Xiao, Lei Lu, Shengdong Zhang *, “Blue laser diode annealing-enhanced bottom-gate low-temperature Poly-Si thin-film transistors,” Sci. Semicond. Process., vol. 152, no. July, p. 107113, Dec. 2022, doi: 10.1016/j.mssp.2022.107113.
  21. Xianda Zhou , Lei Lu, Yang Liu, Kai Wang*, Yufeng Guo , Hanbin Ma , Jun Yu , Arokia Nathan , and Johnny K.O. Sin, “Potential of the Amorphous Oxide Semiconductors for Heterogeneous Power Integration Applications,” IEEE Trans. Electron Devices, pp. 1–5, 2022, doi: 10.1109/TED.2022.3225368.
  22. Pan, X. Zhou, Y. Li, W. Dong, L. Lu, and S. Zhang, “High performance of ZnSnO thin-film transistors engineered by oxygen defect modulation,” Mater. Sci. Semicond. Process., vol. 151, no. June, p. 106998, Nov. 2022, doi: 10.1016/j.mssp.2022.106998.
  23. Pan, X. Zhou, Q. Lin, J. Chen, L. Lu, and S. Zhang, “Low temperature and high-performance ZnSnO thin-film transistors engineered by in situ thermal manipulation,” J. Mater. Chem. C, vol. 10, no. 8, pp. 3129–3138, 2022, doi: 10.1039/d1tc05651d.
  24. Shi, S. Wang, Z. Xia, L. Lu, and M. Wong, “Fluorinated Metal-Oxide Thin-Film Transistors for Circuit Implementation on a Flexible Substrate,” IEEE J. Flex. Electron., vol. 1, no. 1, pp. 58–63, Jan. 2022, doi: 10.1109/JFLEX.2021.3140044.
  25. Yang, Yuyang, Meng Zhang, Lei Lu, Man Wong, and Hoi Sing Kwok. 2022. “Low-Frequency Noise in Bridged-Grain Polycrystalline Silicon Thin-Film Transistors.” IEEE Transactions on Electron Devices69(4):1984–88. doi: 10.1109/TED.2022.3148697.
  26. Chen, Yayi, Bin Li, Wei Zhong, Guijun Li, Lei Lu, Changjian Zhou, Linfeng Lan, and Rongsheng Chen. 2021. “InSnZnO Thin-Film Transistors with Nitrogenous Self-Assembled Multilayers Passivation.” IEEE Transactions on Electron Devices68 (11): 5612–17. DOI: 10.1109/TED.2021.3114267
  27. Yang, J. Li, X. Zhou, L. Lu, and S. Zhang*, “Self-Aligned Top-Gate Amorphous Zinc-Tin Oxide Thin-Film Transistor With Source/Drain Regions Doped by Al Reaction,” IEEE J. Electron Devices Soc., vol. 9, pp. 653–657, 2021.DOI: 10.1109/JEDS.2021.3094281
  28. Yin, Y. Chen, G. Li, W. Zhong, S. Deng, L. Lu, G. Li, H. S. Kwok, R. Chen*,  “Analysis of low frequency noise in in situ fluorine-doped ZnSnO thin-film transistors,” AIP Adv., vol. 11, no. 4, p. 045326, Apr. 2021.DOI:10.1063/5.0048125
  29. Yang, X. Zhou, H. Fu, B. Chang, Y. Min, H. Peng, L. Lu, S. Zhang*, “Metal Reaction-Induced Bulk-Doping Effect in Forming Conductive Source-Drain Regions of Self-Aligned Top-Gate Amorphous InGaZnO Thin-Film Transistors,” ACS Appl. Mater. Interfaces, vol. 13, no. 9, pp. 11442–11448, Mar. 2021. DOI:10.1021/acsami.0c21123
  30. Xu, W. Zhong, B. Li, S. Deng, H. Fan, Z. Wu, L. Lu, F. S. Y. Yeung, H. S. Kwok and R. Chen*, “An Integrator and Schmitt Trigger Based Voltage-to-Frequency Converter Using Unipolar Metal-Oxide Thin Film Transistors,” IEEE J. Electron Devices Soc., vol. 9, no. December 2020, pp. 144–150, 2021.DOI:10.1109/JEDS.2020.3045160
  31. Wei, Y. Yu, N. Lv, D. Zhang*, M. Wang*, L. Lu, M. Wong, “Enhanced Thermal Stability of Elevated-Metal Metal-Oxide Thin-Film Transistors via Low-Temperature Nitrogen Post-Annealing,” IEEE Trans. Electron Devices, vol. 68, no. 4, pp. 1649–1653, Apr. 2021.DOI:10.1109/TED.2021.3056635
  32. Zhou, Dingjian, Jincheng Huang, Huibo Yan, Jianfeng Zhang, Lei Lu, Ping Xu, and Guijun Li. 2020. “Luminescent, Wide-Band Gap Solar Cells with a Photovoltage up to 1.75 V through a Heterostructured Light-Absorbing Layer.” ACS Applied Materials & Interfaces12(45):50527–33. doi: 10.1021/ACSAMI.0C16032.
  33. Xia, X. Liu, R. Shi, J. Li, L. Lu, H. S. Kwok, and M. Wong*, “A Timing Model for the Optimal Design of a Prototype Active-Matrix Display,” IEEE Trans. Electron Devices, pp. 3167-3174, 2020.DOI:10.1109/TED.2020.3004784
  34. Wang, J. Li, R. Shi, Z. Xia, L. Lu, H. S. Kwok, M. Wong*, “Fluorinated Indium-Gallium-Zinc Oxide Thin-Film Transistor with Reduced Vulnerability to Hydrogen-Induced Degradation,” Journal of the Society for Information Display, vol. 28, no. 6, pp. 520–527, 2020. DOI:10.1002/jsid.914
  35. Wang, R. Shi, J. Li, L. Lu, Z. Xia, H. S. Kwok, M. Wong*, “Resilience of Fluorinated Indium-Gallium-Zinc Oxide Thin-Film Transistor against Hydrogen-Induced Degradation,” IEEE Electron Device Lett., vol. 41, no. 5, pp. 729–732, 2020. DOI:10.1109/LED.2020.2983789
  36. Xia, L. Lu, J. Li, H. Kwok, and M. Wong*, “A Bottom-Gate Metal-Oxide Thin-Film Transistor with Self-Aligned Source/Drain Regions,” IEEE Trans. Electron Devices, vol. 65, no. 7, pp. 2820–2826, 2018. DOI:10.1109/TED.2018.2833057
  37. Yang, D. Zhang*, M. Wang, L. Lu, M. Wong, “Suppressed Degradation of Elevated-Metal Metal-Oxide Thin-Film Transistors Under Bipolar Gate Pulse Stress,” IEEE Electron Device Lett., vol. 39, no. 5, pp. 707–710, 2018. DOI:10.1109/LED.2018.2821366
  38. Chan*, D. Lin, L. Lu, D. Zhang, S. Guo, Y. Zhang, K. Chau, M. Wong*, “Realization and Characterization of a Bulk-Type All-Silicon High Pressure Sensor,” J.Microelectromechanical Syst., vol. 27, no. 2, pp. 231–238, 2018. DOI:10.1109/JMEMS.2017.2786730 (国际顶级传感器期刊)
  39. Li, L. Lu, H. S. Kwok, and M. Wong*, “Three-Mask Elevated-Metal Metal-Oxide Thin-Film Transistor with Self-Aligned Definition of the Active Island,” IEEE Electron Device Lett., vol. 39, no. 1, pp. 35–38, 2018. DOI:10.1109/LED.2017.2775041
  40. Li*, L. Lu, H. S. Kwok, and M. Wong, “A Physical Model for Metal-Oxide Thin-Film Transistor Under Gate-Bias and Illumination Stress,” IEEE Trans. Electron Devices, vol. 65, no. 1, pp. 142–149, 2017. DOI:10.1109/TED.2017.2771800
  41. Xia, L. Lu, J. Li, Z. Feng, S. Deng, S. Wang, H. S. Kwok, and M. Wong*, “Characteristics of Elevated-Metal Metal-Oxide Thin-Film Transistors Based on Indium-Tin-Zinc Oxide,” IEEE Electron Device Lett., vol. 38, no. 7, pp. 894–897, 2017.DOI:10.1109/LED.2017.2707090
  42. Li*, L. Lu, Z. Feng, H. S. Kwok, and M. Wong*, “An oxidation-last annealing for enhancing the reliability of indium-gallium-zinc oxide thin-film transistors,” Appl. Phys. Lett., vol. 110, no. 14, pp. 142102–1–4, 2017. DOI:10.1063/1.4979649
  43. Ye, M. Wong, M.-T. Ng, K.-H. Chui, C.-K. Kong, L. Lu, T. Liu, and J. K. Luo, “High Precision Active-Matrix Self-Capacitive Touch Panel Based on Fluorinated ZnO Thin-Film Transistor,” J. Disp. Technol., vol.11, no. 1, pp. 22–29, 2015. DOI:10.1109/JDT.2014.2357845
  44. Ye, L. Lu, and M. Wong*, “Zinc-Oxide Thin-Film Transistor With Self-Aligned Source/Drain Regions Doped With Implanted Boron for Enhanced Thermal Stability,” IEEE Trans. Electron Devices, vol. 59, no. 2, pp. 393–399, 2012. DOI:10.1109/TED.2011.2175398
  45. Kwan*, S. Song, X. Lu, Lu, et al., “Improved Designs for An Electrothermal in-Plane Microactuator,” J. Microelectromechanical Syst., vol. 21, no. 3, pp. 586–595, 2012. DOI:10.1109/JMEMS.2012.2185820

 

三、一作/通讯国际会议论文41篇，其中邀请报告10篇：

  1. Jiye Li, Huan Yang, Xiao Li, Yuqing Zhang, Xinwei Wang, Lei Lu*, Shengdong Zhang,”Post-Annealing Optimization for Top-Gate Amorphous In-Ga-Zn-O Thin-Film Transistors with Atomic-Layer-Deposited Ultrathin AlOx Dielectric”, SID Symp. Dig.Tech.Pap.,vol. 54, no. S1, pp.1438-1440,2024,DOI:10.1002/sdtp.17820
  2. Jingyu Fan, Jianming Zhu, Xiao Li,Yunping Wang, Dan Yang, Zeyu Cai, Shengdong Zhang and Lei Lu*,”Effects of Sequential Anneals in Sealed and Oxidizing Ambiences on Oxide Thin-Film Transistors”,IDW’24, Sapporo,Japan, 2024
  3. Jilin Li, Bowen Sun, Huan Yang, Runxiao Shi, Fion Sze Yan Yeung, Man Hoi Wong,Hailong Jiao, Shengdong Zhang, Lei Lu*, “Mechanical Stress-Induced Recoverable and Unrecoverable Deteriorations of Flexible a-InGaZnO Thin-Film Transistor”,SID Symp. Dig.Tech.Pap., 54, no. S1, pp.158-160,2024,DOI:10.1002/sdtp.17025
  4. Li, Y. Zhang, H. Peng, H. Yang, Lei Lu,*and S. Zhang,* “Mechanism of H2O-induced Instability of Self-Aligned Top-Gate Amorphous InGaZnO TFTs,” SID Symp. Dig. Tech. Pap., vol. 54, no. S1, pp. 94–97, 2023, doi: 10.1002/sdtp.16230.
  5. Yang, Bo Wang, Wenting Dong, Zhikang Ma, Wengao Pan, Lei Lu,*and Shengdong Zhang,* “Energy-Band-Dependent Mobility in Heterojunction Amorphous Oxide Semiconductor Thin-Film Transistors,” SID Symp. Dig. Tech. Pap., vol. 54, no. S1, pp. 461–460, 2023, doi: 10.1002/sdtp.16332.
  6. Yuqing Zhang, Jiye Li, Yuhang Guan, Yuhan Zhang, Huan Yang, Mansun Chan,* Lei Lu,*Shengdong Zhang,* “P‐5: Improved Split C–V Technique for Effective Mobility Extraction in Self‐Aligned Top‐Gate Amorphous InGaZnO TFTs with Short Channel,” SID Symp. Dig. Tech. Pap., vol. 54, no. 1, pp. 1794–1797, Jun. 2023, doi: 10.1002/sdtp.16953.
  7. Jiye Li, Yuqing Zhang, Haishi Fu, Huan Yang, Yuhang Guan, Yuhan Zhang, Lei Lu,*Shengdong Zhang,* “40‐4: Invited Paper: Self‐Aligned Top‐Gate Amorphous In‐Ga‐Zn‐O Thin‐Film Transistors with Hafnium‐Induced Source/Drain Regions,” SID Symp. Dig. Tech. Pap., vol. 54, no. 1, pp. 580–582, Jun. 2023, doi: 10.1002/sdtp.16624. 
  8. Yunfei Liu, Shan Que, Congwei Liao, Jia Fu, Zhibang Song, Lei Lu,*and Shengdong Zhang,* “P‐9: LTPO TFTs Based PWM Pixel Circuit for AM‐Micro‐LED Display with Falling‐time <10μs,” SID Symp. Dig. Tech. Pap., vol. 54, no. 1, pp. 1810–1813, Jun. 2023, doi: 10.1002/sdtp.16957.
  9. Yuqing Zhang, Jiye Li, Jilin Li, Huan Yang, Mansun Chan, Xinwei Wang, Shengdong Zhang, and Lei Lu,*“Sub-Micron Oxide TFT for the Era of Oxide-Based Display,” IEEE International Flexible Electronics Technology Conference (IFETC), Aug. 2023, San Jose, CA, 01–03. doi: 10.1109/IFETC57334.2023.10254819.
  10. Jiye Li, Yuqing Zhang, Yuhan Zhang, Dongxiang Luo, Huan Yang, Xinwei Wang, Lei Lu*, and Shengdong Zhang, "Ultrafast Magnesium Reaction-Induced Source/Drain for Short-Channel Top-Gate Self-Aligned Oxide Thin-Film Transistors," The 30thInternational Display Workshops (IDW), Niigata, Japan, 2023.
  11. JChen Hua, Xiao Li, and Lei Lu*, " Laser Annealing-Boosted Mobility of Fluorinated InZnO Thin-Film Transistors," The International Meeting on Information Display (IMID), Busan, Korea, 2023.
  12. Jiye Li, Yuqing Zhang, Haishi Fu, Huan Yang, Yuhang Guan, Yuhan Zhan, Lei Lu*, Shengdong Zhang*, “Self-Aligned Top-Gate Amorphous In-Ga-Zn-O Thin-Film Transistors with Hafnium-Induced Source / Drain Regions,” SID Symp. Dig. Tech. Pap., pp. 580–582, 2023.
  13. Yunfei Liu, Shan Que, Congwei Liao, Jia Fu, Zhibang Song, Lei Lu*, and Shengdong Zhang*, “LTPO TFTs Based PWM Pixel Circuit for AM-Micro-LED Display with Falling-time <10μs,” SID Symp. Dig. Tech. Pap., pp. 1810–1813, 2023.
  14. Yuqing Zhang, Jiye Li, Yuhang Guan, Yuhan Zhang, Huan Yang, Mansun Chan*, Lei Lu*, Shengdong Zhang*, “P‐5: Improved Split C–V Technique for Effective Mobility Extraction in Self‐Aligned Top‐Gate Amorphous InGaZnO TFTs with Short Channel,” SID Symp. Dig. Tech. Pap., vol. 54, no. 1, pp. 1794–1797, Jun. 2023, doi: 10.1002/sdtp.16953.
  15. Hao Liu, Xiaoliang Zhou, Tengyan Huang, Jie Chen, Fanyou Tang, Lei Lu*, and Shengdong Zhang *, “Effect of wavelength on photoresponse characteristics of amorphous InZnO thin film transistors,” Tech. Pap. - SID Int. Symp., vol. 53, no. S1, pp. 596–599, 2022, doi: 10.1002/sdtp.16035.
  16. Jie Chen, Xiaoliang Zhou, Fanyou Tang, Tengyan Huang, Hao Liu, Lei Lu*, Shengdong Zhang*, “Exponential dependence of photocurrent on reciprocal of channel length in amorphous inzno thin-film transistors with short channel,” Tech. Pap. - SID Int. Symp., vol. 53, no. 1, pp. 1081–1084, 2022.
  17. Fayang Liu, Yuheng Zhou, Xiaoliang Zhou, Huan Yang, Zhihe Xia，Fion Sze Yan Yeung, Man Wong, Hoi Sing Kwok, Shengdong Zhang, Lei LU*, “P‐1.5: Dynamic Current Stress‐Induced Instabilities of a‐InGaZnO TFTs,” SID Symp. Dig. Tech. Pap., vol. 53, no. S1, pp. 584–587, Oct. 2022.
  18. Yunping Wang, Jitong Zhou, SiSi Wang, Xiaoliang Zhou, Bowen Sun, Man Wong, Hoi Sing Kwok, Shengdong Zhang, Lei Lu#, “Development of Hydrogen-Resistant IGZO TFT for LTPO Backplane”. International Conference on Display Technology (ICDT), 2021, Beijing, SID-09-21-1067.
  19. Fayang Liu, Yuheng Zhou, Xiaohui Zhang, Zhihe Xia, Fion Sze Yan Yeung, Man Wong, Hoi Sing Kwok, Shengdong Zhang, Lei Lu#, “Power-Dependent Degradation Behaviors of a-InGaZnO Thin Film Transistors under Dynamic Self-Heating Stress”,International Thin-Film Transistor Conference (ITC), 2021, Shanghai, P27.
  20. Pengfei Wang, Yunfei Liu, Yunping Wang, Rongsheng Chen, Zhihe Xia, Sunbin Deng, Man Wong, Hoi Sing Kwok, Shengdong Zhang, Lei Lu#, “Abnormal Negative Shift under Positive Bias Illumination Stress in Amorphous In- Ga-Zn-O Thin-Film Transistors”, International Conference on Solid State Devices and Materials (SSDM). Online, pp532-533.
  21. Bowen Sun, Runxiao Shi, Silin Lu, Ying Li, Tengteng Lei, Zhihe Xia, Man Wong, Shengdong Zhang, Hailong Jiao, Lei Lu#, “Design Flexible Logic and Memory Circuit Blocks Based on the Device Model of Elevated-Metal Metal-Oxide (EMMO) TFT”. International Conference on Computer-Aided Design for Thin Film Transistor Technologies (CAD-TFT 2021), Online, 3rd.
  22. Dawei Zheng, Lei Lu#, “Reliable High-Performance Amorphous In-Ga-Zn-O Schottky barrier Diodes with Passivation Layer”. Young Leaders in Displays and PG Workshop 2021, Online, Session 6.
  23. Fayang Liu,Lei Lu#, “Dynamic Self-Heating Stress-Induced Degradations of Self-Aligned Top Gate a-InGaZnO Thin-Film Transistors”. Young Leaders in Displays and PG Workshop 2021, Online, Session 6.
  24. Huan Yang, Sisi Wang, Zhihe Xia, Nannan Lv, Mingxiang Wang, Hoi Sing Kwok, Man Wong, Lu (邀请报告),Sheng Dong zhang, “Hydrogen-Resistant InGaZnO Thin-Film Transistors Towards Low-Temperature Polycrystalline Oxide Applications,” Int. Con. on Disp. Tech., Wuhan, Oct. 2020.
  25. Zhang, Z. Xia, J. Li, Y. Shao, S. Wang, L. Lu*(邀请报告), S. Zhang, H. S. Kwok, M. Wong, “Systematic Defect Manipulation in Metal Oxide Semiconductors towards High-Performance Thin-Film Transistors,” 4th Electron Devices Technology and Manufacturing Conference (EDTM), Penang, pp. 1–4, Mar. 2020.
  26. Peng, B. Chang, H. Fu, H. Yang, Y. Zhang, X. Zhou,L. Lu*, S. Zhang, “Self-Aligned Top-Gate Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistors with Source/Drain Regions Formed by Argon-Plasma Enhanced Aluminum Reaction Method,” Postgraduate Workshop on Display Research, Hsinchu, Aug. 2019. (最佳海报奖)
  27. Lu (邀请报告，Young Leaders), Z. Xia, J. Li, S. Zhang, H. S. Kwok, and M. Wong, “Elevated-Metal Metal-Oxide (EMMO) Thin-Film Transistor with Annealing-Induced Source/Drain Regions,” Int. Meet. Inf. Disp.-Young Leader Conference, Gyeongju,  Aug. 2019.
  28. Lu (邀请报告，及分会场主席),L. Nan, J. Li, et al., “Enhanced Elevated-Metal Metal-Oxide (EMMO) TFTs for Advanced Displays,” Int. Con. on Disp. Tech.,S15.3, Kunshan, Mar. 2019.
  29. Lu*(邀请报告，及分会场主席), M. Wong, “Metal-Oxide Circuits Based on Monolithic Integration of Enhancement- & Depletion-Mode TFTs,” Int. Conf. on Computer Aided Design for Thin-Film Transistor, Shenzhen, Nov. 2018.
  30. Lu, J. Li, Z. Xia, S. Wang, H. S. Kwok, and M. Wong, “8.1: Invited Paper: Enhanced Elevated-Metal Metal-Oxide Thin-Film Transistor Technology,” SID Symp. Dig. Tech. Pap., vol. 49, no. c, pp. 75–78, Apr. 2018.
  31. Lu, J. Li, N. Lv, Z. Xia, Z. Feng, S. Wang, M. Wong, and H. S. Kwok, “24.3: Short-Channel Indium-Gallium-Zinc Oxide Thin-Film Transistor Enabled by Thermal Dehydrogenation and Oxidizing Defect-Suppression,” SID Symp. Dig. Tech. Pap., vol. 49, no. L, pp. 255–258, 2018.
  32. Xia, J. Li, L. Lu*(邀请报告), et al., “A Study on Self-Aligned Bottom-Gate Elevated-Metal Metal-Oxide Thin-Film Transistors,” Int. Thin-Film Transistor Conf., Guangzhou, pp. 67, Feb. 2018.
  33. Xia, L. Lu*, J. Li, et al., “The Use of Fluorination to Enhance the Performance and the Reliability of Elevated-Metal Metal-Oxide Thin-Film Transistors,” SID Symp. Dig. Tech. Pap., Los Angeles, vol. 49, no. 1, pp. 1235–1238, May 2018.(国际顶级信息显示技术会议)
  34. Lu,J. Li, Z. Xia, et al., “Enhanced Scalability and Reliability of Indium-Gallium-Zinc Oxide Thin-Film Transistor Using a Combination of Plasma Fluorination and Thermal Oxidization,” Int. Disp. Workshops,Sendai, pp. 344–347, Dec. 2017.
  35. Lu, J. Li, Z. Xia, et al., “Short-Channel Elevated-Metal Metal-Oxide (EMMO) Thin-Film Transistor with Dehydrogenated Passivation Etch-Stop Layer,” Int. Disp. Manuf. Conf.,Taipei, pp. S16–04, Sep. 2017.
  36. Lu, J. Li, H. Kwok, and M. Wong, “High-Performance and Reliable Elevated-Metal Metal-Oxide Thin-Film Transistor for High-Resolution Displays,” 62nd IEEE Int. Electron Device Meet. (IEDM), San Francisco, pp. 802–805,Dec. 2016.(国际最顶级微电子学会议)
  37. Lu, J. Li, H. Kwok, and M. Wong, “Elevated Metal Metal-Oxide Thin-Film Transistor – A New Bottom-Gate Transistor Architecture for Flat-Panel Displays,” 13th IEEE Int. Conf. Solid-State Integr. Circuit Technol., Hangzhou, pp. S40–1–4, Oct. 2016.
  38. Lu, J. Li, H. S. Kwok, and M. Wong, “Elevated-Metal Metal-Oxide (EMMO) Thin-Film Transistor with Annealing-Induced Source/Drain Regions,” 16th Int. Meet. Inf. Disp., Jeju, pp. 42–47, Aug. 2016.
  39. Lu, Y. Jiang, J. Li, et al., “Annealing-Induced Depletion-Mode Indium-Gallium-Zinc Oxide Thin-Film Transistor and Its Application to Active-Matrix Organic Light-Emitting Diode Display,” Int. Disp. Manuf. Conf.,Taipei, pp. S15–4, Aug. 2015.
  40. Lu, M. Wang, and M. Wong, “Substrate current and its correlation with degradation of poly-Si thin film transistors,” IEEE Int. Symp. Phys. Fail. Anal. Integr. Circuits, Singapore, Jul. 2010.
  41. Lu, M. Wang, and M. Wong, “Optimization of charge pumping technique in polysilicon TFTs for geometric effect elimination and trap state density extraction,” 9thIEEE Int. Conf. Solid-State Integr. Technol., Beijing, pp. 978–981, Oct. 2008. (最佳学生论文奖)

 

四、其它国际会议论文40篇：

  1. Huan Yang, Zhikang Ma, Lei Luand Shengdong Zhang*”High-Performance Dual-Gate a-IGZO/a-IZO Thin-Film Transistors”SID Symp. Dig. Tech. Pap., vol. 53, no. 1,Page698-700, 2024, DOI:10.1002/sdtp.17179
  2. Huan Yang, Yong Le , Lei Luand Shengdong Zhang*,”High Performance of InSnO Thin-Film Transistors Enabled by Anodization Techniques”,SID Symp. Dig. Tech. Pap., vol. 53, no. 1,Page8-10, 2024, DOI:10.1002/sdtp.16982
  3. Zheng-Nan YUAN, Ying-Ming ZHAO, Su PAN, Yan-Fen LI, Zhi-Bo SUN, Yi-Peng HUO, Man-Chun TSENG, Lei LU, Valerii VASHCHENKO, Abhishek Kumar SRIVASTAVA, Xing-Wu CHEN, Xin ZHANG, Sheng-Dong ZHANG, Li-Xuan CHEN,Hoi-Sing KWOK,”Alignment Optimization on Gen. 4.5 G for High-framerate Ultra-highresolution Ferroelectric Liquid Crystal Displays”,SID Symp. Dig. Tech. Pap., vol. 53, no. 1,Pages 1758-1761, 2024, doi.:10.1002/sdtp.17913
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