柔性感知显示实验室 Flexible Sensing Display Lab
陆磊课题组

科研成果

专利 （已授权专利15项，专利申请16项）

一、已授权专利15项：美国专利3项，中国发明专利7项，中国实用新型5项

  1. 陆磊，张盛东,焦海龙,张敏,周航,周雨恒,王云萍，“一种应用于柔性薄膜晶体管阵列的结构”，中国发明专利ZL 2020 1 1592468.6，授权，2023年02月03日。
  2. 陆磊;张盛东;王鹏飞;王云萍;廖聪维;周晓梁,“显示面板的屏内传感器件结构及显示装置”，中国发明专利ZL 2020 1 1298874.1，授权，2023年02月07日。
  3. 陆磊，周玮，王文，郭海成，“Integration of Silicon Thin-Film Transistors and Metal-Oxide Thin-Film Transistors”，美国专利10,504,939 B2，授权，2017年2月20日。
  4. 陆磊，王文，郭海成，“METAL OXIDE THIN FILM TRANSISTOR WITH SOURCE AND DRAIN REGIONS DOPED AT ROOM TEMPERATURE”，美国专利9,960,281 B2，授权，2015年2月9日。
  5. 陆磊，王文，郭海成，“METAL OXIDE THIN FILM TRANSISTOR WITH CHANNEL , SOURCE AND DRAIN REGIONS RESPECTIVELY CAPPED WITH COVERS OF DIFFERENT GAS PERMEABILITY”，美国专利10,032,924，授权（2018-7-24），申请日2014年3月31日。
  6. 陆磊，王文，郭海成，“一种薄膜晶体管及制造方法和显示器面板”，中国发明专利9，授权，2016年10月28日。
  7. 陆磊，王文，郭海成，“一种电路结构及制作方法和显示器面板”，中国发明专利7，授权，2016年10月28日。
  8. 陆磊，王文，郭海成，“一种薄膜晶体管及制造方法和显示器面板”，中国发明专利1，授权，2016年10月28日。
  9. 陆磊，王文，郭海成，“一种显示器面板及制造方法”，中国发明专利8，授权，2016年10月28日。
  10. 陆磊，王文，郭海成，“一种薄膜晶体管及制造方法和显示器面板”，中国发明专利7，授权，2016年10月28日。
  11. 陆磊，王文，郭海成， “全面屏结构以及用于屏下摄像头的OLED显示面板”，中国实用新型专利202122197756，授权，2021年9月13日。
  12. 李佳鹏，陆磊，王文，郭海成， “一种薄膜晶体管和显示器面板”，中国实用新型专利ZL 2017 2 1522557.7，授权，2017年11月15日。
  13. 陆磊，王文，郭海成， “一种薄膜晶体管和显示器面板”，中国实用新型专利ZL 2016 2 1191798.3，授权，2016年10月28日。
  14. 陆磊，王文，郭海成，“一种薄膜晶体管和显示器面板”，中国实用新型专利ZL 2016 2 1190870.0，授权，2016年10月28日。
  15. 陆磊，王文，郭海成，“一种显示器面板”，中国实用新型专利ZL 2016 2 1188654.2，授权，2016年10月28日。

二、专利申请16项：美国专利申请3项，中国发明专利申请13项

  1. 郑大伟，陆磊，张盛东，王云萍，严建花，蔡泽宇，“一种肖特基二极管及其制造方法”，中国发明专利申请6，2022年7月20日。
  2. 郑大伟，陆磊，张盛东，王云萍，严建花，蔡泽宇，“一种肖特基二极管及其制造方法”，中国发明专利申请0，2022年7月20日。
  3. 陆磊，孙博文，李吉业，王云萍，“透气导电材料、制造方法、半导体器件以及双栅TFT器件”，中国发明专利申请7，2022年6月1日。
  4. 王鹏飞，陆磊，王云萍，杨欢，周晓梁，张盛东，“一种异质结结构、半导体器件结构及其制造方法”，中国发明专利申请7，2022年4月19日。
  5. 刘发扬，陆磊，张盛东，王云萍，周晓梁，“双栅结构的半导体场效应晶体管及其制造方法”，中国发明专利申请7，2021年11月2日。
  6. 陆磊，张盛东、张冠张、张立宁、李倩、王云萍、周雨恒，“一种自对准双栅薄膜晶体管结构”，中国发明专利申请6，2020年12月29日。
  7. 王思思，王文，李佳鹏，夏之荷，陆磊，郭海成，“METALLIZATION SCHEME FOR MONOLITHICALLY INTEGRATING METAL-OXIDE AND POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS”，美国专利申请63/102,358，2020年6月11日。
  8. 张盛东，张羽晴，陆磊，“一种顶栅肖特基氧化物薄膜晶体管及制备方法”，中国发明专利申请X，2019年9月30日。
  9. 陆磊，王文，郭海成，周贤达，王凯，“Metal-Oxide Schottky Diode and Fabrication Method Therefor”，美国专利申请62/920,919，2019年5月23日。
  10. 姜毅斌，董首成，陆磊，谭兆霆，邓青云，“Shadow Mask and Method of Fabricating The Same”，美国专利申请63/101,831，2019年5月15日。
  11. 陆磊，“液晶显示面板及其制作方法以及显示设备”，中国发明专利申请9，2019年5月10日。
  12. 陆磊，“显示面板及其制作方法以及显示设备”，中国发明专利申请7，2019年5月10日。

 

论文 （合计59篇期刊论文，63篇会议论文）

一、一作/通讯SCI期刊论文28篇：(#共同一作，*通讯作者)

  1. Jiye Li, Yuqing Zhang，Jialiang Wang,Huan Yang, Xiaoliang Zhou, Mansun Chan, Xinwei Wang*, Lei Lu*, and Shengdong Zhang*, “Near-Ideal Top-Gate Controllability of InGaZnO Thin-Film Transistors by Suppressing Interface Defects with an Ultrathin Atomic Layer Deposited Gate Insulator,” ACS Appl. Mater. Interfaces, vol. 15, no. 6, pp. 8666–8675, Feb. 2023, doi: 10.1021/acsami.2c20176.
  2. Yuqing Zhang, Jiye Li, Jinxiong Li, Tengyan Huang, Yuhang Guan, Yuhan Zhang, Huan Yang, Mansun Chan, Xinwei Wang*, Lei Lu*, Shengdong Zhang*, “Sub-100 nm Self-Aligned Top-Gate Amorphous InGaZnO Thin-Film Transistors With Gate Insulator of 4 nm Atomic-Layer-Deposited AlOx,” IEEE Electron Device Lett., pp. 1–1, 2023, doi: 1109/LED.2023.3237747.
  3. Huan Yang, Xiaoliang Zhou, Lei Lu*, and Shengdong Zhang*, “Investigation to the Carrier Transport Properties in Heterojunction-Channel Amorphous Oxides Thin-Film Transistors Using Dual-Gate Bias,” IEEE Electron Device Lett., vol. 44, no. 1, pp. 68–71, Jan. 2023, doi: 10.1109/LED.2022.3223080.
  4. JIYE LI, HAO PENG, HUAN YANG, XIAOLIANG ZHOU, LEI LU*, AND SHENGDONG ZHANG*, "Abnormal Bias Instabilities Induced by Lateral H2O Diffusion Into Top-Gate Insulator of a-InGaZnO Thin-Film Transistors," IEEE Journal of the Electron Devices Society, vol. 10, pp. 341-345, 2022, doi: 1109/JEDS.2022.3167963.
  5. Pengfei Wang, Huan Yang, Jiye Li, Xiaohui Zhang, Lei Wang, Juncheng Xiao, Bin Zhao, Shengdong Zhang*, and Lei Lu*, “Synergistically Enhanced Performance and Reliability of Abrupt Metal‐Oxide Heterojunction Transistor,” Electron. Mater., p. 2200807, Oct. 2022, doi: 10.1002/aelm.202200807.
  6. Dawei Zheng, Fayang Liu, Jitong Zhou, Guijun Li, Xianda Zhou, Shengdong Zhang, and Lei Lu*,“Suppression of nonideal leakage current in a-InGaZnO Schottky diode with edge termination structures,” Phys. Lett., vol. 121, no. 13, p. 132101, Sep. 2022, doi: 10.1063/5.0102231.
  7. Zhou, Jitong, Wengao Pan, Dawei Zheng, Fayang Liu, Guijun Li, Xianda Zhou, Kai Wang, Shengdong Zhang, and Lei Lu*. 2022. “Self-Stabilized Hydrogenation of Amorphous InGaZnO Schottky Diode with Bilayer Passivation.” Advanced Electronic Materials 2200280:1–9. doi: 10.1002/aelm.202200280.
  8. Zhou Yuheng, Fayang Liu, Huan Yang, Xiaoliang Zhou, Guijun Li, Meng Zhang, Rongsheng Chen, Shengdong Zhang, and Lei Lu*. 2022. “Competition between Heating and Cooling during Dynamic Self-Heating Degradation of Amorphous InGaZnO Thin-Film Transistors.” Solid-State Electronics 195(February):108393. doi: 10.1016/j.sse.2022.108393.
  9. Jiye Li, Yuqing Zhang, Jialiang Wang, Huan Yang, Xiaoliang Zhou, Mansun Chan, Xinwei Wang, Lei Lu*, and Shengdong Zhang. 2022. “High-Performance Self-Aligned Top-Gate Amorphous InGaZnO TFTs With 4 Nm-Thick Atomic-Layer-Deposited AlOx Insulator.” IEEE Electron Device Lett.,43(5):729–32. doi: 10.1109/LED.2022.3160514.
  10. Zhou, Xiaoliang, Yunkai Cao, Jiye Li, Huan Yang, Wengao Pan, Lei Lu*, and Shengdong Zhang*. 2022. “Reactively-Sputtered AlOx Passivation Layer for Self-Aligned Top-Gate Amorphous InGaZnO Thin-Film Transistors.” Materials Science in Semiconductor Processing 148(March):106796. doi: 10.1016/j.mssp.2022.106796.
  11. Wang, Yunping, Yuheng Zhou, Zhihe Xia, Wei Zhou, Meng Zhang, Fion Sze Yan Yeung, Man Wong, Hoi Sing Kwok, Shengdong Zhang, and Lei Lu*. 2022. “Compact Integration of Hydrogen–Resistant a–InGaZnO and Poly–Si Thin–Film Transistors.” Micromachines 13(6):839. doi: 10.3390/mi13060839.
  12. Wang, Pengfei, Yunfei Liu, Zhihe Xia, Yunping Wang, Xiaoliang Zhou, Runxiao Shi, Fion Sze Yan Yeung, Man Wong, Hoi Sing Kwok, Shengdong Zhang, and Lei Lu*. 2022. “Self-Compensation Effect of Photo-Bias Instabilities in a-InGaZnO Thin-Film Transistors Induced by Unique Ion Migration.” IEEE Transactions on Electron Devices 69(6):3206–12. doi: 10.1109/ted.2022.3170851.
  13. Fayang Liu, Yuheng Zhou, Huan Yang, Xiaoliang Zhou, Xiaohui Zhang, Guijun Li, Meng Zhang, Shengdong Zhang, and Lei Lu*. 2021. “Roles of Hot Carriers in Dynamic Self-Heating Degradation of a-InGaZnO Thin-Film Transistors.” IEEE Electron Device Lett., vol. 43, no. 1, pp. 40–43, 2022. DOI: 10.1109/LED.2021.3133011
  14. Huan Yang, Tengyan Huang, Xiaoliang Zhou, Jiye Li, Sikai Su, Lei Lu*, and Shengdong Zhang. 2021. “Self-Heating Stress-Induced Severe Humps in Transfer Characteristics of Amorphous InGaZnO Thin-Film Transistors.” IEEE Trans. Electron Devices, vol. 68, no. 12, pp. 6197–6201. 2021. DOI: 10.1109/TED.2021.3122792
  15. Zhou, Y. Wang, X. Zhou, G. Li, Z. Xia, F. S. Y. Yeung, M. Wong, H. S. Kwok, S. Zhang, L. Lu*, “Reliable High-Performance Amorphous InGaZnO Schottky Barrier Diodes With Silicon Dioxide Passivation Layer,” IEEE Electron Device Lett., vol. 42, no. 9, pp. 3381–1341, 2021. DOI: 10.1109/LED.2021.3095921
  16. Lv#, L. Lu#, Z. Wang, H. Wang, D. Zhang, M. Wong, M. Wang, “Suppression of the Short-Channel Effect in Dehydrogenated Elevated-Metal Metal-Oxide (EMMO) Thin-Film Transistors,” IEEE Trans. Electron Devices, vol. 67, no. 7, pp. 3001–3004, Jul. 2020. DOI: 10.1109/TED.2020.2994491
  17. Zhou#, L. Lu#, Jin Wei, Yang Liu, K. Wang*, M. Wong, J. K. O. Sin, and H.-S. Kwok,, “Extracting the Critical Breakdown Electrical Field of Amorphous Indium-Gallium-Zinc-Oxide from the Avalanche Breakdown of n-Indium-Gallium-Zinc-Oxide/p+-Nickel-Oxide Heterojunction Diode,” IEEE Electron Device Lett., vol. 41, no. 7, pp. 1017–1020, 2020. DOI: 10.1109/LED.2020.2996242
  18. Peng, B. Chang, H. Fu, H. Yang, Y. Zhang, X. Zhou, L. Lu*, S. Zhang*, “Top-Gate Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors With Magnesium Metallized Source/Drain Regions,” IEEE Trans. Electron Devices, vol. 64, no. 7, pp. 1619–1624, 2020. DOI: 10.1109/TED.2020.2975211
  19. Zhou#, L. Lu#, K. Wang*, M. Wong, J. K. O. Sin, and H.-S. Kwok, “Low-Temperature-Processed Power Schottky Diode Based on Amorphous Indium-Tin-Zinc-Oxide/Indium-Gallium-Zinc-Oxide Bilayer,” IEEE Trans. Electron Devices, vol. 66, no. 11, pp. 4759–4763, Nov. 2019. DOI: 10.1109/TED.2019.2940720
  20. Lu#*, Z. Feng#, S. Wang, J. Li, Z. Xia, H. Kwok, and M. Wong, “Fluorination-Enabled Monolithic Integration of Enhancement- and Depletion-Mode Indium-Gallium-Zinc Oxide TFT,” IEEE Electron Device Lett., vol. 39, no. 5, pp. 692–695, 2018. DOI: 10.1109/LED.2018.2818949
  21. Lu#*, Z. Xia, J. Li, Z. Feng, S. Wang, H. Kwok, and M. Wong, “A Comparative Study on Fluorination and Oxidation of Indium-Gallium-Zinc Oxide Thin-Film Transistors,” IEEE Electron Device Lett., vol. 39, no. 2, pp. 196–199, 2018. DOI: 10.1109/LED.2017.2781700
  22. Lu#, J. Li, H. S. Kwok, and M. Wong*, “Elevated-Metal Metal-Oxide (EMMO) Thin-Film Transistor: Technology and Characteristics,” IEEE Electron Device Lett., vol. 37, no. 6, pp. 728–730, 2016. DOI: 10.1109/LED.2016.2552638
  23. Lu#, J. Li, and M. Wong*, “Thermally Induced Variation of the Turn-ON Voltage of an Indium-Gallium-Zinc Oxide Thin-Film Transistor,” IEEE Trans. Electron Devices, vol. 62, no. 11, pp. 3703–3708, 2015. DOI: 10.1109/TED.2015.2478839
  24. Lu#* and M. Wong*, “A Bottom-Gate Indium-Gallium-Zinc Oxide Thin-Film Transistor With an Inherent Etch-Stop and Annealing-Induced Source and Drain Regions,” IEEE Trans. Electron Devices, vol. 62, no. 2, pp. 574–579, 2015. DOI: 10.1109/TED.2014.2375194
  25. Lu#*, J. Li, and M. Wong, “A Comparative Study on the Effects of Annealing on the Characteristics of Zinc Oxide Thin-Film Transistors with Gate-Stacks of Different Gas-Permeability,” IEEE Electron Device Lett., vol. 35, no. 8, pp. 841–843, 2014. DOI: 10.1109/LED.2014.2326960
  26. Lu#* and M. Wong*, “The Resistivity of Zinc Oxide Under Different Annealing Configurations and Its Impact on the Leakage Characteristics of Zinc Oxide Thin-Film Transistors,” IEEE Trans. Electron Devices, vol. 61, no. 4, pp. 1077–1084, 2014. DOI: 10.1109/TED.2014.2302431
  27. Lu#, M. Wang*, and M. Wong, “A New Observation of the Elliot Curve Waveform in Charge Pumping of Poly-Si TFTs,” IEEE Electron Device Lett., vol. 32, no. 4, pp. 506–508, 2011. DOI:10.1109/LED.2010.2104311.
  28. Lu#, M. Wang*, and M. Wong, “Geometric Effect Elimination and Reliable Trap State Density Extraction in Charge Pumping of Polysilicon Thin-Film Transistors,” IEEE Electron Device Lett., vol. 30, no. 5, pp. 517–519, 2009. DOI: 10.1109/LED.2009.2017037

二、其它SCI期刊论文31篇：

  1. Baoxing Liu, Junzi Li, Gui Wang, Fanghao Ye, Huibo Yan, Meng Zhang, Shou-Cheng Dong, Lei Lu, Pu Huang*, Tingchao He*, Ping Xu, Hoi-Sing Kwok, Guijun Li*, “Lattice strain modulation toward efficient blue perovskite light-emitting diodes,” Adv., vol. 8, no. 38, pp. 1–9, 2022, doi: 10.1126/sciadv.abq0138.
  2. Zhongming Luo, Baoxing Liu, Ting Zheng, Xi Luo, Lei Lu, Bingbing Tian, Ping Xu, Hoi Sing Kwok, and Guijun Li*, “High-Efficiency Sky-Blue Perovskite Light-Emitting Diodes via the Trade-Off between the Electron-Phonon Coupling Loss and Defect Passivation,” ACS Photonics, vol. 9, no. 7, pp. 2422–2430, 2022, doi: 10.1021/acsphotonics.2c00496.
  3. Huibo Yan, Jincheng Huang, Xiaohui Zhang, Ming Wang, Jun Liu, Chunfeng Meng, Sunbin Deng, Lei Lu, Ping Xu,* Hoi-Sing Kwok, and Guijun Li*, “A Buried Functional Layer for Inorganic CsPb0.75Sn0.25I2Br Perovskite Solar Cells,” RRL, vol. 6, no. 4, pp. 1–8, 2022, doi: 10.1002/solr.202100899.
  4. Jun Liu, Ming Wang, Jinhong Lin,Guojie Chen,Baoxing Liu, Jincheng Huang, Meng Zhang, Guangxing Liang, Lei Lu, Ping Xu, Bingbing Tian, Hoi-Sing Kwokd，and Guijun Li *, “Mitigating deep-level defects through a self-healing process for highly efficient wide-bandgap inorganic CsPbI3−xBrx perovskite photovoltaics,” Mater. Chem. A, vol. 10, no. 33, pp. 17237–17245, 2022, doi: 10.1039/d2ta02022j.
  5. Xu, B. Liu, F. Zheng, J. Xiao, S. Zhang, and L. Lu, “A compensation pixel circuit with high bits using PWM method for AMLED,” Energy Reports, vol. 9, pp. 194–199, May 2023, doi: 10.1016/j.egyr.2022.12.136.
  6. Hongyuan Xu, Xu Wang, Daobing Hu, Feng Zheng, Juncheng Xiao, Lei Lu , Shengdong Zhang *, “Blue laser diode annealing-enhanced bottom-gate low-temperature Poly-Si thin-film transistors,” Sci. Semicond. Process., vol. 152, no. July, p. 107113, Dec. 2022, doi: 10.1016/j.mssp.2022.107113.
  7. Xianda Zhou , Lei Lu, Yang Liu, Kai Wang*, Yufeng Guo , Hanbin Ma , Jun Yu , Arokia Nathan , and Johnny K.O. Sin, “Potential of the Amorphous Oxide Semiconductors for Heterogeneous Power Integration Applications,” IEEE Trans. Electron Devices, pp. 1–5, 2022, doi: 10.1109/TED.2022.3225368.
  8. Pan, X. Zhou, Y. Li, W. Dong, L. Lu, and S. Zhang, “High performance of ZnSnO thin-film transistors engineered by oxygen defect modulation,” Mater. Sci. Semicond. Process., vol. 151, no. June, p. 106998, Nov. 2022, doi: 10.1016/j.mssp.2022.106998.
  9. Pan, X. Zhou, Q. Lin, J. Chen, L. Lu, and S. Zhang, “Low temperature and high-performance ZnSnO thin-film transistors engineered by in situ thermal manipulation,” J. Mater. Chem. C, vol. 10, no. 8, pp. 3129–3138, 2022, doi: 10.1039/d1tc05651d.
  10. Shi, S. Wang, Z. Xia, L. Lu, and M. Wong, “Fluorinated Metal-Oxide Thin-Film Transistors for Circuit Implementation on a Flexible Substrate,” IEEE J. Flex. Electron., vol. 1, no. 1, pp. 58–63, Jan. 2022, doi: 10.1109/JFLEX.2021.3140044.
  11. Yang, Yuyang, Meng Zhang, Lei Lu, Man Wong, and Hoi Sing Kwok. 2022. “Low-Frequency Noise in Bridged-Grain Polycrystalline Silicon Thin-Film Transistors.” IEEE Transactions on Electron Devices 69(4):1984–88. doi: 10.1109/TED.2022.3148697.
  12. Chen, Yayi, Bin Li, Wei Zhong, Guijun Li, Lei Lu, Changjian Zhou, Linfeng Lan, and Rongsheng Chen. 2021. “InSnZnO Thin-Film Transistors with Nitrogenous Self-Assembled Multilayers Passivation.” IEEE Transactions on Electron Devices 68 (11): 5612–17. DOI: 10.1109/TED.2021.3114267
  13. Yang, J. Li, X. Zhou, L. Lu, and S. Zhang*, “Self-Aligned Top-Gate Amorphous Zinc-Tin Oxide Thin-Film Transistor With Source/Drain Regions Doped by Al Reaction,” IEEE J. Electron Devices Soc., vol. 9, pp. 653–657, 2021. DOI: 10.1109/JEDS.2021.3094281
  14. Yin, Y. Chen, G. Li, W. Zhong, S. Deng, L. Lu, G. Li, H. S. Kwok, R. Chen*, “Analysis of low frequency noise in in situ fluorine-doped ZnSnO thin-film transistors,” AIP Adv., vol. 11, no. 4, p. 045326, Apr. 2021. DOI:10.1063/5.0048125
  15. Yang, X. Zhou, H. Fu, B. Chang, Y. Min, H. Peng, L. Lu, S. Zhang*, “Metal Reaction-Induced Bulk-Doping Effect in Forming Conductive Source-Drain Regions of Self-Aligned Top-Gate Amorphous InGaZnO Thin-Film Transistors,” ACS Appl. Mater. Interfaces, vol. 13, no. 9, pp. 11442–11448, Mar. 2021. DOI:10.1021/acsami.0c21123
  16. Xu, W. Zhong, B. Li, S. Deng, H. Fan, Z. Wu, L. Lu, F. S. Y. Yeung, H. S. Kwok and R. Chen*, “An Integrator and Schmitt Trigger Based Voltage-to-Frequency Converter Using Unipolar Metal-Oxide Thin Film Transistors,” IEEE J. Electron Devices Soc., vol. 9, no. December 2020, pp. 144–150, 2021. DOI:10.1109/JEDS.2020.3045160
  17. Wei, Y. Yu, N. Lv, D. Zhang*, M. Wang*, L. Lu, M. Wong, “Enhanced Thermal Stability of Elevated-Metal Metal-Oxide Thin-Film Transistors via Low-Temperature Nitrogen Post-Annealing,” IEEE Trans. Electron Devices, vol. 68, no. 4, pp. 1649–1653, Apr. 2021. DOI:10.1109/TED.2021.3056635
  18. Zhou, Dingjian, Jincheng Huang, Huibo Yan, Jianfeng Zhang, Lei Lu, Ping Xu, and Guijun Li. 2020. “Luminescent, Wide-Band Gap Solar Cells with a Photovoltage up to 1.75 V through a Heterostructured Light-Absorbing Layer.” ACS Applied Materials & Interfaces 12(45):50527–33. doi: 10.1021/ACSAMI.0C16032.
  19. Xia, X. Liu, R. Shi, J. Li, L. Lu, H. S. Kwok, and M. Wong*, “A Timing Model for the Optimal Design of a Prototype Active-Matrix Display,” IEEE Trans. Electron Devices, pp. 3167-3174, 2020. DOI:10.1109/TED.2020.3004784
  20. Wang, J. Li, R. Shi, Z. Xia, L. Lu, H. S. Kwok, M. Wong*, “Fluorinated Indium-Gallium-Zinc Oxide Thin-Film Transistor with Reduced Vulnerability to Hydrogen-Induced Degradation,” Journal of the Society for Information Display, vol. 28, no. 6, pp. 520–527, 2020. DOI:10.1002/jsid.914
  21. Wang, R. Shi, J. Li, L. Lu, Z. Xia, H. S. Kwok, M. Wong*, “Resilience of Fluorinated Indium-Gallium-Zinc Oxide Thin-Film Transistor against Hydrogen-Induced Degradation,” IEEE Electron Device Lett., vol. 41, no. 5, pp. 729–732, 2020. DOI:10.1109/LED.2020.2983789
  22. Xia, L. Lu, J. Li, H. Kwok, and M. Wong*, “A Bottom-Gate Metal-Oxide Thin-Film Transistor with Self-Aligned Source/Drain Regions,” IEEE Trans. Electron Devices, vol. 65, no. 7, pp. 2820–2826, 2018. DOI:10.1109/TED.2018.2833057
  23. Yang, D. Zhang*, M. Wang, L. Lu, M. Wong, “Suppressed Degradation of Elevated-Metal Metal-Oxide Thin-Film Transistors Under Bipolar Gate Pulse Stress,” IEEE Electron Device Lett., vol. 39, no. 5, pp. 707–710, 2018. DOI:10.1109/LED.2018.2821366
  24. Chan*, D. Lin, L. Lu, D. Zhang, S. Guo, Y. Zhang, K. Chau, M. Wong*, “Realization and Characterization of a Bulk-Type All-Silicon High Pressure Sensor,” J. Microelectromechanical Syst., vol. 27, no. 2, pp. 231–238, 2018. DOI:10.1109/JMEMS.2017.2786730 (国际顶级传感器期刊)
  25. Li, L. Lu, H. S. Kwok, and M. Wong*, “Three-Mask Elevated-Metal Metal-Oxide Thin-Film Transistor with Self-Aligned Definition of the Active Island,” IEEE Electron Device Lett., vol. 39, no. 1, pp. 35–38, 2018. DOI:10.1109/LED.2017.2775041
  26. Li*, L. Lu, H. S. Kwok, and M. Wong, “A Physical Model for Metal-Oxide Thin-Film Transistor Under Gate-Bias and Illumination Stress,” IEEE Trans. Electron Devices, vol. 65, no. 1, pp. 142–149, 2017. DOI:10.1109/TED.2017.2771800
  27. Xia, L. Lu, J. Li, Z. Feng, S. Deng, S. Wang, H. S. Kwok, and M. Wong*, “Characteristics of Elevated-Metal Metal-Oxide Thin-Film Transistors Based on Indium-Tin-Zinc Oxide,” IEEE Electron Device Lett., vol. 38, no. 7, pp. 894–897, 2017. DOI:10.1109/LED.2017.2707090
  28. Li*, L. Lu, Z. Feng, H. S. Kwok, and M. Wong*, “An oxidation-last annealing for enhancing the reliability of indium-gallium-zinc oxide thin-film transistors,” Appl. Phys. Lett., vol. 110, no. 14, pp. 142102–1–4, 2017. DOI:10.1063/1.4979649
  29. Ye, M. Wong, M.-T. Ng, K.-H. Chui, C.-K. Kong, L. Lu, T. Liu, and J. K. Luo, “High Precision Active-Matrix Self-Capacitive Touch Panel Based on Fluorinated ZnO Thin-Film Transistor,” J. Disp. Technol., vol.11, no. 1, pp. 22–29, 2015. DOI:10.1109/JDT.2014.2357845
  30. Ye, L. Lu, and M. Wong*, “Zinc-Oxide Thin-Film Transistor With Self-Aligned Source/Drain Regions Doped With Implanted Boron for Enhanced Thermal Stability,” IEEE Trans. Electron Devices, vol. 59, no. 2, pp. 393–399, 2012. DOI:10.1109/TED.2011.2175398
  31. Kwan*, S. Song, X. Lu, Lu, et al., “Improved Designs for An Electrothermal in-Plane Microactuator,” J. Microelectromechanical Syst., vol. 21, no. 3, pp. 586–595, 2012. DOI:10.1109/JMEMS.2012.2185820

三、一作/通讯国际会议论文27篇，其中邀请报告6篇：

  1. Hao Liu, Xiaoliang Zhou, Tengyan Huang, Jie Chen, Fanyou Tang, Lei Lu*, and Shengdong Zhang *, “Effect of wavelength on photoresponse characteristics of amorphous InZnO thin film transistors,” Tech. Pap. - SID Int. Symp., vol. 53, no. S1, pp. 596–599, 2022, doi: 10.1002/sdtp.16035.
  2. Jie Chen, Xiaoliang Zhou, Fanyou Tang, Tengyan Huang, Hao Liu, Lei Lu*, Shengdong Zhang*, “Exponential dependence of photocurrent on reciprocal of channel length in amorphous inzno thin-film transistors with short channel,” Tech. Pap. - SID Int. Symp., vol. 53, no. 1, pp. 1081–1084, 2022, doi: 10.1002/sdtp.15687.
  3. Fayang Liu, Yuheng Zhou, Xiaoliang Zhou, Huan Yang, Zhihe Xia，Fion Sze Yan Yeung, Man Wong, Hoi Sing Kwok, Shengdong Zhang, Lei LU*, “P‐1.5: Dynamic Current Stress‐Induced Instabilities of a‐InGaZnO TFTs,” SID Symp. Dig. Tech. Pap., vol. 53, no. S1, pp. 584–587, Oct. 2022, doi: 10.1002/sdtp.16031.
  4. Yunping Wang, Jitong Zhou, SiSi Wang, Xiaoliang Zhou, Bowen Sun, Man Wong, Hoi Sing Kwok, Shengdong Zhang, Lei Lu#, “Development of Hydrogen-Resistant IGZO TFT for LTPO Backplane”. International Conference on Display Technology (ICDT), 2021, Beijing, SID-09-21-1067.
  5. Fayang Liu, Yuheng Zhou, Xiaohui Zhang, Zhihe Xia, Fion Sze Yan Yeung, Man Wong, Hoi Sing Kwok, Shengdong Zhang, Lei Lu#, “Power-Dependent Degradation Behaviors of a-InGaZnO Thin Film Transistors under Dynamic Self-Heating Stress”, International Thin-Film Transistor Conference (ITC), 2021, Shanghai, P27.
  6. Pengfei Wang, Yunfei Liu, Yunping Wang, Rongsheng Chen, Zhihe Xia, Sunbin Deng, Man Wong, Hoi Sing Kwok, Shengdong Zhang, Lei Lu#, “Abnormal Negative Shift under Positive Bias Illumination Stress in Amorphous In- Ga-Zn-O Thin-Film Transistors”, International Conference on Solid State Devices and Materials (SSDM). Online, pp532-533.
  7. Bowen Sun, Runxiao Shi, Silin Lu, Ying Li, Tengteng Lei, Zhihe Xia, Man Wong, Shengdong Zhang, Hailong Jiao, Lei Lu#, “Design Flexible Logic and Memory Circuit Blocks Based on the Device Model of Elevated-Metal Metal-Oxide (EMMO) TFT”. International Conference on Computer-Aided Design for Thin Film Transistor Technologies (CAD-TFT 2021), Online, 3rd.
  8. Dawei Zheng, Lei Lu#, “Reliable High-Performance Amorphous In-Ga-Zn-O Schottky barrier Diodes with Passivation Layer”. Young Leaders in Displays and PG Workshop 2021, Online, Session 6.
  9. Fayang Liu, Lei Lu#, “Dynamic Self-Heating Stress-Induced Degradations of Self-Aligned Top Gate a-InGaZnO Thin-Film Transistors”. Young Leaders in Displays and PG Workshop 2021, Online, Session 6.
  10. Huan Yang, Sisi Wang, Zhihe Xia, Nannan Lv, Mingxiang Wang, Hoi Sing Kwok, Man Wong, Lu (邀请报告), Sheng Dong zhang, “Hydrogen-Resistant InGaZnO Thin-Film Transistors Towards Low-Temperature Polycrystalline Oxide Applications,” Int. Con. on Disp. Tech., Wuhan, Oct. 2020.
  11. Zhang, Z. Xia, J. Li, Y. Shao, S. Wang, L. Lu* (邀请报告), S. Zhang, H. S. Kwok, M. Wong, “Systematic Defect Manipulation in Metal Oxide Semiconductors towards High-Performance Thin-Film Transistors,” 4th Electron Devices Technology and Manufacturing Conference (EDTM), Penang, pp. 1–4, Mar. 2020.
  12. Peng, B. Chang, H. Fu, H. Yang, Y. Zhang, X. Zhou, L. Lu*, S. Zhang, “Self-Aligned Top-Gate Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistors with Source/Drain Regions Formed by Argon-Plasma Enhanced Aluminum Reaction Method,” Postgraduate Workshop on Display Research, Hsinchu, Aug. 2019. (最佳海报奖)
  13. Lu (邀请报告，Young Leaders), Z. Xia, J. Li, S. Zhang, H. S. Kwok, and M. Wong, “Elevated-Metal Metal-Oxide (EMMO) Thin-Film Transistor with Annealing-Induced Source/Drain Regions,” Int. Meet. Inf. Disp.-Young Leader Conference, Gyeongju, Aug. 2019.
  14. Lu (邀请报告，及分会场主席),L. Nan, J. Li, et al., “Enhanced Elevated-Metal Metal-Oxide (EMMO) TFTs for Advanced Displays,” Int. Con. on Disp. Tech., S15.3, Kunshan, Mar. 2019.
  15. Lu* (邀请报告，及分会场主席), M. Wong, “Metal-Oxide Circuits Based on Monolithic Integration of Enhancement- & Depletion-Mode TFTs,” Int. Conf. on Computer Aided Design for Thin-Film Transistor, Shenzhen, Nov. 2018.
  16. Lu, J. Li, Z. Xia, S. Wang, H. S. Kwok, and M. Wong, “8.1: Invited Paper: Enhanced Elevated-Metal Metal-Oxide Thin-Film Transistor Technology,” SID Symp. Dig. Tech. Pap., vol. 49, no. c, pp. 75–78, Apr. 2018.
  17. Lu, J. Li, N. Lv, Z. Xia, Z. Feng, S. Wang, M. Wong, and H. S. Kwok, “24.3: Short-Channel Indium-Gallium-Zinc Oxide Thin-Film Transistor Enabled by Thermal Dehydrogenation and Oxidizing Defect-Suppression,” SID Symp. Dig. Tech. Pap., vol. 49, no. L, pp. 255–258, 2018.
  18. Xia, J. Li, L. Lu* (邀请报告), et al., “A Study on Self-Aligned Bottom-Gate Elevated-Metal Metal-Oxide Thin-Film Transistors,” Int. Thin-Film Transistor Conf., Guangzhou, pp. 67, Feb. 2018.
  19. Xia, L. Lu*, J. Li, et al., “The Use of Fluorination to Enhance the Performance and the Reliability of Elevated-Metal Metal-Oxide Thin-Film Transistors,” SID Symp. Dig. Tech. Pap., Los Angeles, vol. 49, no. 1, pp. 1235–1238, May 2018. (国际顶级信息显示技术会议)
  20. Lu,J. Li, Z. Xia, et al., “Enhanced Scalability and Reliability of Indium-Gallium-Zinc Oxide Thin-Film Transistor Using a Combination of Plasma Fluorination and Thermal Oxidization,” Int. Disp. Workshops, Sendai, pp. 344–347, Dec. 2017.
  21. Lu, J. Li, Z. Xia, et al., “Short-Channel Elevated-Metal Metal-Oxide (EMMO) Thin-Film Transistor with Dehydrogenated Passivation Etch-Stop Layer,” Int. Disp. Manuf. Conf., Taipei, pp. S16–04, Sep. 2017.
  22. Lu, J. Li, H. Kwok, and M. Wong, “High-Performance and Reliable Elevated-Metal Metal-Oxide Thin-Film Transistor for High-Resolution Displays,” 62nd IEEE Int. Electron Device Meet. (IEDM), San Francisco, pp. 802–805,Dec. 2016. (国际最顶级微电子学会议)
  23. Lu, J. Li, H. Kwok, and M. Wong, “Elevated Metal Metal-Oxide Thin-Film Transistor – A New Bottom-Gate Transistor Architecture for Flat-Panel Displays,” 13th IEEE Int. Conf. Solid-State Integr. Circuit Technol., Hangzhou, pp. S40–1–4, Oct. 2016.
  24. Lu, J. Li, H. S. Kwok, and M. Wong, “Elevated-Metal Metal-Oxide (EMMO) Thin-Film Transistor with Annealing-Induced Source/Drain Regions,” 16th Int. Meet. Inf. Disp., Jeju, pp. 42–47, Aug. 2016.
  25. Lu, Y. Jiang, J. Li, et al., “Annealing-Induced Depletion-Mode Indium-Gallium-Zinc Oxide Thin-Film Transistor and Its Application to Active-Matrix Organic Light-Emitting Diode Display,” Int. Disp. Manuf. Conf., Taipei, pp. S15–4, Aug. 2015.
  26. Lu, M. Wang, and M. Wong, “Substrate current and its correlation with degradation of poly-Si thin film transistors,” IEEE Int. Symp. Phys. Fail. Anal. Integr. Circuits, Singapore, Jul. 2010.
  27. Lu, M. Wang, and M. Wong, “Optimization of charge pumping technique in polysilicon TFTs for geometric effect elimination and trap state density extraction,” 9th IEEE Int. Conf. Solid-State Integr. Technol., Beijing, pp. 978–981, Oct. 2008. (最佳学生论文奖)

四、其它国际会议论文35篇：

  1. Zhibo SUN, Sisi WANG, Zhengnan YUAN, Zhihe XIA, Lei LU, Man WONG, Hoi-Sing KWOK, Abhishek Kumar SRIVASTAVA, “Active-matrix Addressed High Brightness and Ultra-high PPI Field-Sequential-Color Display based on Deformed Helix Ferroelectric Liquid Crystal for VR/AR,” Tech. Pap. - SID Int. Symp., vol. 53, no. S1, pp. 43–46, 2022, doi: 10.1002/sdtp.15832.
  2. Sisi Wang, Zhibo Sun, Zhihe Xia, Zhengnan Yuan, Lei Lu, Abhishek Kumar Srivastava, Hoi Sing Kwok, and Man Wong, “P‐21: Student Poster: Indium‐Gallium‐Zinc Oxide Thin‐Film Transistors for High‐Resolution Active‐Matrix Ferroelectric Liquid‐Crystal Displays,” SID Symp. Dig. Tech. Pap., vol. 53, no. 1, pp. 1114–1117, Jun. 2022, doi: 10.1002/sdtp.15696.
  3. Yang, J. Li, X. Zhou, L. Lu, and S. Zhang, “37.3: Self‐Aligned Top‐Gate Amorphous ZnSnO Thin‐Film Transistor with Thermal‐Stable Al Reaction‐Doped Source/Drain,” SID Symp. Dig. Tech. Pap., vol. 53, no. S1, pp. 400–402, Oct. 2022, doi: 10.1002/sdtp.15961.
  4. Sisi Wang, Zhihe Xia, Zhibo Sun, Zhengnan Yuan, Lei Lu, Abhishek Kumar Srivastava, Hoi Sing Kwok, and Man Wong, “43.3: Metal‐Oxide Thin‐Film Transistors for Driving High‐Resolution Active‐Matrix Ferroelectric Liquid‐Crystal Displays,” SID Symp. Dig. Tech. Pap., vol. 53, no. S1, pp. 442–442, Oct. 2022, doi: 10.1002/sdtp.15979.
  5. Lu, Silin, Lei Lu, Shengdong Zhang, and Hailong Jiao. 2021. “A Pull-up Adaptive Sense Amplifier Based on Dual-Gate IGZO TFTs.” Proceedings - IEEE International Symposium on Circuits and Systems 2021-May:0–4. doi: 10.1109/ISCAS51556.2021.09401743.
  6. Chen, Siting, Meng Zhang, Zhiying Chen, Yuhuang Zeng, Lei Lu, Yan Yan, Man Wong, Juin Jei Liou, and Hoi Sing Kwok. 2021. “Light-Illumination-Induced Degradation in Elevated-Metal Metal-Oxide Thin-Film Transistors without and with Fluorination.” 2021 9th International Symposium on Next Generation Electronics, ISNE 2021 3–6. doi: 10.1109/ISNE48910.2021.9493588.
  7. Wang, L. Lu, N. Lv, and M. Wong, “P‐18: Student Poster: Non‐Oxidizing Pre‐Annealing for Enhanced Fluorination of an Indium‐Gallium‐Zinc Oxide Thin‐Film Transistor,” SID Symp. Dig. Tech. Pap., vol. 52, no. 1, pp. 1120–1123, May 2021.
  8. Xia, R. Shi, L. Lu, H. Kwok, and M. Wong, “P‐11: Self‐Heating Induced Degradation in a Metal‐Oxide Thin‐Film Transistor on a Flexible Substrate and Its Mitigation,” SID Symp. Dig. Tech. Pap., vol. 52, no. 1, pp. 1092–1095, May 2021.
  9. Shi, S. Wang, Y. Wang, Z. Zhou, Z. Xia, L. Lu, M. Wong, “P‐19: Student Poster: Enhanced Elevated‐Metal Metal‐Oxide Thin‐Film Transistors for Gate‐Driver Circuit Fabricated on a Flexible Substrate,” SID Symp. Dig. Tech. Pap., vol. 52, no. 1, pp. 1124–1127, May 2021.
  10. Zhou, K. Wang, Y. Liu, L. Lu, and J. K. O. Sin, “Low-Temperature Fabricated Amorphous Oxide Semiconductor Heterojunction Diode for Monolithic 3D Power Integration Applications,” 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD), May 2021, pp. 283–286.
  11. Chen, M. Zhang*, Z. Chen, Y. Zeng, L. Lu, Y. Yan, M. Wong, J. J. Liu, H. S. Kwok, “Light-Illumination-Induced Degradation in Elevated-Metal Metal-Oxide Thin-Film Transistors without and with Fluorination,” 9th International Symposium on Next Generation Electronics (ISNE), Jul. 2021, pp. 1–4.
  12. Lu, L. Lu, S. Zhang, and H. Jiao, “A Pull-Up Adaptive Sense Amplifier Based on Dual-Gate IGZO TFTs,” IEEE International Symposium on Circuits and Systems (ISCAS), May 2021, pp. 1–5.
  13. Zhang, H. Peng, H. Yang, Y. Cao, L. Qin, H. Fu, L. Lu, S. Zhang “Performances of Self-Aligned Top-Gate a-IGZO TFTs with Ultrathin PECVD SiO2Gate Dielectric,” 4th Electron Devices Technol. Manuf. Conf. (EDTM), pp. 8–11, 2020.
  14. Zhou, Y. Shao, H. Yang, Q. Lin, L. Lu, Y. Wang, S. Zhang, “Fully Self-Aligned Homojunction Bottom-Gate Amorphous InGaZnO TFTs with Al Reacted Source/Drain Regions,” IEEE 15th Int. Conf. Solid-State Integr. Circuit Technol. (ICSICT), no. d, pp. 11–13, 2020.
  15. Xia, X. Liu, Y. Wang, J. Li, R. Chen, Lei Lu, H. S. Kwok, and M. Wong, “P‐4: Enhanced Scalability and Reliability of High Mobility Elevated‐Metal Metal‐Oxide Thin‐Film Transistors with Bandgap Engineering,” SID Symp. Dig. Tech. Pap., vol. 51, no. 1, pp. 1322–1325, Aug. 2020.
  16. Xia, L. Lu, J. Li, H. Kwok, and M. Wong, “Self-Aligned Elevated-Metal Metal-Oxide Thin-Film Transistors for Displays and Flexible Electronics,” 65th IEEE Int. Electron Device Meet. (IEDM), San Francisco, pp. 170–173,Dec. 2019. (国际最顶级微电子学会议)
  17. Lin, E. Chan, Z. Tang, L. Lu, M. Wong, and K. Chau, “A 2000-Atmosphere Bulk-Type Pressure Sensor Realized on (001) Substrate with Selective Stress-Filtering Trenches,” in 2019 IEEE 32nd International Conference on Micro Electro Mechanical Systems (MEMS), 2019, no. January, pp. 739–742.
  18. Wang, L. Lu, J. Li, et al., “Carrier concentration reduction by fluorine doping in p-type SnO thin film,” SID Symp. Dig. Tech. Pap., vol. 50, no. 1, pp. 1251–1254, Jun. 2019. (最佳论文奖)
  19. Xia, X. Lu, L. Lu, J. Li, H. S. Kwok, and M. Wong, “1.3: A Timing Model for the Design of an Active‐Matrix Display,” SID Symp. Dig. Tech. Pap., vol. 50, no. S1, pp. 13–16, Sep. 2019.
  20. Wong, Z. Xia, L. Lu, J. Li, and H. S. Kwok, “8.2: Invited Paper: Elevated‐Metal Metal‐Oxide Thin‐Film Transistor with Self‐Aligned Source/Drain Regions,” SID Symp. Dig. Tech. Pap., vol. 50, no. S1, pp. 75–78, Sep. 2019.
  21. Chan, D. Lin, L. Lu, et al., “Trench-Isolated Bulk-Type Pressure Sensor on Silicon-on-Insulator for High-Temperature and High-Pressure Downhole Applications,” Hilton Head Workshop: A Solid-State Sensors, Actuators and Microsystems Workshop, Hilton Head Island (Carolina), pp. 198–201, Jun. 2018. (国际顶级传感器会议)
  22. Li, L. Lu, Z. Xia, et al., “Three-Mask Elevated-Metal Metal-Oxide Thin-Film Transistor Technology for High-Resolution AMOLED Application,” SID Symp. Dig. Tech. Pap., Los Angeles, vol. 49, no. 1, pp. 1256–1259, May 2018.
  23. Bebiche, S. Wang, L. Lu, et al., “Reliable Flexible EMMO IGZO TFTs Dedicated to Flexible Display Applications,” SID Symp. Dig. Tech. Pap., Los Angeles, vol. 49, no. 1, pp. 1587–1589, May 2018.
  24. Li, L. Lu, Z. Xia, S. Wang, H.-S. Kwok, and M. Wong, “P-1.5: Edge Effects of Three-Mask Elevated-Metal Metal-Oxide Thin-Film Transistor and Their Elimination,” SID Symp. Dig. Tech. Pap., vol. 49, no. Mask 1, pp. 531–534, Apr. 2018.
  25. Wang, L. Lu, J. Li, Z. Xia, H. S. Kwok, and M. Wong, “P-1.4: Elevated-Metal Metal-Oxide Thin-Film Transistor with Fluorinated Indium-Gallium-Zinc Oxide Channel towards Flexible Applications,” SID Symp. Dig. Tech. Pap., vol. 49, pp. 528–530, Apr. 2018.
  26. Xia, L. Lu, J. Li, et al., “Elevated-Metal Metal-Oxide Thin-Film Transistors Based on Indium-Tin-Zinc Oxide,” Int. Disp. Manuf. Conf., Taipei, pp. S16–03, Sep. 2017.
  27. Wang, Z. Feng, S. Bebiche, L. Lu, et al., “Elevated-Metal Metal-Oxide (EMMO) Thin-Film Transistor with Fluorinated Indium-Gallium-Zinc Oxide Channel,” Int. Disp. Manuf. Conf., Taipei, pp. C–01, Sep. 2017.
  28. Feng, L. Lu, W. Zhou, et al., “Differential Amplifier Based on IGZO Elevated-Metal Metal-Oxide (EMMO) Thin-Film Transistors, Simulation and Fabrication,” Int. Disp. Manuf. Conf., Taipei, pp. C–05, Sep. 2017.
  29. Li, L. Lu, H. Kwok, and M. Wong, “On the Reliability of an InGaZnO Thin-Film Transistor under Negative Bias Illumination Stress,” 17th Int. Meet. on Infor. Disp., Busan, pp. 163–168, Aug. 2017.
  30. Lin, E. Chan, L. Lu, et al., “A 1200-Atmosphere Bulk-Type All-Silicon Pressure Sensor,” The 19th Int. Conf. on Solid-State Sensors, Actuators and Microsystems, Transducers, Kaohsiung, pp. 2119–2122, Jun. 2017.
  31. Zeng, L. Lu, Y. Zhang, S. Guo, M. Wong, and K. Chau, “MEMS Pressure Sensors for High-Temperature High- Pressure Downhole Applications,” IEEE Int. Conf. Electron Devices Solid-State Circuits, Hong Kong, pp. 43–47, Aug. 2016.
  32. Feng, L. Lu, M. Wong, and H. Kwok, “Turn-ON Voltage Modulation of Indium-Gallium-Zinc-Oxide Thin-Film Transistors through Thermal Annealing Processes,” SID Symp. Dig. Tech. Pap., San Francisco, vol. 47, no. 1, pp. 1197–1199, May 2016.
  33. Li, L. Lu and M. Wong, “Analysis of VON Shift Phenomenon on Indium-Gallium-Zinc Oxide Thin-Film Transistors with Thermal-Induced Source/Drain Regions,” Int. Disp. Manuf. Conf., Taipei, pp. CP3–011, Aug. 2015.
  34. M. H. Kwan, S. Song, X. Lu, L. Lu, et al., “Designs for improving the performance of an electro-thermal in-plane actuator,” IEEE/IFIP 19th Int. Conf. VLSI Syst. VLSI-SoC 2011, Hong Kong, pp. 220–225, Oct. 2011.
  35. Lu, M. Wang, K. Sun, and L. Lu, “Evaluation of self-heating and hot carrier degradation of poly-Si thin-film transistors using charge pumping technique,” IEEE Int. Reliab. Phys. Symp., Anaheim, pp. 1040–1043, May 2010.
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