恭喜刘晃佰同学在知名期刊Nano Energy发表期刊论文

恭喜刘晃佰同学在一区国际期刊Nano Energy上发表了题为" Optoelectronic dual-synapse based on wafer-level GaN-on-Si device incorporating embedded SiO2 barrier layers"的期刊论文.

网页链接：https://doi.org/10.1016/j.nanoen.2024.109564