Journals in 2015
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L. L. Wang, H.Y. He, X. Liu, W. Deng, Shengdong Zhang, “Charge Trapping Model for Temporal Threshold Voltage Shift in a-IGZO TFTs Considering Variations of Carrier Density in Channel and Electric Field in Gate Insulator,” IEEE Trans. on Electron Devices, vol. 62, no. 7, pp., 2015. |
| (2) |
Yang Shao, Xiang Xiao, Xin He, Wei Deng, and Shengdong Zhang, “Low Voltage a-InGaZnO Thin-Film Transistors with Anodized Thin HfO2 Gate Dielectric,” IEEE Electron Device Letters, vol. 36, no.6, pp. 573 - 575, 2015. |
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LongYan Wang, Lei Sun, Dedong Han, Yi Wang, ManSun Chan, Shengdong Zhang, “Self-aligned offset gate poly-Si TFTs using photoresist trimming technology,” SCIENCE CHINA Information Sciences, Vol. 58 No. 03, 2015. |
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Zhuofa Chen, Dedong Han, Nannan Zhao, Yingying Cong, Jing Wu, Junchen Dong, Feilong Zhao, Lingling Huang, Yi Zhang, Guodong Cui, Lifeng Liu, Shengdong Zhang, Xing Zhang, Yi Wang, “Performance enhancement of fully transparent tin-doped zinc oxide thin-film transistors fabricated by sputtering at low temperature,” Electronics Letters, vol. 51, no. 3, pp. 272 – 274, 23 Jan 2015. |
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Hongyu He, Xueren Zheng and Shengdong Zhang, “1/f Noise Expressions for Amorphous InGaZnO TFTs Considering Mobility Power-Law Parameter in Above-Threshold Regime,” IEEE Electron Device Letters, vol. 36, no.2, pp. 156 - 158, 2015. |
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Congwei Liao, Zhijin Hu, D. Dai, S. Chung, T.S. Jen, and Shengdong Zhang, “A Compact Bi-Direction Scannable a-Si:H TFT Gate Driver,” IEEE/OSA Journal of Display Technology, vol.10, no. 1, pp. 1-3, 2015. |
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Nannan Zhao, Dedong Han, Zhuofa Chen, Jing Wu, Yingying Cong, Junchen Dong, Feilong Zhao, Shengdong Zhang, Xing Zhang, and Yi Wang, “High Performance Ti-Doped ZnO TFTs With AZO/TZO Heterojunction S/D Contacts,” IEEE/OSA Journal of Display Technology, vol. 10, no. 5, pp. 412 - 416, 2015. |
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Xiang Xiao, Yang Shao, Xin He, Wei Deng, Letao Zhang and Shengdong Zhang, “Back Channel Anodization Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors Process,” IEEE Electron Device Letters, vol. 36, no.4, pp. 357 - 359, 2015. |
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Wu J, Han DD, Cong YY, Zhao NN, Chen ZF, Dong JC, Zhao FL, Shengdong Zhang, Liu LF, Zhang, X, “Effects of channel thickness on characteristics of HZO-TFTs fabricated at low temperature,” Electronics Letters, vol. 51, no.11, pp., 28 May 2015. |
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Jianhua Li, Jian Wang, Letao Zhang, and Shengdong Zhang, “Nanocrystalline SnO2 thin films prepared by anodization of sputtered Sn thin films,” J. Vac. Sci. Technol. A 33, 031508 (2015). |
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Journals in 2014
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X. He, X. Xiao, Y. Shao, W. Deng, C. Leng, and Shengdong Zhang, “A Multi-Vt a-IGZO TFT Technology Using Anodization to Selectively Reduce Oxygen Vacancy Concentration in Channel Regions,” IEEE Electron Device Letters, vol. 35, no.12, pp. 1248 - 1250, 2014. |
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X. Liu, L. L. Wang, C. Ning, H. Hu, W. Yang, K. Wang S. Y. Yoo, and Shengdong Zhang, “Gate Bias Stress-Induced Threshold Voltage Shift Effect of a-IGZO TFTs with Cu Gate,” IEEE Trans. on Electron Devices, vol. 61, no. 12, pp. 4299 -4304, 2014. |
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Liang Jun, Su YanTao, Lin Qinxian, Zhou Hang, Shengdong Zhang, Pei Yanli, Hu RuiQin, “Forming-free resistive switching memory based on LiFePO4 nano-particle embedded in conjugated polymer,” Semiconductor Science and Technology, vol. 29, no. 11, Nov. 2014. |
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Xin He, Longyan Wang, Xiang Xiao, Wei Deng, Letao Zhang, Mansun Chan, and Shengdong Zhang, "Implementation of Fully Self-Aligned Homojunction Double-Gate a-IGZO TFTs," IEEE Electron Device Letters, vol. 35, no. 9, pp. 927-929, Sep. 2014. |
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Zhuofa Chen, Dedong Han, Nannan Zhao, Yingying Cong, Jing Wu, Lingling Huang, Junchen Dong, Feilong Zhao, Lifeng Liu, Shengdong Zhang, Xing Zhang, Yi Wang, “High-performance full transparent tin-doped zinc oxide thin-film transistors fabricated on glass at low temperatures,” Electronics Letters, vol. 50, no. 20, p. 1463-1464, 25 Sept. 2014. |
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Chuanli Leng, Cuicui Wang, Longyan Wang, and Shengdong Zhang, "Separate Frame Compensated Current-Biased Voltage-Programmed Active Matrix Organic Light-Emitting Diode Pixel," IEEE Electron Device Letters, vol. 35, no. 8, pp. 847-849, Aug. 2014. |
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Yang Shao, Xiang Xiao, Longyan Wang, Yang Liu, and Shengdong Zhang, “Anodized ITO Thin-Film Transistors,” Advanced Functional Materials, vol. 24, no. 26, pp. 4170–4175, July 9, 2014. |
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Lisa Ling Wang, Tony Chi Liu, Yuying Cai, and Shengdong Zhang, "Thin-Film Transistor Vth Shift Model Based on Kinetics of Electron Transfer in Gate Dielectric," IEEE Trans. on Electron Devices, vol. 61, no. 5, pp. 1436-1443, May 2014. |
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Longyan Wang, Lei Sun, Dedong Han, Yi Wang, Mansun Chan, and Shengdong Zhang, "A Hybrid a-Si and Poly-Si TFTs Technology for AMOLED Pixel Circuits," Journal of Display Technology, vol. 10, no. 4, pp. 317-320, Apr. 2014. |
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Zhuofa Chen, Dedong Han, Nannan Zhao, Yingying Cong, Jing Wu, Junchen Dong, Feilong Zhao, Lifeng Liu, Shengdong Zhang, Xing Zhang, Yi Wang, “High-performance Dual-layer Channel ITO/TZO TFTs Fabricated on Glass Substrate”, Electronics Letters, vol. 50, no. 8, pp. 633–635, Apr. 2014. |
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Dongfang Shan, Dedong Han, Fuqing Huang, Yu Tian, Suoming Zhang, Lin Qi, Yingying Cong, Shengdong Zhang, Xing Zhang, and Yi Wang, “Fabrication and Characteristics of High-performance and High-stability Aluminum-doped Zinc oxide Thin-Film Transistors,” Jpn. J. Appl. Phys. 53 04EJ07, 2014. |
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Yu Tian, Dedong Han, Suoming Zhang, Fuqing Huang, Dongfang Shan, Yingying Cong, Jian Cai, Liangliang Wang, Shengdong Zhang, Xing Zhang, “High-performance Dual-layer Channel Indium Gallium Zinc Oxide Thin-film Transistors Fabricated in Fifferent Oxygen Contents at Low Temperature,” Jpn. J. Appl. Phys. 53 04EF07, 2014. |
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Y. Q. Xia, Lei Sun, Hao Xu, Jing-Wen Han, Yi-Bo, Zhang, Yi Wang, and Shengdong Zhang, “Magnetic Properties of Co-Doped TiO2 Films Grown on TiN Buffered Silicon Substrates,” Chinese Physics Letters, Vol.31, 027501: 1-4, no.2, 2014. |
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Liu Xiang, Zhang Shengdong, Xue Jianshe, Ning Ce, Yang Jing, WangGang “Improvement of Indium Gallium Zinc Oxide Thin Film Transistor with Etch-Stop Layer of Bottom-Gate,” Chinese Journal of Vacuum Science and Technology. Vol.34, no. 2, pp.130-133, 2014. |
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Qian Li, K. Nakkeeran, P. K. A. Wai, “Ultrashort pulse train generation using nonlinear optical fibers with exponentially decreasing dispersion,” J. Opt. Soc. Am. B 31, pp. 1786-1792, 2014. |
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Journals in 2013
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Xiang Xiao, Wei Deng, Sshipeng Chi, Yang Shao, Xin He, Ling Wang, and Shengdong Zhang, “Effect of O2 Flow Rate During Channel Layer Deposition on Negative Gate Bias Stress-Induced Vth Shift of a-IGZO TFTs,” IEEE Trans. on Electron Devices, vol. 60, no. 12, pp. 4159-4164, 2013. |
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Chuanli Leng, Longyan Wang, and Shengdong Zhang, “Two-Transistor Current-Biased Voltage-Programmed AM-OLED Pixel,” IEEE Electron Device Letters, vol. 34, no. 10, pp. 1262-1264, 2013. |
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Xiang Xiao, Wei Deng, Xin He, and Shengdong Zhang, “a-IGZO TFTs With Inductively Coupled Plasma Chemical Vapor Deposited SiOx Gate Dielectric,” IEEE Trans. on Electron Devices, vol. 60, no. 8, pp. 2687-2690, 2013. |
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Jian Cai, Dedong Han, Youfeng Geng, Wei Wang, Ling Wang, Shengdong Zhang, and Yi Wang, “High-Performance Transparent AZO TFTs Fabricated on Glass Substrate,” IEEE Trans. on Electron Devices, vol. 60, no. 7, pp. 2432-2435, 2013. |
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Dedong Han, Wei Wang, Jian Cai, Liangliang Wang, Yicheng Ren, Yi Wang and Shengdong Zhang,“ Flexible Thin-Film Transistors on Plastic Substrate at Room Temperature,” Journal of Nanoscience and Nanotechnology, vol. 13, no. 7, pp. 5154-5157, 2013. |
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Wei Wang, Dedong Han, Jian Cai, Youfeng Geng, Liangliang Wang, Yu Tian, Xing Zhang, Yi Wang, and Shengdong Zhang, “Fully Transparent Al-Doped ZnO Thin-Film Transistors on Flexible Plastic Substrates,” Jpn. J. Appl. Phys. 52 (2013) 04CF10. Apr. 2013. |
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Lisa L. Wang, James B. Kuo, and Shengdong Zhang, “Analytical Drain Current Model for Poly-Si Thin-Film Transistors Biased in Strong Inversion Considering Degradation of Tail States at Grain Boundary,” IEEE Trans. on Electron Devices, vol. 60, no. 3, pp. 1122-1127, 2013. |
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Ji Chen，Kebo He，Zhaoyu Zhang*, "Triangle defects in bowtie nanoantennas,” Appl Phys A, vol. 112, no. 3, pp. 591-596, 2013. |
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Congwei Liao, Changde He, Tao Chen, David Dai, Smart Chung, T. S. Jen, and Shengdong Zhang，“Design of Integrated Amorphous-Silicon Thin-Film Transistor Gate Driver,”Journal of Display Technology, vol. 9, no. 1, 2013. |
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Jianke Yao, Li Gong, Lei Xie, and Shengdong Zhang, “Comparison of the electrical and optical properties of direct current and radio frequency sputtered amorphous indium gallium zinc oxide films,” Thin Solid Films, vol. 527, pp. 21-25, Jan. 2013. |
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Jian Cai, Dedong Han, Youfeng Geng, Wei Wang, Liangliang Wang, Yu Tian, Lixun Qian, Xing Zhang, and Shengdong Zhang, and Yi Wang,” Effect of O2 Incorporation During the Channel Fabrication Process on Aluminum-Doped Zinc Oxide Thin-Film Transistor Characteristics,” Jpn. J. Appl. Phys. Vol. 52, 04CF11, 2013. |
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Qian Li, J. Nathan Kutz, and P. K. A. Wai, “High-degree pulse compression and high-coherence supercontinuum generation in a convex dispersion profile,” Opt. Commun. pp. 301-302, 2013. |
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Yucui Wu, Xinnan Lin, Min Zhang, “Carbon Nanotubes for Thin Film Transistor: Fabrication, Properties and Applications,” Journal of Nanomaterials, vol. 2013, Article ID 627215. |
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Journals in 2012
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Tony.C. Liu, James B. Kuo and Shengdong Zhang，“A closed-form analytical transient response model for on-chip distortionless interconnect,” IEEE Trans. Electron Devices, 59(12), pp. 3186-3192, Dec. 2012. |
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Shaojuan Li, Y. Cai, Dedong Han, Yi Wang, Lei Sun, Mansun Chan, and Shengdong Zhang, “Low-Temperature ZnO TFTs Fabricated by Reactive Sputtering of Metallic Zinc Target,” IEEE Trans. on Electron Devices, vol. 59, pp. 2555-2558, no. 9, 2012. |
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Jianke Yao, Shengdong Zhang, Li Gong，“Band offsets in ZrO2/InGaZnO4 heterojunction,“ Applied physics letter, vol. 101, no. 9, pp. 56-60, 2012. |
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Congwei Liao, Changde He, Tao Chen, T.S.Jan and Shengdong Zhang, “Implementation of an a-Si:H TFT Gate Driver Using a Five-Transistor Integrated Approach,” IEEE Trans. on Electron Devices, vol. 59, pp. 2142-2148, no. 8, 2012. |
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Tony C. Liu, James B. Kuo and Shengdong Zhang, “Floating-Body Kink-Effect-Related Parasitic Bipolar Transistor Behavior in Poly-Si TFT,” IEEE Electron Device Letters, Vol.33 , no.6. , pp. 842 – 844, Jun. 2012. |
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Tony.C Liu, James B. Kuo and Shengdong Zhang，“Floating-body kink-effect-related parasitic bipolar transistor behavior in Poly-Si TFT,“ IEEE Electron Device Lett, vol. 33, no.6, pp. 842-844, 2012. |
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Dedong Han, Yi Wang, Lei Sun,Ruqi Han, Matsumoto, Shengdong Zhang, Satoru,Ino, Yuji，“Fabrication and characteristics of ZnO thin films deposited by RF sputtering on plastic substrates for flexible display,” Science China Information Sciences, vol. 55, no. 5, pp. 1441-1445, 2012. |
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Shaojuan Li,Xin He, Dedong Han,Lei Sun,Yi Wang, Ruqi Han,Mansun Chan, and Shengdong Zhang, “Reactive Radiofrequency Sputtering-Deposited Nanocrystalline ZnO Thin-Film Transistors,” Chinese Physics Letters, Vol. 29, no.1, 2012. |
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Journals in 2011
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Dedong Han,Yi Wang, Shengdong Zhang,Lei Sun,Ruqi Han, Matsumoto S., Ino Y., “Influence of sputtering power on properties of ZnO thin films fabricated by RF sputtering in room temperature,” Science China-Information Sciences, 2011.54: doi: 10.1007/s11432-011- 4347. |
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Dapeng Zhou, Mingxiang Wang, Shengdong Zhang, “Degradation of Amorphous Silicon Thin Film Transistors Under Negative Gate Bias Stress,” IEEE Trans. on Electron Devices, vol. 58, no. 10, pp. 3422-3427, 2011. |
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Journals in 2010
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Dedong Han, Yi Wang, Shengdong Zhang,Li Sun,Jinfeng Kang,Xiaoyan Liu,G.Du,Lifeng Liu,Ruqi Han，“Fabrication and characteristics of ZnO Zhang MOS capacitors with high-K HfO2 gate dielectrics,” Science China-Technological Sciences, 2010. 53(9) p.2333. |
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Wei Liu, Wei Li, Peng Ren, Qinglong Lin, Shengdong Zhang and Yangyuan Wang, “An 11-Bit and 39 ps Resolution Time-to-Digital Converter for ADPLL in Digital Television,” International Journal of Electronics, to appear in Mar. 2010. |
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Wei Liu, Wei Li, Peng Ren, Chinglong Lin, Shengdong Zhang and Yangyuan Wang, “A PVT Tolerant 10 to 500 MHz All-Digital Phase-Locked Loop with Coupled TDC and DCO,” IEEE Journal of Solid-State Circuits, vol. 45, pp. 314-321, no. 2, 2010. |
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Journals in 2009 and before
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Wei Liu, Wei Li, Peng Ren, Qinglong Lin, Shengdong Zhang and Yangyuan Wang, “A time-domain digitally controlled oscillator composed of a free running ring oscillator and flying-adder,” Chinese journal of Semiconductor, vol. 30, no.9, 2009. |
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Wei Ke, Xu Han, Dingyu Li, X. Wang, T. Zhang, Ruqi Han and Shengdong Zhang, “Recessed source/drain for Sub-50 nm UTB SOI MOSFET,” Semiconductor Science and Technology, vol. 22, no. 5, pp. 577 -583, 2007. |
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D.Y. Li, Lei Sun, Shengdong Zhang, et al.，“Schottky barrier MOSFET structure with silicide source/drain on buried metal,” CHINESE PHYSICS 16 (1): 240-244 JAN 2007. |
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Wei Ke, Xu Han, B. Xu, X. Liu, X. Wang, T. Zhang, R. Han and Shengdong Zhang, “Source/drain series resistances of nanoscale ultra-thin-body SOI MOSFETs with undoped or very-low-doped channel regions,” Semiconductor Science and Technology, vol. 21, no. 10, pp. 1416-1421, 2006. |
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L. Sun , D. Y. Li, Shengdong Zhang, Xiaoyan Liu, Yi Wang and Ruqi Han,“A planar asymmetric Schottky barrier source/drain structure for nano-scale MOSFETs,” Semiconductor Science and Technology, vol. 21, no. 5, pp. 608-611, 2006. |
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Xin Lin, Shengdong Zhang, X. Wu and Mansun Chan, “Local Clustering 3-D Stacked CMOS Technology for Interconnect Loading Reduction,” IEEE Trans. on Electron Devices, vol. 53, pp. 1405-1410, no. 6, 2006. |
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X. Wu, P. C. H. Chan, Shengdong Zhang C. Feng, and M. Chan,“A Three-Dimensional Stacked Fin-CMOS Technology for High-Density ULSI Circuits”，IEEE Trans. on Electron Devices, vol. 52, pp. 1998-2003, no. 9, 2005. |
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X. Wu, P. C. H. Chan, Shengdong Zhang, C. Feng, and M. Chan, “Stacked 3-D Fin-CMOS Technology,” IEEE Electron Device Letters, Vol. 26, No. 6, pp. 416-418, June 2005. |
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X. Lin, C. Feng, Shengdong Zhang, W.-H. Ho and M. Chan, “Characterization of double gate MOSFETs fabricated by a simple method on a recrystallized silicon film,” Solid-State Electronics, Vol. 48, No. 12, pp. 2315-2319, December 2004. |
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Z. Zhang, Shengdong Zhang and M. Chan, “Self-Align Recessed Source Drain Ultra-thin Body SOI MOSFET,” IEEE Electron Device Letters, Vol. 25, No. 11, pp. 740 – 742, 2004. |
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Shengdong Zhang, Ruqi Han, X. Lin, X. Wu, and M. Chan, “A Stacked CMOS Technology on SOI Substrate,” IEEE Electron Device Letters, Vol. 25, No. 9, pp. 661-663, 2004. |
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Z. Zhang, Shengdong Zhang, C. Feng, M. Chan, “Analysis and Optimization of SDOI Structure to Maximize the Intrinsic Performance o Extremely Scaled MOSFETs,” IEEE Trans. on Electron Devices, vol.51, pp. 1095-1100, no. 7, 2004. |
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Shengdong Zhang, Ruqi Han, and Mansun Chan,“A Self-Aligned gate-all-Around MOS transistor on Single Grain Silicon,” Electrochemical and Solid-State Letters，vol. 7, no. 4, pp. G59-G61, 2004. |
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Zhikuan Zhang, Shengdong Zhang, Chuguang Feng and Mansun Chan, “An elevated source/drain-on-insulator structure to maximize the intrinsic performance extremely scaled MOSFETs,” Solid-State Electronics, vol. 47, no. 10, pp. 1829-1833, 2003. |
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Shengdong Zhang, Ruqi Han, Xinnan Lin and Mansun Chan, “An Electrically separable self-aligned double-gate MOS for dynamic threshold voltage application,” IEEE Tran. on Electron Devices, vol.50, no.11, pp. 2297-2300, 2003. |
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Shengdong Zhang, Allain Chan, Ruqi Han, and Mansun Chan, “A Viable Self-Aligned Bottom-Gate MOS Transistor Technology for Deep Sub-Micron 3-D SRAM,” IEEE Trans. on Electron Devices, vol.50, pp. 1952-1960, no. 9, 2003. |
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Shengdong Zhang, Ruqi Han, Zhikuan Zhang, Ru Huang, Ping K. Ko, and Mansun Chan, “Implementation of Fully Self-aligned Bottom-gate MOS Transistor,” IEEE Electron Device Letters, vol. 23, no. 10, 2002, pp. 618-620. |
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Shengdong Zhang, Ruqi Han, Johnny K.O. Sin and Mansun Chan, “Reduction of off-current in self-aligned double-gate TFT with mask-free symmetric LDD,” IEEE Trans. on Electron Devices, August 2002, vol. 49, no. 8, pp. 1490-1492. |
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S. Jagar, C. F. Cheng, Shengdong. Zhang, H. Wang, M. C. Poon, C. W. Kok, and M. Chan, “A SPICE Model for Thin-Film Transistors Fabricated on Grain-Enhanced Polysilicon Film,” IEEE Trans. on Electron Devices, Vol. 50, No. 4, pp. 1103-1108, April 2003. |
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Shengdong Zhang, R. Han, J. K. O. Sin, and M. Chan,“Implementation and Characterization of Self-Aligned Double-Gate TFT with Thin Channe and Thick Source/Drain”，IEEE Trans. on Electron Devices, May 2002, Vol. 49, No. 5, pp. 718-724. |
| (21) |
Shengdong Zhang, Ruqi Han, Mansun Chan,“A Novel Self-Aligned Double Gate TFT Technology,” IEEE Electron Device Letters, vol. 22, no. 11, pp. 530-532, June 2001 . |
| (22) |
Shengdong Zhang, Ruqi Han, Mansun Chan, “A Novel Self-Aligned Bottom Gate TFT with in situ LDD,” IEEE Electron Device Letters, vol. 22, no. 8, June 2001 pp. 393-395. |
| (23) |
Shengdong Zhang, Chunxiang Zhu, Sin JKO, Li JN and Mok PKT, “Ultra-thin elevated channel poly-Si TFT technology for fully-integrated AMLCD system on glass,” IEEE Trans. on Electron Devices, vol. 47, no. 3, March 2000, pp. 569-75. |
| (24) |
Shengdong Zhang, Chunxiang Zhu, Sin JKO and Mok PKT, “A novel ultrathin elevated channel low-temperature poly-Si TFT,” IEEE Electron Device Letters, vol. 20, no. 11, Nov. 1999, pp.569-71. |
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Shengdong Zhang, Sin JKO, Lai TML and Ko PK, “Numerical modeling of linear doping profiles for high-voltage thin-film SOI devices,” IEEE Trans. on Electron Devices, vol. 46, no. 5, 1999, pp.1036-41. |
| (26) |
Zhang Shengdong, Sin JKO,“A novel self-aligned bidirectional MIM diode with transparent junctions for AM-LCD’s”，IEEE Electron Device Letters, vol.19, no.6, pp. 192-194, June 1998. |
| (27) |
Shengdong Zhang, Han Ruqi, Liu Xiaoyan, Guan Xudong, Li Ting and Zhang Dachen, “ A novel sub-50 nm p-Si gate patterning technology,” Bandaoti Xubao/Chinese journal of Semiconductor, vol. 22, no. 5, 2001. |
| (28) |
张盛东，韩汝琦等，“漂移区为线形掺杂的高压薄膜SOI器件的研制”，电子学报，Vol. 20, No. 2, 2001. |
| (29) |
Shengdong Zhang, Han Ruqi, Guan Xudong, “Ultra-thin Channel Poly-Si TFT Technology,” Bandaoti Xubao/ Chinese journal of Semiconductor, no. 4, 2000. |
| (30) |
Shengdong Zhang, “An investigation on level shift characteristics for pixel electrode voltage of a-Si TFT LCD,” Acta Electronica Sinica, vol. 22, no. 8, Aug. 1994, pp. 59-64. |
