近期，本课题组张敏老师和张娇娜同学分别以通讯作者和第一作者在Advanced Materials Interfaces上发表了题为“Analysis of Carrier Behavior for Amorphous Indium Gallium Zinc Oxide After Supercritical Carbon Dioxide Treatment”的研究成果。
本文首次研究了a-IGZO 在超临界二氧化碳处理前后性能变化的机制。通过设计不同厚度的a-IGZO 薄膜作为沟道的器件，分析得出超临界二氧化碳处理对于采用薄a-IGZO薄膜的器件性能提升更佳。且通过化学键表征和仿真结果证明了该处理方式可提高a-IGZO器件的原因是对于氧空位缺陷的修复以及载流子浓度的提升。该工作的研究深入探讨了对a-IGZO薄膜工作机理，使得该领域学者对a-IGZO的理解更为深刻。
Amorphous indium gallium zinc oxide (a-IGZO) thin-film quality can be enhanced using supercritical carbon dioxide (SCCO2). How to verify specific and accurate mechanism for the carriers inside an a-IGZO layer before and after the SCCO2 treatment is worth investigating. This work designs a-IGZO thin film transistors with different channel thicknesses (41, 28, and 19 nm), treats them using SCCO2, and analyzes the change in carrier behavior. The effect of the SCCO2 on both carrier density and carrier transport is investigated using energy band information, Technology Computer Aided Design (TCAD) simulations on density of states and resistance analyses. After the treatment, the thinner channel thickness exhibits better drivability enhancement. That is because of the fewer traps and smoother carrier transportation path resulted from better M−O−M frameworks, and decreased M−OH bonds as well as interface charges. Besides the traditional analysis methods and TCAD simulations, layer-by-layer X-ray photoelectron spectroscopy and sheet resistance measurement are also applied to verify the detailed carrier mechanism behind different phenomena.
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