Thin Film Transistor and Advanced Display Lab

Conferences

Conference papers in 2015

(1) Guoying Wang, Zhen Song, Xiang Xiao and Shengdong Zhang, “Effects of Over-Etching Time on the Characteristics of Amorphous IGZO Thin-Film Transistors with Back-Channel-Etch Structure,” AMFPD’15, pp.107-110, July1-3, 2015, Kyoto, Japan.
(2) Pan Shi, Dedong Han, Yi Zhang, Wen Yu, Lingling Huang, Yingying Cong,Xiaoliang Zhou, Zhuofa Chen, Junchen Dong, Shengdong Zhang, Xing Zhang, and Yi Wang,"Fully-transparent Mo-doped ZnO TFTs Fabricated in Different Oxygen Partial Pressure at Low Temperature," AM-FPD Symposium Digest of Technical Papers,pp111-114.,July 1-4,2015,Kyoto,Japan.
(3) Xin He, Ling Wang, Wei Deng, Xiang Xiao, Letao Zhang, Chuanli Leng, Mansun Chan, and Shengdong Zhang, “Improved Electrical Stability of Double-Gate a-IGZO TFTs,” SID Symposium Digest of Technical Papers, pp.1151-1155, June 2–5, 2015, San Jose, California, USA.
(4) Congwei Liao, Zhijin Hu, Junmei Li, Wenjie Li, Shijie Cao, and Shengdong Zhang, “A Simple Low Temperature Workable a-Si:H TFT Integrated Gate Driver on Array,” SID Symposium Digest of Technical Papers, pp.1316-1320, June 2–5, 2015, San Jose, California, USA.
(5) Chuanli Leng, Xin He, Hing-Mo Lam, Xue Meng, Cuicui Wang, Yuan-chun Wu, Kai-Yuan Ko, and Shengdong Zhang, “Row-Division Driving Scheme for Active Matrix OLED Displays,” SID Symposium Digest of Technical Papers, pp.1308-1312, June 2–5, 2015, San Jose, California, USA.
(6) Pan Shi, Dedong Han, Wen Yu, Zhuofa Chen, Nannan Zhao, Feilong Zhao, Jing Wu, Junchen Dong, Yingying Cong, Lingling Huang, Yi Zhang, Shengdong Zhang, Xing Zhang and Yi Wang, “The Research of Dual-Layer Channel ITO/MZO Thin Film Transistors Fabricated on Glass at Low Temperature,” SID Symposium Digest of Technical Papers, pp.1176-1180, June 2–5, 2015, San Jose, California, USA.
(7) Nannan Zhao, Dedong Han, Zhuofa Chen, Jing Wu, Yingying Cong, Junchen Dong, Feilong Zhao, Shengdong Zhang, Xing Zhang, Yi Wang, “High-performance fully transparent Ti-Zn-O thin film transistors,” VLSI Technology, Systems and Application (VLSI-TSA), 2015 International Symposium on, pp. 1 – 2, 27-29 April 2015, Hsinchu, Taiwan.

Conference papers in 2014

(1) W. Liu, P. Jin, Shengdong Zhang, “Reactive wetting and dewetting of liquid SnPb solder on the butterfly pattern,” 15th International Conference on Electronic Packaging Technology (ICEPT), pp.159-62, 12-15 Aug. 2014 Chengdu China.
(2) W. Liu, P. Jin, Shengdong Zhang, “Reactive spreading and dewetting of liquid SnPb solder on Cu thin films,” 15th International Conference on Electronic Packaging Technology (ICEPT), pp.1442-5, 12-15 Aug. 2014 Chengdu China.
(3) Hui Huang, Qian Li, “Effective pulse compression in photonic crystal fibers with linearly varying dispersion and nonlinearity,” 2014 Nonlinear Photonics (NP) Topical Meeting, 27-31 July 2014, Barcelona, Spain, JTU3A.22.
(4) Hui Huang, Qian Li, “Efficient pulse compression in nonlinear fibers with linearly varying dispersion and nonlinear coefficients,” OptoElectronics and Communications Conference and Australian Conference on Optical Fibre Technology (OECC/ACOFT 2014), 6-10 Jul 2014, Melbourne, Australia, TH12D-4.
(5) Peng Zhang, Xiang Xiao, Ling Wang, Yang Shao, and Shengdong Zhang*, "Homojunction In2O3-TFTs Prepared by Anodization Technique,"AM-FPD '14, Juy. 2-4, 2014, Japan.
(6) Lei Xie, Yang Shao, Xiang Xiao, Letao Zhang, Xiaobin Bi and Shengdong Zhang, "Fabrication of Indium-Tin-Oxide Thin-Film Transistor Using Anodization," AM-FPD '14, Juy. 2-4, 2014, Japan.
(7) Stefan Weizhi Meng, Letao Zhang, Xiang Xiao and Shengdong Zhang, "Study on the Transition between p and n Types of SnOx Film Deposited by DC Sputtering," AM-FPD '14, Juy. 2-4, 2014, Japan.
(8) Xiaobin Bi, Jianke Yao and Shengdong Zhang, "Magnesium-doped Indium Oxide Thin Film Transistors for Ultraviolet Detection," 2014 IEEE EDSSC, Jun. 18-20, 2014, Chengdu,China.
(9) Junmei Li，Congwei Liao，ZhiJin Hu，Wenjie Li and Shengdong Zhang*, "A Concrete Integrated Gate Driver with Sharing Low-level-holding Structure," 2014 IEEE EDSSC, Jun. 18-20, 2014,Chengdu,China.
(10) Yang Liu, Longyan Wang, and Shengdong Zhang, "Development of Low Temperature Amorphous Tin-doped Indium Oxide Thin-Film Transistors Technology," 2014 IEEE EDSSC, Jun. 18-20, 2014, Chengdu,China.
(11) Yuying Cai, Lisa Ling Wang, Shengdong Zhang, "A Gate-stress-induced ΔVth Model Reflecting Impact of Electric Field in IGZO Thin Film Transistors," 2014 IEEE EDSSC, Jun. 18-20, 2014, Chengdu,China.
(12) Shuguang Zhang, Letao Zhang, Xiang Xiao and Shengdong Zhang, "Influence of O2 on Al-Zn-Sn-O TFTs in the Active Layer Deposition and Annealing Process," 2014 IEEE EDSSC, Jun. 18-20, 2014, Chengdu,China.
(13) Congwei Liao, Zhijin Hu, Wenjie Li, Junmei Li, Shengdong Zhang, "IGZO-TFT Based Latch Circuit with High Stability and Full-Swing Output for System-on-Panel," SID 2014 DIGEST, Jun. 1-3, 2014, San Diego.
(14) Zhijin Hu, Congwei Liao, Junmei Li, Wenjie Li, Shengdong Zhang, "A-Si:H TFT Gate Driver with Shared Dual Pull-Down Units for Large-Sized TFT-LCD Applications," SID 2014 DIGEST, Jun. 1-3, 2014, San Diego.
(15) Longyan Wang, Yang Liu, Xin He, Yang Shao, Xiang Xiao, and Shengdong Zhang, "Oxide TFT Panel with ITO as Channel Layer, Source/Drain and Pixel Electrode," 10th International Thin-Film Transistor Conference (ITC 2014),Jan. 23-25, 2014, Holland.

Conference papers in 2013
(1) Shipeng Chi, Xiang Xiao, and Xin He, *Shengdong Zhang, “Self-Aligned Top-Gate a-IGZO Thin-Film Transistor with N2 Plasma-Treated Source/Drain Regions," 20th International Display Workshops (IDW), Dec. 4-6,2013, pp. 416-418, Sapporo, Japan.
(2) Chuanli Leng, Longyan Wang, and Shengdong Zhang*, "An AMOLED Pixel Circuit with Negative VTH Compensation Function," 20th International Display Workshops (IDW), Dec. 4-6, 2013, pp. 379-382,Sapporo,Japan.
(3) Qian Li and Hui Huang, “Spectral compression of femtosecond pulses in dispersion flattened and dispersion exponentially increasing fibers, ” 2013 Asia Communications and Photonics Conference (ACP 2013), Nov. 12-15, 2013, Beijing, China.
(4) Qian Li, Hui Huang, Huiling Lu, and Shendong Zhang, “Effects of third-order dispersion on self-similar pulse compression in nonlinear fibers,” 2013 Asia Communications and Photonics Conference (ACP 2013), Nov. 12-15, 2013, Beijing, China.
(5) Xin He, Longyan Wang, Shaojuan Li, Mansun Chan, and Shengdong Zhang*,"Implementation of Multi-threshold Voltage a-IGZO TFTs with Oxygen Plasma Treatment," International Conference on Solid State Devices and Material (SSDM), Sep. 24-28, 2013, pp. 192-193, Fukuoka.
(6) Chuanhong Liu, Guangyao Su, Fangwang Gou, and Zhaoyu Zhang*, "Absorption Enhancement of a-Si Thin Film Solar Cells through Surface Plasmon Polaritons and Cavity Resonance,” NUSOD 2013, Aug. 19-22, 2013, Vancouver, Canada.
(7) Suoming Zhang, Dedong Han, Shuyang Wang, Yu Tian, Dongfang Shan, Fuqing Huang, Cong Yingying, Xing Zhang, Shengdong Zhang, and Yi Wang, “Fabrication optimization to improve performance of gallium-doped zinc oxide thin film transistors,” 2013 Twentieth International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD), Jul. 2-5, 2013, Kyoto, Japan.
(8) Qian Li, K. Nakkeeran, and P. K. A. Wai, “Generation of high-repetition-rate ultrashort pulse train at 850 nm,” Proc. of Pacific Rim Conference Lasers and Electro-Optics (CLEO®/Pacific Rim 2013), Kyoto, Japan, Jun. 30-Jul. 4, 2013, paper WPB-11.
(9) Zhijin Hu, Congwei Liao, Can Zheng, and Shengdong Zhang, “A High-Speed and Reliable TFT Integrated Shift Register,” IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC), Jun. 3-5, 2013, 6628173, Hong Kong.
(10) Fuqing Huang, Dedong Han, Dongfang Shan, Yu Tian, Suoming Zhang, Yingying Cong, Yi Wang, Lifeng Liu, Xing Zhang, and Shengdong Zhang, “Room-temperature fabrication of flexible gallium-doped zinc oxide thin-film transistors on plastic substrates,” IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC), Jun. 3-5, 2013, Hong Kong.
(11) Dongfang Shan Dedong Han, Fuqing Huang, Yu Tian, Suoming Zhang, Yingying Cong, Yi Wang, Lifeng Liu, Xing Zhang, and Shengdong Zhang, “Fabrication and characteristics of fully transparent Aluminum-doped zinc oxide thin-film transistors," IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC), Jun. 3-5, 2013, Hong Kong.
(12) Congwei Liao, Zhijin Hu, Chuanli Leng, Can Zheng, and Shengdong Zhang, “A Charge-Cyclic Digital-to-Analog Converter for IGZO TFT Integrated Data Driver,” SID 2013, May 20-24, 2013, pp. 999–1002, Vancouver, Canada.
(13) Suoming Zhang , Yu Tian, Dedong Han, Dongfang Shan, Fuqing Huang, Shuyang Wang, Xing Zhang, Shengdong Zhang, and Yi Wang, “High-performance fully transparent Ga-doped ZnO TFTs fabricated by RF Magnetron Sputtering,” 2013 International Symposium on VLSI Technology, Systems, and Applications (VLSI-TSA), Apr. 22-24, 2013, 6545630, Hsinchu, Taiwan.
(14) Changwei Zheng and Shengdong Zhang, “Boron doped ZnO thin films and TFTs fabricated by magnetron sputtering,” Proceedings of China Display/Asia Display, Mar. 20-21, 2013, Shanghai, China.
(15) Jianke Yao and Shengdong Zhang, “The ultraviolet photo detecting properties of a-IGZO TFTs,” Proceedings of China Display/Asia Display, Mar. 20-21, 2013, Shanghai, China.
(16) Xudong Liu, Feifei Shi, and Zhaoyu Zhang*, “Plasmonic ring laser cavity with tiny footprint,” SPIE 2013, vol. 8619, Feb. 4-7, 2013.
(17) Siyao Guo, Guangyao Su, Deng Xiao, and Zhaoyu Zhang*, "Broadband light absorption enhancement in thin-film solar cells by combining front dielectric and back metal gratings,” SPIE 2013, vol. 8620, Feb. 4-7, 2013.
(18) Guangyao Su, Fangwang Gou, Chuanhong Liu, Siyao Guo, and Zhaoyu Zhang, "Thin film solar cells based on cavity enhanced grating structure," SPIE 2013, vol. 8620, Feb. 4-7, 2013.
(19) Feifei Shi, Xudong Liu, Xin Gong, and Zhaoyu Zhang*, “Cross-section curvature effect in plasmonic ring lasers,” SPIE 2013, vol. 8809, Feb. 4-7, 2013.

Conference papers in 2012
(1) Wei Deng, Xin He, Xiang Xiao， and Shengdong Zhang*, “Comparative Study of a-IGZO TFTs Deposited by RF and DC Sputtering,” IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC), Dec. 3-5, 2012, 6482857, Bangkok, Thailand.
(2) Can Zheng, Congwei Liao, Jianhua Li, and Shengdong Zhang*, “Design of Driving Transistorin a-Si:H TFT Gate Driver Circuit,” IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC), Dec. 3-5, 2012, 6482840, Bangkok, Thailand.
(3) Lisa L. Wang, James B. Kuo*,and Shengdong Zhang*, “Modeling Hot-Carrier-Induced Reliability of Poly-Silicon Thin Film Transistors,” IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC), Dec. 3-5, 2012, 6482798, Bangkok, Thailand.
(4) Dedong Han*, Youfeng Geng, Jian Cai, Wei Wang, Liangliang Wang, Yu Tian, Yi Wang, Lifeng Liu, and Shengdong Zhang, “Reliability Study of Zinc Oxide Thin-Film Transistor with High-K Gate Dielectric,” IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC), Dec. 3-5, 2012, 6482837, Bangkok, Thailand.
(5) Tony C. Liu and James B. Kuo, and Shengdong Zhang*, “Grain-Boundary Impact Ionization-Induced Current Hump Effects,” The International Electron Devices and Materials Symposium 2012 (IEDMS 2012), Nov. 29-30, Taiwan.
(6) ShaoJuan Li, Xin He, Dedong Han, Yi Wang, Lei Sun, and Shengdong Zhang, “Enhanced Performance of ZnO Thin-Film Transistors with ZnO Dual-Active-Layer,“ IEEE ICSICT 2012, Oct.29-Nov.1, 2012, Xi’an, China.
(7) Tony C. Liu, James B. Kuo, and Shengdong. Zhang, “Channel Length-Dependent Parasitic Bipolar Transistor Effect In Poly-Si TFTs Considering Traps At Grain Boundary,“ IEEE ICSICT 2012, Oct.29-Nov.1, 2012, Xi’an, China.
(8) Ruhai Fu, Congwei Liao, Chuanli Leng, and Shengdong Zhang, “An IGZO TFT Based In-Cell Capacitance Touch Sensor,“ IEEE ICSICT 2012, Oct.29-Nov.1, 2012, Xi’an, China.
(9) Chuanli Leng, Congwei Liao, Longyan Wang, Shengdong Zhang，“An a-IGZO TFT Pixel Circuit for AMOLED with Simultaneous VT Compensation,“ IEEE ICSICT 2012, Oct.29-Nov.1, 2012, Xi’an, China.
(10) Youfeng Geng, Dedong Han, Jian Cai, Wei Wang, Liangliang Wang, and Shengdong.Zhang，“High Performance Dual-layer Channel ZnO Thin-Film Transistor,“ SSDM 2012, Sep. 25-27, 2012, Japan.
(11) Jian Cai, Dedong Han, Youfeng Geng, Wei Wang, Liangliang Wang, Yu Tian, Huikun Yao, Lixun Qian, Shengdong Zhang*,and Yi Wang, “High-Performance Transparent Top-Gate AZO TFTs Fabricated by Low-Temperature Process,” the 2012 International Conference on Solid State Devices and Materials (SSDM 2012), Sep. 25-27,Japan.
(12) Wei Wang, Dedong Han, Jian Cai, Youfeng Geng, Liangliang Wang, Yu Tian, Yi Wang, and Shengdong Zhang, “Fully Transparent AZO Thin-film Transistors Fabricated on Flexible Plastic Substrates at Room Temperature,“ SSDM 2012, Sep. 25-27, 2012, Japan.
(13) Wei Wang, Dedong Han, and Jian Cai，“Al-doped ZnO Thin-Film Transistors on Flexible Plastic Substrates,“ The Nineteenth International Workshop on Active-Matrix Flat Panel Displays and Devices(AM-FPD), Jul. 23-25, 2012, Japan.
(14) Tony. C. Liu, Janmes B. Kuo, and Shengdong Zhang，“Floating-Body Kink Effect: Poly-Si TFT Versus SOI CMOS,” EuroSOI, Jun. 21-23, 2012.
(15) Shanjuan Li, Lei Sun, Dedong Han, Yi Wang, Ruqi Han, Shengdong Zhang，“Stability of Zinc Oxide Thin-Film Transistors,” ECS Transactions,Vol. 44, No. 1, pp. 57-62, May 2012.
(16) Xia Li*, Junhao Chu, Longxia Li, Ning Dai, ShengdongZhang, Fujia Zhang, “Fabrication and Characterization of Room Temperature Nuclear Radiation CdZnTe3×3 Pixel Array Detector,” 2012 Symposium on Photonics and Optoelectronics (SOPO 2012), May 21-23, 2012, 6270904, Shanghai, China.
(17) Dedong Han, Jian Cai, Wei Wang, Liangliang Wang, Yi Wang, and ShendongZhang, “High performance Aluminum-doped ZnO thin film transistors with high-K gate dielectrics fabricated at low temperature,” European Materials Research Society(E-MRS), May 15-17, 2012, France.
(18) Dedong Han*, WeiWang, Jian Cai, Liangliang Wang, Yicheng Ren, Yi Wang,and Shengdong Zhang, “Flexible Thin-Film Transistors Fabricated on Plastic substrate at room temperature,” European Materials Research Society(E-MRS), May 15-17,2012,France.
(19) Jian Cai, Dedong Han, Wei Wang, Liangliang Wang,Yi Wang, and ShendongZhang, “High Performance RF Sputtering Deposited AZO Thin-Film Transistors after a Post-Annealing Process,” 2012 Second International Conference on Electric Information and Control Engineering (ICEICE 2012), Apr. 6-8, 2012, pp. 693–695, Lushan, China.
(20) Xia Li*, Shuo Sun, Jian Suo, Shengdong Zhang, Fujia Zhang, “XRD Analysize PTCDA Film Evaporatived on p-Si(110) Substrate,” 2012 Symposium on Photonics and Optoelectronics (SOPO 2012), May 21-23, 2012, 6270557, Shanghai, China.

Conference papers in 2011
(1) Yicheng Ren, Dedong Han*, Lei Sun, Gang Du, Shengdong Zhang, Xiaoyan Liu, and Yi Wang*, “Effects of Non-Uniform Grains Distribution of the Intrinsic N-Channel Poly crystalline Silicon TFTs,” IEEE International Conference on Electron Device and Solid-State Circuits 2011, Nov. 17-18, 2011, 6117673, Tianjin, China.
(2) Shaojuan Li, Dedong Han, Yi Wang, and Shengdong Zhang*, “High Performance Reactive Sputtering Deposited Zno Thin-Film Transistors on Transparent Substrate,” IEEE International Conference on Electron Devices and Solid-State Circuits, Nov. 17-18, 2011, 6117749, Tianjin, China.
(3) Xin Lin and Shengdong Zhang*, “High Performance Zn1-Xmgxo TFTs for UV Image Sensors,” IEEE International Conference on Electron Devices and Solid-State Circuits, Nov. 17-18, 2011, Tianjin, China.
(4) Jianke Yao and ShengdongZhang*, “Effects of channel composition and gate dielectrics on the stability of a-IGZO TFTs,” The 12th Asian Symposium on Information Display (ASID), Nov. 6-9, 2011, pp. 373-376, Kunshan, China.
(5) Yinlong Li, Xin He, Xin Lin, Beibei Jiang, Shaojuan Li, and Shengdong Zhang*, “Low-temperature materials and thin film transistors for flexible electronics,” The 12th Asian Symposium on Information Display (ASID), Nov. 6-9, 2011, pp. 397-400, Kunshan, China.
(6) Xin He, Shaojuan Li, Xinnan Lin, Beibei Jiang, Yinlong Li, and ShengdongZhang*, “The Source/Drain Resistance of a-IGZO TFT”, The 12th Asian Symposium on Information Display (ASID), Nov. 6-9, 2011, pp. 540-542, Kunshan, China.
(7) Beibei Jiang, Xin Lin, Shaojuan Li, Xin He, Yinglong Li, and Shengdong Zhang*, “Structural, Electrical and Optical Properties of Zn1-xMgxO Films Prepared Reactive DC Sputtering,” The 12th Asian Symposium on Information Display (ASID), Nov. 6-9, 2011, pp. 556-559, Kunshan, China.
(8) Xin Lin, Beibei Jiang, Shaojuan Li, Yinglong Li, Xin He, and Shengdong Zhang*, “Reactive DC Magnetron Sputtering Deposited ZnMgO Transparent Thin-Film Transistors”, The 12th Asian Symposium on Information Display (ASID), Nov. 6-9, 2011, pp. 568-571, Kunshan, China.
(9) Xiaoming Liu, Congwei Liao, Tao Chen, David Dai, Smart Chung, T. S. Jen, and Shengdong Zhang*, “Hybrid Driving Scheme of a-Si TFT pixel circuit for AMOLEDs,” The 12th Asian Symposium on Information Display (ASID), Nov. 6-9, 2011, pp. 208-211, Kunshan, China.
(10) Congwei Liao, Xiaoming Liu, Tao Chen, David Dai, Smart Chung, T. S. Jen, and Shengdong Zhang*, “Data Signal Induced Feed-through Effects in Integrated a-Si:H Gate Driver,” The 12th Asian Symposium on Information Display (ASID), Nov. 6-9, 2011, pp. 389-392, Kunshan, China.
(11) Shaojuan Li, Dedong Han, Lei Sun, Yi Wang, Ru-Qi Han, and Shengdong Zhang*, “High Performance RF Sputtering Deposited ZnO Thin-Film Transistors,” The 12th Asian Symposium on Information Display (ASID), Nov. 6-9, 2011, pp. 393-396, Kunshan, China.
(12) Tao Chen, Congwei Liao, Xiaoming Liu, David Dai, Smart Chung, T. S. Jen, and Shengdong Zhang*, “A Compact Integrated Hydrogenated Amorphous Silicon Gate Driver for TFT- LCD,” The 12th Asian Symposium on Information Display (ASID), Nov. 6-9, 2011, pp. 530-533, Kunshan, China.
(13) Yicheng Ren, Dedong Han*, Lei Sun, Gang Du, Shengdong Zhang, Xiaoyan Liu, and Yi Wang*, “Performance of Asynchronous Double-gate Poly-Si Thin-film Transistors”, The 12th Asian Symposium on Information Display (ASID), Nov. 6-9, 2011, pp. 552-555, Kunshan, China.
(14) Huajie Luo, Shengdong Zhang, and Peng Jin*, “Optimization of Trichromatic Color Temperature Tunable White Light LEDs,” 2011 International Conference on Electronics and Optoelectronics (ICEOE), Jul. 29-31, 2011, pp. 3287-3297, Dalian, China.
(15) Chunyu Yu*, Lingli Kong, Junju Zhang, and Shengdong Zhang, “3D Information Extraction Based on A Novel X-Ray Imaging System,” International Symposium on Photoelectronic Detection and Imaging 2011: Advances in Imaging Detectors and Applications, May 24-26, 2011, 81942M, Beijing, China.
(16) Chunyu Yu*, Lingli Kong, Junju Zhang, and Shengdong Zhang, "The X-Ray Imaging System’S Requirements for CCD Pixel," International Symposium on Photoelectronic Detection and Imaging 2011: Advances in Imaging Detectors and Applications, May 24-26, 2011, 819415, Beijing, China.
(17) Chunyu Yu*, Lingli Kong, Junju Zhang, and Shengdong Zhang, “The Low Light Level Image Intensifier’s Application in X Ray Imaging,” International Symposium on Photoelectronic Detection and Imaging 2011: Advances in Imaging Detectors and Applications, May 24-26, 2011, 81941M, Beijing, China.
(18) Chunyu Yu*, Lingli Kong, Junju Zhang, and Shengdong Zhang, "Light Decreases Through the X-Ray Imaging Chain,” International Symposium on Photoelectronic Detection and Imaging 2011: Advances in Imaging Detectors and Applications, May 24-26, 2011, 81941V, Beijing, China.
(19) Xia Li*, ShengdongZhang, Fujia Zhang, Jing Wang, and Haoli Zhang," Fabrication technology and characterization of PTCDA/p-Si photo-electronic detector", 2011 Symposium on Photonics and Opto electronics (SOPO2011), May 16-18, 2011, 5780671, Wuhan, China.

Conference papers in 2010
(1) Changde He, Congwei Liao, Yinan Liang, and Shengdong Zhang,“A New Integrated Gate Driver with Shift Register Circuits Employing 4 Clocks for 14.1-inch TFT-LCD,“ International Conference on Electrical and Control Engineering, ICECE 2010 June 26-28, 2010.
(2) Linfeng Du and Shengdong Zhang，“RDF Effect Induced by Source/Drain Doping in Nano-Scale UTB SOI MOSFET with Nominally Un-doped Channel,” Proceedings of 2010 IEEE Conference on Electron Devices and Solid-State Circuits,December 15-17, 2010, pp. 683-686, Hong Kong.
(3) Longyan Wang, Congwei Liao, Yinan Liang, and Shengdong Zhang，“A New Four-Transistor Poly-Si TFT Pixel Circuit for AMOLED,” The 10th International Conference on Solid-State and Integrated-Circuit Technology, Nov. 1-4, pp. 1453-1455, 2010.
(4) Congwei Liao, Longyan Wang, Changde He, Yinan Liang, David Dai, Smart Chung,T. S. Jen,and Shengdong Zhang，“A Fast Integrated a-Si Gate Driver,” The 10th International Conference on Solid-State and Integrated-Circuit Technology Nov. 1-4, pp. 1438-1440, 2010.
(5) Linfeng Du, Shengdong Zhang，“Source/Drain Doping Induced Vth Variation in Nano-scale UTB SOI MOSFET,” 2010 International Conference on Solid State Device and Materials (SSDM),September 22 -24, Tokyo, Japan.

Conference papers before 2009
(1) Changde He, Congwei Liao, Yinan Liang and Shengdong Zhang，“Integrated a-Si:H TFT Gate driver for 14.1-inch WXGA TFT-LCD”，Digest of Technical Papers, ASID’09, pp. 63-66.
(2) Congwei Liao, Changde He, Yinan Liang and Shengdong Zhang，“A New Integrated a-Si:H TFT Gate Driver with Q Node quasi-Grounded”，Digest of Technical Papers, ASID’09, pp. 55-58.
(3) Yinan Liang, Congwei Liao, Changde He, and Shengdong Zhang，“Error Current Effects in Current-Programmed Pixel Circuits For AMOLED”，Digest of Technical Papers, ASID’09, pp. 152-156.
(4) Shao-Juan Li1, Lei Sun1, Yi Wang1, Ruqi Han1 and Shengdong Zhang，“Reactive Sputtered Deposition and Etched Patterning of ZnO Films for Active Matrix Flate Panel Display (AM FPD),” Digest of Technical Papers, ASID’09, pp. 286-289.
(5) Congwei Liao, Shengdong Zhang，“A Novel Super-Halo Doping Concept for Nanoscale CMOS Technology,” ECS Transactions, Vol.18(1), ISTC/CSTIS 2009 (CISTC), pp. 111-116.
(6) Linfeng Du, Hui Deng, Gang Du and Shengdong Zhang，“Characteristic Variations Induced by Random Fluctuation of Source/Drain Lateral Distribution Dopant in Nano-Scale UTB SOI MOSFET,” ECS Transactions, Vol.18(1), ISTC/CSTIS 2009 (CISTC) , pp. 77-81.
(7) Dedong Han, Yi Wang, Shengdong Zhang, Lei Sun and Ruqi Han，”Fabrication and Characteristics of ZnO-based Thin Film Transistors,” The 9th International Conference on Solid-State and Integrated-Circuit Technology Oct. 20~23, pp. 982-984, 2008.
(8) Xu Han, Dingyu Li, Chengen Yang and Shengdong Zhang，”A Simple Nano-Scale Patterning Technology for FinFET Fabrication,” The 9th International Conference on Solid-State and Integrated-Circuit Technology Oct. 20~23, pp. 184-186, 2008.
(9) M. Chan, Shengdong Zhang, X. Lin, X. Wu, and P. C. H. Chan (invited),”3-Dimensional Integration for Interconnect Reduction in for Nano-CMOS Technologies,” IEEE Tencon, November 23, 2006, Hong Kong.
(10) Wei Ke, Xu Han, Dingyu Li, Xiaoyan Liu, Ruqi Han, and Shengdong Zhang，”Recessed Source/Drian for Scaling SOI MOSFET to the Limit,” The 8th International Conference on Solid-State and Integrated-Circuit Technology Oct. 23~26, pp. 84-86, 2006.
(11) Ji Cao, Dingyu Li, Wei Ke, Lei Sun, Ruqi Han, and Shengdong Zhang，”T-Shaped Body Silicon-on-Insulator (SOI) MOSFET,” The 8th International Conference on Solid-State and Integrated-Circuit Technology pp. 1293-1295, Oct. 23~26, 2006.
(12) Wei Ke, Shengdong Zhang, X. Liu, and Ruqi Han，”Soruce/Drain Resistance of UTB SOI MOSFET,” Proceedings of 2005 IEEE Conference on Electron Devices and Solid-State Circuits December 19-21, 2005, pp. 405-408, Hong Kong.
(13) Dingyu Li, We Ke, L. Sun, Ruqi Han, and Shengdong Zhang，”A MOS Transistor with Source/Drain on Insulator and Channel Doped in Step-Function Profile,” Proceedings of 2005 IEEE Conference on Electron Devices and Solid-State Circuits December 19-21, 2005, pp. 683-686, Hong Kong.
(14) X. Wu, P. C. Chan, Shengdong Zhang, and Mansun Chan，”A Capped Trimming Hard-Mask Patterning Technique for Integration of Nano-Devices and Conventional Integrated Circuits,” Proceedings of 2005 IEEE Conference on Electron Devices and Solid-State Circuits December 19-21, 2005, pp. 781-784, Hong Kong.
(15) Philip C.H. Chan, Xusheng Wu, Shengdong Zhang, Chuguang Feng, Mansun Chan，“Three-Dimensional Stacked-Fin-CMOS Integrated Circuit Using Double Layer SOI Material,” The 7th International Conference on Solid-State and Integrated-Circuit Technology Oct. 19~21, 2004.
(16) Wei Ke, Shengdong Zhang, Xiaoyan Liu and Ruqi Han, “Scalability and Parasitic Effect of UTB SOI MOSFETs with Raised S/Dand Sunk S/D,” The 7th International Conference on Solid-State and Integrated-Circuit Technology Oct. 19~21, 2004.
(17) Dingyu Li, Lei Sun, Zhiliang Xia, Shengdong Zhang, Xiaoyan Liu, Jinfeng Kang, Ruqi Han，”Novel Schottky Barrier MOSFET with Dual-layer Silicide Source/Drain Structure,” The 7th International Conference on Solid-State and Integrated-Circuit Technology Oct. 19~21, 2004.
(18) Shengdong Zhang, Xinnan Lin, Ruqi Han, Xusheng Wu and Mansun Chan，”Vertical SOI CMOS Technology with p-MOSFET on SOI Film and n-MOSFET on bulk base,” 2004 International Conference on Solid State Device and Materials (SSDM),September 14 – 27, pp. 770－771, Tokyo, Japan.
(19) Zhikuan Zhang, Shengdong Zhang and Mansun Chan, “Self-Aligned Recessed Source/Drain Ultra-Thin Body SOI MOSFET Technology,” Proceedings of the 34th European Solid-State Device Research Conference (ESSDERC 2004)September 21-23, 2004, pp. 301-304, Leuven, Belgium.
(20) Z. Zhang, Shengdong Zhang, C. Feng, and M. Chan，”A Study of Source/Drain-On-Insulator Structure for Extremely Scaled MOSFETs,” 62nd Device Research Conference Digest, pp. 115-116, June 21-23, 2004, U.S.A..
(21) X. Wu, Shengdong Zhang, M. Chan, and P. Chan，”Design of Sub-50nm Ultrathin-Body (UTB) SOI MOSFETs with Raised S/D,” Proceedings of 2003 IEEE Conference on Electron Devices and Solid-State Circuits December 16-18, 2003, pp. 327-330, Hong Kong.
(22) Shengdong Zhang, Ruqi Han, Zhikuan Zhang, Xinnan Lin, Ping K. Ko and Mansun Chan, ”A Viable Self-aligned Bottom-Gate MOSFET Technology for High Density and Low Voltage SRAM,” 32st European Solid-State Device Research Conference (ESSDERC 2001) September, 2002.
(23) Jagar Singh, Shengdong Zhang, and Mansun Chan，”A Unified Predictive TFT Model with Capability for Statistical Simulation,” 2001 International Semiconductor Device Research Symposium, December 5-7, 2001,Holiday Inn Georgetown 2001 Wisconsin Avenue, N.W. Washington, D. C.
(24) Shengdong Zhang, Ruqi Han, Johnny K. O. Sin, and Mansun Chan，”A Self-Aligned Double-Gate Polysilicon TFT Technology”，2001 International Semiconductor Device Research Symposium, December5-7, 2001,Holiday Inn Georgetown 2001 Wisconsin Avenue, N.W. Washington, D. C.
(25) Xinnan Lin, Chuguang Feng, Shengdong Zhang, Wai-Hung Ho, and Mansun Chan，“A Simple Method to Fabricate Double-Gate SOI MOSFET with Diffusion Layer on Bulk Silicon Wafer as the Bottom,” 2001 International Conference on Solid State Device and Materials (SSDM),September 25 – 28, pp.252-253 Tokyo, Japan.
(26) Xinnan Lin, Chuguang Feng, Shengdong Zhang, Wai-Hung Ho, and Mansun Chan，”Double-Gate SOI MOSFET Fabrication from Bulk Silicon Wafer,” 2001 IEEE International SOI Conference, October 1 to 4, 2001, pp. 93-94,Sheraton Tamarron Resort, Durango, CO, U.S.A..
(27) Shengdong Zhang, Mansun Chan, Ruqi Han Xiaoyan Liu, Y.Y. Wang，”Development and Properties of Self-aligned Double-gate p-Si TFT,” The 6th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT 2001), October 22, 2001, Shanghai, China.
(28) Shengdong Zhang, Ruqi Han, Mansun Chan，”A Novel self-aligned bottom gate TFT technology,” 31st European Solid-State Device Research Conference (ESSDERC 2001).September, 2001, pp. 475-478 Nuremberg, Germany.
(29) Shengdong Zhang, Ru-qi Han, Mansun Chan, Xiao-yan Liu, Xu-dong Guan，”A Novel Sub-50 nm Poly-Si Gate Patterning Technology,” IEEE Region 10 International Conference on Electrical & Electron Technology (TENCON 2001). August, 2001, pp. 841-843, Singapore.
(30) Shengdong Zhang, Ru-qi Han, Xiao-yan Liu, Xu-dong Guan, Tin Li, and Dachen Zhang，“A Lithography Independent Gate Definition Technology for Fabricating Sub-100nm Devices,” 2001 IEEE Hong Kong Electron Device Meeting, June 30, 2001, pp. 81-84.
(31) Chunxiang Zhu, Shengdong Zhang, Sin JKO, Mok PKT，”Ultra-thin elevated channel low temperature poly-Si TFTs for fully-integrated AMLCD systems on glass,” Proceedings of the 29th European Solid-State Device Research Conference.ESSDERC’99. Editions Frontieres. 1999, pp. 708-11. Neuilly sur Seine, France.
(32) Shengdong Zhang, Kumar A, Sin JKO.”Development of Low Temperature Poly-silicon TFT with Excellent Saturation Characteristics,” Proceedings of the 18th. International Display Research Conference.Soc. Inf. Display (SID). 1998, pp.361-4. San Jose, CA, USA.
(33) Shengdong Zhang , Sin JKO.”A High-performance Bi-directional Duper-MIM Diode With Symmetrical and Shift-free I-V Characteristics,” 1998 SID International Symposium. Digest of Technical Papers. Vol. 29. Soc. Inf. Display.1998, pp.447-50. Santa Anaheim, CA, USA.
(34) Shengdong Zhang, Wang G-L, Zheng C-W, Cheng X-X., ”Development of Self-alignment Edge Junction MIM matrix for LCD,” Proceedings of Spie – the International Society for Optical Engineering SPIE-Int. Soc. Opt. Eng. vol. 2892, 1996, pp. 178-83. USA.

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