Home > 新闻动态 > 恭喜张艺明同学的论文在一区期刊Carbon上发表

近期,本课题组张敏老师和张艺明同学分别以通讯作者和第一作者在Carbon上发表了题为“Ultra-flexible high-k transparent integratable fully-carbon-based capacitor arrays for sharp-switching transistors”的研究成果。

本文基于光刻辅助抽滤方法,使用氧化石墨烯和碳纳米管等材料构建了全碳柔性电容和晶体管阵列。最终实现了柔性高介电常数的电容阵列,其弯曲半径可低至250μm,在1mm弯曲半径下可承受至少一万次弯折。在此基础上,本工作实现了柔性全碳晶体管阵列,实现了88mV/dec的超低亚阈值特性。该成果发表在了碳材料方向重要国际期刊Carbon。

Investigating dielectric layer is one of the keys in realizing flexible transistors, which propose higher requirements and more challenges on electrical performance, mechanical flexibility, and integrability of the dielectric. The previously reported researches mainly focused on inorganic rigid dielectrics or organic intrinsically-flexible dielectrics could not meet the requirements effectively and efficiently. In this work, we propose a sandwich-like carbon nanotubes/graphene oxide/carbon nanotubes design, which is applicable to both passive and active devices. Adopting this design, we realize integratable fully-carbon-based ultra-flexible and transparent capacitor arrays (FC-UFT-CAs) for both metal-insulator-metal (MIM) and metal-insulator-semiconductor (MIS) types. The MIM FC-UFT-CA exhibits competitive dielectric performance with high permittivity of 8.5 and high capacitance density of 250 nF cm-2. Significantly, the capacitance shows almost no degradation even after the bending radius is reduced to as small as 250 μm. And it keeps showing excellent electrical and mechanical properties after 10000 bending cycles under a radius of 1 mm. Based on the MIS FC-UFT-CA, fully-carbon-based transistors are realized, which show sharp-switching characteristic with an ultra-small subthreshold swing of 88 mV dec-1. Overall, the proposed design and the fully-carbon-based devices provide a novel solution and show a great potential for further advancing flexible electronics.