薄膜晶体管与先进显示重点实验室
Thin Film Transistor and Advanced Display Lab

期刊论文

专著

《三维结构MOS晶体管技术研究》 高等教育出版社  2005

 

2022年期刊论文

  • Xuebin Chen, Tianqi Lai, Ting Shi, Xiaobin Peng and Shengdong Zhang, “Porphyrin-Based All-Small-Molecule Organic Solar Cells With Absorption-Complementary Nonfullerene Acceptor,”IEEE Journal of Photovoltaics,12, no.1, pp. 316-321, 2022.
  • Fayang Liu, Yuheng Zhou, Huan Yang, Xiaoliang Zhou, Xiaohui Zhang, Guijun Li, Meng Zhang, Shengdong Zhang, Lei Lu,“Roles of Hot Carriers in Dynamic Self-Heating Degradation of a-InGaZnO Thin-Film Transistors,” IEEE Electron Device Letters, 43, no.1, pp.40-43, 2022.
  • Hing-Mo Lam, Silin Lu, Hezi Qiu, Min Zhang, Hailong Jiao, Shengdong Zhang, “A High-Efficiency Segmented Reconfigurable Cyclic Shifter for 5G QC-LDPC Decoder,” IEEE Transactions on Circuits and Systems i-Regular Papers, 69, no. 1, pp. 401-414, 2022.
  • Wengao Pan, Xiaoliang Zhou, Qingping Lin, Jie Chen, Lei Lu and Shengdong Zhang, “Low Temperature and High-performance ZnSnO Thin-Film Transistors Engineered by in Situ Thermal Manipulation,” Journal of Materials Chemistry C, 10, no 8,pp. 3129-3138, 2022.
  • Jiaona Zhang, Min Zhang, Kuan-Chang Chang, Zhao Rong, Yuqing Zhang, ShengdongZhang, and Mansun Chan, “Analysis of Carrier Behavior for Amorphous Indium Gallium Zinc Oxide After Supercritical Carbon Dioxide Treatment,” Advanced Materials Interfaces, vol. 9, no. 14, 2022.
  • Hezi Qiu, Junjun An, Kun Wang, Congwei Liao, Chao Dai, Xin Zhang, Shengdong Zhang, “A Low Power and IR Drop Compensable AMOLED Pixel Circuit Based on Lowerature Poly-Si and Oxide (LTPO) TFTs Hybrid Technology,”IEEE Journal of the Electron Devices Society, 10, pp. 51-58, 2022.
  • Hongyu He, Yuan Liu, Yuyu Tan, Xinlin Wang, Xinnan Lin,Shengdong Zhang, “Surface-Potential-Based Drain Current Model for Two-Dimensional Organic TFTs using the Multiple Trapping and Release Conduction Theory,” Solid-State Electronics, vol.187, 2022.
  • Jiye Li, Yuqing Zhang, Jialiang Wang, Huan Yang, Xiaoliang Zhou, Mansun Chan, Xinwei Wang, Lei Lu, Shengdong Zhang, “High-Performance Self-Aligned Top-Gate Amorphous InGaZnO TFTs With 4 nm-Thick Atomic-Layer-Deposited AlOxInsulator,”IEEE Electron Device Letters, vol. 43, no. 5, pp.729-732, 2022.
  • Xiaoliang Zhou, Yunkai Cao, Jiye Li, Huan Yang, Wengao Pan, Lei Lu, Shengdong Zhang, “Reactively-sputtered AlOx Passivation Layer for Self-Aligned Top-Gate Amorphous InGaZnO Thin-Film Transistors,”Materials Science in Semiconductor Processing, vol.148, 2022.
  • Jiye Li, Hao Peng, Huan Yang, Xiaoliang Zhou , Lei Lu, Shengdong Zhang, “Abnormal Bias Instabilities Induced by Lateral H2O Diffusion Into Top-Gate Insulator of a-InGaZnO Thin-Film Transistors,”IEEE Journal of The Electron Devices Society, vol.10, pp.341-345, 2022.
  • Changyuan Chen, Sikai Su, Shengdong Zhang, Shuming Chen, “Al Reaction-Induced Conductive a-InGaZnO as Pixel Electrode for Active-Matrix Quantum-Dot LED Display,”IEEE Electron Device Letters, vol.43, no.5, pp. 749-752, 2022.
  • Pengfei Wang, Yunfei Liu, Zhihe Xia, Yunping Wang, Xiaoliang Zhou, Runxiao Shi,Fion Sze Yan Yeung, Man Wong, Hoi Sing Kwok, Shengdong Zhang, Lei Lu, “Self-Compensation Effect of Photo-Bias Instabilities in a-InGaZnO Thin-Film Transistors Induced by Unique Ion Migration,” IEEE Transactions On Electron Devices,69, no. 6, pp. 3206-3212, 2022.
  • Xin Zheng, Congwei Liao, Shuang Jin, Jiangbo Yao, Limei Zeng, Xin Zhang, Shengdong Zhang, “Emit Signals Reused Gate Driver Design for Ultra-Narrow-Bezel Micro-LED Display Based on Metal-Oxide TFTs，”SID Symposium Digest of Technical Papers， 53, Issue 1 pp.1074-1077, 2022.
  • Jia Fu, Congwei Liao, Hezi Qiu, Shuang Jin, Jiangbo Yao, Limei Zeng, Xin Zhang, Shengdong Zhang, “Two-Mode PWM Driven Micro-LED Displays with Dual-Gate Metal-Oxide TFTs,” SID Symposium Digest of Technical Papers, vol.53, Issue 1, 1116-1119, 2022.
  • Jie Chen, Xiaoliang Zhou, Fanyou Tang, Tengyan Huang, Hao Liu, Lei Lu, Shengdong Zhang, “Exponential Dependence of Photocurrent on Reciprocal of Channel Length in Amorphous InZnO Thin-Film Transistors with Short Channel,”SID Symposium Digest of Technical Papers， 53, Issue 1，pp.1081-1084, 2022.
  • Yuheng Zhou, Fayang Liu, Huan Yang, Xiaoliang Zhou, Guijun Li, Meng Zhang, Rongsheng Chen, Shengdong Zhang, Lei Lu, “Competition Between Heating and Cooling During Dynamic Self-Heating Degradation of Amorphous InGaZnO Thin-Film Transistors,” Solid State Electronics, vol. 195, 2022.
  • Jitong Zhou, Wengao Pan, Dawei Zheng, Fayang Liu, Guijun Li, Xianda Zhou, Kai Wang, Shengdong Zhang, Lei Lu, “Self-Stabilized Hydrogenation of Amorphous InGaZnO Schottky Diode with Bilayer Passivation,” Advanced Electronic Materials, vol. 8, no.10,
  • Yunping Wang , Yuheng Zhou, Zhihe Xia, Wei Zhou, Meng Zhang, Fion Sze Yan Yeung , Man Wong ,Hoi Sing Kwok , Shengdong Zhang and Lei Lu, “Compact Integration of Hydrogen–Resistant a–InGaZnO and Poly–Si Thin–Film Transistors,” Micromachines, vol.13, no.6, 2022.
  • Yiming Zhang, Dexing Liu, Qiuyue Huang, Qinqi Ren, Lingchong Fan, Chunhui Du, Shengdong Zhang, Min Zhang, “Mixed-Dimensional van der Waals Engineering for Charge Transfer Enables Wafer-Level Flexible Electronics,” Advanced Functional Materials, vol.32, no.36, 2022.
  • Qiuyue Huang , Jialiang Wang , Chenglin Li, Jiahao Zhu, Wanting Wang, Youchao Huang, Yiming Zhang, Hailong Jiao,Shengdong Zhang, Hong Meng, Min Zhang and Xinwei Wang, “Intrinsically Flexible All-Carbon-Nanotube Electronics Enabled by A Hybrid Organic–Inorganic Gate Dielectric,”NPJ Flexible Electronics, vol.6, no.1, 2022.
  • Hao Liu, Xiaoliang Zhou,Changhui Fan, Jie Chen, Lei Lu, Hang Zhou and Shengdong Zhang, “Thorough Elimination of Persistent Photoconduction in Amorphous InZnO Thin-Film Transistor via Dual-Gate Pulses,” IEEE Electron Device Letters, vol. 43, no. 8,
  • Wengao Pan , Xiaoliang Zhou, Ying Li, Wenting Dong, Lei Lu, Shengdong Zhang, “High Performance of ZnSnO Thin-Film Transistors Engineered by Oxygen Defect Modulation”, Materials Science in Semiconductor Processing, vol.151,
  • Qing Wu Yin, Wen Dong Lian, Jin Chuan Li, Jia Jia Qian, Shengdong Zhang, Wei Ran Cao, “A Study of Thin Film Encapsulation on Improving Electrical Characteristics and Reliability for Flexible OLEDs”, Materials Science Forum, vol.1058, 93-98, 2022.
  • Jiwen Yang, Congwei Liao, Kun Wang, Junjun An, Shuai Shen, Shengdong Zhang, “A-Si TFT Integrated Gate Driver Workable at -40°C Using Bootstrapped Carry Signal”, IEEE Access,Vol.10, pp. 93887-93893, 2022 .
  • Yu Li, Xiaoqing Huang, Congwei Liao, Runsheng Wang, Shengdong Zhang, Lining Zhang, Ru Huang, “A Dynamic Current Hysteresis Model for IGZO-TFT”, Solid-State Electronics, vol. 197, 2022.online.
  • Dawei Zheng, Fayang Liu, Jitong Zhou, Guijun Li, Xianda Zhou, Shengdong Zhang, Lei Lu, “Suppression of Nonideal Leakage Currentin a-InGaZnO Schottky Diode with Edge Termination Structures”, Applied Physics Letters,online.
  • Hongyuan Xu, XuWang, Daobing Hu, Feng Zheng, Juncheng Xiao, Lei Lu, Shengdong Zhang, “Blue Laser Diode Annealing-Enhanced Bottom-Gate Low-Temperature Poly-Si Thin-Film Transistors”, Materials Science in Semiconductor Processing,vol.152, 2022.

 

2021年期刊论文

  • Yuzhi Li, Kuankuan Lu, Shengdong Zhang,“Anodization-Induced ZrOx/AlOx Stacked Films for Low-Temperature, Solution-Processed Indium Oxide Thin-Film Transistors,” Journal of Physics D-Applied Physics, vol. 54, no. 2, 2021.
  • Taoyu Zou, Ben Xiang, Yangbing Xu, Ya Wang, Chuan Liu, Jun Chen, Kai Wang, Qing Dai, Shengdong Zhang,Yong-Young Noh, Hang Zhou, “Pixellated Perovskite Photodiode on IGZO Thin Film Transistor Backplane for Low Dose Indirect X-Ray Detection,” IEEE J Journal of the Electron Devices Society,” vol. 9, pp.96-101, 2021.
  • Hing-Mo Lam, Hezi Qiu, Chenglin Li, Jinyuan Wen, Wenlong Bai,Congwei Liao, Min Zhang, Hailong Jiao and Shengdong Zhang, “Fast Progressive Compensation Method for Externally Compensated AMOLED Displays,”IEEE Journal of the Electron Devices Society, vol.9, pp.257-264, 2021.
  • Yan Xue, Longjie Wang, Yu Zhang, Guangmin Liang, Junwei Chu, Baixiang Han, Weiran Cao, Congwei Liao, Shengdong Zhang, “31-Inch 4K Flexible Display Employing Gate Driver With Metal Oxide Thin-Film Transistors,” IEEE Electron Device Letters, vol. 42, no. 2, pp. 188 - 191, 2021.
  • Jiaona Zhang, Weihong Huang, Kuan-Chang Chang, Yuhao Shi, Changbin Zhao, Xinwei Wang, Hong Meng, Shengdong Zhang, Min Zhang, “Performance Enhancement and Bending Restoration for Flexible Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors by Low-Temperature Supercritical Dehydration Treatment,” ACS Applied Materials & Interfaces, vol. 13, no. 7, pp 8584-8594, 2021.
  • Lixuan Chen, Xulin Lin, Jinyang Zhao, Li Guo, Jing Liu, Xin Zhang, Shengdong Zhang, Xiao Wei Sun, “Eliminating Light Depolarization From Metal Microstructure in Liquid Crystal Displays,” Journal of the Society For Information Display, vol.29, no.3, pp.170-178, 2021.
  • Li Xiang, Ya Wang, Xiyuan Liu, Xuekai Huang, Zhilong Xin, Yangbing Xu, Chuan Liu, Kai Wang, Jun Chen, Yang Yang, Shengdong Zhangand Hang Zhou, “Flexible Indirect X-Ray Detector Enabled by Organic Photodiode and CsPbBr3 Perovskite Quantum Dot Scintillator,” Flexible and Printed Electronics, vol.6, no.1, 2021.
  • Huan Yang, Xiaoliang Zhou,Haishi Fu, Baozhu Chang, Yuxin Min, Hao Peng, Lei Lu, Shengdong Zhang, “Metal Reaction-Induced Bulk-Doping Effect in Forming Conductive Source-Drain Regions of Self-Aligned Top-Gate Amorphous InGaZnO Thin-Film Transistors” ACS Applied Materials and Interfaces, 13, no. 9, pp. 11442-11448, 2021.
  • Shuai Shen, Congwei Liao, Jiwen Yang, Hailong Jiao, Shengdong Zhang,“A Compact Gate Driver with Bifunctional Capacitor for in-Cell Touch Mobile Display,” Journal of the Society for Information Display, vol. 29, no.7, pp.526-536, 2021.
  • Kuan-Chang Chang, Luodan Hu, Kang Qi, Lei Li, Xinnan Lin, Shengdong Zhang, Ziwen Wang,Ying-Chih Lai, Heng-Jui Liu and Tze-Peng Kuo, “Low-Temperature Supercritical Dehydroxylation for Achieving an Ultra-Low Subthreshold Swing of Thin-Film Transistors,”Nanoscale, vol. 13, no. 11, pp.5700-5705, 2021.
  • Juncheng Xiao, Jinming Liu, Yoonsung Um, Qi Zhang,Shengdong Zhang, “High-Transmittance Vertical-Alignment Liquid Crystal Display With Subpixel Electrode Shielding Electric Field Design,” Displays, vol.68, 2021.
  • Hing-Mo Lam, Fan Guo, Hezi Qiu, Min Zhang, Hailong Jiao, Shengdong Zhang,“Pseudo Multi-Port SRAM Circuit for Image Processing in Display Drivers,” IEEE Transactions on Circuits and Systems for Video Technology, vol. 31, no.5, pp. 2056-2062, 2021.
  • Changde He, Binzhen Zhang, Chenyang Xue, Wendong Zhang andShengdong Zhang, “Wafer-Bonding Fabricated CMUT Device with Parylene Coating,” Micromachines, vol.12, no.5, 2021.
  • Jinyuan Wen, Chenglin Li, Junjun An, Zhichao Peng, Hesheng Lin, Min Zhang, Shengdong Zhang,“High-Speed Low-Power Rail-to-Rail Buffer using Dynamic-Current Feedback for OLED Source Driver Applications,” Analog Integrated Circuits and Signal Processing, vol. 110, no. 1, pp. 115-125, 2021.
  • Hongyu He,Yuan Liu, Junli Yin, Xinlin Wang, Xinnan Lin, Shengdong Zhang, “Introducing Effective Temperature Into Arrhenius Equation With Meyer-Neldel Rule for Describing Both Arrhenius and Non-Arrhenius Dependent Drain Current of Amorphous InGaZnO TFTs,” Solid State Electronics, vol.181, 2021.
  • Shuai Shen, Congwei Liao, Jiwen Yang, Hailong Jiao, Shengdong Zhang“Capacitor Reused Gate Driver for Compact In-Cell Touch Displays,” IEEE Journal of the Electron Devices Society,” vol. 9, pp.533-538, 2021.
  • Shuai Shen, Congwei Liao, Jiwen Yang, Shengdong Zhang,“A Gate Driver Circuit with the Two-Stage Pre-Charge Structure for in-Cell Touch Panels,” Scientia Sinica InformationisI, vol. 51, no. 6, pp.1030-1040, 2021.
  • Hing-Mo Lam, Hezi Qiu, Chenglin Li, Jinyuan Wen, Wenlong Bai, Jie Huang, Chen Xu, Xinxin Huo, Shuiping Yi, Weiling Zeng, Dewei Zhang, Tengteng Lei, Silin Lu, Junjun An, Congwei Liao, Min Zhang, Hailong Jiao, Shengdong Zhang, “ OLEDoS Microdisplay with OLED Threshold Voltage Detection and Fast-Progressive Compensation,”SID Symposium Digest of Technical Papers, vol.52, no.1, pp. 173-176, 2021.
  • Junjun An, Congwei Liao, Jiwen Yang, Hezi Qiu, Zhichao Peng, Chao Dai, Xin Zhang, Shengdong Zhang,“ Programmable LTPS-TFT Gate Driver with Tunable Pulse Width for Adjusting AMOLED Brightness,”SID Symposium Digest of Technical Papers, vol.52, no.1, pp. 180-183, 2021.
  • Jia Fu, Junjun An, Congwei Liao, Jian Liang, Chao Dai, Xin Zhang, Shengdong Zhang, “Design of AMOLED Pixel Circuit Using LTPO TFTs with Enhanced Reliability,” SID Symposium Digest of Technical Papers, vol.52, no.1, pp. 1116-1119, 2021.
  • Jiwen Yang, Jie Huang, Congwei Liao, Junjun An, Chao Dai, Xin Zhang, Shengdong Zhang, “Reliable Gate Driver for Real-Time External Compensated AMOLED Display Using InGaZnO TFTs,”SID Symposium Digest of Technical Papers, vol.52, no.1, pp. 1108-1111, 2021.
  • Hing-Mo Lam, Hailong Jiao, Min Zhang, Shengdong Zhang, “Data-Line Driver with Gray-Level-Dependent Far-End Auxiliary Driving for Large AMOLED Display Panel,”SID Symposium Digest of Technical Papers, vol.52, no.1, pp. 169-172, 2021.
  • Juncheng Xiao, Jiayang Fei, Feng Zheng, Quansheng Liu, Wenxue Huo, Ji Li, Wenlin Mei, Hongyuan Xu, Shengdong Zhang,“Mini-LED Backlight Units on Glass for 75-Inch 8k Resolution Liquid Crystal Display,” Journal of the Society For Information Display, vol. 30, no. 1, 54-60, 2021.
  • Huan Yang, Jiye Li, Xiaoliang Zhou, Lei Lu, andShengdong Zhang, “Self-Aligned Top-Gate Amorphous Zinc-Tin Oxide Thin-Film Transistor With Source/Drain Regions Doped by Al Reaction”, IEEE Journal of the Electron Devices Society, vol.9, pp.653 – 657,
  • Zhilong Xin, Yang Tan, Tong Chen, Emad Iranmanesh,Lei Li, Kuan-Chang Chang,  Shengdong Zhang, Chuan Liu and Hang Zhou,“Visible-Light-Stimulated Synaptic InGaZnO Phototransistors Enabled by Wavelength-Tunable Perovskite Quantum Dots,” Nanoscale Advances, vol. 3, no. 17, pp. 5046-5052, 2021.
  • Jinyang Zhao, Lixuan Chen, Dongze Li, Zhiqing Shi, Pai Liu, Zhenlei Yao, Hongcheng Yang,Taoyu Zou, Bin Zhao, Xin Zhang, Hang Zhou, Yixing Yang, Weiran Cao, Xiaolin Yan, Shengdong Zhang, Xiao Wei Sun, “Large-area Patterning of Full-Color Quantum Dot Arrays Beyond 1000 Pixels Per Inch by Selective Electrophoretic Deposition,” Nature Communications, vol. 12, no. 1, 2021.
  • Wu Jiaye, Liu Xuanyi, Fu Haishi, Chang Kuan-Chang, Shengdong Zhang, Fu HY,Li Qian, “Manipulation of Epsilon-Near-Zero Wavelength for the Optimization of Linear and Nonlinear Absorption by Supercritical Fluid ”, Scientific Reports, vol.11, no. 1, 2021.
  • Li Xiang, Xuekai Huang , Ya Wang , Zhilong Xin, Gaoda Chai , Yangbing Xu , Kai Wang , Jun Chen , Chuan Liu , Xinwei Wang, Shengdong Zhang, Hang Zhou, “X-Ray Sensitive Hybrid Organic Photodetectors With Embedded CsPbBr3 Perovskite Quantum Dots,” Organic Electronics, vol. 98, 2021.
  • Guangshuo Cai, Hongtai Luo, Li Guo, Liuan Li, Shengdong Zhang,“MoOx-Si Heterojunction With Wide-Band-Gap MoOx Contact Layer in the Application of Low-Intensity Visible-Light Sensing,” Materials Science in Semiconductor Processing, vol.131, 2021.
  • Li Lei, Hu Luodan, Liu Kai, Chang Kuan-Chang, Zhang Rui, Lin Xinnan, Shengdong Zhang, Huang Pei, Liu Heng-Jui, Kuo Tzu-Pen, “Bifunctional Homologous Alkali-Metal Artificial Synapse with Regenerative Ability and Mechanism Imitation of Voltage-Gated Ion Channels,”Materials Horizons, vol.8, no.11, pp. 3072-3081, 2021.
  • Kuan-Chang Chang, Kai Liu, Luodan Hu, Lei Li,Xinnan Lin, Shengdong Zhang, Rui Zhang, Heng-Jui Liu, Tzu-Peng Kuo, “Supercritical Ammoniation-Enabled Interfacial Polarization for Function-Mode Transformation and Overall Optimization of Thin-Film Transistors.” ACS Applied Materials & Interfaces, vol. 13, no. 33, pp. 40053-40061, 2021.
  • Luodan Hu, Lei Li, Kuan-Chang Chang, Xinnan Lin, Pei Huang, Shendong Zhang“Ultrasensitive Freestanding and Mechanically Durable Artificial Synapse with Attojoule Power Based on Na-Salt Doped Polymer for Biocompatible Neuromorphic Interface,” Advanced Functional Materials, vol.31, no.42, 2021.
  • Jitong Zhou, Yunping Wang, Xianda Zhou, Guijun Li, Zhihe Xia, Fion Sze Yan Yeung,Man Wong , Hoi Sing Kwok, Shengdong Zhang, Lei Lu, “Reliable High-Performance Amorphous InGaZnO Schottky Barrier Diodes With Silicon Dioxide Passivation Layer,” IEEE Electron Device Letters, vol. 42, no. 9, pp. 1338 - 1341, 2021.
  • Huan Yang, Tengyan Huang, Xiaoliang Zhou, Jiye Li, Sikai Su, Lei Lu and Shengdong Zhang,“Self-Heating Stress-Induced Severe Humps in Transfer Characteristics of Amorphous InGaZnO Thin-Film Transistors”, IEEE Transactions on Electron Devices, vol. 68, no. 12, pp. 6197 - 6201, 2021.

2020年期刊论文

  1. Sheng Sun, Yunzhi Li, Shengdong Zhang, “High-Performance Inverters Based on Ambipolar Organic-Inorganic HeteroJunction Thin-Film Transistors,” Chinese Physics B, vol. 29 , no. 5, 2020.
  2. Hao Peng, Baozhu Chang, Haishi Fu, Yuqing Zhang, Xiaoliang Zhou, Lei Lu, Shengdong Zhang, “Top-Gate Amorphous Indium-Gallium-Zinc-OxideThin-Film Transistors with Magnesium Metallized Source/Drain Regions,” IEEE Transactions on Electron Devices, vol. 67, no. 4, pp. 1619-1624, 2020.
  3. Zixuan Li, Yuan Huang, Jiyan Zhang, Shunyu Jin, Shengdong Zhang , Hang Zhou,“One-Step Synthesis Of Mnox/Ppy Nanocomposite As a High-Performance Cathode For a Rechargeable Zinc-Ion Battery And Insight Into Its Energy Storage Mechanism Storage Mechanism,”Nanoscale ,vol. 12, no. 6, pp. 4150-4158, 2020.
  4. HuijinLi, Dedong Han, Junchen Dong, Zhuang Yi, Xiaobin Zhou, Shengdong Zhang, Xing Zhang, Yi Wang, “Enhanced Performance of Atomic Layer Deposited Thin-Film Transistors with High-Quality ZnO/Al2O3 Interface,” IEEE Transactions on Electron Devices, vol. 67, no. 2, pp. 518-523, 2020.
  5. Guang Yang, Xiyuan Liu, Yizhe Sun, Chao Teng, Yong Wang, Shengdong Zhang, Hang Zhou , “Improved Current Efficiency of Quasi-2D Multi-Cation Perovskite Light-Emitting Diodes: The Effect of Cs and K,” Nanoscale, vol. 12, no. 3, pp. 1571-1579, 2020.
  6. Jian Liang, shuiping Yi, Wenglong Bai, Chengchang Zhan, Congwei Liao, Hing-Mo Lam, Min Zhang, Shengdong Zhang, Hailong Jiao, “A-80 DB PSRR 4.99 ppm/Degrees C TC Bandgap Reference with Nonlinear Compensation,” Microelectronics Journal, vol. 95, pp. 72-77, 2020.
  7.  Ya Wang, Changdong Chen, Taoyu Zou , Lizhi Yan , Chuan Liu, Xingzhi Du, Shengdong Zhang, Hang Zhou , “Spin-On-Patterning of Sn–Pb Perovskite Photodiodes on IGZO Transistor Arrays for Fast Active-Matrix Near-Infrared Imaging,” Advanced Materials Technologies, vol. 5, no. 1, 2020.
  8. Wei-Chen Lin, Ting-Chang Chang, Wan-Ching Su, Yang-Hau Hung, Hong-Chih Cheng, I-Nien Lu, Yu-Fa Tu, Hsi-Ming Chang , Tsung-Ming Tsai , ShengDong Zhang, “Investigating the Back-Channel Effect and Asymmetric Degradation under Self-Heating Stress in Large Size a-InGaZnO TFTs,” IEEE Transactions on Electron Devices, vol. 41, no. 1, pp. 58-61, 2020.

 

2019年期刊论文

  1.  Lizhi Yan, Xingzhi Du, Chuan Liu, Shengdong Zhang, Hang Zhou, “Narrow Bandgap Pb–Sn Perovskites/InGaZnO Hybrid Phototransistors for Near-Infrared Detection,” Physica Status Solidi A-Applications and Materials Science, vol. 216, no. 23, 2019.
  2. Yuan Huang, Jiyan Zhang, Jiuwei Liu, Zixuan Li,Shunyu Jin, Zigang Li, Shengdong Zhang,Hang Zhou*, “Flexible and Stable Quasi-Solid-State Zinc ion Battery with Conductive Guar Gum Electrolyte,”  Materials Today Energy, vol. 14, 2019.
  3. Lixuan Chen, Xiao Wei Sun, Miao Zhou, Xin Zhang, Zihang Song, Yaqian Hou, Xulin Lin,  Jinyang Zhao, Shui Chih Alan Lien, Shengdong Zhang, “A Quantum Dot Polarizer for Liquid Crystal Displays with Much Improved Efficiency and Viewing Angle,” IEEE Journal of Quantum Electronics, vol. 55, no. 6, pp. 1-6, 2019.
  4. Huafei Xie, Macai Lu, Nian Liu, Shujhih Chen, Shengdong Zhang, Chiayu Lee, “Effect of PVD Process on the Crystallization of IGZO Thin Films,” Acta Scientiarum Naturalium Universitatis Pekinensis, vol. 55, no. 6, pp. 1021-1028, 2019.
  5.  Hao Yu, Xiyuan Liu, Lizhi Yan, TaoyuZou, Huan Yang, Chuan Liu, Shengdong Zhang, Hang Zhou, “Enhanced UV-visible Detection of InGaZnO Phototransistors Via CsPbBr3 Quantum Dots,” Semiconductor Science and Technology , vol. 34, no. 12, 2019.
  6. Qungang Ma, Liangcai Cao, Zehao He, Shengdong Zhang, “Progress of Three-Dimensional Light-Field Display [Invited],” Chinese Optics Letters, vol. 17, no. 11, 2019.
  7. Shin-Ping Huang, Po-Hsun Chen, Yu-Ching Tsao, Hong-Chih Chen, Yu-Zhe Zheng, Ann-Kuo Chu, Yu-Shan Shih, Yu-Xuan Wang, Chia-Chuan Wu, Yao-Kai Shih, Yu-Hua Chung, Wei-Han Chen, Terry Tai-Jui Wang, Sheng-Dong Zhang , Ting-Chang Chang , “Abnormal C-V Hump Effect Induced by Hot Carriers in Gate Length-Dependent p-Type LTPS TFTs,” IEEE Transactions on Electron Devices, vol. 66, no. 11, pp. 4764-4767, 2019.
  8. Xiaobin Zhou , Dedong Han , Junchen Dong,Huijin Li , Wen Yu , Zhuang Yi,Shengdong Zhang , Xing Zhang, Yi Wang, “High-performance Al-Zn-O Thin-Film Transistors Sputtering at Different Power,” IEEE Transactions on Electron Devices, vol. 66, no. 11, pp. 4774-4777, 2019.
  9. Guan-Fu Chen, Hong-Chih Chen, Ting-Chang Chang, Shin-Ping Huang, Kuan-Ju Zhou, Jian-Jie Chen, Chuan-Wei Kuo, Wan-Ching Su, Yu-Ching Tsao, Sung-Chun Lin, Ming-Chang Yu, Yao-Chih Chuang, Shengdong Zhang, “Abnormal Back Channel Leakage under Large Drain Voltage in Short Channel Organic Thin-Film Transistors,”  IEEE Electron Device Letters, vol. 40, no. 11, pp. 1752-1755, 2019.
  10. Yizhe Sun, Qiang Su, Heng Zhang, Fei Wang, Shengdong Zhang*, Shuming Chen, “Investigation on Thermally Induced Efficiency Roll-Off: Toward Efficient and Ultrabright Quantum-Dot Light-Emitting Diodes,” ACS Nano, vol. 13, no. 10, pp. 11433-1144, 2019.
  11.  Xinxin Huo, Congwei Liao, Min Zhang, Hailong Jiao, Shengdong Zhang, “A Pixel Circuit with Wide Data Voltage Range for OLEDoS Microdisplays with High Uniformity,” IEEE Transactons on Electron Devices, vol. 66, no. 11, pp. 4798-4804, 2019.
  12.  Yuqing Zhang, Huan Yang, Hao Peng, Yunkai Cao, Ludong Qin, Shengdong Zhang, “Self-Aligned Top-Gate Amorphous InGaZnO TFTs With Plasma Enhanced Chemical Vapor Deposited Sub-10 nm SiO2 GateDielectric for Low-Voltage,” IEEE Electron Device Letters, vol.40, no. 9, pp. 1459-1462, 2019.
  13.  Chunhui Du, Min Zhang, Qiuyue Huang, Shengdong Zhang , Yang Chai, “Ultralow-Voltage All-Carbon Low-Dimensional-Material Flexible Transistors Integrated by Room-Temperature Photolithography Incorporated Filtration,” Nanoscale, vol. 11, no. 32, pp. 15029-15036, 2019.
  14.  Qun Gang Ma, Liu-Fei Zhou, Yue Yu , Guo Yong Ma, Sheng-Dong Zhang*, “Electro-Static Discharge Failure Analysis and Design Optimization of Gate-Driver on Array Circuit in InGaZnO Thin Film Transistor Backplane,”  Wuli Xuebao/Acta Physica Sinica, vol. 68, no. 10, 2019.
  15. Qungang Ma, Jian Zhao, Shengdong Zhang*, Ling Yuan, Jun Xia, Jun Wu, “Tilted LCD Pixel With Liquid Crystal GRIN Lens for Two-Dimensional/Three-Dimensional Switchable Display,” IEEE Photonics Journal, vol. 11, no. 4, 2019.
  16. Qungang Ma, Haihong Wang, Liufei Zhou, Jiali Fan, Congwei Liao, Xiaojun Guo, Shengdong Zhang *,  “Robust Gate Driver on Array Based on Amorphous IGZO Thin-Film Transistor for Large Size High-Resolution Liquid Crystal Displays,” IEEE Journal of the Electron Devices Society, vol. 7, no. 1, pp. 717-721, 2019.
  17. Huijin Li, Dedong Han, Zhuang Yi, Junchen Dong, Shengdong Zhang, Xing Zhang, Yi Wang, “High-Performance ZnO Thin-Film Transistors Prepared by Atomic Layer Deposition,”IEEE Transactions on Electron Devices, vol.66, no. 7, pp. 2965-2970, 2019.
  18. Wen Luo, Lizhi Yan, Rong Liu, Taoyu Zou, Shengdong Zhang, Chuan Liu, Qing Dai, Jun Chen, Hang Zhou, “High Detectivity ITO/Organolead Halide Perovskite Schottky Photodiodes,” Semiconductor Science and Technology , vol. 34, no. 7, 2019.
  19. Shin-Ping Huang, Yu-Zhe Zheng, Ting-Chang Chang , Bo-Wei Chen, Po-Hsun Chen , Ann-Kuo Chu,Hong-Chih Chen, Yu-Ching Tsao, Min-Chen Chen, Wei-Han Chen, Terry Tai-Jui Wang,Jerzy Kanicki , Sheng-Dong Zhang, “Enhancing Repetitive Uniaxial Mechanical Bending Endurance at R=2 mm Using an Organic Trench Structure in Foldable Low Temperature Poly-Si Thin-Film Transistors Thin-Film Transistors,”  IEEE Electron Device Letters,  vol. 40,no. 6, pp. 931-936, 2019.
  20.  Gang Wang, Baozhu Chang, Huan Yang, Xiaoliang Zhou , Letao Zhang , Xiaodong Zhang, Shengdong Zhang,* “Implementation of Self-Aligned Top-Gate Amorphous Zinc Tin Oxide Thin-Film Transistors,” IEEE Electron Device Letters, vol.40, no. 6, pp. 901-904, 2019.
  21.  Guan-Fu Chen, Hong-Chih Chen, Ting-Chang Chang, Shin-Ping Huang, Hua-Mao Chen, Po-Yung Liao, Jian-Jie Chen, Chuan-Wei Kuo, Wei-Chih Lai, Ann-Kuo Chu, Sung-Chun Lin, Chia-Sen Chang, Cheng-Ming Tsai,  Ming-Chang Yu, Shengdong Zhang , “An Energy-Band Model for Dual-Gate-Voltage Sweeping in Hydrogenated Amorphous Silicon Thin-Film Transistors,” IEEE Transactions on Electron Devices, vol.66, no.6, pp.2614-2619, 2019.
  22.  Yuan Huang, Jiuwei Liu, Jiyan Zhang, Shunyu Jin, Yixiang Jiang, Shengdong Zhang, Zigang Li, Chunyi Zhi, Guoqing Du , Hang Zhou, “Flexible Quasi-Solid-State Zinc Ion Batteries Enabled By Highly Conductive Carrageenan Bio-Polymer Electrolyte,” RSC Advances,  vol. 9, no. 29,pp. 16313-16319, 2019.
  23. Qun-Gang Ma, Liu-Fei Zhou, Yue Yu, Guo Yong Ma, ShengDong Zhang*, “Electro-Static Discharge Failure Analysis and Design Optimization of Gate-Driver on Array Circuit in InGaZnO Thin Film Transistor Backplane,” Acta Physica Sinica,  vol.68, no. 10, 2019.
  24. Changdong Chen, Bo-Ru Yang, Gongtan Li, Hang Zhou, Bolong Huang, Qian Wu, Runze Zhan, Yong-Young Noh , Takeo Minari, Shengdong Zhang, Shaozhi Deng, Henning Sirringhaus, Chuan Liu ,“Analysis of Ultrahigh Apparent Mobility in Oxide Field-Effect Transistors,” Advanced Science, vol. 6, no. 7, 2019.
  25.  Zhen Luo, Dedong Han, Junchen Dong ,Huijin Li, Wen Yu, Shengdong Zhang, Xing Zhang, Yi Wang, “Tunable Arsenene Band Gap in Arsenene/Graphene Heterostructures,” Japanese Journal Of Applied Physics, vol. 58, no.B, 2019.
  26.  Yu-Ching Tsao, Ting-Chang Chang, Shin-Ping Huang, Yu-Lin Tsai, Mao-Chou Tai, Hong-Yi Tu, Hong-Chih Chen, Jen-Wei Huang, Shengdong Zhang, “Effects of Ultraviolet Light on the Dual-Sweep I–V Curve of a-InGaZnO4 Thin-Film Transistor,” IEEE Transactions On Electron Devices, vol. 66, no. 4, pp. 1772-1777, 2019.
  27. Yang Shao, Xiaoliang Zhou, Huan Yang, Baozhu Chang, Ting Liang, Yi Wang, Shengdong Zhang,* “Homo-Junction Bottom-Gate Amorphous In-Ga-Zn-O TFTs With Metal-Induced Source/Drain Regions,” IEEE Journal of the Electron Devices Society,  vol. 7, no. 1, pp. 52-56, 2019.
  28. Zhaofeng Huang, Yuze Niu, Wengao Lu, Yajun Zhu , Shengdong Zhang, “Low-Power, High-Speed Output Buffer with Shared-TIA for Ultra-Large IRFPAs,” Electronics Letters, vol.55, no. 4, pp, 176-177, 2019.
  29.  Rong Liu, Renzheng Qiu, Taoyu Zou, Chuan Liu, Jun Chen, Qing Dai, Shengdong Zhang , Hang Zhou, “SnO2-rGO Nanocomposite as an Efficient Electron Transport Layer for Stable Perovskite Solar Cells on AZO Substrate,” Nanotechnology, vol. 30, no. 7, 2019.
  30.  Yizhe Sun, Yibin Jiang, Xiao Wei Sun, Shengdong Zhang*, Shuming Chen, “Beyond OLED: Efficient Quantum Dot Light-Emitting Diodes for Display and Lighting Application,” Chemical Record, vol. 19, no. 8, pp. 1729-1752, 2019.
  31. Taoyu Zou, Jianqi Zhang, ShuYi Huang, Chenning Liu, RenZheng Qiu, XiaoZhi Wang, Wei Wu, Hai Wang, Zhi Xiang Wei, Qing Dai, Chuan Liu, Shengdong Zhang, Hang Zhou, “Reduced Graphene Oxide-Induced Crystallization of CuPc Interfacial Layer for High Performance of Perovskite Photodetectors,” RSC Advances, vol. 9, no. 7, pp. 3800-3808, 2019.
  32. Yizhe Sun, Wei Chen, Yinghui Wu, Zhubing He, Shengdong Zhang*, Shuming Chen, “A Low-Temperature-Annealed and UV-Ozoneenhanced Combustion Derived Nickel Oxide Holeinjection Layer for Flexible Quantum Dot Lightemitting Diodes,” Nanoscale, vol. 11, no. 3, pp. 1021-1028,  2019.

 

2018年期刊论文

  1. Xiaote Xu, Lizhi Yan,Taoyu Zou, Renzheng Qu, Chuan Liu, Qing Dai,Jun Chen, Shengdong Zhang, Hang Zhou，“Enhanced Detectivity and Suppressed Dark Current of Perovskite-InGaZnO Phototransistor via a PCBM Interlayer，” ACS Applied Materials and Interfaces, vol. 10, no. 50, pp. 44144-44151, 2018.
  2. Wen Yu,Dedong Han, Huijin Li,Junchen Dong, Xiaobin Zhou,Zhuang Yi, Zhen Luo, Shengdong Zhang, Xing Zhang, Yi Wang, “Titanium Doped Zinc Oxide Thin Film Transistors Fabricated By Cosputtering Technique,” Applied Surface Science, vol. 459, pp. 345-348, 2018.
  3. Xiantao Jiang, Huiling Lu, Qian Li, Hang Zhou, Shengdong Zhang , Han Zhang , “Epsilon-Near-Zero Medium For Optical Switches In a Monolithic Waveguide Chip At 1.9 Mu,” Nanophotonics, vol. 7, no. 11, pp. 1835-1843, 2018.
  4. Mao Chou Tai, Ting Chang Chang, Ming Chen Chen, Hsiao Cheng Chian, Yu Ching Tsao, Yu Chieh Chien, Yu Xuan Wang, Yu-Lin Tsai, Jian Jie Chen, Shengdong Zhang, Hsi-Ming Chang , “Floating Top Gate-Induced Output Enhancement Of a-Ingazno Thin Film Transistors Under Single Gate Operations,” Applied Physics Letters, vol. 113, no. 17, 2018.
  5. Xiang Xiao, Letao Zhang, Yang Shao, Xiaoliang Zhou, Hongyu He, Shengdong Zhang, “Room-Temperature-Processed Flexible Amorphous InGaZnO Thin Film Transistor,” ACS Applied Materials and Interfaces, vol. 10, no. 31, pp. 25850-25857, 2018.
  6. Cheng-Hsien Wu, Shih-Kai Lin, Chih-Hung Pan, Po-Hsun Chen, Wen-Yan Lin, Ting-Chang Chang, Tsung-Ming Tsai , You-Lin Xu , Chih-Cheng Shih , Yu-Shuo Lin, Wen-Chung Chen, Ming-Hui Wang, Sheng Dong Zhang, Simon M Sze, “Analyzing Electric Field Effect by Applying an Ultra-Short Time Pulse Condition in Hafnium Oxide-Based RRAM,”  IEEE Electron Device Letters, vol. 39, no. 8, pp. 1163-1166, 2018.
  7. Hing-Mo Lam, Ying Wang, Min Zhang, Hailong Jiao, Shengdong Zhang, “A Compact Pixel Circuit for Externally Compensated AMOLED Displays,” Journal of the electron devices society, vol. 6, no. 1, pp. 936 - 941, 2018.
  8. Yizhe Sun, Weigao Wang, Heng Zhang, Qiang Su, Jiangliu Wei, Pai Liu, Shuming Chen, Shengdong Zhang,“High-Performance Quantum Dot Light-Emitting Diodes Based on Al-Doped ZnO Nanoparticles Electron Transport Layer,” ACS Applied Materials and Interfaces, vol. 10, no. 22, pp. 18902-18909, 2018.
  9.  Chung-I Yang, Ting-Chang Chang, Po-Yung Liao, Li-Hui Chen, Bo-Wei Chen, Wu-Ching Chou, Guan Fu Cheng,  Sung-Chun Lin, Cheng-Yen Yeh, Cheng-Ming Tsai, Ming-Chang Yu, Shengdong Zhang,  “Drain-Induced-Barrier-Lowing-Like Effect Induced by Oxygen-Vacancy in Scaling-Down via-Contact Type Amorphous InGaZnO Thin-Film Transistors,” IEEE Journal of the Electron Devices Society, vol. 6, no. 1, pp. 685-690, 2018.
  10. Ting Liang, Yang Shao, Huiling Lu, Xiaoliang Zhou, Xuan Deng, Shengdong Zhang, “Scalability and Stability Enhancement in Self-Aligned Top-Gate Indium- Zinc-Oxide TFTs With Al Reacted Source/Drain, Journal Of The Electron Devices Society, vol. 6, no. 1, pp. 680-684, 2018.
  11. Mei Yuan, Yi-Ting Tseng, Po-Hsun Chen,Chih-Cheng Shih , Hui-Chun Huang, Ting-Chang Chang, Xiaole Cui,  Xinnan Lin, Shengdong Zhang, Hang Zhou , “Enhancing the Electrical Uniformity and Reliability of the HfO2-Based RRAM Using High- Permittivity Ta2O5 Side Wall,” IEEE Journal of the Electron Devices Society, vol. 6, no. 1, pp. 627-632, 2018.
  12. (12). Huijin Li, Dedong Han, Junchen Dong, Wen Yu, Yi Liang, Zhen Luo, Shengdong Zhang, Xing Zhang, Yi Wang, “Enhanced Electrical Properties Of Dual-Layer Channel Zno Thin Film Transistors Prepared By Atomic Layer Deposition,” Applied Surface Science, vol. 439, pp. 632-637, 2018.
  13. Yu Ting Su, Hsi Wen Liu, Po Hsun Chen, Ting Chang Chang, Tsung Ming Tsai, Tian Jian Chu , Chih Hung Pan , Cheng Hsien Wu , Chih Cheng Yang , Min Chuan Wang, Shengdong Zhang , Hao Wang, Simon M Sze, “A Method to Reduce Forming Voltage Without Degrading Device Performance in Hafnium Oxide-Based 1T1R Resistive Random Access Memory,” IEEE Journal of the Electron Devices Society, vol. 6, no. 1, pp. 341-345, 2018.
  14. Chung I Yang, Ting-Chang Chang, Po Yung Liao, Bo Wei Chen, Wu Ching Chou, Guan Fu Chen, Shin Ping Huang, Yu Zhe Zheng, Yu Xuan Wang, Hsi Wen Liu, Chien Yu Lin, Yu Shan Lin, Ying Hsin Lu, Shengdong Zhang, “Combined Effects of Light Illumination and Various Bottom Gate Length on the Instability of Via-Contact-Type Amorphous InGaZnO Thin-Film Transistors,” IEEE Transactions on Electron Devices, vol. 65, no. 2, pp. 533-536, 2018.
  15. Huiling Lu, Xiaoliang Zhou, Ting Liang, Letao Zhang, Shengdong Zhang, “Nonlinear Photocurrent-Intensity Behavior Of Amorphous Inzno Thin Film Transistors,” Applied Physics Letters, vol. 112, no. 4, 2018.
  16. Junchen Dong, Huijin Li, Dedong Han, Wen Yu, Zhen Luo, Yi Liang, Shengdong Zhang, Xing Zhang, Yi Wang, “Investigation of c-Axis-Aligned Crystalline Gadolinium Doped Aluminum-Zinc-Oxide Films Sputtered At Room-Temperature,” Applied Physics Letters, vol. 112, no. 1, 2018.

 

2017年期刊论文

  1. Huijin Li, Dedong Han, Liqiao Liu, Junchen Dong, Guodong Cui, Shengdong Zhang, Xing Zhang, Yi Wang,“Bi-layer Channel AZO/ZnO Thin Film Transistors Fabricated by Atomic Layer Deposition Technique,” Nanoscale Research Letters, vol. 12,2017.
  2. Huiling Lu, Xiaoliang Zhou, Ting Liang, Letao Zhang, and Shengdong Zhang, “Oxide Thin-Film Transistors With IMO and IGZO Stacked Active Layers for UV Detection,” IEEE Journal of The Electron Devices Society, vol.5, no.6, pp.504-508, 2017.
  3. Xiaoliang Zhou, Yang Shao, Letao Zhang, Huiling Lu, Hongyu He, Dedong Han, Shengdong Zhang, “Oxygen Interstitial Creation in a-IGZO Thin-Film Transistors Under Positive Gate-Bias Stress,” IEEE Electron Device Letters, vol.38, no.9, pp.1252-1255, 2017.
  4. Hsiao Cheng Chiang, Ting Chang Chang, Po Yung Liao,Bo Wei Chen, Yu Ching Tsao, Tsung Ming Tsai, Yu Chieh Chien, Yi Chieh Yang,Kuan Fu Chen, Chung I Yang, Yu Ju Hung, Kuan Chang Chang, Sheng Dong Zhang, Sung Chun Lin,Cheng Yen Yeh, “Investigating Degradation Behaviors Induced By Mobile Cu Ions Under High Temperature Negative Bias Stress In a-Ingazno Thin Film Transistors,” Applied Physics Letters, vol.111, no.13, 2017.
  5. Letao Zhang, Xiaoliang Zhou, Baozhu Chang, Longyan Wang, Yuxiang Xiao, Hongyu He, Shengdong Zhang, “Source-Drain Resistance Characteristics of Back-Channel Etched Amorphous Ingazno Thin Film Transistors with Tio2:Nb Protective Layer,” Materials Science in Semiconductor Processing, vol.68, pp.147-151, 2017.
  6. Hongyu He, Yuan Liu, Binghui Yan, Xinnan Lin, Xueren Zheng, Shengdong Zhang, “Analytical Drain Current Model for Amorphous InGaZnO Thin-Film Transistors at Different Temperatures Considering both Deep and Tail Trap States,” IEEE Transactions on Electron Devices, vol.64, no.9, pp.3654-3660, 2017.
  7. Yi Ting Tseng, Po Hsun Chen, Ting Chang Chang, Kuan Chang Chang, Tsung Ming Tsai, Chih Cheng Shih, Hui Chun Huang, Cheng Chi Yang, Chih Yang Lin, Cheng-Hsien Wu,Hao Xuan Zheng, Shengdong Zhang, Simon M Sze, “Solving the Scaling Issue of Increasing Forming Voltage in Resistive Random Access Memory Using High-K Spacer Structure,”  Advanced Electronic Materials, vol.3, no.9, 2017.
  8. Yizhe Sun, Yibin Jiang, Huiren Peng, Jiangliu Wei, Shengdong Zhang and Shuming Chen, “Efficient Quantum Dot Light-Emitting Diodes with a Zn0.85Mg0.15O Interfacial Modification Layer,” Nanoscale, vol.9, no.26, pp. 8962-8969, 2017.
  9. Chih Yang Lin, Po Hsun Chen,Ting Chang Chang, Kuan Chang Chang, Sheng Dong Zhang, Tsung Ming Tsai, Chih Hung Pan, Min Chen Chen, Yu Ting Su, Yi Ting Tseng,Yao Feng Chen, Ying Chen Chang, Hui Chun Huang, Simon M Sze, “Attaining Resistive Switching Characteristics and Selector Properties By Varying Forming Polarities in a Single Hfo2-Based Rram Device with a Vanadium Electrode,” Nanoscale, vol.9, no.25, pp. 8586-8590, 2017.
  10. Ying Hsin Lu, Ting Chang Chang, Li Hui Chen, Yu Shan Lin, Xi Wen Liu, Jih Chien Liao, Chien Yu Lin, Chen Hsin Lien, Kuan Chang Chang, Sheng Dong Zhang, “Abnormal Recovery Phenomenon Induced By Hole Injection During Hot Carrier Degradation in SOI n-MOSFETs,” IEEE Electron Device Letters, vol.38, no.7, pp. 835-838, 2017.
  11. Po Yung Liao, Ting Chang Chang, Wan Ching Su, Bo Wei Chen, Li Hui Chen, Tien Yu Hsieh, Chung Yi Yang, Kuan Chang Chang, Sheng Dong Zhang, Yen Yu Huang, Hsi Ming Chang, Shin Chuan Chiang, “Impact of Repeated Uniaxial Mechanical Strain on Flexible a-IGZO Thin Film Transistors with Symmetric and Asymmetric Structures,” Applied Physics Letters, vol.110, no.26, 2017.
  12. Xiaoqin Du, XiaojingWu, Ting Chang Chang, Kuan Chang Chang, Chih Hung Pan, Cheng Hsien Wu, Yu Shuo Lin, Po Hsun Chen, Shengdong Zhang, Simon M Sze, “Recovery of Failed Resistive Switching Random Access Memory Devices By a Low-Temperature Supercritical Treatment,” Applied Physics Express, vol.10, no.6, 2017.
  13. Wen Yu, Dedong Han, Junchen Dong, Yingying Cong, Guodong Cui, Yi Wang, Shengdong Zhang, “AZO Thin Film Transistor Performance Enhancement by Capping an Aluminum Layer,” IEEE Transactions on Electron Devices, vol.64, no.5, pp.2228-2232,2017.
  14. Po Yung Liao, Ting Chang Chang, Yu Jia Chen, Wan Ching Su, Bo Wei Chen, Li Hui Chen, Tien Yu Hsieh, Chung Yi Yang, Kuan Chang Chang, Sheng Dong Zhang, Yen Yu Huang, Hsi Ming Chang, Shin Chuan Chiang, “The Effect of Device Electrode Geometry on Performance After Hot-Carrier Stress in Amorphous In-Ga-Zn-o Thin Film Transistors with Different Via-Contact Structures,” Applied Physics Letters, vol.110, no.20, 2017.
  15. Yingying Cong, Dedong Han, Junchen Dong, Shengdong Zhang, Xing Zhang, Yi Wang, “Fully Transparent High Performance Thin Film Transistors with Bilayer Ito/Al-Sn-Zn-o Channel Structures Fabricated On Glass Substrate,” Scientific Reports, vol. 7, 2017.
  16. Jun chen Dong, Wen Yu, Hui-jin Li, De dong Han, Sheng dong Zhang, Xing Zhang, Yi Wang, “Fabrication of High Performance Gadolinium-Aluminum-Zinc-Oxide Thin Film Transistors,” Chinese Journal of Liquid Crystals and Displays, vol.32, no.5, pp.339-343, 2017.
  17. Guodong Cui, Dedong Han, Junchen Dong, Yingying Cong, Xiaomi Zhang, Huijin Li, Wen Yu, Shengdong Zhang, Xing Zhang, Yi Wang, “Effects of Channel Structure Consisting of Zno/Al2o3 Multilayers on Thin-Film Transistors Fabricated By Atomic Layer Deposition,”  Japanese Journal of Applied Physics, vol.56, no.4, 2017.
  18. Longyan Wang, Yin Sun, Xintong Zhang, Lining Zhang, Shengdong Zhang, Mansun Chan, “Tunneling Contact IGZO TFTs with Reduced Saturation Voltages,”  Applied Physics Letters, vol.110, no.15, 2017.
  19. Xiaoliang Zhou, Yang Shao, Letao Zhang, Xiang Xiao, Dedong Han, Yi Wang, Shengdong Zhang, “Oxygen Adsorption Effect of Amorphous InGaZnO Thin-Film Transistors,” IEEE Electron Device Letters, vol.38, no.4, pp. 465-468, 2017.
  20. Songnan Du, Gongtan Li, Xuhong Cao, Yan Wang, Huiling Lu, Shengdong Zhang, Chuan Liu, Hang Zhou, “Oxide Semiconductor Phototransistor with Organolead Trihalide Perovskite Light Absorber,” Advanced Electronic Materials, vol.3, no.4, 2017.
  21. Letao Zhang, Xiaoliang Zhou, Huan Yang, Hongyu He, Longyan Wang, Min Zhang, Shengdong Zhang, “Nb Doped TiO2 Protected Back-Channel-Etched Amorphous InGaZnO Thin Film Transistors,” IEEE Electron Device Letters, vol.38, no.2, pp.213-216, 2017.
  22. Guodong Cui, Dedong Han, Yingying Cong, Junchen Dong, Wen Yu, Shengdong Zhang, Xing Zhang, Yi Wang, “High-Performance Ti-Doped Zinc Oxide TFTs With Double-Layer Gate Dielectric Fabricated at Low Temperature,” IEEE Electron Device Letters,  vol.38, no.2, pp. 207-209, 2017.
  23. Yan Wang, Raymond Fullon, Muharrem Acerce, Christopher E Petoukhoff, Jieun Yang, Chenggan Chen, Songnan Du, Sin Ki Lai, Shu Ping Lau, Damien Voiry, Deirdre O'Carroll, Gautam Gupta, Aditya D Mohite, Shengdong Zhang, Hang Zhou, Manish Chhowalla, “Solution-Processed MoS2 /Organolead Trihalide Perovskite Photodetectors,” Advanced materials, vol. 29, no. 4, 2017.

 

2016年期刊论文

  1. Hongyu He, Yuan Liu, Binghui Yan, Xinnan Lin, Xueren Zheng, Shengdong Zhang, “Analytical Drain Current Model for Organic Thin-Film Transistors at Different Temperatures Considering Both Deep and Tail Trap States,” IEEE Transactions on Electron Devices, vol.63, no.11, pp. 4423-4431, 2016.
  2. Wei Deng, Xiang Xiao, Yang Shao, Zhen Song, Chia-Yu Lee, Alan Lien, Shengdong Zhang,“A Back-Channel-Etched Amorphous InGaZnO Thin-Film Transistor Technology With Al-Doped ZnO as Source/Drain and Pixel Electrodes,” IEEE Transactions on Electron Devices, vol.63, no. 5, pp. 2205-2209, 2016.
  3. Yi Zhang, Dedong Han, Lingling Huang, Junchen Dong, Xing Zhang, Shengdong Zhang, Yi Wang, “Sn-Doped ZnO Thin-Film Transistors with AZO, TZO and Al Heterojunction Source/Drain Contacts,” Electronics Letters, vol.52, no. 4, pp. 302-303, 2016.
  4. Yingying Cong, Dedong Han, Junchen Dong, Wen Yu, Xiaomi Zhang, Guodong Cui, Xing Zhang, Shengdong Zhang, Yi Wang, “High-Performance Fully Transparent Al-Sn-Zn-O Thin-Film Transistors Using Double-Channel Structures,” Electronics Letters, vol.52, no. 12, pp. 1069-1070, 2016.
  5. Yingying Cong, Dedong Han, Xiaoliang Zhou, Shengdong Zhang, Xing Zhang, Yi Wang, “High-Performance Al-Sn-Zn-O Thin-Film Transistor with a Quasi-Double-Channel Structure,” IEEE Electron Device Letters, vol.37, no. 1, pp. 53-56, 2016.
  6. Xiang Liu, Hehe Hu, Ce Ning, Guangliang Shang, Wei Yang, Ke Wang, Xinhong Lu, Woobong Lee, Gang Wang, Jianshe Xue, Jung Mok Jun, Shengdong Zhang, “Investigation Into Sand Mura Effects of a-IGZO TFT LCDs,” Microelectronics Reliability, vol. 63, pp. 148-151, 2016.
  7. Cuicui Wang, Zhijin Hu, Xin He, Congwei Liao, Shengdong Zhang, “One Gate Diode-Connected Dual-Gate a-IGZO TFT Driven Pixel Circuit for Active Matrix Organic Light-Emitting Diode Displays,” IEEE Transactions on Electron Devices, vol. 63, no. 9, pp. 3800-3803, 2016.
  8. Xin Xu, Letao Zhang, Yang Shao, Zheyuan Chen, Yong Le, Shengdong Zhang, “Amorphous Indium Tin Oxide Thin-Film Transistors Fabricated by Cosputtering Technique,” IEEE Transactions on Electron Devices, vol. 63, no. 3, pp. 1072-1077, 2016.
  9. Yong Le, Yang Shao, Xiang Xiao, Xin Xu, Shengdong Zhang, “Indium-Tin-Oxide Thin-Film Transistors with in Situ Anodized Ta2O5 Passivation Layer,” IEEE Electron Device Letters, vol. 37, no. 5, pp. 603-606, 2016.
  10. Letao Zhang, Xiang Xiao, Xiaoliang Zhou, Hongyu He, Xin Xu, Qingping Lin, Hang Zhou, Shengdong Zhang,“Structure and Stoichiometry Evolution of Sputtered Nb Doped TiO2 Films Induced By O2 Pressure Variation During Postannealing Process, Journal of Vacuum Science & Technology A, vol. 34, no. 5, 2016.
  11. Yan Wang, Zhonggao Xia, Songnan Du, Fang Yuan, Zigang Li, Zhenjun Li, Qing Dai, Haolan Wang, Shiqiang Luo, Shengdong Zhang , Hang Zhou, “Solution-Processed Photodetectors Based on Organic-Inorganic Hybrid Perovskite and Nanocrystalline Graphite,”Nanotechnology, vol. 27, no. 17, 2016.

 

2015年期刊论文

  1. Huiling Lu, Xiaobin Bi, Shengdong Zhang, Hang Zhou, “Ultraviolet Detecting Properties of Amorphous MgInO Thin Film Phototransistors,” Semiconductor Science and Technology, vol. 30, no.12, 2015.
  2. Zhijin Hu, Congwei Liao, Wenjie Li, Limei Zeng, Chang-Yeh Lee, Shengdong Zhang, “Integrated a-Si: H Gate Driver With Low-Level Holding TFTs Biased Under Bipolar Pulses,” IEEE Transactions on Electron Devices, vol. 62, no.12, pp.4044-4050, 2015.
  3. Zhijin Hu, Lisa Ling Wang, Congwei Liao, Limei Zeng, Chang-Yeh Lee, Alan Lien, Shengdong Zhang, “Threshold Voltage Shift Effect of a-Si:H TFTs Under Bipolar Pulse Bias,” IEEE Transactions on Electron Devices, vol. 62, no.12, pp. 4037-4043, 2015.
  4. Dedong Han, Suoming Zhang, Feilong Zhao, Junchen Dong, Yingying Cong, Shengdong Zhang, Xin Zhang, Yi Wang , “Transparent Gallium Doped Zinc Oxide Thin-Film Transistors Fabricated on Glass Substrate ,” Thin Solid Films vol. 594, pp. 266-269, 2015.
  5. Lingling Huang, Dedong Han, Yi Zhang, Pan Shi, Wen Yu, Guodong Cui, Yingying Cong, Junchen Dong, Shengdong Zhang, Xing Zhang , Yi Wang, “High Mobility Transparent Flexible Nickel-doped Zinc Oxide Thin-Film Transistors with Small Subthreshold Swing,” Electronics Letters, vol. 51, no.20, 2015.
  6. Hongyu He, Xueren Zheng, Shengdong Zhang, “Above-Threshold 1/f Noise Expression for Amorphous InGaZnO Thin-Film Transistors Considering Series Resistance Noise,” IEEE Electron Device Letters, vol. 36, no.10, pp. 1056-1059, 2015.
  7. Xiang Liu, Lisa Ling Wang, Hehe Hu, Xinhong Lu, Ke Wang, Gang Wang, Shengdong Zhang, “Performance and Stability Improvements of Back-Channel-Etched Amorphous Indium-Gallium-Zinc Thin-Film-Transistors by CF4+O-2 Plasma Treatment,” IEEE Electron Device Letters, vol. 36, no.9, pp. 911-913, 2015.
  8. Wen Yu, Dedong Han, Pan Shi, Yingying Cong, Yi Zhang, Junchen Dong, Xiaoliang Zhou, Lingling Huang, Guodong Cui, Shengdong Zhang, Xing Zhang, Yi Wang, “Effects of Substrate Temperature on Performance of Calcium-Doped Zinc Oxide TFTs,” Electronics Letters, vol. 51, no.16, pp. 1286-1287, 2015.
  9. Wei Deng, Xiang Xiao, Xin He, Chia-Yu Lee, Shengdong Zhang, “Comparative Study of a-IGZO TFTs with Direct Current (DC) and Radio Frequency (RF) Sputtered Channel Layers,” Journal of Society of Information Display, vol.23, no.7, pp. 306-312, 2015.
  10. Cuicui Wang, Chuanli Leng, Longyan Wang, Wengao Lu, Shengdong Zhang, “An Accurate and Fast Current-Biased Voltage-Programmed AMOLED Pixel Circuit With OLED Biased in AC Mode,” Journal of Display Technology, vol. 11, no.7, pp. 615-619, 2015.
  11. Dedong Han, Fuqing Huang, Yingying Cong, Lingling Huang, Yi Zhang, Pan Shi, Wen Yu, Xiaoliang Zhou, Lifeng Liu, Shengdong Zhang, Xing Zhang, Yi Wang, “Fully Transparent Flexible Dual-Layer Channel Ga-doped ZnO Thin-Film Transistors on Plastic Substrates,” Electronics Letters, vol. 51, no.14, pp. 1069-1070, 2015.
  12. Lisa Ling Wang, Hongyu He, Xiang Liu,Wei Deng, Shengdong Zhang, “Charge Trapping Model for Temporal Threshold Voltage Shift in a-IGZO TFTs Considering Variations of Carrier Density in Channel and Electric Field in Gate Insulator,” IEEE Transactions On Electron Devices, vol. 62, no. 7, pp. 2219-2225, 2015.
  13. Yang Shao, Xiang Xiao, Xin He, Wei Deng, Shengdong Zhang, “Low Voltage a-InGaZnO Thin-Film Transistors with Anodized Thin HfO2 Gate Dielectric,” IEEE Electron Device Letters, vol.36, no.6, pp. 573-575, 2015.
  14. Jing Wu, Dedong Han, Yingying Cong, Nannan Zhao, Zhuofa Chen, Junchen Dong, Feilong Zhao, Shengdong Zhang, Lifeng Liu, Xing Zhang, Yi Wang, “Effects of Channel Thickness on Characteristics of HZO-TFTs fabricated at Low Temperature,” Electronics Letters, vol.51, no.11, 2015.
  15. Nannan Zhao, Dedong Han, Zhuofa Chen, Jing Wu, Yingying Cong, Junchen Dong, Feilong Zhao, Shengdong Zhang, Zhang, Xing Zhang, Yi Wang, “High Performance Ti-Doped ZnO TFTs With AZO/TZO Heterojunction S/D Contacts,” Journal of Display Technology, vol.11, no.5, pp. 412-416, 2015.
  16. Yingying Cong, Dedong Han, Jing Wu, Nannan Zhao, Zhuofa Chen, Feilong Zhao, Junchen Dong, Shengdong Zhang, Xing Zhang, Yi Wang, “Studies on Fully Transparent Al-Sn-Zn-O Thin-Film Transistors Fabricated on Glass at Low Temperature,” Japanese Journal of Applied Physics, vol.54, no.4, 2015.
  17. Yan Wang, Zhonggao Xia, Jun Liang, Xinwei Wang, Yiming Liu, Chuan Liu, Shengdong Zhang and Hang Zhou, “Towards Printed Perovskite Solar Cells with Cuprous Oxide Hole Transporting Layers: a Theoretical Design,” Semiconductor Science and Technology, vol.30, no.5, 2015.
  18. LongYan Wang, Lei Sun, DeDong Han, Yi Wang, ManSun Chan, ShengDong Zhang, “Self-Aligned Offset Gate Poly-Si Tfts Using Photoresist Trimming Technology,” Science China-Information Sciences, vol.58, no.4, 2015.
  19. Zhuofa Chen, Dedong Han, Nannan Zhao, Jing Wu, Yingying Cong, Junchen Dong, Feilong Zhao, Shengdong Zhang, Xing Zhang, Yi Wang, Lifeng Liu, “Performance Improvement of Tin-Doped Zinc Oxide Thin-Film Transistor By Novel Channel Modulation Layer of Indium Tin Oxide/Tin Zinc Oxide,” Japanese Journal of Applied Physics, vol.54, no.4, 2015.
  20. Lingling Huang, Dedong Han, Zhuofa Chen, Yingying Cong, Jing Wu, Nannan Zhao, Junchen Dong, Feilong Zhao, Lifeng Liu, Shengdong Zhang, “Flexible Nickel-Doped Zinc Oxide Thin-Film Transistors Fabricated on Plastic Substrates at Low Temperature,” Japanese Journal of Applied Physics, vol.54, no.4, 2015.
  21. Jingwen Han, Lei Sun, Hao Xu, Yibo Zhang, Shengdong Zhang, Yi Wang, “Impact of Gate Coupling and Misalignment on Performance of Double-Gate Organic Thin Film Transistors,” Japanese Journal of Applied Physics,vol.54, no.4, 2015.
  22. Xiang Xiao, Yang Shao, Xin He, Wei Deng, Letao Zhang and Shengdong Zhang, “Back Channel Anodization Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors Process,” IEEE Electron Device Letters , vol.36, no.4, pp. 357-359, 2015.
  23. Hao Xu, Lei Sun, Yibo Zhang, Jingwen Han, Yi Wang, Shengdong Zhang, “New Concept of Planar Germanium MOSFET with Stacked Germanide Layers At Source/Drain,” Japanese Journal of Applied Physics, vol.54, no.4, 2015.
  24. Jianhua Li, Jian Wang, Letao Zhang, Shengdong Zhang, “Nanocrystalline Sno2 Thin Films Prepared by Anodization of Sputtered Sn Thin Film,” Journal of Vacuum Science & Technology A, vol.33, no.3, 2015.
  25. Hongyu He, Xueren Zheng and Shengdong Zhang, “1/f Noise Expressions for Amorphous InGaZnO TFTs Considering Mobility Power-Law Parameter in Above-Threshold Regime,” IEEE Electron Device Letters, vol.36, no. 2, pp. 156-158, 2015.
  26. Congwei Liao, Zhijin Hu, David Dai, Smart Chung, T. S. Jen, Shengdong Zhang, “A Compact Bi-Direction Scannable a-Si:H TFT Gate Driver,” Journal of Display Technology, vol.11, no.1, pp. 3-5, 2015.
  27. Zhuofa Chen, Dedong Han, Nannan Zhao, Yingying Cong, Shengdong Zhang, Xing Zhang, Yi Wang, “Performance Enhancement of Fully Transparent Tin-Doped Zinc Oxide Thin-Film Transistors Fabricated by Sputtering at Low Temperature,” Electronics Letters, vol.51, no.3, pp. 272-274, 2015.
  28. Yi-Bo Zhang, Lei Sun, Hao Xu, Jing-Wen Han, Yi Wang, Sheng-Dong Zhang, “Comparative Study of Silicon Nanowire Transistors with Triangular-Shaped Cross Sections,” Japanese Journal of Applied Physics, vol.54, no.4, 2015.

 

2014年期刊论文

  1. Xin He, Xiang Xiao, Yang Shao, Wei Deng, Chuanli Leng, Shengdong Zhang, “A Multi-V th a-IGZO TFT Technology Using Anodization to Selectively Reduce Oxygen Vacancy Concentration in Channel Regions,” IEEE Electron Device Letters , vol. 35, no.12, pp. 1248-1250, 2014.
  2. Jun Liang, YanTao Su, Qinxian Lin, Hang Zhou, ShengDong Zhang, Yanli Pei, RuiQin Hu, “Forming-Free Resistive Switching Memory Based on LiFePO 4 Nano-Particle Embedded in Conjugated Polymer,” Semiconductor Science and Technology, vol. 29, no.11, 2014.
  3. Xiang Liu, Lisa Ling Wang, Ce Ning, Hehe Hu, Wei Yang, Ke Wang, Seong Yeol Yoo, Shengdong Zhang, “Gate Bias Stress-Induced Threshold Voltage Shift Effect of a-IGZO TFTs with Cu Gate,” IEEE Transactions on Electron Devices, vol.61, no.12, pp. 4299-4303, 2014.
  4. Zhuofa Chen, Dedong Han, Nannan Zhao, Yingying Cong, Jing Wu, Lingling Huang, Junchen Dong, Feilong Zhao, Lifeng Liu, Shengdong Zhang, Xing Zhang, Yi Wang, “High-Performance Full Transparent Tin-Doped Zinc Oxide Thin-Film Transistors Fabricated on Glass at Low Temperatures,” Electronics Letters, vol.50, no.20,pp. 1463-1464, 2014.
  5. Xin He,Longyan Wang, Xiang Xiao, Wei Deng, Letao Zhang, Mansun Chan, Shengdong Zhang,  “Implementation of Fully Self-Aligned Homojunction Double-Gate a-IGZO TFTs,” IEEE Electron Device Letters, vol.35, no.9, pp. 927-929, 2014
  6. Chuanli Leng, Cuicui Wang, Longyan Wang, Shengdong Zhang, “Separate Frame Compensated Current-Biased Voltage-Programmed Active Matrix Organic Light-Emitting Diode Pixel,” IEEE Electron Device Letters, vol. 35, no. 8, pp. 847-849, 2014.
  7. Lisa Ling Wang, Tony Chi Liu, Yuying Cai, Shengdong Zhang, “Thin-Film Transistor Vth Shift Model Based on Kinetics of Electron Transfer in Gate Dielectric,” IEEE Transactions on Electron Devices, vol.61, no.5, pp. 1436-1443, 2014.
  8. Longyan Wang, Lei Sun, Dedong Han, Yi Wang, Mansun Chan, Shengdong Zhang, “A Hybrid a-Si and Poly-Si TFTs Technology for AMOLED Pixel Circuits,” Journal of Display Technology, vol.10, no.4, pp. 317-320, 2014.
  9. Yu Tian, Dedong Han, Suoming Zhang, Fuqing Huang, Dongfang Shan, Yingying Cong, Jian Cai, Liangliang Wang, Shengdong Zhang, Xing Zhang, Yi Wang, “High-performance Dual-layer Channel Indium Gallium Zinc Oxide Thin-film Transistors Fabricated in Fifferent Oxygen Contents at Low Temperature,” Japanese Journal of Applied Physics, vol.53, no.4, 2014.
  10. Dongfang Shan, Dedong Han, Fuqing Huang, Suoming Zhang, Shengdong Zhang, Xing Zhang, Yi Wang, “Fabrication and Characteristics of High-performance and High-stability Aluminum-doped Zinc oxide Thin-Film Transistors,” Japanese Journal of Applied Physics, vol.53, no.4, 2014.
  11. Zhuofa Chen, Dedong Han, Nannan Zhao, Yingying Cong, Shengdong Zhang, Xing Zhang, Yi Wang,“High-performance Dual-layer Channel ITO/TZO TFTs Fabricated on Glass Substrate,” Electronics Letters, vol. 50, no. 8, pp. 633-634, 2014.
  12. Yang Shao, Xiang Xiao, Longyan Wang, Yang Liu, Shengdong Zhang*, “Anodized ITO Thin-Film Transistors,” Advanced Functional Materials, vol.24, no.26, pp.4170-4175, 2014.
  13. Yu-Qian Xia, Lei Sun, Hao Xu, Jing-Wen Han, Yi-Bo Zhang, Yi Wang, Sheng-Dong Zhang, “Magnetic Properties of Co-Doped TiO2 Films Grown on TiN Buffered Silicon Substrates,” Chinese Physics Letters, vol. 31, no. 2, 2014.

 

2013年期刊论文

  1. Jianke Yao, Li Gong, Lei Xie, Shengdong Zhang, “Comparison of The Electrical and Optical Properties of Direct Current and Radio Frequency Sputtered Amorphous Indium Gallium Zinc Oxide Films,”  Thin solid films, vol. 527, pp. 21-25, 2013.
  2. Lisa L. Wang, James B. Kuo, Shengdong Zhang, “Analytical Drain Current Model for Poly-Si Thin-Film Transistors Biased in Strong Inversion Considering Degradation of Tail States at Grain Boundary,” IEEE Transactions on Electron Devices, vol. 60, no. 3, pp. 1122-1127, 2013.
  3. Chuanli Leng, Longyan Wang, Shengdong Zhang, “Two-Transistor Current-Biased Voltage-Programmed AM-OLED Pixel,” IEEE Electron Device Letters, vol. 34, no. 10,pp. 1262-1264, 2013.
  4. Xiang Xiao, Wei Deng, Xin He, Shengdong Zhang, “a-IGZO TFTs With Inductively Coupled Plasma Chemical Vapor Deposited SiOx Gate Dielectric,” IEEE Transactions on Electron Devices, vol. 60, no. 8,pp. 2687-2690, 2013.
  5. Wei Wang, Dedong Han, Jian Cai, Youfeng Geng, Liangliang Wang, Longyan Wang, Shengdong Zhang, “Fully Transparent Al-Doped ZnO Thin-Film Transistors on Flexible Plastic Substrates,” Japanese Journal of Applied Physics,” vol. 52, no. 4, 2013.
  6. Congwei Liao, Changde He, Tao Chen, David Dai, Smart Chung, T. S. Jen, Shengdong Zhang, “Design of Integrated Amorphous-Silicon Thin-Film Transistor Gate Driver,” Journal of Display Technology, vol. 9, no. 1, pp. 7-16, 2013.
  7. Jian Cai, Dedong Han, Youfeng Geng, Wei Wang, Liangliang Wang, Shengdong Zhang, Yi Wang, “High-Performance Transparent AZO TFTs Fabricated on Glass Substrate,” IEEE Transactions on Electron Devices, vol. 60, no. 7, pp. 2432-2435, 2013.
  8. Dedong Han, Wei Wang, Jian Cai, Liangliang Wang, Yicheng Ren, Yi Wang and Shengdong Zhang, “Flexible Thin-Film Transistors on Plastic Substrate at Room Temperature,” Journal of Nanoscience and Nanotechnology, vol. 13, no. 7, pp. 5154-5157, 2013.
  9. Jian Cai, Dedong Han, Youfeng Geng, Wei Wang, Liangliang Wang, Yu Tian, Lixun Qian, Xing Zhang, Shengdong Zhang, Yi Wang, “Effect of O2 Incorporation During the Channel Fabrication Process on Aluminum-Doped Zinc Oxide Thin-Film Transistor Characteristics,” Japanese Journal of Applied Physics, vol. 52, no. 4, 2013.
  10. Xiang Xiao, Wei Deng, Shipeng Chi, Yang Shao, Xin He, Longyan Wang, Shengdong Zhang, “Effect of O2 Flow Rate During Channel Layer Deposition on Negative Gate Bias Stress-Induced Vth Shift of a-IGZO TFTs,” IEEE Transactions on Electron Devices, vol. 60, no. 12, pp. 4159-4164, 2013.

 

2012年期刊论文

  1. DeDong Han, Yi Wang, ShengDong Zhang, Lei Sun, Ruqi Han,Satoru Matsumoto and Yuji Ino, “Influence of Sputtering Power on Properties of Zno Thin Films Fabricated by Rf Sputtering in Room Temperature,” Science China Information Sciences, vol. 55, no.4, pp. 951-955, 2012.
  2. DeDong Han, Yi Wang, ShengDong Zhang, Lei Sun, Ruqi Han, Satoru Matsumoto, Yuji Ino, “Fabrication and characteristics of ZnO thin films deposited by RF sputtering on plastic substrates for flexible display,” Science China-Information Sciences, vol. 55, no.6, pp. 1441-1445, 2012.
  3. Shaojuan Li, Xin He, Dedong Han, Lei Sun, Yi Wang, Ruqi Han, Mansun Chan, Shengdong Zhang , “Reactive Radiofrequency Sputtering-Deposited Nanocrystalline ZnO Thin-Film Transistors,” Chinese Physics Letters, vol. 29, no.1, pp. 501-504, 2012.
  4. Tony C. Liu, James B. Kuo, Shengdong Zhang*, “Floating-Body Kink-Effect-Related Parasitic Bipolar Transistor Behavior in Poly-Si TFT,” IEEE Electron Device Letters, vol. 33, no.6, pp. 842 – 844, 2012.
  5. Tony C. Liu, James B. Kuo, Shengdong Zhang, “A Closed-Form Analytical Transient Response Model for On-Chip Distortionless Interconnect,” IEEE Transactions on Electron Devices, vol. 59, no. 12, pp. 3186-3192, 2012.
  6. Shaojuan Li, Lei Sun, Dedong Han, Yi Wang, Ruqi Han, Shengdong Zhang, “Stability of Zinc Oxide Thin-Film Transistors,” ECS Transactions, vol. 44, no. 1, pp. 57-62, 2012.
  7. Jianke Yao, Shengdong Zhang, Li Gong, “Band Offsets in ZrO2/InGaZnO4 Heterojunction,” Applied physics letter, vol. 101, no. 9, 2012.
  8. Shaojuan Li, Yong Cai, Dedong Han, Yi Wang, Lei Sun, Mansun Chan, Shengdong Zhang, “Low-Temperature ZnO TFT Fabricated by Reactive Sputtering of Metallic Zinc Target,” IEEE Transactions on Electron Devices, vol. 59,no. 9, pp. 2555-2558, 2012.
  9. Congwei Liao, Changde He, Tao Chen, David Dai, Smart Chung, T. S. Jen, Shengdong Zhang, “Implementation of an a-Si:H TFT Gate Driver Using a Five-Transistor Integrated Approach,” IEEE Transactions on Electron Devices,  vol. 59, no.8, pp. 2142-2148, 2012.

 

2011年期刊论文

  1. .Dapeng Zhou, Mingxiang Wang, Shengdong Zhang, “Degradation of Amorphous Silicon Thin Film Transistors Under Negative Gate Bias Stress,” IEEE Transactions on Electron Devices, vol. 58, no.10, pp. 3422-3427, 2011.
  2. Dedong Han,Yi Wang, Shengdong Zhang,Lei Sun,Ruqi Han, Matsumoto S., Ino Y., “Influence of sputtering power on properties of ZnO thin films fabricated by RF sputtering in room temperature,”Science China-Information Sciences, 2011.54: doi: 10.1007/s11432-011- 4347.

 

2010年期刊论文

  1. Wei Liu, Wei Li, Peng Ren, Chinglong Lin, Shengdong Zhang* and Yangyuan Wang, “A PVT Tolerant 10 to 500 MHz All-Digital Phase-Locked Loop with Coupled TDC and DCO,” IEEE Journal of Solid-State Circuits, vol.45,no.2, pp. 314-32, 2010.
  2. DeDong Han, Yi Wang, ShengDong Zhang, Lei Sun, JinFeng Kang, XiaoYan Liu, Gang Du, LiFeng Liu, RuQi Han, “Fabrication and Characteristics of ZnO Mos Capacitors with High-K HfO2 Gate Dielectrics, Science China-Technological Sciences, vol.53，no.9, pp. 2333-2336, 2010.
  3. Wei Liu, Wei Li, Peng Ren, Qinglong Lin, Shengdong Zhang* and Yangyuan Wang, “An 11-Bit and 39 ps Resolution Time-to-Digital Converter for ADPLL in Digital Television,” International Journal of Electronics , vol.97,no.4，pp.381-388, 2010.

 

2009年及以前期刊论文

  1. Wei Liu, Wei Li, Peng Ren, Qinglong Lin, Shengdong Zhang and Yangyuan Wang, “A time-domain digitally controlled oscillator composed of a free running ring oscillator and flying-adder,”  Chinese journal of Semiconductor, vol. 30, no.9, 2009.
  2. Wei Ke, Xu Han, Dingyu Li, X. Wang, T. Zhang, Ruqi Han and Shengdong Zhang, “Recessed source/drain for Sub-50 nm UTB SOI MOSFET,” Semiconductor Science and Technology, vol. 22, no. 5,  pp. 577 -583, 2007...
  3. D.Y. Li, Lei Sun, Shengdong Zhang, et al.，“Schottky barrier MOSFET structure with silicide source/drain on buried metal,” CHINESE PHYSICS 16 (1): 240-244 JAN 2007.
  4. Wei Ke, Xu Han, B. Xu, X. Liu, X. Wang, T. Zhang, R. Han and Shengdong Zhang, “Source/drain series resistances of nanoscale ultra-thin-body SOI MOSFETs with undoped or very-low-doped channel regions,” Semiconductor Science and Technology, vol. 21, no. 10,  pp. 1416-1421, 2006.
  5. L. Sun , D. Y. Li, Shengdong Zhang, Xiaoyan Liu, Yi Wang and Ruqi Han,“A planar asymmetric Schottky barrier source/drain structure for nano-scale MOSFETs,” Semiconductor Science and Technology, vol. 21, no. 5, pp. 608-611, 2006.
  6. Xin Lin, Shengdong Zhang, X. Wu and Mansun Chan, “Local Clustering 3-D Stacked CMOS Technology for Interconnect Loading Reduction,” IEEE Trans. on Electron Devices, vol. 53, pp. 1405-1410, no. 6, 2006.
  7. X. Wu, P. C. H. Chan, Shengdong Zhang C. Feng, and M. Chan,“A Three-Dimensional Stacked Fin-CMOS Technology for High-Density ULSI Circuits”，IEEE Trans. on Electron Devices, vol. 52, pp. 1998-2003, no. 9, 2005...
  8. X. Wu, P. C. H. Chan, Shengdong Zhang, C. Feng, and M. Chan, “Stacked 3-D Fin-CMOS Technology,” IEEE Electron Device Letters, Vol. 26, No. 6, pp. 416-418, June 2005.
  9. X. Lin, C. Feng, Shengdong Zhang, W.-H. Ho and M. Chan, “Characterization of double gate MOSFETs fabricated by a simple method on a recrystallized silicon film,” Solid-State Electronics, Vol. 48, No. 12, pp. 2315-2319, December 2004.
  10. Z. Zhang, Shengdong Zhang and M. Chan, “Self-Align Recessed Source Drain Ultra-thin Body SOI MOSFET,” IEEE Electron Device Letters, Vol. 25, No. 11, pp. 740 – 742, 2004.
  11. .Shengdong Zhang, Ruqi Han, X. Lin, X. Wu, and M. Chan, “A Stacked CMOS Technology on SOI Substrate,” IEEE Electron Device Letters, Vol. 25, No. 9, pp. 661-663, 2004.
  12. Z. Zhang, Shengdong Zhang, C. Feng, M. Chan, “Analysis and Optimization of SDOI Structure to Maximize the Intrinsic Performance o Extremely Scaled MOSFETs,” IEEE Trans. on Electron Devices, vol.51, pp. 1095-1100, no. 7, 2004.
  13. .Shengdong Zhang, Ruqi Han, and Mansun Chan,“A Self-Aligned gate-all-Around MOS transistor on Single Grain Silicon,” Electrochemical and Solid-State Letters，vol. 7, no. 4, pp. G59-G61, 2004.
  14. .Zhikuan Zhang, Shengdong Zhang, Chuguang Feng and Mansun Chan, “An elevated source/drain-on-insulator structure to maximize the intrinsic performance   extremely scaled MOSFETs,” Solid-State Electronics, vol. 47, no. 10, pp. 1829-1833, 2003.
  15. Shengdong Zhang, Ruqi Han, Xinnan Lin and Mansun Chan, “An Electrically separable self-aligned double-gate MOS for dynamic threshold voltage application,” IEEE Tran. on Electron Devices, vol.50, no.11, pp. 2297-2300, 2003.
  16. Shengdong Zhang, Allain Chan, Ruqi Han, and Mansun Chan, “A Viable Self-Aligned Bottom-Gate MOS Transistor Technology for Deep Sub-Micron 3-D SRAM,” IEEE Trans. on Electron Devices, vol.50, pp. 1952-1960, no. 9, 2003.
  17. Shengdong Zhang, Ruqi Han, Zhikuan Zhang, Ru Huang, Ping K. Ko, and Mansun Chan, “Implementation of Fully Self-aligned Bottom-gate MOS Transistor,” IEEE Electron Device Letters, vol. 23, no. 10, 2002, pp. 618-620.
  18. Shengdong Zhang, Ruqi Han, Johnny K.O. Sin and Mansun Chan, “Reduction of off-current in self-aligned double-gate TFT with mask-free symmetric LDD,” IEEE Trans. on Electron Devices, August 2002, vol. 49, no. 8, pp. 1490-1492.
  19. S. Jagar, C. F. Cheng, Shengdong. Zhang, H. Wang, M. C. Poon, C. W. Kok, and M. Chan, “A SPICE Model for Thin-Film Transistors Fabricated on Grain-Enhanced Polysilicon Film,” IEEE Trans. on Electron Devices, Vol. 50, No. 4, pp. 1103-1108, April 2003.
  20. Shengdong Zhang, R. Han, J. K. O. Sin, and M. Chan,“Implementation and Characterization of Self-Aligned Double-Gate TFT with Thin Channe and Thick Source/Drain”，IEEE Trans. on Electron Devices, May 2002, Vol. 49, No. 5, pp. 718-724.
  21. Shengdong Zhang, Ruqi Han, Mansun Chan,“A Novel Self-Aligned Double Gate TFT Technology,” IEEE Electron Device Letters, vol. 22, no. 11, pp. 530-532, June 2001 .
  22. Shengdong Zhang, Ruqi Han, Mansun Chan, “A Novel Self-Aligned Bottom Gate TFT with in situ LDD,” IEEE Electron Device Letters, vol. 22, no. 8, June 2001 pp. 393-395.
  23. Shengdong Zhang, Chunxiang Zhu, Sin JKO, Li JN and Mok PKT, “Ultra-thin elevated channel poly-Si TFT technology for fully-integrated AMLCD system on glass,” IEEE Trans. on Electron Devices, vol. 47, no. 3, March 2000, pp. 569-75.
  24. Shengdong Zhang, Chunxiang Zhu, Sin JKO and Mok PKT, “A novel ultrathin elevated channel low-temperature poly-Si TFT,” IEEE Electron Device Letters, vol. 20, no. 11, Nov. 1999, pp.569-71.
  25. Shengdong Zhang, Sin JKO, Lai TML and Ko PK, “Numerical modeling of linear doping profiles for high-voltage thin-film SOI devices,” IEEE Trans. on Electron Devices, vol. 46, no. 5, 1999, pp.1036-41.
  26. Zhang Shengdong, Sin JKO,“A novel self-aligned bidirectional MIM diode with transparent junctions for AM-LCD’s”，IEEE Electron Device Letters, vol.19, no.6, pp. 192-194, June 1998.
  27. (27).Shengdong Zhang, Han Ruqi, Liu Xiaoyan, Guan Xudong, Li Ting and Zhang Dachen, “ A novel sub-50 nm p-Si gate patterning technology,” Bandaoti Xubao/Chinese journal of Semiconductor, vol. 22, no. 5, 2001.
  28. 张盛东，韩汝琦等，“漂移区为线形掺杂的高压薄膜SOI器件的研制”，电子学报，Vol. 20, No. 2, 2001...
  29. Shengdong Zhang, Han Ruqi, Guan Xudong, “Ultra-thin Channel Poly-Si TFT Technology,” Bandaoti Xubao/ Chinese journal of Semiconductor, no. 4, 2000.
  30. Shengdong Zhang, “An investigation on level shift characteristics for pixel electrode voltage of a-Si TFT LCD,” Acta Electronica Sinica, vol. 22, no. 8, Aug. 1994, pp. 59-64

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