超临界材料与电子实验室
Superctitical Materials and Electronics Laboratory

科研成果

学术成果

  张冠张老师至今共发表论文165篇(SCI期刊165篇 + EI会议17篇),所有SCI论文被引用总计 3,309 次,1篇ESI高被引论文,H指数34。在发明专利方面,共拥有15个中国大陆专利,23个中国台湾的专利,13个美国专利。

 

Publications

*:通讯作者)

Journal

2024

165. Lei Li, Huangbai Liu, Qunkai Peng, Tianjiao Dai, Zehui Peng, Yihua Xu, Hao Yu, Xinnan Lin, Kuan-Chang Chang*.Neuromorphic Engineering in GaN HEMTs Exploiting Dendritic Dislocations for Neuromodulations Behaviors and Adaptive Intelligent Power Forecasting Systems. Nano Energy, 2024: 110129.(IF:16.8)

网页链接:https://doi.org/10.1016/j.nanoen.2024.110129

164. Kuan-Chang Chang, Huangbai Liu, Xinqin Duan, Zehui Peng, Xinnan Lin*, Lei Li*. Optoelectronic dual-synapse based on wafer-level GaN-on-Si device incorporating embedded SiO2 barrier layers. Nano Energy, 2024, 125: 109564.(IF:16.8)

网页链接:https://doi.org/10.1016/j.nanoen.2024.109564

163. Hao Li, Fei Liu, Kuan‐Chang Chang, Xinnan Lin, Shaojun Liu*. Accelerating B‐site cation ordering‐disordering transition and improving dielectric properties of Ba (Co, Zn) 1/3Nb2/3O3 complex perovskite microwave ceramics by CuO doping. Journal of the American Ceramic Society, 2024.(IF:3.5)

网页链接:https://doi.org/10.1111/jace.19873

162. Kuan-Chang Chang, Yihua Xu, Mingge Wang, Zehui Peng, Dar-Jen Hsieh, Lei Li*. Efficient Synaptic Emulation and Ultralow Power Digital-Analog Conversion in Cellulose-Based Neural Devices through Molecular Polarization. ACS Materials Letters, 2024, 6: 4106-4114.(IF:9.6)

网页链接:https://doi.org/10.1021/acsmaterialslett.4c01002

161. Mingqiang Wang, Jie Wang, Lei Li, Yanxin Liu, Zehui Peng, Xinqing Duan, Xibei Feng, Zewen Wang, Shidong Wang, Mingge Wang, Yufeng Jin, Dar-Jen Hsieh, Kuan-Chang Chang*. Retinoic Acid-Poly (lactic) Acid Composite for Biocompatible Optoelectronic Synapses with Flexible Curvature Detection and Biomimetic Imprinting Capabilities. ACS Materials Letters, 2024, 6(5): 1999-2006.((IF:9.6)

网页链接:https://doi.org/10.1021/acsmaterialslett.4c00276

160. Mingqiang Wang, Lei Li, Xinqing Duan, Zewen Wang, Shidong Wang, Yanxin Liu, Zehui Peng, Jie Wang, Mingge Wang, Fei Zheng, Yufeng Jin, Kuan-Chang Chang*. Ultraflexible, High-Performance Transistors and Logic Circuits on Biocompatible Polylactic Acid (PLA) Substrate. ACS Applied Materials & Interfaces, 2024, 16(9): 11749-11757.(IF8.3)

网页链接:https://doi.org/10.1021/acsami.3c15347

159. Jiaona Zhang, Wanting Wang, Jiahao Zhu, Chunxiu Wang, Tianyu Zhu, Changbin Zhao, Jialiang Wang, Shengdong Zhang, Xinwei Wang, Kuan-Chang Chang, Hong Meng, Mansun Chan, Min Zhang*. Ultraflexible Monolithic Three-Dimensional Static Random Access Memory. ACS nano, 2024, 18(4): 3362-3368.(IF:15.8)

网页链接:https://doi.org/10.1021/acsnano.3c10182

158. Xinqing Duan, Lei Li, Zehui Peng, Mingqiang Wang, Yanxin Liu, Dar‐Jen Hsieh, Kuan‐Chang Chang*. Ultralow Power, Cleft Size‐Adjustable and pH‐Sensitive Hyaluronic Acid (HA) Biodevices for Acid‐Sensing Ion Channels Emulation. Small, 2024: 2405207.(IF:13.0)

网页链接:https://doi.org/10.1002/smll.202405207

157. Zehui Peng, Huangbai Liu, Hao Yu, Lei Li, Kuan-Chang Chang*. Constructing drain surrounded double gate structure in AlGaN/GaN HEMT for boosting breakdown voltage. RSC advances, 2024, 14(31): 22238-22243.(IF:3.9)

网页链接:10.1039/D4RA03508A

156. Kuan-Chang Chang, Xibei Feng, Xinqing Duan, Huangbai Liu, Yanxin Liu, Zehui Peng, Xinnan Lin, Lei Li*. Integrating ultraviolet sensing and memory functions in gallium nitride-based optoelectronic devices. Nanoscale Horizons, 2024.(IF:8.0)

网页链接:10.1039/D3NH00560G

专利:

张冠张; 李蕾; 许艺铧; 彭群凯. 一种动态随机存储器、神经元行为模拟系统和方法.2024.

李蕾; 张冠张; 彭泽晖; 许艺铧. 一种表面平整化方法及衬底. 2024.

刘新科; 黄烨莹; 秦宏志;张冠张; 黎晓华; 贺威; 朱德亮. 一种制备低电阻率衬底的方法. 2024

刘新科; 王敏; 秦宏志; 张冠张; 黎晓华; 贺威; 朱德亮. 一种制备半绝缘氮化镓衬底的方法. 2024.

 

2023

155. Mingqiang Wang, Xinqing Duan, Lei Li, Shidong Wang, Yufeng Jin, Kuan-Chang Chang*. Performance improvement of poly (lactic acid) films for bioelectronics with eco-friendly supercritical fluids combined with activated-carbon technique. Sustainable Materials and Technologies, 2023, 38: e00739.(IF:8.6)

网页链接:https://doi.org/10.1016/j.susmat.2023.e00739

154. Jiaona Zhang, Wanting Wang, Jiahao Zhu, Jialiang Wang, Changbin Zhao, Tianyu Zhu, Qinqi Ren, Qi Liu, Rui Qiu, Min Zhang*, Xinwei Wang, Hong Meng, Kuan-Chang Chang, Shengdong Zhang, Mansun Chan. Ultra‐Flexible Monolithic 3D Complementary Metal‐Oxide‐Semiconductor Electronics. Advanced Functional Materials, 2023, 33(48): 2305379.(IF:18.5)

网页链接:https://doi.org/10.1002/adfm.202305379

153. Lei Li, Shidong Wang, Xinqing Duan, Zewen Wang, Kuan-Chang Chang*. Targeted Chemical Processing Initiating Biosome Action-Potential-Matched Artificial Synapses for the Brain–Machine Interface. ACS Applied Materials & Interfaces, 2023, 15(34): 40753-40761.(IF:8.3)

网页链接:https://doi.org/10.1021/acsami.3c07684

152.Zhuo LiuHung-Chih ChinPei Huan, Fei ZhengLei Li and Kuan-Chang Chang*. Flexible a-InGaZnO Thin Film Transistor Based on Biocompatible Sodium Alginate. Journal of Physics: Conference Series. IOP Publishing, 2023, 2557(1): 012093.

网页链接:10.1088/1742-6596/2557/1/012093

151. Lei Li, Xinqing Duan, Pei Huang, Luodan Hu, Kuan-Chang Chang*. Realizing Ultrapurified Poly (vinyl alcohol) with High Insulation and Transparency by Ecofriendly Supercritical Assisted Elimination of Sodium-Associated Impurities. ACS Materials Letters, 2023, 5(3): 775-782.(IF9.6)

网页链接:https://doi.org/10.1021/acsmaterialslett.2c01164

150. Kuan-Chang ChangXibei FengHuangbai LiuKai LiuXinnan Lin*Lei Li*.  Computational-fitting method for mobility extraction in GaN HEMT, RSC advances, 2023, 13(46): 32694-32698. (IF3.9)

网页链接:10.1039/D3RA06630D

专利:

李蕾; 张冠张; 许艺铧. 一种低功耗数模转换器件、数模转换系统以及方法. 2023.

李蕾; 张冠张; 许艺铧. 一种可植入的电刺激设备、控制方法以及控制系统. 2023.

张冠张; 李蕾; 刘炎欣. 一种生物兼容的人机接口系统、制造方法以及监测设备. 2023.

张冠张; 李蕾; 王仕栋. 一种提升器件光学特性的处理方法. 2023.

张冠张; 许艺铧; 李蕾. 一种基于遗忘时变特性求解方程的方法及系统. 2023.

张冠张; 李蕾; 王正大; 冯西贝. 一种源漏端引入势垒的半导体器件及其制造方法. 2023.

张冠张; 李蕾; 黄培. 生物兼容器件性能的测试方法、生物兼容器件及制造方法. 2023.

张冠张; 李蕾; 刘炎欣; 王泽文. 一种基于生物组织的生物兼容集成电路系统及其制造方法. 2023.

张冠张; 李蕾; 周骞. 一种基于生物材料的光导纤维、制备方法以及生物材料. 2023.

张冠张; 李蕾; 郑斐; 王泽文. 半导体器件结构及其制造方法. 2023.

张冠张; 李蕾; 刘炎欣. 高生物兼容电子器件及其制造方法. 2023.

张冠张; 李蕾; 刘炎欣. 一种生物兼容材料双层薄膜电池及其制备方法. 2023.

 

2022

149. Jiaye Wu, Xuanyi Liu, Boris A. Malomed, Kuan-Chang Chang, Minghe Zhao, Kang Qi, Yanhua Sha, Ze Tao Xie, Marco Clementi, Camille-Sophie Brès, Shengdong Zhang, Hongyan Fu*, Qian Li*. Observation of SQUID‐Like Behavior in Fiber Laser with Intra‐Cavity Epsilon‐Near‐Zero Effect, Laser & Photonics Reviews, 2022, 16(12): 2200487. (IF9.8)

网页链接:https://doi.org/10.1002/lpor.202200487

148.F. Zheng, L. Li, L. Hu, X. Huang, T.P. Kuo, K. C. Chang*, “Self-Alignment Embedded Thin-Film Transistor with High Transparency and Optimized Performance”, Advanced Materials Technologies, 2022, 7(12): 2200879. (IF6.4)

网页链接:https://doi.org/10.1002/admt.202200879

147.P. Huang, L. Li, D. J. Hsieh and K. C. Chang*, “Electro-Optic Optimization of Porcine Collagen through Protein-Amicable Supercritical Treatment”, ACS Sustainable Chemistry & Engineering, 2022, 10, 48, 16037–16045. (IF9.224)

网页链接:https://pubs.acs.org/doi/abs/10.1021/acssuschemeng.2c05700

146.Q. Q. Ren, Y. P. Zhang, S. H. Ma, X. F, Wang, K. C. Chang, Y. M. Zhang, F. Yin, Z. G. Li*and M. Zhang*, “Low-temperature Supercritical Activation Enables High-performance Detection of Cell-Free DNA by All-carbon-nanotube Transistor”, Carbon, 2022, 196,120-127. (IF:11.037)

网页链接:https://doi.org/10.1016/j.carbon.2022.04.068

145.J. Wu, X. Liu, B. A. Malomed, K. C. Chang, M. Zhao, K. Qi, Y. Sha, Z. T. Xie, M. Clementi, C. Brès, S. Zhang, H. Fu* and Q. Li*, “Observation of SQUID-Like Behavior in Fiber Laser with Intra-Cavity Epsilon-Near-Zero Effect”, Laser & Photonics Reviews, 2022, 2200487. (IF:10.947)

144.F. Zheng, L. Li, L. Hu, X. Huang, T. Kuo and K. C. Chang*, “Self-Alignment Embedded Thin-Film Transistor with High Transparency and Optimized Performance”, Advanced Materials Technologies, 2022, 2200879. (IF:8.856)

网页链接:https://doi.org/10.1002/admt.202200879

143.F. Du, T. Xie, J. Wang, K. C. Chang, X. Lin*, F. Hou, R. Chen, A. Han and Z. Liu*, “All-HKMG-bounded SCR for Advanced ESD Protection in 14 nm FinFET Technology”, Semiconductor Science and Technology, 2022, 37(8), 085001. (IF:2.048)

网页链接:https://iopscience.iop.org/article/10.1088/1361-6641/ac773d/meta

142.K. C. Chang, Z. D. Wang, Q. Zhou, X. X. Zhang, X. N. Lin and L. Li*, “Exploration of Physicochemical Mechanism for Negative Bias Temperature Instability in GaN-HEMTs by Extracting Activation Energy of Dislocations”, Advanced Materials Interfaces, 2022, 9(24), 2200871. (IF:6.389)

网页链接:https://doi.org/10.1002/admi.202200871

141.K. C. Chang, T. J. Dai, Z. D. Wang, Z. W. Huang, X. N. Lin and L. Li*, “The observation of Gaussian Distribution and Origination Identification of Deep Defects in AlGaN/GaN MIS-HEMT”, Applied Physics Letters, 2022, 120(17), 172107. (IF:3.971)

网页链接:https://doi.org/10.1063/5.0088928

140.F. Du, K. C. Chang, X. Lin*, F. Hou, Y. Zhang, A. Han, X. Luo and Z. Liu*, “Compact and Fast Response Dual-Directional SCR for Nanoscale ESD Protection Engineering”, IEEE Transactions on Electron Devices, 2022, 69(6), 3490–3493. (IF:3.221)

网页链接:https://doi.org/10.1109/TED.2022.3163238

 

2021

139.P. Huang, K. C. Chang, J. Ge, C. Peng, X. Wu*, J. Chen and Z. Lin, “Offset-Compensation High-Performance Sense Amplifier for Low-Voltage DRAM Based on Current Mirror and Switching Point”, IEEE Transactions on Circuits and Systems II: Express Briefs, 2021, 69(4), 2011–2015. (IF:3.691)

网页链接:10.1109/TCSII.2022.3143504

138.J. Zhang, M. Zhang*, K. C. Chang, Z. Rong, Y. Zhang, S. Zhang and M. Chan, “Analysis of Carrier Behavior for Amorphous Indium Gallium Zinc Oxide after Supercritical Carbon Dioxide Treatment”, Advanced Materials Interfaces, 2021, 9(14), 2102349. (IF:6.389)

网页链接:https://doi.org/10.1002/admi.202102349

137.K. C. Chang, Q. Zhou, K. Liu, L. Li*, R. Zhang, H.-J. Liu* and T.-P. Kuo, “Eco-Friendly, Highly Efficient Ethanol-Assisted Supercritical Preparation of an Ultrathin ZnO Nanotube”, ACS Sustainable Chemistry & Engineering, 2021, 9(46), 15478–15483. (IF: 9.224)

网页链接:https://doi.org/10.1021/acssuschemeng.1c04875

136.Z. Peng, F. Wu, L. Jiang, G. Cao, B. Jiang, G. Cheng, S. Ke, K. C. Chang*, L. Li, and C. Ye*, “HfO2-Based Memristor as an Artificial Synapse for Neuromorphic Computing with Tri-Layer HfO2/BiFeO3/HfO2 Design”, Advanced Functional Materials, 2021, 31(48), 2107131. (IF:19.924)

网页链接:https://doi.org/10.1002/adfm.202107131

135.L. Hu, L. Li, K. C. Chang*, X. Lin, P. Huang and S. Zhang, “Ultrasensitive Freestanding and Mechanically Durable Artificial Synapse with Attojoule Power Based on Na‐Salt Doped Polymer for Biocompatible Neuromorphic Interface”, Advanced Functional Materials, 2021, 31(42), 2106015. (IF:19.924)

网页链接:https://doi.org/10.1002/adfm.202106015

134.L. Li, L. D. Hu, K. Liu, K. C. Chang*, R. Zhang, X. Lin, S. D. Zhang, P. Huang, H. J. Liu and T. P. Kuo, “Bifunctional Homologous Alkali-metal Artificial Synapse with Regenerative Ability and Mechanism Imitation of Voltage-gated Ion Channels”, Material Horizons, 2021, 8(11), 3072-3081. (IF:15.717)

网页链接:https://doi.org/10.1039/D1MH01012C

133.K. C. Chang, K. Liu, L. D. Hu, L. Li*, X. Lin, S. D. Zhang, R. Zhang, H. J. Liu and T. P. Kuo, “Supercritical Ammoniation-Enabled Interfacial Polarization for Function-Mode Transformation and Overall Optimization of Thin-Film Transistors”, ACS Applied Materials and Interfaces, 2021, 13(33), 40053–40061. (IF:10.383)

网页链接:https://doi.org/10.1021/acsami.1c09673

132.J. Wu, X. Liu, H. Fu, K. C. Chang, S. Zhang, H. Y. Fu and Q. Li*, “Manipulation of epsilon-near-zero wavelength for the optimization of linear and nonlinear absorption by supercritical fluid”, Scientific Reports, 2021, 11(1), 15936. (IF:4.997)

网页链接:https://www.nature.com/articles/s41598-021-95513-6

131.Z. Xin, Y. Tan, T. Chen, E. Iranmanesh, L. Li, K. C. Chang*, S. Zhang, C. Liu and H. Zhou*, “Visible-light-stimulated Synaptic InGaZnO Phototransistors Enabled by Wavelength-tunable Perovskite Quantum Dots”, Nanoscale Advances, 2021, 3(17), 5046–5052. (IF:5.598)

网页链接:https://pubs.rsc.org/en/content/articlehtml/2021/na/d1na00410g

130.F. Du, K. C. Chang, X. Lin*, F. Hou, L. Chen, X. Luo and Z. Liu*, “Novel Symmetrical Dual-Directional SCR with p-Type Guard Ring for High-Voltage ESD Protection”, IEEE Transactions on Electron Devices, 2021, 68(8), 4164–4167. (IF:3.221)

网页链接:10.1109/TED.2021.3091658

129.L. Li, T. J. Dai, K. Liu, K. C. Chang*, R. Zhang, X. Lin, H. J. Liu, Y. C. Lai and T. P. Kuo, “Achieving Complementary Resistive Switching and Multi-Bit Storage Goals by Modulating the Dual-Ion Reaction through Supercritical Fluid-Assisted Ammoniation”, Nanoscale, 2021, 13(33), 14035–14040. (IF:8.307)

网页链接:https://doi.org/10.1039/D1NR03356E

128.M. Li, W.-Y. Cheng, Y.-C. Li, H.-M. Wu, Y.-C. Wu, H.-W. Lu, S.-L. Cheng, L. Li, K. C. Chang, H.-J. Liu, Y.-F. Lin*, L.-Y. Lin* and Y.-C. Lai*, “Deformable, resilient, and Mechanically-Durable Triboelectric Nanogenerator Based on Recycled Coffee Waste for Wearable Power and Self-Powered Smart Sensors”, Nano Energy, 2021, 79, 1054054. (IF:19.069)

网页链接:https://doi.org/10.1016/j.nanoen.2020.105405

127.X. F. Wang, K. C. Chang, Z. W. Zhang, Q, Liu, L. Lei, S. H. Ma and M. Zhang*, “Performance Enhancement and Mechanism Exploration of All-Carbon-Nanotube Memory with Hydroxylation and Dehydration Through Supercritical Carbon Dioxide”, Carbon, 2021, 173, 97-104. (IF:11.307)

网页链接:https://doi.org/10.1016/j.carbon.2020.10.084

126.J. N. Zhang, W. H. Huang, K. C. Chang, Y. H. Shi, C. B. Zhao, X. W. Wang, H, Meng, S. D. Zhang and M. Zhang*, “Performance Enhancement and Bending Restoration for Flexible Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors by Low-Temperature Supercritical Dehydration Treatment”, ACS Applied Materials & Interfaces, 2021, 13(7), 8584-8594. (IF:10.383)

网页链接:https://doi.org/10.1021/acsami.0c21611

125.K. C. Chang*, L. D. Hu, K. Qi, L. Li, X. N. Lin, S. D Zhang, Z. W. Wang, Y. C. Lai, H. J. Liu and T. P. Kuo, “Low-temperature supercritical dehydroxylation for achieving an ultra-low subthreshold swing of thin-film transistors”, Nanoscale, 2021, 13(11), 5700-5705. (IF:8.307)

DOI:10.1039/D0NR08208B

文章网页链接:https://doi.org/10.1039/D0NR08208B

124.L. D. Hu, H. J. Lou*, W. T. Li, K. C. Chang* and X. N. Lin*, “Suppression of Statistical Variability in Junctionless FinFET Using Accumulation-Mode and Charge Plasma Structure”, IEEE Transactions on Electron Devices, 2021, 68(1), 399-404. (IF:3.221)

DOI:10.1109/TED.2020.3040137

文章网页链接:https://doi.org/10.1109/TED.2020.3040137

2020

123.Y. Shi, Y. Zheng, J. Wang, R. Zhao, T. Wang, C. Zhao, K. C. Chang, H. Meng, X. Wang, “Hysteresis-Free, High-Performance Polymer-Dielectric Organic Field-Effect Transistors Enabled by Supercritical Fluid”, Research, 2020, 6587102. (IF11.036)

文章网页链接:https://doi.org/10.34133/2020/6587102

122.M. H. Liu, Z. W. Zhang, K. C. Chang, X. N. Lin, L. Li and Y. F. Jin*, “Characterization and optimization of AlGaN/GaN metal-insulator semiconductor heterostructure field effect transistors using supercritical CO2/H2O technology”, Chinese Physics B, 2020, 29(12), 127101. (IF:1.652)

DOI:10.1088/1674-1056/abb22f

文章网页链接:https://doi.org/10.1088/1674-1056/abb22f

121.Y. X. Liu, C. Ye*, K. C. Chang, L. Li, B. Jiang, C. Xia, L. Liu, X. Zhang, X. Y. Liu, T. Xia, Z. H. Peng, G. S. Cao, G. Cheng, S. W. Ke and J. H. Wang, “A Robust and Low-Power Bismuth Doped Tin Oxide Memristor Derived from Coaxial Conductive Filaments”, Small, 2020, 16(46), 2004619. (IF:15.153)

DOI:10.1002/smll.202004619

文章网页链接:https://doi.org/10.1002/smll.202004619

120.K. C. Chang, T. J. Dai, L. Li*, X. N. Lin*, S. D. Zhang, Y. C. Lai, H. J. Liu and Y. E. Syu, “Unveiling the influence of surrounding materials and realization of multi-level storage in resistive switching memory”, Nanoscale, 2020, 12(43), 22070-22074. (IF:8.307)

DOI:10.1039/d0nr05900e

文章网页链接:https://doi.org/10.1039/d0nr05900e

119.K. Qi, L. Li, K. C. Chang*, X. N. Lin*, Y. C. Lai, H. T. Zheng, G. Y. Huang and T. P. Kuo, “Supercritical Removal Method: Rapid Elimination of Impurities in Polymethyl-methacrylate at Near Room Temperature and Mechanism Investigation of Insulating Property Improvement”, Journal of Materials Chemistry C, 2020, 8(44), 15664-15668. (IF:8.067)

DOI:10.1039/D0TC03975F

文章网页链接:https://doi.org/10.1039/D0TC03975F

118.L. Li, K. C. Chang*, X. N. Lin*, Y. C. Lai, R. Zhang and T. P. Kuo, “Variable-temperature activation energy extraction to clarify the physical and chemical mechanisms of the resistive switching process”, Nanoscale, 2020, 12(29), 15721-15724. (IF:8.307)

DOI:10.1039/d0nr04053c

文章网页链接:https://doi.org/10.1039/d0nr04053c

 

117.L. Li, K. C. Chang*, C. Ye*, X. Lin, R. Zhang, Z. Xu, W. Xiong, Y. Zhou and T. P. Kuo, “An Indirect Way to Achieve Comprehensive Performance Improvement of Resistive Memory: When Hafnium Meets ITO in Electrode”, Nanoscale, 2020, 12(5), 3267-3272. (IF: 8.307)

DOI:10.1039/c9nr08943h

文章网页链接:https://doi.org/10.1039/c9nr08943h

2019

116.C. Ye, Z. Xu, K. C. Chang*, L. Li*, X. N. Lin, R. Zhang, Y. Zhou, W. Xiong and T. P. Kuo, “Hafnium nanocrystals observed in a HfTiO compound film bring about excellent performance of flexible selectors in memory integration”, Nanoscale, 2019, 11(43), 20792-20796. (IF: 8.307)

DOI:10.1039/C9NR07470H

文章网页链接:https://doi.org/10.1039/C9NR07470H

115.L. Li, K. C. Chang*, X. N. Lin, R. Zhang and J. H. Lou, “Insulating Property Improvement of Polyimide in Devices by Low‐Temperature Supercritical Fluids”, Advanced Electronic Materials, 2019, 5(12), 1900580. (IF:7.633)

DOI:10.1002/aelm.201900580

文章网页链接:https://doi.org/10.1002/aelm.201900580

114.Z. W. Zhang, M. Zhang*, C. H. Du, L. Li and K. C. Chang, “Improving Performance of All-Carbon-Nanotube Thin-Film Transistors by Low Temperature Supercritical CO2 Fluid Activation”, IEEE Electron Device Letters, 2019, 40(6), 921-924. (IF:4.816)

DOI:10.1109/LED.2019.2912197

文章网页链接:https://doi.org/10.1109/LED.2019.2912197

2018

113.L. Zhang, H. Huang, C. Ye*, K. C. Chang, R. L. Zhang, Q. Xia, X. D. Wei, W. Wei and W. F. Wang, “Exploration of highly enhanced performance and resistive switching mechanism in hafnium doping ZnO memristive device”, Semiconductor Science and Technology, 2018, 33(8), 085013. (IF:2.048)

DOI:10.1088/1361-6641/aacff1

文章网页链接:https://doi.org/10.1088/1361-6641/aacff1

112.Y. P. Li, H. Q. Wang*, T. J. Chu, Y. C. Li, X. J. Li, X. X. Liao, X. D. Wang, H. Zhou, J. Y. Kang, K. C. Chang, T. C. Chang*, T. M. Tsai and J. C. Zheng*, “Tuning the nanostructures and optical properties of undoped and N-doped ZnO by supercritical fluid treatment”, AIP Advances, 2018, 8(5), 055310. (IF:1.697)

DOI:10.1063/1.5026446

文章网页链接:https://doi.org/10.1063/1.5026446

111.R. C. Wang*, Y. W. Chen, T. C. Chang, K. C. Chang and T. M. Tsai, “ZnO/N:ZnO core-shell nanorods prepared via supercritical CO2-N process: Tunable doping and response reversal phenomena for gas sensing”, Ceramics International, 2018, 44(6), 7296-7299. (IF:5.532)

DOI:10.1016/j.ceramint.2018.01.018

文章网页链接:https://doi.org/10.1016/j.ceramint.2018.01.018

110.K. H. Chen*, T. M. Tsai, C. M. Cheng*, S. J. Huang, K. C. Chang, S. P. Liang and T. F. Young, “Schottky Emission Distance and Barrier Height Properties of Bipolar Switching Gd:SiOx RRAM Devices under Different Oxygen Concentration Environments”, Materials, 2018, 11(1), 43. (IF:3.748)

DOI:10.3390/ma11010043

文章网页链接:https://doi.org/10.3390/ma11010043

109.Q. Xia, J. J. Wu, C. H. Pan, C. Ye*, K. C. Chang, T. C. Chang, C. C. Shih and C. H. Wu, “Impact of Forming Compliance Current on Storage Window Induced by a Gadolinium Electrode in Oxide-Based Resistive Random Access Memory”, IEEE Transactions on Electron Devices, 2018, 65(1), 96-100. (IF:3.221)

DOI:10.1109/TED.2017.2775104

文章网页链接:https://doi.org/10.1109/TED.2017.2775104

2017

108.F. Y. Yuan, N. Deng*, C. C. Shih, Y. T. Tseng, T. C. Chang*, K. C. Chang, M. H. Wang, W. C. Chen, H. X. Zheng, H. Q. Wu, H. Qian and S. M. Sze, “Conduction Mechanism and Improved Endurance in HfO2-Based RRAM with Nitridation Treatment”, Nanoscale Research Letters, 2017, 12(1), 574. (IF:5.418)

DOI:10.1186/s11671-017-2330-3

文章网页链接:https://doi.org/10.1186/s11671-017-2330-3

107.H. L. Chen, P. H. Chen, T. C. Chang*, T. F. Young*, M. C. Wang, C. F. Ai, T. M. Tsai, K. C. Chang, M. C. Chen, Y. T. Su, C. C. Yang and C. C. Lin, “Super Critical Fluid Technique to Enhance Current Output on Amorphous Silicon-Based Photovoltaic”, IEEE Electron Device Letters, 2017, 38(10), 1401-1404. (IF:4.816)

DOI:10.1109/LED.2017.2747096

文章网页链接:https://doi.org/10.1109/LED.2017.2747096

106.H. C. Chiang, T. C. Chang*, P. Y. Liao, B. W. Chen, Y. C. Tsao, T. M. Tsai, Y. C. Chien, Y. C. Yang, K. F. Chen, C. L. Yang, Y. J. Hung, K. C. Chang, S. D. Zhang, S. C. Lin and C. Y. Yeh, “Investigating Degradation Behaviors Induced by Mobile Cu Ions under High Temperature Negative Bias Stress in a-InGaZnO Thin Film Transistors”, Applied Physics Letters, 2017, 111(13), 133504. (IF:3.971)

DOI:10.1063/1.5004526

文章网页链接:https://doi.org/10.1063/1.5004526

105.Y. T. Tseng, P. H. Chen, T. C. Chang*, K. C. Chang*, T. M. Tsai, C. C. Shih, H. C. Huang, C. C. Yang, C. Y. Lin, C. H. Wu, H. X. Zheng, S. D. Zhang and S. M. Sze, “Solving the Scaling Issue of Increasing Forming Voltage in Resistive Access Memory Using High-k Spacer Structure”, Advanced Electronic Materials, 2017, 3(9), 1700171. (IF:7.633)

DOI:10.1002/aelm.201700171

文章网页链接:https://doi.org/10.1002/aelm.201700171

104.C. H. Wu, C. H. Pan, P. H. Chen, T. C. Chang*, T. M. Tsai, K. C. Chang, C. C. Shih, T. Y. Chi, T. J. Chu, J. J. Wu, X. Q. Du, H. X. Zheng and S. M. Sze, “Inert Pt Electrode Switching Mechanism After Controlled Polarity-forming Process in In2O3-based Resistive Random Access Memory”, Applied Physics Express, 2017, 10(9), 094102. (IF:2.819)

DOI:10.7567/APEX.10.094102

文章网页链接:https://doi.org/10.7567/APEX.10.094102

103.P. H. Chen, T. C. Chang*, K. C. Chang*, T. M. Tsai, C. H. Pan, C. C. Shih, C. H. Wu, C. C. Yang, W. C. Chen, J. C. Lin, M. H. Wang, H. X. Zheng, M. C. Chen and S. M. Sze, “Effects of Plasma Treatment Time on Surface Characteristics of Indium-Tin-Oxide Film for Resistive Switching Storage Applications”, Applied Surface Science, 2017, 414, 224-229. (IF:7.392)

DOI:10.1016/j.apsusc.2017.04.060

文章网页链接:https://doi.org/10.1016/j.apsusc.2017.04.060

102.B. W. Chen, H. L. Chen, T. C. Chang*, Y. J. Hung, S. P. Huang, Y. Z. Zheng, Y. H. Lin, P. Y. Liao, L. H. Chen, J. W. Yang, H. C. Chiang, W. C. Su, Y. C. Tsao, A. K. Chu, H. W. Li, C. H. Tsai, H. H. Lu, K. C. Chang and T. F Young, “Systematic Analysis of High-Current Effects in Flexible Polycrystalline-Silicon Transistors Fabricated on Polyimide”, IEEE Transactions on Electron Devices, 2017, 64(8), 3167-3173. (IF:3.221)

DOI:10.1109/TED.2017.2715500

文章网页链接:https://doi.org/10.1109/TED.2017.2715500

101.C. Y. Lin, P. H. Chen, T. C. Chang*, K. C. Chang*, S. D. Zhang, T. M. Tsai, C. H. Pan, M. C. Chen, Y. T. Su, Y. T. Tseng, Y. F. Chang, Y. C. Chen, H. C. Huang and S. M. Sze, “Attaining Resistive Switching Characteristics and Selector Properties by Varying Forming Polarities in a Single HfO2-based RRAM Device with a Vanadium Electrode”, Nanoscale, 2017, 9(25), 8586-8590. (IF:8.307)

DOI:10.1039/c7nr02305g

文章网页链接:https://doi.org/10.1039/c7nr02305g

100.Y. H. Lu, T. C. Chang*, L. H. Chen, Y. S. Lin, X. W. Liu, J. C. Liao, C. Y. Lin, C. H. Lien, K. C. Chang* and S. D. Zhang, “Abnormal Recovery Phenomenon Induced by Hole Injection During Hot Carrier Degradation in SOI n-MOSFETs”, IEEE Electron Device Letters, 2017, 38(7), 835-838. (IF:4.816)

DOI:10.1109/LED.2017.2703309

文章网页链接:https://doi.org/10.1109/LED.2017.2703309

99.P. Y. Liao, T. C. Chang*, W. C. Su, B. W. Chen, L. H. Chen, T. Y. Hsieh, C. Y. Yang, K. C. Chang*, S. D. Zhang, Y. Y. Huang, H. M. Chang and S. C. Chiang, “Impact of Repeated Uniaxial Mechanical Strain on Flexible a-IGZO Thin Film Transistors with Symmetric and Asymmetric Structures”, Applied Physics Letters, 2017, 110(26), 263505. (IF:3.971)

DOI:10.1063/1.4990964

文章网页链接:https://doi.org/10.1063/1.4990964

98.X. Q. Du, X. J. Wu, T. C. Chang*, K. C. Chang*, C. H. Pan, C. H. Wu, Y. S. Lin, P. H. Chen, S. D. Zhang and S. M. Sze, “Recovery of Failed Resistive Switching Random Access Memory Devices by a Low-temperature Supercritical Treatment”, Applied Physics Express, 2017, 10(6), 064001. (IF:2.819)

DOI:10.7567/APEX.10.064001

文章网页链接:https://doi.org/10.7567/APEX.10.064001

97.C. Y. Lin, T. C. Chang*, K. J. Liu, L. H. Chen, J. Y. Tsai, C. E. Chen, Y. H. Lu, H. W. Liu, J. C. Liao and K. C. Chang*, “Analysis of Contrasting Degradation Behaviors in Channel and Drift Regions Under Hot Carrier Stress in PDSOI LD N-Channel MOSFETs”, IEEE Electron Device Letters, 2017, 38(6), 705-707. (IF:4.816)

DOI:10.1109/LED.2017.2694972

文章网页链接:https://doi.org/10.1109/LED.2017.2694972

96.Y. X. Zhou, Y. Li, Y. T. Su, Z. R. Wang, L. Y. Shih, T. C. Chang*, K. C. Chang, S. B. Long, S. M. Sze and X. S. Miao*, “Nonvolatile Reconfigurable Sequential Logic in a HfO2 Resistive Random Access Memory Array”, Nanoscale, 2017, 9(20), 6649-6657. (IF:8.307)

DOI:10.1039/c7nr00934h

文章网页链接:https://doi.org/10.1039/c7nr00934h

95.P. Y. Liao, T. C. Chang*, Y. J. Chen, W. C. Su, B. W. Chen, L. H. Chen, T. Y. Hsieh, C. Y. Yang, K. C. Chang*, S. D. Zhang, Y. Y. Huang, H. M. Chang and S. C. Chiang, “The Effect of Device Electrode Geometry on Performance After Hot-Carrier Stress in Amorphous In-Ga-Zn-O Thin Film Transistors with Different Via-Contact Structures”, Applied Physics Letters, 2017, 110(20), 202103. (IF:3.971)

DOI:10.1063/1.4983713

文章网页链接:https://doi.org/10.1063/1.4983713

94.C. H. Wu, T. C. Chang*, T. M. Tsai, K. C. Chang*, T. J. Chu, C. H. Pan, Y. T. Su, P. H. Chen, S. K. Lin, S. J. Hu and S. M. Sze, “Effect of Charge Quantity in Conduction Mechanism of High- and Low-Resistance States During Forming Process in a One-Transistor-One-Resistor Resistance Random Access Memory”, Applied Physics Express, 2017, 10(5), 054101. (IF:2.819)

DOI:10.7567/APEX.10.054101

文章网页链接:https://doi.org/10.7567/APEX.10.054101

93.W. C. Su, T. C. Chang*, P. Y. Liao, Y. J. Chen, B. W. Chen, T. Y. Hsieh, C. L. Yang, Y. Y. Huang, H. M. Chang, S. C. Chiang, K. C. Chang* and T. M. Tsai, “The Effect of Asymmetrical Electrode Form After Negative Bias Illuminated Stress in Amorphous IGZO Thin Film Transistors”, Applied Physics Letters, 2017, 110(15), 159901. (IF:3.971)

DOI:10.1063/1.4979076

文章网页链接:https://doi.org/10.1063/1.4979076

92.B. W. Chen, T. C. Chang*, K. C. Chang*, Y. J. Hung, S. P. Huang, H. M. Chen, P. Y. Liao, Y. H. Lin, H. C. Huang, H. C. Chiang, C. L. Yang, Y. Z. Zheng, A. K. Chu, H. W. Li, C. H. Tsai, H. H. Lu, T. T. J. Wang and T. C. Chang, “Surface Engineering of Polycrystalline Silicon for Long-Term Mechanical Stress Endurance Enhancement in Flexible Low Temperature Poly-Si Thin-Film Transistors”, ACS Applied Materials & Interfaces, 2017, 9(13), 11942-11949. (IF:10.383)

DOI:10.1021/acsami.6b14525

文章网页链接:https://doi.org/10.1021/acsami.6b14525

91.Y. C. Chien, T. C. Chang*, H. C. Chiang, H. M. Chen, Y. C. Tsao, C. C. Shih, B. W. Chen, P. Y. Liao, T. Y. Chu, Y. C. Yang, Y. J. Hung, T. M. Tsai and K. C. Chang*, “Roel of H2O Molecules in Passivation of a-InGaZnO Thin Film Transistors”, IEEE Electron Device Letters, 2017, 38(4), 469-472. (IF:4.816)

DOI:10.1109/LED.2017.2666198

文章网页链接:https://doi.org/10.1109/LED.2017.2666198

90.T. M. Tsai*, C. H. Wu, K. C. Chang, C. H. Pan, P. H. Chen, N. K. Lin, J. C. Lin, Y. S. Lin, W. C. Chen, H. Q. Wu, N. Deng and H. Qian, “Controlling the Degree of Forming Soft-Breakdown and Producing Superior Endurance Performance by Inserting BN-Based Layers in Resistive Random Access Memory”, IEEE Electron Device Letters, 2017, 38(4), 445-448. (IF:4.816)

DOI:10.1109/LED.2017.2664881

文章网页链接:https://doi.org/10.1109/LED.2017.2664881

89.W. C. Chen, T. M. Tsai*, K. C. Chang*, H. L. Chen, C. C. Shih, C. C. Yang, J. C. Lin, Y. S. Lin, Y. T. Su and P. H. Chen, “Influence of Ammonia on Amorphous Carbon Resistive Random Access Memory”, IEEE Electron Device Letters, 2017, 38(4), 453-456. (IF:4.816)

DOI:10.1109/LED.2017.2668463

文章网页链接:https://doi.org/10.1109/LED.2017.2668463

88.K. H. Chen*, C. M. Cheng, M. C. Kao, K. C. Chang, T. C. Chang, T. M. Tsai, S. Wu and F. Y. Su, “Influence of Thermal Annealing Treatment on Bipolar Switching Properties of Vanadium Oxide Thin-Film Resistance Random-Access Memory Devices”, Journal of Electronic Materials, 2017, 46(4), 2147-2152. (IF:2.047)

DOI:10.1007/s11664-016-5148-3

文章网页链接:https://doi.org/10.1007/s11664-016-5148-3

87.Z. R. Wang, Y. T. Su, Y. Li, Y. X. Zhou, T. J. Chu, K. C. Chang, T. C. Chang*, T. M. Tsai, S. M. Sze and X. S. Miao, “Functionally Complete Boolean Logic in 1T1R Resistive Random Access Memory”, IEEE electron Device Letters, 2017, 38(2), 179-182. (IF:4.816)

DOI:10.1109/LED.2016.2645946

文章网页链接:https://doi.org/10.1109/LED.2016.2645946

86.P. H. Chen, T. C. Chang*, K. C. Chang, T. M. Tsai*, C. H. Pan, M. C. Chen, Y. T. Su, C. Y. Lin, Y. T. Tseng, H. C. Huang, H. Q. Wu, N. Deng, H. Qian and S. M. Sze, “Resistance Switching Characteristic Induced by O2 Plasma Treatment of an Indium Tin Oxide Film for Use as an Insulator in Resistive Random Access Memory”, ACS Applied Materials & Interfaces, 2017, 9(3), 3149-3155.(IF:10.383)

DOI:10.1021/acsami.6b14282

文章网页链接:https://doi.org/10.1021/acsami.6b14282

85.Y. T. Su, T. C. Chang*, T. M. Tsai, K. C. Chang, T. J. Chu, H. L. Chen, M. C. Chen, C. C. Yang, H. C. Huang, I. Lo, J. C. Zheng and S. M. Sze, “Suppression of Endurance Degradation by Applying Constant Voltage Stress in One-Transistor and One-Resistor Resistive Random Access Memory”, Japanese Journal of Applied Physics, 2017, 56(1), 010303. (IF:1.491)

DOI:10.7567/JJAP.56.010303

文章网页链接:https://doi.org/10.7567/JJAP.56.010303

84.C. Ye, J. J. Wu, C. H. Pan, T. M. Tsai*, K. C. Chang, H. Q. Wu, N. Deng and H. Qian, “Boosting the Performance of Resistive Switching Memory with a Transparent ITO Electrode Using Supercritical Fluid Nitridation”, RSC Advances, 2017, 7(19), 11585-11590. (IF:4.036)

DOI:10.1039/c7ra01104k

文章网页链接:https://doi.org/10.1039/c7ra01104k

2016

83.Y. Li, Y. X. Zhou, L. Xu, K. Lu, Z. R. Wang, N. Duan, L. Jiang, L. Cheng, T. C. Chang, K. C. Chang, H. J. Sun, K. H. Xue and X. S. Miao*, “Realization of Functional Complete Stateful Boolean Logic in Memristive Crossbar”, ACS Applied Materials & Interfaces, 2016, 8(50), 34559-34567. (IF:10.383)

DOI:10.1021/acsami.6b11465

文章网页链接:https://doi.org/10.1021/acsami.6b11465

82.P. H. Chen, T. C. Chang*, K. C. Chang, T. M. Tsai*, C. H. Pan, C. C. Shih, C. H. Wu, C. C. Yang, Y. T. Su, C. Y. Lin, Y. T. Tseng, M. C. Chen, R. C. Wang, C. C. Leu, K. H. Chen, I. Lo, J. C. Zheng and S. M. Sze, “Obtaining Lower Forming Voltage and Self-Compliance Current by Using a Nitride Gas/Indium-Tin Oxide Insulator in Resistive Random Access Memory”, IEEE Transactions on Electron Devices, 2016, 63(12), 4769-4775. (IF: 3.221)

DOI:10.1109/TED.2016.2619704

文章网页链接:https://doi.org/10.1109/TED.2016.2619704

81.P. H. Chen, T. C. Chang*, T. M. Tsai*, K. C. Chang, T. J. Chu, C. C. Shih, C. Y. Lin, P. H. Chen, H. Q. Wu, N. Deng, H. Qian and S. M. Sze, “Ultralow Power Resistance Random Access Memory Device and Oxygen Accumulation Mechanism in an Indilm-Tin-Oxide Electrode”, IEEE Transactions on Electron Devices, 2016, 63(12),4737-4743. (IF:3.221)

DOI:10.1109/TED.2016.2615807

文章网页链接:https://doi.org/10.1109/TED.2016.2615807

80.N. C. Chuang*, J. T. Lin, T. C. Chang, T. M. Tsai, K. C. Chang and C. W. Wu, “The Film Thickness Effect on Electrical Conduction Mechanisms and Characteristics of the Ni-Cr Thin Film Resistor”, IEEE Journal of the Electron Devices Society, 2016, 4(6), 441-444. (IF:2.523)

DOI:10.1109/JEDS.2016.2598189

文章网页链接:https://doi.org/10.1109/JEDS.2016.2598189

79.P. H. Chen, K. C. Chang, T. C. Chang*, T. M. Tsai*, C. H. Pan, Y. T. Su, C. H. Wu, W. C. Su, C. C. Yang, M. C. Chen, C. H. Tu, K. H. Chen, I. Lo, J. C. Zheng and S. M. Sze, “Modifying Indium-Tin-Oxide by Gas Cosputtering for Use as an Insulator in Resistive Random Access Memory”, IEEE Transactions on Electron Devices, 2016, 63(11), 4288-4294. (IF:3.221)

DOI:10.1109/TED.2016.2609642

文章网页链接:https://doi.org/10.1109/TED.2016.2609642

78.C. H. Pan, T. C. Chang*, T. M. Tsai, K. C. Chang*, P. H. Chen, S. W. Chang-Chien, M. C. Chen, H. C. Huang, H. Q. Wu and N. Deng, “Engineering Interface-Type Resistance Switching Based on Forming Current in ITO/Ga2O3:ITO/TiN Resistance Random Access Memory: Conduction Mechanisms, Temperature Effects, and Electrode Influence”. Applied Physics Letters, 2016, 109(18), 183509. (IF:3.971)

DOI:10.1063/1.4966181

文章网页链接:https://doi.org/10.1063/1.4966181

77.C. C. Shih, W. J. Chen, K. C. Chang, T. C. Chang*, T. M. Tsai*, T. J. Chu, Y. T. Tseng, C. H. Wu, W. C. Su, M. C. Chen, H. C. Huang, M. H. Wang, J. H. Chen, J. C. Zheng and S. M. Sze, “Ultra-Low Switching Voltage Induced by Inserting SiO2 Layer in Indium-Tin-Oxide-Based Resistance Random Access Memory”. IEEE Electron Device Letters. 2016, 37(10), 1276-1279. (IF:4.816)

DOI:10.1109/LED.2016.2599218

文章网页链接:https://doi.org/10.1109/LED.2016.2599218

76.C. H. Pan, T. C. Chang*, T. M. Tsai, K. C. Chang, T. J. Chu, P. H. Chen, M. C. Chen and S. M. Sze, “Adjustable Built-in Resistor on Oxygen-Vacancy-Rich Electrode-Capped Resistance Random Access Memory”, Applied Physics Express, 2016, 9(10), 104201. (IF:2.819)

DOI:10.7567/APEX.9.104201

文章网页链接:https://doi.org/10.7567/APEX.9.104201

75.C. H. Pan, T. C. Chang*, T. M. Tsai, K. C. Chang, T. J. Chu, W. Y. Lin, M. C. Chen and S. M. Sze, “Confirmation of Filament Dissolution Behavior by Analyzing Electrical Field Effect During Reset Process in Oxide-Based RRAM”, Applied Physics Letters, 2016, 109(13), 133503. (IF:3.917)

DOI:10.1063/1.4963672

文章网页链接:https://doi.org/10.1063/1.4963672

74.H. R. Chen, Y. C. Chen*, T. C. Chang*, K. C. Chang, T. M. Tsai, T. J. Chu, C. C. Shih, N. C. Chuang and K. Y. Wang, “Mechanisms of Low-Temperature Nitridation Technology on a TaN Thin Film Resistor for Temperature Sensor Applications”, Nanoscale Research Letters, 2016, 11,275. (IF:5.418)

DOI:10.1186/s11671-016-1480-z

文章网页链接:https://doi.org/10.1186/s11671-016-1480-z

73.T. C. Chang*, K. C. Chang, T. M. Tsai, T. J. Chu and S. M. Sze, “Resistance Random Access Memory”, Materials Today, 2016,19(5), 254-264. (IF:26.943)

DOI:DOI:10.1016/j.mattod.2015.11.009

文章网页链接:https://doi.org/DOI:10.1016/j.mattod.2015.11.009

72.F. Y. Jin, K. C. Chang, T. C. Chang*, T. M. Tsai, C. H. Pan, C. Y. Lin, P. H. Chen, M. C. Chen, H. C. Huang, I. Lo, J. C. Zheng and S. M. Sze, “Reducing Operation Voltages by Introducing a Low-K Switching Layer in Indium-Tin-Oxide-Based Resistance Random Access Memory”, Applied Physics Express, 2016, 9(6), 061501. (IF:2.819)

DOI:10.7567/APEX.9.061501

文章网页链接:https://doi.org/10.7567/APEX.9.061501

71.H. X. Zheng, T. C. Chang*, K. C. Chang, T. M. Tsai, C. C. Shih, R. Zhang, K. H. Chen, M. H. Wang, J. C. Zheng, I. Lo, C. H. Wu, Y. T. Tseng and S. M. Sze, “Complementary Resistive Switching Behavior for Conductive Bridge Random Access Memory”, Applied Physics Express, 2016, 9(6), 064201. (IF:2.819)

DOI:10.7567/APEX.9.064201

文章网页链接:https://doi.org/10.7567/APEX.9.064201

70.P. H. Chen, K. C. Chang, T. C. Chang*, T. M. Tsai*, C. H. Pan, C. Y, Lin, F. Y. Jin, M. C. Chen, H. C. Huang, M. H. Wang, I. Lo, J. C. Zheng and S. M. Sze, “Improving Performance by Doping Gadolinium into the Indium-Tin-Oxide Electrode in HfO2-Based Resistive Random Access Memory”, IEEE Electron Device Letters, 2016, 37(5), 584-587. (IF:4.816)

DOI:10.1109/LED.2016.2548499

文章网页链接:https://doi.org/10.1109/LED.2016.2548499

69.K. H. Chen*, K. C. Chang, T. C. Chang*, T. M. Tsai, S. P. Liang, T. F. Young, Y. E. Syu and S. M. Sze, “Illumination Effect on Bipolar Properties of Gd:SiO2 RRAM Devices Using Transparent Indium Tin Oxide Electrode”, Nanoscale Research Letters, 2016, 11, 224. (IF:5.418)

DOI:10.1186/s11671-016-1431-8

文章网页链接:https://doi.org/10.1186/s11671-016-1431-8

68.T. M. Tsai, K. C. Chang*, T. C. Chang*, R. Zhang, T. Wang, C. H. Pan, K. H. Chen, H. M. Chen, M. C. Chen, T. Y. Tseng, P. H. Chen, I. Lo, J. C. Zheng, J. C. Lou and S. M. Sze, “Resistive Switching Mechanism of Oxygen-Rich Indium Tin Oxide Resistance Random Access Memory”, IEEE electron Device Letters, 2016, 37(4), 408-411. (IF: 4.816)

DOI:10.1109/LED.2016.2532883

文章网页链接:https://doi.org/10.1109/LED.2016.2532883

67.Y. F. Chang*, B. Fowler, Y. C. Chen, F. Zhou, C. H. Pan, K. C. Chang, T. M. Tsai, T. C. Chang, S. M. Sze and J. C. Lee, "A synaptic device built in one diode-one resistor (1D-1R) architecture with intrinsic SiOx-based resistive switching memory", PHYSICAL SCIENCES REVIEWS, 2016, 1(4), 2365-6581. (IF: )

66.L. Xu, Q. Chen, L. Liao*, X. Q. Liu, T. C. Chang, K. C. Chang, T. M. Tsai, C. Z. Jiang, J. L. Wang* and J. C. Li, “Rational Hydrogenation for enhanced Mobility and High Reliability on ZnO-Based Thin Film Transistors: From Simulation to Experiment”, ACS Applied Materials & Interfaces, 2016, 8(8), 5408-5415. (IF:10.383)

DOI:10.1021/acsami.5b10220

文章网页链接:https://doi.org/10.1021/acsami.5b10220

65.P. H. Chen, K. C. Chang, T. C. Chang*, T. M. Tsai*, C. H. Pan, T. J. Chu, M. C. Chen, H. C. Huang, I. Lo, J. C. Zheng and S. M. Sze, “Bulk Oxygen-Ion Storage in Indium-Tin-Oxide Electrode for Improved Performance of HfO2-Based Resistive Random Access Memory”, IEEE Electron Device Letters, 2016, 37(3), 280-283. (IF:4.816)

DOI:10.1109/LED.2016.2522085

文章网页链接:https://doi.org/10.1109/LED.2016.2522085

64.K. H. Chen*, K. C. Chang, T. C. Chang, T. M. Tsai, K. H. Liao, Y. E. Syu and S. M. Sze, “Effect of Different Constant Compliance Current for Hopping Conduction Distance Properties of the Sn:SiOx Thin Film RRAM Devices”, Applied Physics A-Materials Science & Processing, 2016, 122(3), 228. (IF:2.983)

DOI:10.1007/s00339-016-9768-5

文章网页链接:https://doi.org/10.1007/s00339-016-9768-5

63.P. H. Chen, K. C. Chang, T. C. Chang*, T. M. Tsai, C. H. Pan, C. Y. Lin, F. Y. Jin, M. C. Chen, H. C. Huang, I. Lo, J. C. Zhang and S. M. Sze, “Effects of Erbium Doping of Indium Tin Oxide Electrode in Resistive Random Access Memory”, Applied Physics Express, 2016, 9(3), 034202. (IF:2.819)

DOI:10.7567/APEX.9.034202

文章网页链接:https://doi.org/10.7567/APEX.9.034202

62.K. H. Chen*, K. C. Chang, T. C. Chang*, T. M. Tsai, S. P. Liang, T. F. Young, Y. E. Syu and S. M. Sze, “Improvement of Bipolar Switching Properties of Gd:SiOx RRAM Devices on Indium Tin Oxide Electrode by Low-Temperature Supercritical CO2 Treatment”. Nanoscale Research Letters, 2016, 11, 52. (IF:5.418)

DOI:10.1186/s11671-016-1272-5

文章网页链接:https://doi.org/10.1186/s11671-016-1272-5

61.C. H. Pan, K. C. Chang, T. C. Chang*, T. M. Tsai, R. Zhang, S. P. Liang, C. Y. Lin, M. C. Chen, P. H. Chen, Y. E. Syu, H. C. Huang and S. M. Sze, “Communication-Effects of Oxygen Concentration Gradient on Resistive Switching Behavior in Oxygen Vacancy-Rich Electrodes”, ECS Journal of Solid State Science and Technology, 2016, 5(5), Q115-Q118. (IF:2.483)

DOI:10.1149/2.0061605jss

文章网页链接:https://doi.org/10.1149/2.0061605jss

2015

60.C. C. Kuo, I. C. Chen, C. C. Shih, K. C. Chang, C. H. Huang, P. H. Chen, T. C. Chang*, T. M. Tsai, J. S. Chang and Huang J.C, “Galvanic Effect of Au-Ag Electrodes for Conductive Bridging Resistive Switching Memory”, IEEE Electron Device Letters, 2015, 36(12), 1321-1324. (IF:4.816)

DOI:10.1109/LED.2015.2496303

文章网页链接:https://doi.org/10.1109/LED.2015.2496303

59.J. Chen, K. C. Chang, T. C. Chang*, T. M. Tsai, C. H. Pan, R. Zhang, J. C. Lou, T. J. Chu, C. H. Wu, M. C. Chen, Y. C. Hung, Y. E. Syu, J. C. Zheng and S. M. Sze, “Nitrogen Buffering Effect on Oxygen in Indium-Tin-Oxide-Capped Resistive Random Access Memory With NH3 Treatment”, IEEE Electron Device Letters, 2015, 36(11), 1138-1141. (IF: 4.816)

DOI:10.1109/LED.2015.2477163

文章网页链接:https://doi.org/10.1109/LED.2015.2477163

58.J. C. Jhu*, T. C. Chang, K. C. Chang, C. Y. Yang, W. C. Chou, C. H. Chou and W. C. Chung, “Investigation of Hydration Reaction-Induced Protons Transport in Etching-Stop a-InGaZnO Thin-Film Transistors”, IEEE Electron Device Letters, 2015, 36(10), 1050-1052. (IF: 4.816)

DOI:10.1109/LED.2015.2466103

文章网页链接:https://doi.org/10.1109/LED.2015.2466103

57.W. Zhang, Y. Hu*, T. C. Chang, K. C. Chang, T. M. Tsai, H. L. Chen, Y. T. Su, T. J. Chu, M. C. Chen, H. C. Huang, W. C. Su, J. C. Zheng, Y. C. Hung and S. M. Sze, “An Electronic Synapse Device Based on Solid Electrolyte Resistive Random Access Memory”, IEEE Electron Device Letters, 2015, 36(8), 772-774. (IF: 4.816)

DOI:10.1109/LED.2015.2448756

文章网页链接:https://doi.org/10.1109/LED.2015.2448756

56.W. Zhang, Y. Hu, T. C. Chang*, T. M. Tsai, K. C. Chang, H. L. Chen, Y. T. Su, R. Zhang, Y. C. Hung, Y. E. Syu, M. C. Chen, J. C. Zheng, H. C. Lin and S. M. Sze, “Mechanism of Triple Ions Effect in GeSO Resistance Random Access Memory”, IEEE Electron Device Letters, 2015, 36(6), 552-554. (IF:4.816)

DOI:10.1109/LED.2015.2424996

文章网页链接:https://doi.org/10.1109/LED.2015.2424996

55.K. C. Chang*, T. M. Tsai, T. C. Chang, R. Zhang, K. H. Chen, J. H. Chen, M. C. Chen, H. C. Huang, W. Zhang, C. Y. Lin, Y. T. Tseng, H. C. Lin, J. C. Zheng and S. M. Sze, “Improvement of Resistive Switching Characteristic in Silicon Oxide-Based RRAM Through Hydride-Oxidation on Indium Tin Oxide Electrode by Supercritical CO2 Fluid”, IEEE Electron Device Letters, 2015, 36(6), 558-560. (IF: 4.816)

DOI:10.1109/LED.2015.2426055

文章网页链接:https://doi.org/10.1109/LED.2015.2426055

54.C. Y. Lin, K. C. Chang, T. C. Chang*, T. M. Tsai, C. H. Pan, R.Zhang, K. H. Liu, H. M. Chen, Y. T. Tseng, Y. C. Hung, Y. E. Syu, J. C. Zheng, Y. L. Wang, W. Zhang and S. M. Sze, “Effects of Varied Negative Stop Voltages on Current Self-Compliance in Indium Tin Oxide Resistance Random Access Memory”, IEEE Electron Device Letters, 2015, 36(6), 564-566. (IF: 4.816)

DOI:10.1109/LED.2015.2424226

文章网页链接:https://doi.org/10.1109/LED.2015.2424226

53.K. H. Chen*, K. C. Chang, T. C. Chang, T. M. Tsai, K. H. Liao, Y. E. Syu and S. M. Sze, “Hopping Conduction Properties of the Sn:SiO(x) Thin-Film Resistance Random Access Memory Devices Induced by Rapid Temperature Annealing Procedure”, Applied Physics A-Materials Science & Processing, 2015, 119(4), 1609-1613. (IF:2.983)

DOI:10.1007/s00339-015-9144-x

文章网页链接:https://doi.org/10.1007/s00339-015-9144-x

52.Y. T. Tseng, T. M. Tsai, T. C. Chang, C. C. Shih, K. C. Chang*, R. Zhang, K. H. Chen, J. H. Chen, Y. C. Li, C. Y. Lin, Y. C. Hung, Y. E. Syu, J. C. Zheng and S. M. Sze, “Complementary resistive switching behavior induced by varying forming current compliance in resistance random access memory”, Applied Physics Letters, 2015, 106(21), 213505. (IF:3.917)

DOI:10.1063/1.4921239

文章网页链接:https://doi.org/10.1063/1.4921239

51.K. C. Chang*, T. C. Chang, T. M. Tsai, R. Zhang, Y. C. Hung, Y. E. Syu, Y. F. Chang, M. C. Chen, T. J. Chu, H. L. Chen, C. H. Pan, C. C. Shih, J. C. Zheng and S. M. Sze, “Physical and chemical mechanisms in oxide-based resistance random access memory”, Nanoscale Research Letters, 2015, 10(1), 1-27. (IF:5.418)

DOI:10.1186/s11671-015-0740-7

文章网页链接:https://doi.org/10.1186/s11671-015-0740-7

50.H. R. Chen, Y. C. Chen*, T. C. Chang, K. C. Chang, T. M. Tsai, T. J. Chu, C. C. Shih, Y. T. Tseng, C. Y. Lin and H. C. Lin, “The Manipulation of Temperature Coefficient Resistance of TaN Thin-Film Resistor by Supercritical CO2 Fluid”, IEEE Electron Device Letters, 2015, 36(3), 271-273. (IF:4.816)

DOI:10.1109/LED.2015.2396196

文章网页链接:https://doi.org/10.1109/LED.2015.2396196

2014

49.T. J. Chu, T. M. Tsai*, T. C. Chang, K. C. Chang, C. H. Pan, K. H. Chen, J. H. Chen, H. L. Chen, H. C. Huang, C. C. Shih, Y. E. Syu, J. C. Zheng and S. M. Sze, “Ultra-high Resistive Switching Mechanism Induced by Oxygen Ion Accumulation on Nitrogen-Doped Resistive Random Access Memory”, Applied Physics Letters, 2014, 105(22), 223514. (IF:3.917)

DOI:10.1063/1.4902503

文章网页链接:https://doi.org/10.1063/1.4902503

48.X. Huang, K. C. Chang, T. C. Chang*, T. M. Tsai, C. C. Shih, R. Zhang, S. Y. Huang, K. H. Chen, J. H. Chen, H. J. Wang, W. J. Chen, F. Y. Zhang, C. Chen and S. M. Sze, “Controllable Set Voltage in bilayer ZnO:SiO2/ZnOx Resistance Random Access Memory by Oxygen Concentration Gradient Manipulation”, IEEE Electron Device Letters, 2014, 35(12), 1227-1229. (IF: 4.816)

DOI:10.1109/LED.2014.2360525

文章网页链接:https://doi.org/10.1109/LED.2014.2360525

47.Y. J. Chen, K. C. Chang, T. C. Chang*, H. L. Chen, T. F. Young, T. M. Tsai, R. Zhang, T. J. Chu, J. F. Ciou, J. C. Lou, K. H. Chen, J. H. Chen, J. C. Zheng and S. M. Sze, “Resistance Switching Induced by Hydrogen and Oxygen in Diamond-Like Carbon Memristor”, IEEE Electron Device Letters, 2014, 35(10), 1016-1018. (IF: 4.816)

DOI:10.1109/LED.2014.2343331

文章网页链接:https://doi.org/10.1109/LED.2014.2343331

46.H. L. Chen, T. C. Chang*, T. F. Young, T. M. Tsai, K. C. Chang, R. Zhang, S. Y. Huang, K. H. Chen, J. C. Lou, M. C. Chen, C. C. Shih, S. Y. Huang and J. H. Chen, “Ultra-Violet Light Enhanced Super Critical Fluid Treatment in In-Ga-Zn-O Thin Film Transistor”, Applied Physics Letters, 2014, 104(24), 243508. (IF: 3.917)

DOI:10.1063/1.4883899

文章网页链接:https://doi.org/10.1063/1.4883899

45.G. W. Chang*, T. C. Chang, J. C. Jhu, T. M. Tsai, K. C. Chang, Y. E. Syu, Y. H. Tai, F. Y. Jian and Y. C. Hung, “Temperature-Dependent Instability of Bias Stress in InGaZnO Thin-Film Transistors”, IEEE Transactions on Electron Devices, 2014, 61(6), 2119-2124. (IF:3.221)

DOI:10.1109/TED.2014.2319105

文章网页链接:https://doi.org/10.1109/TED.2014.2319105

44.R. Zhang, K. C. Chang, T. C. Chang*, T. M. Tsai, S. Y. Huang, W. J. Chen, K. H. Chen, J. C. Lou, J. H. Chen, T. F. Young, M. C. Chen, H. L. Chen, S. P. Liang, Y. E. Syu and S. M. Sze, “Characterization of Oxygen Accumulation in Indium-Tin-Oxide for Resistance Random Access Memory”, IEEE Electron Device Letters, 2014, 35(6), 630-632. (IF:4.816)

DOI:10.1109/LED.2014.2316806

文章网页链接:https://doi.org/10.1109/LED.2014.2316806

43.C. C. Shih, K. C. Chang, T. C. Chang*, T. M. Tsai, R. Zhang, J. H. Chen, K. H. Chen, T. F. Young, H. L. Chen, J. C. Lou, T. J. Chu, S. Y. Huang, D. H. Bao and S. M. Sze, “Resistive Switching Modification by Ultraviolet Illumination in Transparent Electrode Resistive Random Access Memory”, IEEE Electron Device Letters, 2014, 35(6), 633-635. (IF: 4.816)

DOI:10.1109/LED.2014.2316673

文章网页链接:https://doi.org/10.1109/LED.2014.2316673

42.K. C. Chang*, T. M. Tsai, T. C. Chang, K. H. Chen, R. Zhang, Z. Y. Wang, J. H. Chen, T. F. Young, M. C. Chen, T. J. Chu, S. Y. Huang, Y. E. Syu, D. H. Bao and S. M. Sze, “Dual Ion Effect of The Lithium Silicate Resistance Random Access Memory”, IEEE Electron Device Letters, 2014, 35(5), 530-532. (IF: 4.816)

DOI:10.1109/LED.2014.2311295

文章网页链接:https://doi.org/10.1109/LED.2014.2311295

41.H. R. Chen, Y. C. Chen*, T. C. Chang, K. C. Chang, T. M. Tsai, T. J. Chu, C. C. Shih, N. C. Chuang and K. Y. Wang, “Surface Scattering Mechanisms of Tantalum Nitride Thin Film Resistor”, Nanoscale Research Letters, 2014, 9(1), 1-5. (IF:5.418)

DOI:10.1186/1556-276X-9-177

文章网页链接:https://doi.org/10.1186/1556-276X-9-177

40.K. H. Liu, T. C. Chang*, K. C. Chang, T. M. Tsai, T. Y. Hsieh, M. C. Chen, B. L. Yeh and W. C. Chou, “Investigation of On-Current Degradation Behavior Induced by Surface Hydrolysis Effect Under Negative Gate Bias Stress in Amorphous InGaZnO Thin-Film Transistors”, Applied Physics Letters, 2014, 104(10), 103501. (IF:3.917)

DOI:10.1063/1.4863682

文章网页链接:https://doi.org/10.1063/1.4863682

39.C. Ye, C. Zhang, T. M. Tsai, K. C. Chang, M. C. Chen, T. C. Chang, T. F. Deng and H. Wang*, “Low-Power Bipolar Resistive Switching TiN/HfO2/ITO Memory with Self-Compliance Current Phenomenon”, Applied Physics Express, 2014, 7(3), 034101. (IF:2.819)

DOI:10.7567/APEX.7.034101

文章网页链接:https://doi.org/10.7567/APEX.7.034101

38.L. Ji, Y. F. Chang*, B. Fowler, Y. C. Chen, T. M. Tsai, K. C. Chang, M. C. Chen, T. C. Chang, S. M. Sze, E. T. Yu and J. C. Lee, “Integrated One Diode-One Resistor Architecture in Nanopillar SiOx Resistive Switching Memory by Nanosphere Lithography”, Nano Letters, 2014, 14(2), 813-818. (IF:12.262)

DOI:10.1021/nl404160u

文章网页链接:https://doi.org/10.1021/nl404160u

37.T. J. Chu*, T. M. Tsai, T. C. Chang, K. C. Chang, R. Zhang, K.H. Chen, J. H. Chen, T. F. Young, J. W. Huang, J. C. Lou, M. C. Chen, S. Y. Huang, H. L. Chen, Y. E. Syu, D. H. Bao and S. M. Sze, “Tri-Resistive Switching Behavior of Hydrogen Induced Resistance Random Access Memory”, IEEE Electron Device Letters, 2014, 35(2), 217-219. (IF:4.816)

DOI:10.1109/LED.2013.2295378

文章网页链接:https://doi.org/10.1109/LED.2013.2295378

36.Y. J. Chen, H. L. Chen, T. F. Young*, T. C. Chang, T. M. Tsai, K. C. Chang, R. Zhang, K. H. Chen, J. C. Lou, T. J. Chu, J. H. Chen, D. H. Bao and S. M. Sze, “Hydrogen Induced Redox Mechanism in Amorphous Carbon Resistive Random Access Memory”, Nanoscale Research Letters, 2014, 9(1), 1-5. (IF:5.418)

DOI:10.1186/1556-276X-9-52

文章网页链接:https://doi.org/10.1186/1556-276X-9-52

2013

35.R. Zhang, T. M. Tsai*, T. C. Chang, K. C. Chang, K. H. Chen, J. C. Lou, T. F. Young, J. H. Chen, S. Y. Huang, M. C. Chen, C. C. Shih, H. L. Chen, J. H. Pan, C. W. Tung, Y. E. Syu and S. M. Sze, “Mechanism of Power Consumption Inhibitive Multi-layer Zn:SiO2/SiO2 Structure Resistance Random Access Memory”, Journal of Applied Physics, 2013, 114(23), 234501. (IF:2.877)

DOI:10.1063/1.4843695

文章网页链接:https://doi.org/10.1063/1.4843695

34.K. C. Chang, J. W. Huang*, T. C. Chang, T. M. Tsai, K. H. Chen, T. F. Young, J. H. Chen, R. Zhang, J. C. Lou, S. Y. Huang, Y. C. Pan, H. C. Huang, Y. E. Syu, D. S. Gan, D. H. Bao and S. M. Sze, “Space Electric Field Concentrated Effect for Zr:SiO2 RRAM Devices Using Porous SiO2 Buffer Layer”, Nanoscale Research Letters, 2013, 8(1), 1-5. (IF: 5.418)

DOI:10.1186/1556-276X-8-523

文章网页链接:https://doi.org/10.1186/1556-276X-8-523

33.R. Zhang, K. C. Chang, T. C. Chang*, T. M. Tsai, K. H. Chen, J. C. Lou, J. H. Chen, T. F. Young, C. C. Shih, Y. L. Yang, Y. C. Pan, T. J. Chu, S. Y. Huang, C. H. Pan, Y. T. Su, Y. E. Syu and S. M. Sze, “High Performance of Graphene Oxide-Doped Silicon Oxide-based Resistance Random Access Memory”, Nanoscale Research Letters, 2013, 8(1), 1-6. (IF: 5.418)

DOI:10.1186/1556-276X-8-523

文章网页链接:https://doi.org/10.1186/1556-276X-8-523

32.Y. T. Su*, K. C. Chang, T. C. Chang, T. M. Tsai, R. Zhang, J. C. Lou, J. H. Chen, T. F. Young, K. H. Chen, B. H. Tseng, C. C. Shih, Y. L. Yang, M. C. Chen, T. J. Chu, C. H. Pan, Y. E. Syu and S. M. Sze, “Characteristics of Hafnium Oxide Resistance Random Access Memory with Different Setting Compliance Current”, Applied Physics Letters, 2013, 103(16), 163502. (IF:3.917)

DOI:10.1063/1.4825104

文章网页链接:https://doi.org/10.1063/1.4825104

31.G. W. Chang, T. C. Chang*, J. C. Jhu, T. M. Tsai, Y. E. Syu, K. C. Chang, F. Y. Jian, Y. C. Hung and Y. H. Tai, “N2O Plasma Treatment Suppressed Temperature-dependent Sub-threshold Leakage Current of Amorphous Indium-gallium-zinc-oxide Thin Film Transistors”, Surface & Coatings Technology, 2013, 231, 281-284. (IF:3.754)

DOI:10.1016/j.surfcoat.2012.04.086

文章网页链接:https://doi.org/10.1016/j.surfcoat.2012.04.086

30.K. C. Chang, T. M. Tsai*, R. Zhang, T. C. Chang, K. H. Chen, J. H. Chen, T. F. Young, J. C. Lou, T. J. Chu, C. C. Shih, J. H. Pan, Y. T. Su, Y. E. Syu, C. W. Tung, M. C. Chen, J. J. Wu, Y. Hu and S. M. Sze, “Electrical Conduction Mechanism of Zn:SiOx Resistance Random Access Memory with Supercritical CO2 Fluid Process”, Applied Physics Letters, 2013, 103(8), 083509. (IF:3.917)

DOI:10.1063/1.4819162

文章网页链接:https://doi.org/10.1063/1.4819162

29.Y. L. Yang*, T. F. Young, T. C. Chang, J. H. Hsu, T. M. Tsai, F. Y. Jian and K. C. Chang, “Mechanical Stress Influence on Electronic Transport in Low-kappa SiOC Dielectric Dual Damascene Capacitor”, IEEE Electron Device Letters, 2013, 34(8), 1056-1058. (IF:4.816)

DOI:10.1109/LED.2013.2269831

文章网页链接:https://doi.org/10.1109/LED.2013.2269831

28.Y. E. Syu*, R. Zhang, T. C. Chang, T. M. Tsai, K. C. Chang, J. C. Lou, T. F. Young, J. H. Chen, M. C. Chen, Y. L. Yang, C. C. Shih, T. J. Chu, J. Y. Chen, C. H. Pan, Y. T. Su, H. C. Huang, D. S. Gan and S. M. Sze, “Endurance Improvement Technology With Nitrogen Implanted in the Interface of WSiOx Resistance Switching Device”, IEEE Electron Device Letters, 2013, 34(7), 864-866. (IF: 4.816)

DOI:10.1109/LED.2013.2260125

文章网页链接:https://doi.org/10.1109/LED.2013.2260125

27.T. M. Tsai*, K. C. Chang, R. Zhang, T. C. Chang, J. C. Lou, J. H. Chen, T. F. Young, B. H. Tseng, C. C. Shih, Y. C. Pan, M. C. Chen, J. H. Pan, Y. E. Syu and S. M. Sze, “Performance and Characteristics of Double Layer Porous Silicon Oxide Resistance Random Access Memory”, Applied Physics Letters, 2013, 102(25), 253509. (IF: 3.917)

DOI:10.1063/1.4812474

文章网页链接:https://doi.org/10.1063/1.4812474

26.J. W. Huang*, R. Zhang, T. C. Chang, T. M. Tsai, K. C. Chang, J. C. Lou, T. F. Young, J. H. Chen, H. L. Chen, Y. C. Pan, X. Huang, F. Y. Zhang, Y. E. Syu and S. M. Sze, “The Effect of High/Low Permittivity in Bilayer HfO2/BN Resistance Random Access Memory”, Applied Physics Letters, 2013, 102(20), 203507. (IF: 3.917)

DOI:10.1063/1.4807577

文章网页链接:https://doi.org/10.1063/1.4807577

25.Y. L. Yang*, T. F. Young, T. C. Chang, F. Y. Shen, J. H. Hsu, T. M. Tsai, K. C. Chang and H. L. Chen, “Mechanical Stress Influence on Electronic Transport in Low-k SiOC Dielectric Single Damascene Capacitor”, Applied Physics Letters, 2013, 102(19), 192912. (IF: 3.971)

DOI:10.1063/1.4807010

文章网页链接:https://doi.org/10.1063/1.4807010

24.K. C. Chang*, C. H. Pan, T. C. Chang, T. M. Tsai, R. Zhang, J. C. Lou, T. F. Young, J. H. Chen, C. C. Shih and T. J. Chu, “Hopping Effect of Hydrogen-Doped Silicon Oxide Insert RRAM by Supercritical CO2 Fluid Treatment”, IEEE Electron Device Letters, 2013, 34(5), 617-619. (IF:4.816)

DOI:10.1109/LED.2013.2251995

文章网页链接:https://doi.org/10.1109/LED.2013.2251995

23.K. C. Chang*, R. Zhang, T. C. Chang, T. M. Tsai, J. C. Lou, J. H. Chen, T. F. Young, M. C. Chen, Y. L. Yang and Y. C. Pan, “Origin of Hopping Conduction in Graphene-Oxide-Doped Silicon Oxide Resistance Random Access Memory Devices”, IEEE Electron Device Letters, 2013, 34(5), 677-679. (IF:4.816)

DOI:10.1109/LED.2013.2250899

文章网页链接:https://doi.org/10.1109/LED.2013.2250899

22.Y. E. Syu*, T. C. Chang, J. H. Lou, T. M. Tsai, K. C. Chang, M. J. Tsai, Y. L. Wang, M. Liu and S. M. Sze, “Atomic-level quantized reaction of HfOx memristor”, Applied Physics Letters, 2013, 102(17). (IF: 3.971)

DOI:10.1063/1.4802821

文章网页链接:https://doi.org/10.1063/1.4802821

21.K. H. Chen*, R. Zhang, T. C. Chang, T. M. Tsai, K. C. Chang, J. C. Lou, T. F. Young, J. H. Chen, C. C. Shih and C. W. Tung, “Hopping Conduction Distance Dependent Activation Energy Characteristics of Zn:SiO2 Resistance Random Access Memory Devices”, Applied Physics Letters, 2013, 102(13), 133503. (IF: 3.971)

DOI:10.1063/1.4799655

文章网页链接:https://doi.org/10.1063/1.4799655

20.T. J. Chu*, T. C. Chang, T. M. Tsai, H. H. Wu, J. H. Chen, K. C. Chang, T. F. Young, K. H. Chen, Y. E. Syu and G. W. Chang, “Charge Quantity Influence on Resistance Switching Characteristic During Forming Process”, IEEE Electron Device Letters, 2013, 34 (4), 502-504. (IF: 4.816)

DOI:10.1109/LED.2013.2242843

文章网页链接:https://doi.org/10.1109/LED.2013.2242843

19.K. C. Chang*, T. M. Tsai, T. C. Chang, H. H. Wu, K. H. Chen, J. H. Chen, T. F. Young, T. J. Chu, J. Y. Chen and C. H. Pan, “Low Temperature Improvement Method on Zn:SiOx Resistive Random Access Memory Devices”, IEEE Electron Device Letters, 2013, 34 (4), 511-513. (IF: 4.816)

DOI:10.1109/LED.2013.2248075

文章网页链接:https://doi.org/10.1109/LED.2013.2248075

18.K. C. Chang*, T. M. Tsai, T. C. Chang, H. H. Wu, J. H. Chen, Y. E. Syu, G.W. Chang, T. J. Chu, G. R. Liu and Y. T. Su, “Characteristics and Mechanisms of Silicon-Oxide-Based Resistance Random Access Memory”, IEEE Electron Device Letters, 2013, 34 (3), 399-401. (IF:4.816)

DOI:10.1109/LED.2013.2241725

文章网页链接:https://doi.org/10.1109/LED.2013.2241725

17.M. C. Chen, T. C. Chang*, Y. C. Chiu, S. C. Chen, S. Y. Huang, K. C. Chang, T. M. Tsai, K. H. Yang, S. M. Sze and M. J. Tsai, “The Resistive Switching Characteristics in TaON Films for Nonvolatile Memory Applications”, Thin Solid Films, 2013, 528, 224–228. (IF:2.358)

DOI:10.1016/j.tsf.2012.09.081

文章网页链接:https://doi.org/10.1016/j.tsf.2012.09.081

2012

16.T. M. Tsai*, K. C. Chang, T. C. Chang, G. W. Chang, Y. E. Syu, Y. T. Su, G. R. Liu, K. H. Liao, M. C. Chen, H. C. Huang, Y. H. Tai, D. S. Gan, C. Ye, H. Wang and S. M. Sze, “Origin of Hopping Conduction in Sn-Doped Silicon Oxide RRAM With Supercritical CO2 Fluid Treatment”, IEEE Electron Device Letters, 2012, 33(12), 1693-1695. (IF:4.816)

DOI:10.1109/LED.2012.2217932

文章网页链接:https://doi.org/10.1109/LED.2012.2217932

15.T. M. Tsai*, K. C. Chang, T. C. Chang, Y. E. Syu, S. L. Chuang, G. W. Chang, G. R. Liu, M. C. Chen, H. C. Huang, S. K. Liu, Y. H. Tai, D. S. Gan, Y. L. Yang, T. F. Young, B. H. Tseng, K. H. Chen, M. J. Tsai, C. Ye, H. Wang and S. M. Sze, “Bipolar Resistive RAM Characteristics Induced by Nickel Incorporated into Silicon Oxide Dielectrics for IC Applications”, IEEE Electron Device Letters, 2012, 33(12), 1696-1698. (IF:4.816)

DOI:10.1109/LED.2012.2217933

文章网页链接:https://doi.org/10.1109/LED.2012.2217933

14.T. M. Tsai*, K. C. Chang, T. C. Chang, Y. E. Syu, K. H. Liao, B. H. Tseng and S. M. Sze, “Dehydroxyl Effect of Sn-doped Silicon Oxide Resistance Random Access Memory with Supercritical CO2 Fluid Treatment”, Applied Physics Letters, 2012, 101(11), 112906. (IF:3.971)

DOI:10.1063/1.4750235

文章网页链接:https://doi.org/10.1063/1.4750235

13.G. W. Chang*, T. C. Chang, J. C. Jhu, T. M. Tsai, Y. E. Syu, K. C. Chang, Y. H. Tai, F. Y. Jian and Y. C. Hung, “Suppress Temperature Instability of InGaZnO Thin Film Transistors by N2O Plasma Treatment, including Thermal-induced Hole Trapping Phenomenon under Gate Bias Stress”, Applied Physics Letters, 2012, 100(18), 182103. (IF:3.971)

DOI:10.1063/1.4709417

文章网页链接:https://doi.org/10.1063/1.4709417

12.G. W. Chang*, T. C. Chang, J. C. Jhu, T. M. Tsai, Y. E. Syu, K. C. Chang, Y. H. Tai, F. Y. Jian and Y. C. Hung, “Abnormal Subthreshold Leakage Current at High Temperature in InGaZnO Thin-Film Transistors”, IEEE Electron Device Letters, 2012, 33(4), 540-542. (IF:4.816)

DOI:10.1109/LED.2012.2182754

文章网页链接:https://doi.org/10.1109/LED.2012.2182754

11.Y. E. Syu*, T. C. Chang, T. M. Tsai, G. W. Chang, K. C. Chang, J. H. Lou, Y. H. Tai, M. J. Tsai, Y. L. Wang and S. M. Sze, “Asymmetric Carrier Conduction Mechanism by Tip Electric Field in WSiOX Resistance Switching Device”, IEEE Electron Device Letters, 2012, 33(3), 342-344. (IF:4.816)

DOI:10.1109/LED.2011.2182600

文章网页链接:https://doi.org/10.1109/LED.2011.2182600

10.Y. E. Syu*, T. C. Chang, T. M. Tsai, G. W. Chang, K. C. Chang, Y. H. Tai, M. J. Tsai, Y. L. Wang and S. M. Sze, “Silicon introduced effect on resistive switching characteristics of WOX thin films”, Applied Physics Letters, 2012, 100(2), 022904. (IF:3.971)

DOI:10.1063/1.3676194

文章网页链接:https://doi.org/10.1063/1.3676194

9.K. C. Chang*, T. M. Tsai, T. C. Chang, Y. E. Syu, K. H. Liao, S. L. Chuang, C. H. Li, D. S. Gan and S. M. Sze, “The Effect of Silicon Oxide Based RRAM with Tin Doping (vol 15, pg H65, 2012)”, ESC Solid State Letters, 2012, 1(2), X1-X1. (IF:1.184)

DOI:10.1149/2.022202ssl

文章网页链接:https://doi.org/10.1149/2.022202ssl

8.K. C. Chang*, T. M. Tsai, T. C. Chang, Y. E. Syu, S. L. Chuang, C. H. Li, D. S. Gan and S. M. Sze, “The Effect of Silicon Oxide Based RRAM with Tin Doping”, Electrochemical and Solid State Letters, 2012, 15(3), H65-H68. (IF:2.321)

DOI:10.1149/2.022202ssl

文章网页链接:https://doi.org/10.1149/2.022202ssl

2011

7.G. W. Chang, T. C. Chang*, Y. E. Syu, T. M. Tsai, K. C. Chang, C. H. Tu, F. Y. Jian, Y. C. Hung and Y. H. Tai, “Paraffin Wax Passivation Layer Improvements in Electrical Characteristics of Bottom Gate Amorphous Indium-gallium-zinc oxide Thin-film Transistors”, Thin Solid Films, 2011, 520(5), 1608-1611. (IF:2.358)

DOI:10.1016/j.tsf.2011.08.104

文章网页链接:https://doi.org/10.1016/j.tsf.2011.08.104

6.K. C. Chang*, T. M. Tsai, T. C. Chang, Y. E. Syu, C. C. Wang, S. L. Chuang, C. H. Li, D. S. Gan and S. M. Sze, “Reducing Operation Current of Ni-doped Silicon Oxide Resistance Random Access Memory by Supercritical CO2 Fluid Treatment”, Applied Physics Letters, 2011, 99(26), 263501. (IF:3.971)

DOI:10.1063/1.3671991

文章网页链接:https://doi.org/10.1063/1.3671991

5.Y. E. Syu*, T. C. Chang, T. M. Tsai, Y. C. Hung, K. C. Chang, M. J. Tsai, M. J. Kao and S. M. Sze, “Redox Reaction Switching Mechanism in RRAM Device With Pt/CoSiOX/TiN Structure”, IEEE Electron Device Letters, 2011, 32(4), 545-547. (IF:4.816)

DOI:10.1109/LED.2011.2104936

文章网页链接:https://doi.org/10.1109/LED.2011.2104936

4.Y. E. Syu*, T. C. Chang, C. T. Tsai, G. W. Chang, T. M. Tsai, K. C. Chang, Y. H. Tai, M. J. Tsai and S. M. Sze, “Improving Resistance Switching Characteristics with SiGeOx/SiGeON Double Layer for Nonvolatile Memory Applications”, Electrochemical and Solid State Letters, 2011, 14(10), H419-H421. (IF:2.321)

DOI:10.1149/1.3615823

文章网页链接:https://doi.org/10.1149/1.3615823

3.K. C. Chang*, T. M. Tsai, T. C. Chang, Y. E. Syu, H. C. Huang, Y. C. Hung, T. F. Young, D. S. Gan and N. J. Ho, “Low-Temperature Synthesis of ZnO Nanotubes by Supercritical CO2 Fluid Treatment”, Electrochemical and Solid State Letters, 2011, 14(9), K47-K50. (IF:2.321)

DOI:10.1149/1.3599420

文章网页链接:https://doi.org/10.1149/1.3599420

2009

2.M. C. Chen, T. C. Chang*, S. Y. Huang, K. C. Chang, H. C. Huang, S. C. Chen, J. Lu, D. S. Gan, N. J. Ho, T. F. Young, G. W. Jhang and Y. H. Tai, “Improvement of the performance of ZnO TFTs by low-temperature supercritical fluid technology treatment”, Surface & Coatings Technology, 2009, 204(6-7), 1112-1115. (IF:4.865)

DOI:10.1016/j.surfcoat.2009.09.050

文章网页链接:https://doi.org/10.1016/j.surfcoat.2009.09.050

1.M. C. Chen*, T. C. Chang, S. Y. Huang, K. C. Chang, H. W. Li, S. C. Chen, J. Lu and Y. Shi, “A low-temperature Method for Improving the Performance of Sputter-deposited ZnO Thin-film Transistors with Supercritical Fluid”, Applied Physics Letters, 2009, 94(16), 162111. (IF:3.971)

DOI:10.1063/1.3124658

文章网页链接:https://doi.org/10.1063/1.3124658

 

Conference

2021

17.H. C. Chin, L. Hu, K. C. Chang* and X. Lin*, “Supercritical Fluid of Amorphous-silicon Flexible Thin-film Transistors”, 2021 9th International Symposium on Next Generation Electronics (ISNE) (pp. 1-3)

16.Y. Zheng, K. C. Chang* and L. Li, “An Effective Method for Improving the Insulating Property of Polyvinyl Alcohol in Device with Supercritical Fluids”, 2021 9th International Symposium on Next Generation Electronics (ISNE) (pp. 1-4).

15.Y. Hu, K. C. Chang*, L. Li and Z. Wang, “Interfacial Modification of Thin Film Transistor via Supercritical Fluids Treatment and Mechanism Exploration”, 2021 9th International Symposium on Next Generation Electronics (ISNE) (pp. 1-4).

2020

14.B. L. Liu, H. C. Chin, H. Lou, K. C. Chang* and X. Lin*, “Charge Plasma-Based Junctionless FinFET for The Immune of Fin Sidewall Angle Variation”, 2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT) (pp. 1-3).

13.J. Wu, H. Fu, Y. Zheng, K. C. Chang, S. Zhang, H. Y. Fu & Q. Li*, “Precise tuning of epsilon-near-zero properties in indium tin oxide nanolayer by supercritical carbon dioxide”, Conference on Lasers and Electro-Optics/Pacific Rim (CLEO-PR). 2020

12.K. Liu, H. C. Chin, H. Lou, K. C. Chang and X. Lin*, “Variation Investigation of Junction-less Transistor with Side-wall Charge-plasma Structure Induced by Line Edge Roughness”, 2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT) (pp. 1-3).

11.X. Zhang, R. Niu, Z. Huang, T. Dai, K. C. Chang* and X. Lin*, “A Study on the Threshold Voltage Shift under Gate-pulse Stress in D-mode GaN MIS-HEMTs”, 2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT) (pp. 1-3).

10.Z. Wang, Y. Hu, Q. Lin, L. Li and K. C. Chang*, “Performance Improvement of a‐IGZO Thin‐Film Transistor By Using Ta2O5/SiO2 Double‐layer Gate Dielectric” In SID Symposium Digest of Technical Papers (Vol. 52, pp. 440-442). 2020

2019

9.M. H. Liu, K. C. Chang, X. N. Lin*, L. Li and Y. F. Jin*, “Positive Shift Suppression in Threshold Voltage of AlGaN/GaN MIS-HEMTs”, 2019 8th International Symposium on Next Generation Electronics, 2019.

DOI:10.1109/ISNE.2019.8896561

文章网页链接:https://doi.org/10.1109/ISNE.2019.8896561

2017

8.M. Yuan, W. Luo, X. T. Xu, K. C. Chang, T. C. Chang, C. Liu and H. Zhou*, “Organometal Tri-halide Perovskite Resistive Switching Device with PMMA Electrode Interlayer”, IEEE International Conference on Electron and Solid-State Circuits, 2017.

DOI:10.1109/EDSSC.2017.8126466

文章网页链接:https://doi.org/10.1109/EDSSC.2017.8126466

7.C. Y. Lin, Y. C. Chen, M. Q. Gu, C. H. Pan, F. Y. Jin, Y. T. Tseng, C. C. Hsieh, X. H. Wu, M. C. Chen, Y. F. Chang*, F. Zhou, B. Fowler, K. C. Chang, T. M. Tsai, T. C. Chang, Y. G. Zhao, S. M. Sze, S. Banetjee and J. C Lee, “A Universal Model for Interface-Type Threshold Switching Phenomena by Comprehensive Study of Vanadium Oxide-Based Selector”, 2017 International Symposium on VLASI Technology, Systems and Application (VLSI-TSA), 2017.

DOI:10.1109/VLSI-TSA.2017.7942474

文章网页链接:https://doi.org/10.1109/VLSI-TSA.2017.7942474

2016

6.Y. C. Chen, Y. F. Chang*, B. Fowler, F. Zhou, X. H. Wu, C. C. Hsieh, H. L. Chang, C. H. Pan, M. C. Chen, K. C. Chang, T. M. Tsai, T. C. Chang and J. C. Lee, “Comprehensive Study of Intrinsic Unipolar SiOx-Based ReRAM Characteristics in AC Frequency Response and Low Voltage (< 2V) Operation”, 2016 International Symposium on VLSI Technology, Systems and Application(VLSI-TSA).

2015

5.J. Chen, J. C. Lou, K. C. Chang, T. C. Chang, T. M. Tsai, C. H. Pan, “Influence of Nitrogen Buffering on Oxygen in Indium-Tin-Oxide Capped Resistive Random Access Memory with NH3 Treatment”, 2015 IEEE 11th International Conference on ASIC (ASICON).

DOI:10.1109/ASICON.2015.7516973

文章网页链接:https://doi.org/10.1109/ASICON.2015.7516973

2014

4.K. C. Chang, R. Zhang, T. C. Chang, T. M. Tsai, T. J. Chu, H. L. Chen, C. C. Shih, C. H. Pan, Y. T. Su, P. J. Wu and Sze S.M, “High Performance, Excellent Reliability Multifunctional Graphene Oxide Doped Memristor Achieved by Self-Protective Compliance Current Structure”, 2014 IEEE International Electron Devices Meeting (IEDM).

3.J. Li*, Y. F. Chang, B. Fowler, Y. C. Chen, T. M. Tsai, K. C. Chang, M. C. Chen, T. C. Chang, S. M. Sze, E. T. Yu and J. C. Lee, “Resistive Switching of SiOx with One Diode-One Resistor Nanopillar Architecture Fabricated Via Nanosphere Lithography”, 2014 72nd Annual Device Research Conference (DRC).

2013

2.M. C. Chen*, T. C. Chang, Y. C. Chiu, S. C. Chen, S. Y. Huang, Y. E. Syu, K. C. Chang, H. C. Huang, T. M. Tsai, D. S. Gan and IEEE, “Effect of Electrode Material on Resistive Switching Characteristics in TaON Nonvolatile Memory Devices”, Symposium on General Student Poster Session held during the 223rd Meeting of the Electrochemical-Society (ECS), 2013

DOI:10.1149/05329.0001ecst

文章网页链接:https://doi.org/10.1149/05329.0001ecst

2012

1.J. C. Jhu*, T. C. Chang, G. W. Chang, T. M. Tsai, Y. E. Syu, F. Y. Jian, K. C. Chang and Y. H. Tai, “N2O Plasma Treatment Suppressed Temperature-dependent Point Defects Formation with Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors”, Symposium on Thermal and Plasma CVD of Nanostructures and Their Applications held during the 221st Meeting of the Electrochemical-Society (ECS), 2012

DOI:10.1149/04531.0047ecst

文章网页链接:https://doi.org/10.1149/04531.0047ecst