恭喜刘德行同学的论文在一区期刊Materials Horizons上发表

近期，本课题组张敏老师和刘德行同学分别以通讯作者和第一作者在材料领域国际知名期刊Materials Horizons（IF：13.3）发表了题目为“Hydrogen-bonding enables two-dimensional metal/semiconductor tunable contacts approaching the quantum limit and the modified Schottky-Mott limit simultaneously”的研究论文。该工作提出与阐明了氢键接触技术在开发新型低维器件和探索性能极限中的潜力，凸显了化学、物理和材料科学之间交叉研究对电子学发展的重要机遇。

超越硅材料的先进电子学发展需要将沟道材料厚度缩减至二维（2D）极限。然而，利用2D半导体制造器件的一个关键挑战是需要接近量子极限的低接触电阻，这主要受限于固有的范德华间隙导致的附加隧穿电阻。最近，半金属（铋、锑等）/二硫化钼接触的强范德华接触接近量子极限，为进一步缩小器件尺寸和延续摩尔定律提供了希望，引发了一波探索2D晶体管性能极限的研究热潮。然而，继续降低接触电阻仍然具有挑战性，因为半金属接触受限于范德华相互作用的本质及狭窄的功函数范围。此外，实现清洁无损的金属沉积工艺仍具有一定技术挑战。因此，急需实现能本质上克服范德华间隙的超洁净、无损的金半接触。

Achieving efficient electrical contacts in two-dimensional (2D) semiconductors is increasingly critical with the continuous scaling down of transistors. van der Waals (vdW) contacts with weak Fermi-level pinning are still hindered by the additional contact resistance due to weak interlayer coupling. Here, based on first-principles, we propose to exploit hydrogen-bonding interactions to intrinsically overcome the inherent vdW gap. Various metal/semiconductor heterojunctions with hydroxyl-terminated MXenes as the metal electrode demonstrate clean Ohmic contacts with ultralow contact resistance approaching the quantum limit via strong hydrogen-bonding of O–H⋯X (X = N, O, S, Se, etc.) at the interface. Hydrogen-bonding contacts are further shown to be an advantageous approach to achieve near-perfect N-type contacts for emerging 2D nitride, oxide, halide, and chalcogenide semiconductors that can simultaneously approach the modified Schottky–Mott limit. We finally discuss the general design concepts for hydrogen-bonding contacts, demonstrating their potential to go beyond vdW contacts in achieving ideal electrical contacts in 2D semiconductors.

文章链接：

Hydrogen-bonding enables two-dimensional metal/semiconductor tunable contacts approaching the quantum limit and the modified Schottky–Mott limit simultaneously – Materials Horizons (RSC Publishing)