科研成果
学术成果
张冠张老师至今共发表论文165篇（SCI期刊148篇 + EI会议17篇），所有SCI论文被引用总计 3,309 次，1篇ESI高被引论文，H指数34。在发明专利方面，共拥有15个中国大陆专利，23个中国台湾的专利，13个美国专利。
Publications
（*:通讯作者）
Journal
2022
147.P. Huang, L. Li, D. J. Hsieh and K. C. Chang*, “Electro-Optic Optimization of Porcine Collagen through Protein-Amicable Supercritical Treatment”, ACS Sustainable Chemistry & Engineering, 2022, 10, 48, 16037–16045. (IF：9.224)
网页链接：https://pubs.acs.org/doi/abs/10.1021/acssuschemeng.2c05700
146.Q. Q. Ren, Y. P. Zhang, S. H. Ma, X. F, Wang, K. C. Chang, Y. M. Zhang, F. Yin, Z. G. Li*and M. Zhang*, “Low-temperature Supercritical Activation Enables High-performance Detection of Cell-Free DNA by All-carbon-nanotube Transistor”, Carbon, 2022, 196,120-127. (IF:11.037)
网页链接：https://doi.org/10.1016/j.carbon.2022.04.068
145.J. Wu, X. Liu, B. A. Malomed, K. C. Chang, M. Zhao, K. Qi, Y. Sha, Z. T. Xie, M. Clementi, C. Brès, S. Zhang, H. Fu* and Q. Li*, “Observation of SQUID-Like Behavior in Fiber Laser with Intra-Cavity Epsilon-Near-Zero Effect”, Laser & Photonics Reviews, 2022, 2200487. (IF:10.947)
144.F. Zheng, L. Li, L. Hu, X. Huang, T. Kuo and K. C. Chang*, “Self-Alignment Embedded Thin-Film Transistor with High Transparency and Optimized Performance”, Advanced Materials Technologies, 2022, 2200879. (IF:8.856)
网页链接：https://doi.org/10.1002/admt.202200879
143.F. Du, T. Xie, J. Wang, K. C. Chang, X. Lin*, F. Hou, R. Chen, A. Han and Z. Liu*, “All-HKMG-bounded SCR for Advanced ESD Protection in 14 nm FinFET Technology”, Semiconductor Science and Technology, 2022, 37(8), 085001. (IF:2.048)
网页链接：https://iopscience.iop.org/article/10.1088/1361-6641/ac773d/meta
142.K. C. Chang, Z. D. Wang, Q. Zhou, X. X. Zhang, X. N. Lin and L. Li*, “Exploration of Physicochemical Mechanism for Negative Bias Temperature Instability in GaN-HEMTs by Extracting Activation Energy of Dislocations”, Advanced Materials Interfaces, 2022, 9(24), 2200871. (IF:6.389)
网页链接：https://doi.org/10.1002/admi.202200871
141.K. C. Chang, T. J. Dai, Z. D. Wang, Z. W. Huang, X. N. Lin and L. Li*, “The observation of Gaussian Distribution and Origination Identification of Deep Defects in AlGaN/GaN MIS-HEMT”, Applied Physics Letters, 2022, 120(17), 172107. (IF:3.971)
网页链接：https://doi.org/10.1063/5.0088928
140.F. Du, K. C. Chang, X. Lin*, F. Hou, Y. Zhang, A. Han, X. Luo and Z. Liu*, “Compact and Fast Response Dual-Directional SCR for Nanoscale ESD Protection Engineering”, IEEE Transactions on Electron Devices, 2022, 69(6), 3490–3493. (IF:3.221)
网页链接：https://doi.org/10.1109/TED.2022.3163238
2021
139.P. Huang, K. C. Chang, J. Ge, C. Peng, X. Wu*, J. Chen and Z. Lin, “Offset-Compensation High-Performance Sense Amplifier for Low-Voltage DRAM Based on Current Mirror and Switching Point”, IEEE Transactions on Circuits and Systems II: Express Briefs, 2021, 69(4), 2011–2015. (IF:3.691)
网页链接：10.1109/TCSII.2022.3143504
138.J. Zhang, M. Zhang*, K. C. Chang, Z. Rong, Y. Zhang, S. Zhang and M. Chan, “Analysis of Carrier Behavior for Amorphous Indium Gallium Zinc Oxide after Supercritical Carbon Dioxide Treatment”, Advanced Materials Interfaces, 2021, 9(14), 2102349. (IF:6.389)
网页链接：https://doi.org/10.1002/admi.202102349
137.K. C. Chang, Q. Zhou, K. Liu, L. Li*, R. Zhang, H.-J. Liu* and T.-P. Kuo, “Eco-Friendly, Highly Efficient Ethanol-Assisted Supercritical Preparation of an Ultrathin ZnO Nanotube”, ACS Sustainable Chemistry & Engineering, 2021, 9(46), 15478–15483. (IF: 9.224)
网页链接：https://doi.org/10.1021/acssuschemeng.1c04875
136.Z. Peng, F. Wu, L. Jiang, G. Cao, B. Jiang, G. Cheng, S. Ke, K. C. Chang*, L. Li, and C. Ye*, “HfO2-Based Memristor as an Artificial Synapse for Neuromorphic Computing with Tri-Layer HfO2/BiFeO3/HfO2 Design”, Advanced Functional Materials, 2021, 31(48), 2107131. (IF:19.924)
网页链接：https://doi.org/10.1002/adfm.202107131
135.L. Hu, L. Li, K. C. Chang*, X. Lin, P. Huang and S. Zhang, “Ultrasensitive Freestanding and Mechanically Durable Artificial Synapse with Attojoule Power Based on Na‐Salt Doped Polymer for Biocompatible Neuromorphic Interface”, Advanced Functional Materials, 2021, 31(42), 2106015. (IF:19.924)
网页链接：https://doi.org/10.1002/adfm.202106015
134.L. Li, L. D. Hu, K. Liu, K. C. Chang*, R. Zhang, X. Lin, S. D. Zhang, P. Huang, H. J. Liu and T. P. Kuo, “Bifunctional Homologous Alkali-metal Artificial Synapse with Regenerative Ability and Mechanism Imitation of Voltage-gated Ion Channels”, Material Horizons, 2021, 8(11), 3072-3081. (IF:15.717)
网页链接：https://doi.org/10.1039/D1MH01012C
133.K. C. Chang, K. Liu, L. D. Hu, L. Li*, X. Lin, S. D. Zhang, R. Zhang, H. J. Liu and T. P. Kuo, “Supercritical Ammoniation-Enabled Interfacial Polarization for Function-Mode Transformation and Overall Optimization of Thin-Film Transistors”, ACS Applied Materials and Interfaces, 2021, 13(33), 40053–40061. (IF:10.383)
网页链接：https://doi.org/10.1021/acsami.1c09673
132.J. Wu, X. Liu, H. Fu, K. C. Chang, S. Zhang, H. Y. Fu and Q. Li*, “Manipulation of epsilon-near-zero wavelength for the optimization of linear and nonlinear absorption by supercritical fluid”, Scientific Reports, 2021, 11(1), 15936. (IF:4.997)
网页链接：https://www.nature.com/articles/s41598-021-95513-6
131.Z. Xin, Y. Tan, T. Chen, E. Iranmanesh, L. Li, K. C. Chang*, S. Zhang, C. Liu and H. Zhou*, “Visible-light-stimulated Synaptic InGaZnO Phototransistors Enabled by Wavelength-tunable Perovskite Quantum Dots”, Nanoscale Advances, 2021, 3(17), 5046–5052. (IF:5.598)
网页链接：https://pubs.rsc.org/en/content/articlehtml/2021/na/d1na00410g
130.F. Du, K. C. Chang, X. Lin*, F. Hou, L. Chen, X. Luo and Z. Liu*, “Novel Symmetrical Dual-Directional SCR with p-Type Guard Ring for High-Voltage ESD Protection”, IEEE Transactions on Electron Devices, 2021, 68(8), 4164–4167. (IF:3.221)
129.L. Li, T. J. Dai, K. Liu, K. C. Chang*, R. Zhang, X. Lin, H. J. Liu, Y. C. Lai and T. P. Kuo, “Achieving Complementary Resistive Switching and Multi-Bit Storage Goals by Modulating the Dual-Ion Reaction through Supercritical Fluid-Assisted Ammoniation”, Nanoscale, 2021, 13(33), 14035–14040. (IF:8.307)
网页链接：https://doi.org/10.1039/D1NR03356E
128.M. Li, W.-Y. Cheng, Y.-C. Li, H.-M. Wu, Y.-C. Wu, H.-W. Lu, S.-L. Cheng, L. Li, K. C. Chang, H.-J. Liu, Y.-F. Lin*, L.-Y. Lin* and Y.-C. Lai*, “Deformable, resilient, and Mechanically-Durable Triboelectric Nanogenerator Based on Recycled Coffee Waste for Wearable Power and Self-Powered Smart Sensors”, Nano Energy, 2021, 79, 1054054. (IF:19.069)
网页链接：https://doi.org/10.1016/j.nanoen.2020.105405
127.X. F. Wang, K. C. Chang, Z. W. Zhang, Q, Liu, L. Lei, S. H. Ma and M. Zhang*, “Performance Enhancement and Mechanism Exploration of All-Carbon-Nanotube Memory with Hydroxylation and Dehydration Through Supercritical Carbon Dioxide”, Carbon, 2021, 173, 97-104. (IF:11.307)
网页链接：https://doi.org/10.1016/j.carbon.2020.10.084
126.J. N. Zhang, W. H. Huang, K. C. Chang, Y. H. Shi, C. B. Zhao, X. W. Wang, H, Meng, S. D. Zhang and M. Zhang*, “Performance Enhancement and Bending Restoration for Flexible Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors by Low-Temperature Supercritical Dehydration Treatment”, ACS Applied Materials & Interfaces, 2021, 13(7), 8584-8594. (IF:10.383)
网页链接：https://doi.org/10.1021/acsami.0c21611
125.K. C. Chang*, L. D. Hu, K. Qi, L. Li, X. N. Lin, S. D Zhang, Z. W. Wang, Y. C. Lai, H. J. Liu and T. P. Kuo, “Low-temperature supercritical dehydroxylation for achieving an ultra-low subthreshold swing of thin-film transistors”, Nanoscale, 2021, 13(11), 5700-5705. (IF:8.307)
DOI:10.1039/D0NR08208B
文章网页链接：https://doi.org/10.1039/D0NR08208B
124.L. D. Hu, H. J. Lou*, W. T. Li, K. C. Chang* and X. N. Lin*, “Suppression of Statistical Variability in Junctionless FinFET Using Accumulation-Mode and Charge Plasma Structure”, IEEE Transactions on Electron Devices, 2021, 68(1), 399-404. (IF:3.221)
DOI:10.1109/TED.2020.3040137
文章网页链接：https://doi.org/10.1109/TED.2020.3040137
2020
123.Y. Shi, Y. Zheng, J. Wang, R. Zhao, T. Wang, C. Zhao, K. C. Chang, H. Meng, X. Wang, “Hysteresis-Free, High-Performance Polymer-Dielectric Organic Field-Effect Transistors Enabled by Supercritical Fluid”, Research, 2020, 6587102. (IF：11.036)
文章网页链接：https://doi.org/10.34133/2020/6587102
122.M. H. Liu, Z. W. Zhang, K. C. Chang, X. N. Lin, L. Li and Y. F. Jin*, “Characterization and optimization of AlGaN/GaN metal-insulator semiconductor heterostructure field effect transistors using supercritical CO2/H2O technology”, Chinese Physics B, 2020, 29(12), 127101. (IF:1.652)
DOI:10.1088/1674-1056/abb22f
文章网页链接：https://doi.org/10.1088/1674-1056/abb22f
121.Y. X. Liu, C. Ye*, K. C. Chang, L. Li, B. Jiang, C. Xia, L. Liu, X. Zhang, X. Y. Liu, T. Xia, Z. H. Peng, G. S. Cao, G. Cheng, S. W. Ke and J. H. Wang, “A Robust and Low-Power Bismuth Doped Tin Oxide Memristor Derived from Coaxial Conductive Filaments”, Small, 2020, 16(46), 2004619. (IF:15.153)
DOI:10.1002/smll.202004619
文章网页链接：https://doi.org/10.1002/smll.202004619
120.K. C. Chang, T. J. Dai, L. Li*, X. N. Lin*, S. D. Zhang, Y. C. Lai, H. J. Liu and Y. E. Syu, “Unveiling the influence of surrounding materials and realization of multi-level storage in resistive switching memory”, Nanoscale, 2020, 12(43), 22070-22074. (IF:8.307)
DOI:10.1039/d0nr05900e
文章网页链接：https://doi.org/10.1039/d0nr05900e
119.K. Qi, L. Li, K. C. Chang*, X. N. Lin*, Y. C. Lai, H. T. Zheng, G. Y. Huang and T. P. Kuo, “Supercritical Removal Method: Rapid Elimination of Impurities in Polymethyl-methacrylate at Near Room Temperature and Mechanism Investigation of Insulating Property Improvement”, Journal of Materials Chemistry C, 2020, 8(44), 15664-15668. (IF:8.067)
DOI:10.1039/D0TC03975F
文章网页链接：https://doi.org/10.1039/D0TC03975F
118.L. Li, K. C. Chang*, X. N. Lin*, Y. C. Lai, R. Zhang and T. P. Kuo, “Variable-temperature activation energy extraction to clarify the physical and chemical mechanisms of the resistive switching process”, Nanoscale, 2020, 12(29), 15721-15724. (IF:8.307)
DOI:10.1039/d0nr04053c
文章网页链接：https://doi.org/10.1039/d0nr04053c
117.L. Li, K. C. Chang*, C. Ye*, X. Lin, R. Zhang, Z. Xu, W. Xiong, Y. Zhou and T. P. Kuo, “An Indirect Way to Achieve Comprehensive Performance Improvement of Resistive Memory: When Hafnium Meets ITO in Electrode”, Nanoscale, 2020, 12(5), 3267-3272. (IF: 8.307)
DOI:10.1039/c9nr08943h
文章网页链接：https://doi.org/10.1039/c9nr08943h
2019
116.C. Ye, Z. Xu, K. C. Chang*, L. Li*, X. N. Lin, R. Zhang, Y. Zhou, W. Xiong and T. P. Kuo, “Hafnium nanocrystals observed in a HfTiO compound film bring about excellent performance of flexible selectors in memory integration”, Nanoscale, 2019, 11(43), 20792-20796. (IF: 8.307)
DOI:10.1039/C9NR07470H
文章网页链接：https://doi.org/10.1039/C9NR07470H
115.L. Li, K. C. Chang*, X. N. Lin, R. Zhang and J. H. Lou, “Insulating Property Improvement of Polyimide in Devices by Low‐Temperature Supercritical Fluids”, Advanced Electronic Materials, 2019, 5(12), 1900580. (IF:7.633)
DOI:10.1002/aelm.201900580
文章网页链接：https://doi.org/10.1002/aelm.201900580
114.Z. W. Zhang, M. Zhang*, C. H. Du, L. Li and K. C. Chang, “Improving Performance of All-Carbon-Nanotube Thin-Film Transistors by Low Temperature Supercritical CO2 Fluid Activation”, IEEE Electron Device Letters, 2019, 40(6), 921-924. (IF:4.816)
DOI:10.1109/LED.2019.2912197
文章网页链接：https://doi.org/10.1109/LED.2019.2912197
2018
113.L. Zhang, H. Huang, C. Ye*, K. C. Chang, R. L. Zhang, Q. Xia, X. D. Wei, W. Wei and W. F. Wang, “Exploration of highly enhanced performance and resistive switching mechanism in hafnium doping ZnO memristive device”, Semiconductor Science and Technology, 2018, 33(8), 085013. (IF:2.048)
DOI:10.1088/1361-6641/aacff1
文章网页链接：https://doi.org/10.1088/1361-6641/aacff1
112.Y. P. Li, H. Q. Wang*, T. J. Chu, Y. C. Li, X. J. Li, X. X. Liao, X. D. Wang, H. Zhou, J. Y. Kang, K. C. Chang, T. C. Chang*, T. M. Tsai and J. C. Zheng*, “Tuning the nanostructures and optical properties of undoped and N-doped ZnO by supercritical fluid treatment”, AIP Advances, 2018, 8(5), 055310. (IF:1.697)
DOI:10.1063/1.5026446
文章网页链接：https://doi.org/10.1063/1.5026446
111.R. C. Wang*, Y. W. Chen, T. C. Chang, K. C. Chang and T. M. Tsai, “ZnO/N:ZnO core-shell nanorods prepared via supercritical CO2-N process: Tunable doping and response reversal phenomena for gas sensing”, Ceramics International, 2018, 44(6), 7296-7299. (IF:5.532)
DOI:10.1016/j.ceramint.2018.01.018
文章网页链接：https://doi.org/10.1016/j.ceramint.2018.01.018
110.K. H. Chen*, T. M. Tsai, C. M. Cheng*, S. J. Huang, K. C. Chang, S. P. Liang and T. F. Young, “Schottky Emission Distance and Barrier Height Properties of Bipolar Switching Gd:SiOx RRAM Devices under Different Oxygen Concentration Environments”, Materials, 2018, 11(1), 43. (IF:3.748)
DOI:10.3390/ma11010043
文章网页链接：https://doi.org/10.3390/ma11010043
109.Q. Xia, J. J. Wu, C. H. Pan, C. Ye*, K. C. Chang, T. C. Chang, C. C. Shih and C. H. Wu, “Impact of Forming Compliance Current on Storage Window Induced by a Gadolinium Electrode in Oxide-Based Resistive Random Access Memory”, IEEE Transactions on Electron Devices, 2018, 65(1), 96-100. (IF:3.221)
DOI:10.1109/TED.2017.2775104
文章网页链接：https://doi.org/10.1109/TED.2017.2775104
2017
108.F. Y. Yuan, N. Deng*, C. C. Shih, Y. T. Tseng, T. C. Chang*, K. C. Chang, M. H. Wang, W. C. Chen, H. X. Zheng, H. Q. Wu, H. Qian and S. M. Sze, “Conduction Mechanism and Improved Endurance in HfO2-Based RRAM with Nitridation Treatment”, Nanoscale Research Letters, 2017, 12(1), 574. (IF:5.418)
DOI:10.1186/s11671-017-2330-3
文章网页链接：https://doi.org/10.1186/s11671-017-2330-3
107.H. L. Chen, P. H. Chen, T. C. Chang*, T. F. Young*, M. C. Wang, C. F. Ai, T. M. Tsai, K. C. Chang, M. C. Chen, Y. T. Su, C. C. Yang and C. C. Lin, “Super Critical Fluid Technique to Enhance Current Output on Amorphous Silicon-Based Photovoltaic”, IEEE Electron Device Letters, 2017, 38(10), 1401-1404. (IF:4.816)
DOI:10.1109/LED.2017.2747096
文章网页链接：https://doi.org/10.1109/LED.2017.2747096
106.H. C. Chiang, T. C. Chang*, P. Y. Liao, B. W. Chen, Y. C. Tsao, T. M. Tsai, Y. C. Chien, Y. C. Yang, K. F. Chen, C. L. Yang, Y. J. Hung, K. C. Chang, S. D. Zhang, S. C. Lin and C. Y. Yeh, “Investigating Degradation Behaviors Induced by Mobile Cu Ions under High Temperature Negative Bias Stress in a-InGaZnO Thin Film Transistors”, Applied Physics Letters, 2017, 111(13), 133504. (IF:3.971)
DOI:10.1063/1.5004526
文章网页链接：https://doi.org/10.1063/1.5004526
105.Y. T. Tseng, P. H. Chen, T. C. Chang*, K. C. Chang*, T. M. Tsai, C. C. Shih, H. C. Huang, C. C. Yang, C. Y. Lin, C. H. Wu, H. X. Zheng, S. D. Zhang and S. M. Sze, “Solving the Scaling Issue of Increasing Forming Voltage in Resistive Access Memory Using High-k Spacer Structure”, Advanced Electronic Materials, 2017, 3(9), 1700171. (IF:7.633)
DOI:10.1002/aelm.201700171
文章网页链接：https://doi.org/10.1002/aelm.201700171
104.C. H. Wu, C. H. Pan, P. H. Chen, T. C. Chang*, T. M. Tsai, K. C. Chang, C. C. Shih, T. Y. Chi, T. J. Chu, J. J. Wu, X. Q. Du, H. X. Zheng and S. M. Sze, “Inert Pt Electrode Switching Mechanism After Controlled Polarity-forming Process in In2O3-based Resistive Random Access Memory”, Applied Physics Express, 2017, 10(9), 094102. (IF:2.819)
DOI:10.7567/APEX.10.094102
文章网页链接：https://doi.org/10.7567/APEX.10.094102
103.P. H. Chen, T. C. Chang*, K. C. Chang*, T. M. Tsai, C. H. Pan, C. C. Shih, C. H. Wu, C. C. Yang, W. C. Chen, J. C. Lin, M. H. Wang, H. X. Zheng, M. C. Chen and S. M. Sze, “Effects of Plasma Treatment Time on Surface Characteristics of Indium-Tin-Oxide Film for Resistive Switching Storage Applications”, Applied Surface Science, 2017, 414, 224-229. (IF:7.392)
DOI:10.1016/j.apsusc.2017.04.060
文章网页链接：https://doi.org/10.1016/j.apsusc.2017.04.060
102.B. W. Chen, H. L. Chen, T. C. Chang*, Y. J. Hung, S. P. Huang, Y. Z. Zheng, Y. H. Lin, P. Y. Liao, L. H. Chen, J. W. Yang, H. C. Chiang, W. C. Su, Y. C. Tsao, A. K. Chu, H. W. Li, C. H. Tsai, H. H. Lu, K. C. Chang and T. F Young, “Systematic Analysis of High-Current Effects in Flexible Polycrystalline-Silicon Transistors Fabricated on Polyimide”, IEEE Transactions on Electron Devices, 2017, 64(8), 3167-3173. (IF:3.221)
DOI:10.1109/TED.2017.2715500
文章网页链接：https://doi.org/10.1109/TED.2017.2715500
101.C. Y. Lin, P. H. Chen, T. C. Chang*, K. C. Chang*, S. D. Zhang, T. M. Tsai, C. H. Pan, M. C. Chen, Y. T. Su, Y. T. Tseng, Y. F. Chang, Y. C. Chen, H. C. Huang and S. M. Sze, “Attaining Resistive Switching Characteristics and Selector Properties by Varying Forming Polarities in a Single HfO2-based RRAM Device with a Vanadium Electrode”, Nanoscale, 2017, 9(25), 8586-8590. (IF:8.307)
DOI:10.1039/c7nr02305g
文章网页链接：https://doi.org/10.1039/c7nr02305g
100.Y. H. Lu, T. C. Chang*, L. H. Chen, Y. S. Lin, X. W. Liu, J. C. Liao, C. Y. Lin, C. H. Lien, K. C. Chang* and S. D. Zhang, “Abnormal Recovery Phenomenon Induced by Hole Injection During Hot Carrier Degradation in SOI n-MOSFETs”, IEEE Electron Device Letters, 2017, 38(7), 835-838. (IF:4.816)
DOI:10.1109/LED.2017.2703309
文章网页链接：https://doi.org/10.1109/LED.2017.2703309
99.P. Y. Liao, T. C. Chang*, W. C. Su, B. W. Chen, L. H. Chen, T. Y. Hsieh, C. Y. Yang, K. C. Chang*, S. D. Zhang, Y. Y. Huang, H. M. Chang and S. C. Chiang, “Impact of Repeated Uniaxial Mechanical Strain on Flexible a-IGZO Thin Film Transistors with Symmetric and Asymmetric Structures”, Applied Physics Letters, 2017, 110(26), 263505. (IF:3.971)
DOI:10.1063/1.4990964
文章网页链接：https://doi.org/10.1063/1.4990964
98.X. Q. Du, X. J. Wu, T. C. Chang*, K. C. Chang*, C. H. Pan, C. H. Wu, Y. S. Lin, P. H. Chen, S. D. Zhang and S. M. Sze, “Recovery of Failed Resistive Switching Random Access Memory Devices by a Low-temperature Supercritical Treatment”, Applied Physics Express, 2017, 10(6), 064001. (IF:2.819)
DOI:10.7567/APEX.10.064001
文章网页链接：https://doi.org/10.7567/APEX.10.064001
97.C. Y. Lin, T. C. Chang*, K. J. Liu, L. H. Chen, J. Y. Tsai, C. E. Chen, Y. H. Lu, H. W. Liu, J. C. Liao and K. C. Chang*, “Analysis of Contrasting Degradation Behaviors in Channel and Drift Regions Under Hot Carrier Stress in PDSOI LD N-Channel MOSFETs”, IEEE Electron Device Letters, 2017, 38(6), 705-707. (IF:4.816)
DOI:10.1109/LED.2017.2694972
文章网页链接：https://doi.org/10.1109/LED.2017.2694972
96.Y. X. Zhou, Y. Li, Y. T. Su, Z. R. Wang, L. Y. Shih, T. C. Chang*, K. C. Chang, S. B. Long, S. M. Sze and X. S. Miao*, “Nonvolatile Reconfigurable Sequential Logic in a HfO2 Resistive Random Access Memory Array”, Nanoscale, 2017, 9(20), 6649-6657. (IF:8.307)
DOI:10.1039/c7nr00934h
文章网页链接：https://doi.org/10.1039/c7nr00934h
95.P. Y. Liao, T. C. Chang*, Y. J. Chen, W. C. Su, B. W. Chen, L. H. Chen, T. Y. Hsieh, C. Y. Yang, K. C. Chang*, S. D. Zhang, Y. Y. Huang, H. M. Chang and S. C. Chiang, “The Effect of Device Electrode Geometry on Performance After Hot-Carrier Stress in Amorphous In-Ga-Zn-O Thin Film Transistors with Different Via-Contact Structures”, Applied Physics Letters, 2017, 110(20), 202103. (IF:3.971)
DOI:10.1063/1.4983713
文章网页链接：https://doi.org/10.1063/1.4983713
94.C. H. Wu, T. C. Chang*, T. M. Tsai, K. C. Chang*, T. J. Chu, C. H. Pan, Y. T. Su, P. H. Chen, S. K. Lin, S. J. Hu and S. M. Sze, “Effect of Charge Quantity in Conduction Mechanism of High- and Low-Resistance States During Forming Process in a One-Transistor-One-Resistor Resistance Random Access Memory”, Applied Physics Express, 2017, 10(5), 054101. (IF:2.819)
DOI:10.7567/APEX.10.054101
文章网页链接：https://doi.org/10.7567/APEX.10.054101
93.W. C. Su, T. C. Chang*, P. Y. Liao, Y. J. Chen, B. W. Chen, T. Y. Hsieh, C. L. Yang, Y. Y. Huang, H. M. Chang, S. C. Chiang, K. C. Chang* and T. M. Tsai, “The Effect of Asymmetrical Electrode Form After Negative Bias Illuminated Stress in Amorphous IGZO Thin Film Transistors”, Applied Physics Letters, 2017, 110(15), 159901. (IF:3.971)
DOI:10.1063/1.4979076
文章网页链接：https://doi.org/10.1063/1.4979076
92.B. W. Chen, T. C. Chang*, K. C. Chang*, Y. J. Hung, S. P. Huang, H. M. Chen, P. Y. Liao, Y. H. Lin, H. C. Huang, H. C. Chiang, C. L. Yang, Y. Z. Zheng, A. K. Chu, H. W. Li, C. H. Tsai, H. H. Lu, T. T. J. Wang and T. C. Chang, “Surface Engineering of Polycrystalline Silicon for Long-Term Mechanical Stress Endurance Enhancement in Flexible Low Temperature Poly-Si Thin-Film Transistors”, ACS Applied Materials & Interfaces, 2017, 9(13), 11942-11949. (IF:10.383)
DOI:10.1021/acsami.6b14525
文章网页链接：https://doi.org/10.1021/acsami.6b14525
91.Y. C. Chien, T. C. Chang*, H. C. Chiang, H. M. Chen, Y. C. Tsao, C. C. Shih, B. W. Chen, P. Y. Liao, T. Y. Chu, Y. C. Yang, Y. J. Hung, T. M. Tsai and K. C. Chang*, “Roel of H2O Molecules in Passivation of a-InGaZnO Thin Film Transistors”, IEEE Electron Device Letters, 2017, 38(4), 469-472. (IF:4.816)
DOI:10.1109/LED.2017.2666198
文章网页链接：https://doi.org/10.1109/LED.2017.2666198
90.T. M. Tsai*, C. H. Wu, K. C. Chang, C. H. Pan, P. H. Chen, N. K. Lin, J. C. Lin, Y. S. Lin, W. C. Chen, H. Q. Wu, N. Deng and H. Qian, “Controlling the Degree of Forming Soft-Breakdown and Producing Superior Endurance Performance by Inserting BN-Based Layers in Resistive Random Access Memory”, IEEE Electron Device Letters, 2017, 38(4), 445-448. (IF:4.816)
DOI:10.1109/LED.2017.2664881
文章网页链接：https://doi.org/10.1109/LED.2017.2664881
89.W. C. Chen, T. M. Tsai*, K. C. Chang*, H. L. Chen, C. C. Shih, C. C. Yang, J. C. Lin, Y. S. Lin, Y. T. Su and P. H. Chen, “Influence of Ammonia on Amorphous Carbon Resistive Random Access Memory”, IEEE Electron Device Letters, 2017, 38(4), 453-456. (IF:4.816)
DOI:10.1109/LED.2017.2668463
文章网页链接：https://doi.org/10.1109/LED.2017.2668463
88.K. H. Chen*, C. M. Cheng, M. C. Kao, K. C. Chang, T. C. Chang, T. M. Tsai, S. Wu and F. Y. Su, “Influence of Thermal Annealing Treatment on Bipolar Switching Properties of Vanadium Oxide Thin-Film Resistance Random-Access Memory Devices”, Journal of Electronic Materials, 2017, 46(4), 2147-2152. (IF:2.047)
DOI:10.1007/s11664-016-5148-3
文章网页链接：https://doi.org/10.1007/s11664-016-5148-3
87.Z. R. Wang, Y. T. Su, Y. Li, Y. X. Zhou, T. J. Chu, K. C. Chang, T. C. Chang*, T. M. Tsai, S. M. Sze and X. S. Miao, “Functionally Complete Boolean Logic in 1T1R Resistive Random Access Memory”, IEEE electron Device Letters, 2017, 38(2), 179-182. (IF:4.816)
DOI:10.1109/LED.2016.2645946
文章网页链接：https://doi.org/10.1109/LED.2016.2645946
86.P. H. Chen, T. C. Chang*, K. C. Chang, T. M. Tsai*, C. H. Pan, M. C. Chen, Y. T. Su, C. Y. Lin, Y. T. Tseng, H. C. Huang, H. Q. Wu, N. Deng, H. Qian and S. M. Sze, “Resistance Switching Characteristic Induced by O2 Plasma Treatment of an Indium Tin Oxide Film for Use as an Insulator in Resistive Random Access Memory”, ACS Applied Materials & Interfaces, 2017, 9(3), 3149-3155.(IF:10.383)
DOI:10.1021/acsami.6b14282
文章网页链接：https://doi.org/10.1021/acsami.6b14282
85.Y. T. Su, T. C. Chang*, T. M. Tsai, K. C. Chang, T. J. Chu, H. L. Chen, M. C. Chen, C. C. Yang, H. C. Huang, I. Lo, J. C. Zheng and S. M. Sze, “Suppression of Endurance Degradation by Applying Constant Voltage Stress in One-Transistor and One-Resistor Resistive Random Access Memory”, Japanese Journal of Applied Physics, 2017, 56(1), 010303. (IF:1.491)
DOI:10.7567/JJAP.56.010303
文章网页链接：https://doi.org/10.7567/JJAP.56.010303
84.C. Ye, J. J. Wu, C. H. Pan, T. M. Tsai*, K. C. Chang, H. Q. Wu, N. Deng and H. Qian, “Boosting the Performance of Resistive Switching Memory with a Transparent ITO Electrode Using Supercritical Fluid Nitridation”, RSC Advances, 2017, 7(19), 11585-11590. (IF:4.036)
DOI:10.1039/c7ra01104k
文章网页链接：https://doi.org/10.1039/c7ra01104k
2016
83.Y. Li, Y. X. Zhou, L. Xu, K. Lu, Z. R. Wang, N. Duan, L. Jiang, L. Cheng, T. C. Chang, K. C. Chang, H. J. Sun, K. H. Xue and X. S. Miao*, “Realization of Functional Complete Stateful Boolean Logic in Memristive Crossbar”, ACS Applied Materials & Interfaces, 2016, 8(50), 34559-34567. (IF:10.383)
DOI:10.1021/acsami.6b11465
文章网页链接：https://doi.org/10.1021/acsami.6b11465
82.P. H. Chen, T. C. Chang*, K. C. Chang, T. M. Tsai*, C. H. Pan, C. C. Shih, C. H. Wu, C. C. Yang, Y. T. Su, C. Y. Lin, Y. T. Tseng, M. C. Chen, R. C. Wang, C. C. Leu, K. H. Chen, I. Lo, J. C. Zheng and S. M. Sze, “Obtaining Lower Forming Voltage and Self-Compliance Current by Using a Nitride Gas/Indium-Tin Oxide Insulator in Resistive Random Access Memory”, IEEE Transactions on Electron Devices, 2016, 63(12), 4769-4775. (IF: 3.221)
DOI:10.1109/TED.2016.2619704
文章网页链接：https://doi.org/10.1109/TED.2016.2619704
81.P. H. Chen, T. C. Chang*, T. M. Tsai*, K. C. Chang, T. J. Chu, C. C. Shih, C. Y. Lin, P. H. Chen, H. Q. Wu, N. Deng, H. Qian and S. M. Sze, “Ultralow Power Resistance Random Access Memory Device and Oxygen Accumulation Mechanism in an Indilm-Tin-Oxide Electrode”, IEEE Transactions on Electron Devices, 2016, 63(12),4737-4743. (IF:3.221)
DOI:10.1109/TED.2016.2615807
文章网页链接：https://doi.org/10.1109/TED.2016.2615807
80.N. C. Chuang*, J. T. Lin, T. C. Chang, T. M. Tsai, K. C. Chang and C. W. Wu, “The Film Thickness Effect on Electrical Conduction Mechanisms and Characteristics of the Ni-Cr Thin Film Resistor”, IEEE Journal of the Electron Devices Society, 2016, 4(6), 441-444. (IF:2.523)
DOI:10.1109/JEDS.2016.2598189
文章网页链接：https://doi.org/10.1109/JEDS.2016.2598189
79.P. H. Chen, K. C. Chang, T. C. Chang*, T. M. Tsai*, C. H. Pan, Y. T. Su, C. H. Wu, W. C. Su, C. C. Yang, M. C. Chen, C. H. Tu, K. H. Chen, I. Lo, J. C. Zheng and S. M. Sze, “Modifying Indium-Tin-Oxide by Gas Cosputtering for Use as an Insulator in Resistive Random Access Memory”, IEEE Transactions on Electron Devices, 2016, 63(11), 4288-4294. (IF:3.221)
DOI:10.1109/TED.2016.2609642
文章网页链接：https://doi.org/10.1109/TED.2016.2609642
78.C. H. Pan, T. C. Chang*, T. M. Tsai, K. C. Chang*, P. H. Chen, S. W. Chang-Chien, M. C. Chen, H. C. Huang, H. Q. Wu and N. Deng, “Engineering Interface-Type Resistance Switching Based on Forming Current in ITO/Ga2O3:ITO/TiN Resistance Random Access Memory: Conduction Mechanisms, Temperature Effects, and Electrode Influence”. Applied Physics Letters, 2016, 109(18), 183509. (IF:3.971)
DOI:10.1063/1.4966181
文章网页链接：https://doi.org/10.1063/1.4966181
77.C. C. Shih, W. J. Chen, K. C. Chang, T. C. Chang*, T. M. Tsai*, T. J. Chu, Y. T. Tseng, C. H. Wu, W. C. Su, M. C. Chen, H. C. Huang, M. H. Wang, J. H. Chen, J. C. Zheng and S. M. Sze, “Ultra-Low Switching Voltage Induced by Inserting SiO2 Layer in Indium-Tin-Oxide-Based Resistance Random Access Memory”. IEEE Electron Device Letters. 2016, 37(10), 1276-1279. (IF:4.816)
DOI:10.1109/LED.2016.2599218
文章网页链接：https://doi.org/10.1109/LED.2016.2599218
76.C. H. Pan, T. C. Chang*, T. M. Tsai, K. C. Chang, T. J. Chu, P. H. Chen, M. C. Chen and S. M. Sze, “Adjustable Built-in Resistor on Oxygen-Vacancy-Rich Electrode-Capped Resistance Random Access Memory”, Applied Physics Express, 2016, 9(10), 104201. (IF:2.819)
DOI:10.7567/APEX.9.104201
文章网页链接：https://doi.org/10.7567/APEX.9.104201
75.C. H. Pan, T. C. Chang*, T. M. Tsai, K. C. Chang, T. J. Chu, W. Y. Lin, M. C. Chen and S. M. Sze, “Confirmation of Filament Dissolution Behavior by Analyzing Electrical Field Effect During Reset Process in Oxide-Based RRAM”, Applied Physics Letters, 2016, 109(13), 133503. (IF:3.917)
DOI:10.1063/1.4963672
文章网页链接：https://doi.org/10.1063/1.4963672
74.H. R. Chen, Y. C. Chen*, T. C. Chang*, K. C. Chang, T. M. Tsai, T. J. Chu, C. C. Shih, N. C. Chuang and K. Y. Wang, “Mechanisms of Low-Temperature Nitridation Technology on a TaN Thin Film Resistor for Temperature Sensor Applications”, Nanoscale Research Letters, 2016, 11,275. (IF:5.418)
DOI:10.1186/s11671-016-1480-z
文章网页链接：https://doi.org/10.1186/s11671-016-1480-z
73.T. C. Chang*, K. C. Chang, T. M. Tsai, T. J. Chu and S. M. Sze, “Resistance Random Access Memory”, Materials Today, 2016,19(5), 254-264. (IF:26.943)
DOI:DOI：10.1016/j.mattod.2015.11.009
文章网页链接：https://doi.org/DOI：10.1016/j.mattod.2015.11.009
72.F. Y. Jin, K. C. Chang, T. C. Chang*, T. M. Tsai, C. H. Pan, C. Y. Lin, P. H. Chen, M. C. Chen, H. C. Huang, I. Lo, J. C. Zheng and S. M. Sze, “Reducing Operation Voltages by Introducing a Low-K Switching Layer in Indium-Tin-Oxide-Based Resistance Random Access Memory”, Applied Physics Express, 2016, 9(6), 061501. (IF:2.819)
DOI:10.7567/APEX.9.061501
文章网页链接：https://doi.org/10.7567/APEX.9.061501
71.H. X. Zheng, T. C. Chang*, K. C. Chang, T. M. Tsai, C. C. Shih, R. Zhang, K. H. Chen, M. H. Wang, J. C. Zheng, I. Lo, C. H. Wu, Y. T. Tseng and S. M. Sze, “Complementary Resistive Switching Behavior for Conductive Bridge Random Access Memory”, Applied Physics Express, 2016, 9(6), 064201. (IF:2.819)
DOI:10.7567/APEX.9.064201
文章网页链接：https://doi.org/10.7567/APEX.9.064201
70.P. H. Chen, K. C. Chang, T. C. Chang*, T. M. Tsai*, C. H. Pan, C. Y, Lin, F. Y. Jin, M. C. Chen, H. C. Huang, M. H. Wang, I. Lo, J. C. Zheng and S. M. Sze, “Improving Performance by Doping Gadolinium into the Indium-Tin-Oxide Electrode in HfO2-Based Resistive Random Access Memory”, IEEE Electron Device Letters, 2016, 37(5), 584-587. (IF:4.816)
DOI:10.1109/LED.2016.2548499
文章网页链接：https://doi.org/10.1109/LED.2016.2548499
69.K. H. Chen*, K. C. Chang, T. C. Chang*, T. M. Tsai, S. P. Liang, T. F. Young, Y. E. Syu and S. M. Sze, “Illumination Effect on Bipolar Properties of Gd:SiO2 RRAM Devices Using Transparent Indium Tin Oxide Electrode”, Nanoscale Research Letters, 2016, 11, 224. (IF:5.418)
DOI:10.1186/s11671-016-1431-8
文章网页链接：https://doi.org/10.1186/s11671-016-1431-8
68.T. M. Tsai, K. C. Chang*, T. C. Chang*, R. Zhang, T. Wang, C. H. Pan, K. H. Chen, H. M. Chen, M. C. Chen, T. Y. Tseng, P. H. Chen, I. Lo, J. C. Zheng, J. C. Lou and S. M. Sze, “Resistive Switching Mechanism of Oxygen-Rich Indium Tin Oxide Resistance Random Access Memory”, IEEE electron Device Letters, 2016, 37(4), 408-411. (IF: 4.816)
DOI:10.1109/LED.2016.2532883
文章网页链接：https://doi.org/10.1109/LED.2016.2532883
67.Y. F. Chang*, B. Fowler, Y. C. Chen, F. Zhou, C. H. Pan, K. C. Chang, T. M. Tsai, T. C. Chang, S. M. Sze and J. C. Lee, "A synaptic device built in one diode-one resistor (1D-1R) architecture with intrinsic SiOx-based resistive switching memory", PHYSICAL SCIENCES REVIEWS, 2016, 1(4), 2365-6581. (IF: 无)
66.L. Xu, Q. Chen, L. Liao*, X. Q. Liu, T. C. Chang, K. C. Chang, T. M. Tsai, C. Z. Jiang, J. L. Wang* and J. C. Li, “Rational Hydrogenation for enhanced Mobility and High Reliability on ZnO-Based Thin Film Transistors: From Simulation to Experiment”, ACS Applied Materials & Interfaces, 2016, 8(8), 5408-5415. (IF:10.383)
DOI:10.1021/acsami.5b10220
文章网页链接：https://doi.org/10.1021/acsami.5b10220
65.P. H. Chen, K. C. Chang, T. C. Chang*, T. M. Tsai*, C. H. Pan, T. J. Chu, M. C. Chen, H. C. Huang, I. Lo, J. C. Zheng and S. M. Sze, “Bulk Oxygen-Ion Storage in Indium-Tin-Oxide Electrode for Improved Performance of HfO2-Based Resistive Random Access Memory”, IEEE Electron Device Letters, 2016, 37(3), 280-283. (IF:4.816)
DOI:10.1109/LED.2016.2522085
文章网页链接：https://doi.org/10.1109/LED.2016.2522085
64.K. H. Chen*, K. C. Chang, T. C. Chang, T. M. Tsai, K. H. Liao, Y. E. Syu and S. M. Sze, “Effect of Different Constant Compliance Current for Hopping Conduction Distance Properties of the Sn:SiOx Thin Film RRAM Devices”, Applied Physics A-Materials Science & Processing, 2016, 122(3), 228. (IF:2.983)
DOI:10.1007/s00339-016-9768-5
文章网页链接：https://doi.org/10.1007/s00339-016-9768-5
63.P. H. Chen, K. C. Chang, T. C. Chang*, T. M. Tsai, C. H. Pan, C. Y. Lin, F. Y. Jin, M. C. Chen, H. C. Huang, I. Lo, J. C. Zhang and S. M. Sze, “Effects of Erbium Doping of Indium Tin Oxide Electrode in Resistive Random Access Memory”, Applied Physics Express, 2016, 9(3), 034202. (IF:2.819)
DOI:10.7567/APEX.9.034202
文章网页链接：https://doi.org/10.7567/APEX.9.034202
62.K. H. Chen*, K. C. Chang, T. C. Chang*, T. M. Tsai, S. P. Liang, T. F. Young, Y. E. Syu and S. M. Sze, “Improvement of Bipolar Switching Properties of Gd:SiOx RRAM Devices on Indium Tin Oxide Electrode by Low-Temperature Supercritical CO2 Treatment”. Nanoscale Research Letters, 2016, 11, 52. (IF:5.418)
DOI:10.1186/s11671-016-1272-5
文章网页链接：https://doi.org/10.1186/s11671-016-1272-5
61.C. H. Pan, K. C. Chang, T. C. Chang*, T. M. Tsai, R. Zhang, S. P. Liang, C. Y. Lin, M. C. Chen, P. H. Chen, Y. E. Syu, H. C. Huang and S. M. Sze, “Communication-Effects of Oxygen Concentration Gradient on Resistive Switching Behavior in Oxygen Vacancy-Rich Electrodes”, ECS Journal of Solid State Science and Technology, 2016, 5(5), Q115-Q118. (IF:2.483)
DOI:10.1149/2.0061605jss
文章网页链接：https://doi.org/10.1149/2.0061605jss
2015
60.C. C. Kuo, I. C. Chen, C. C. Shih, K. C. Chang, C. H. Huang, P. H. Chen, T. C. Chang*, T. M. Tsai, J. S. Chang and Huang J.C, “Galvanic Effect of Au-Ag Electrodes for Conductive Bridging Resistive Switching Memory”, IEEE Electron Device Letters, 2015, 36(12), 1321-1324. (IF:4.816)
DOI:10.1109/LED.2015.2496303
文章网页链接：https://doi.org/10.1109/LED.2015.2496303
59.J. Chen, K. C. Chang, T. C. Chang*, T. M. Tsai, C. H. Pan, R. Zhang, J. C. Lou, T. J. Chu, C. H. Wu, M. C. Chen, Y. C. Hung, Y. E. Syu, J. C. Zheng and S. M. Sze, “Nitrogen Buffering Effect on Oxygen in Indium-Tin-Oxide-Capped Resistive Random Access Memory With NH3 Treatment”, IEEE Electron Device Letters, 2015, 36(11), 1138-1141. (IF: 4.816)
DOI:10.1109/LED.2015.2477163
文章网页链接：https://doi.org/10.1109/LED.2015.2477163
58.J. C. Jhu*, T. C. Chang, K. C. Chang, C. Y. Yang, W. C. Chou, C. H. Chou and W. C. Chung, “Investigation of Hydration Reaction-Induced Protons Transport in Etching-Stop a-InGaZnO Thin-Film Transistors”, IEEE Electron Device Letters, 2015, 36(10), 1050-1052. (IF: 4.816)
DOI:10.1109/LED.2015.2466103
文章网页链接：https://doi.org/10.1109/LED.2015.2466103
57.W. Zhang, Y. Hu*, T. C. Chang, K. C. Chang, T. M. Tsai, H. L. Chen, Y. T. Su, T. J. Chu, M. C. Chen, H. C. Huang, W. C. Su, J. C. Zheng, Y. C. Hung and S. M. Sze, “An Electronic Synapse Device Based on Solid Electrolyte Resistive Random Access Memory”, IEEE Electron Device Letters, 2015, 36(8), 772-774. (IF: 4.816)
DOI:10.1109/LED.2015.2448756
文章网页链接：https://doi.org/10.1109/LED.2015.2448756
56.W. Zhang, Y. Hu, T. C. Chang*, T. M. Tsai, K. C. Chang, H. L. Chen, Y. T. Su, R. Zhang, Y. C. Hung, Y. E. Syu, M. C. Chen, J. C. Zheng, H. C. Lin and S. M. Sze, “Mechanism of Triple Ions Effect in GeSO Resistance Random Access Memory”, IEEE Electron Device Letters, 2015, 36(6), 552-554. (IF:4.816)
DOI:10.1109/LED.2015.2424996
文章网页链接：https://doi.org/10.1109/LED.2015.2424996
55.K. C. Chang*, T. M. Tsai, T. C. Chang, R. Zhang, K. H. Chen, J. H. Chen, M. C. Chen, H. C. Huang, W. Zhang, C. Y. Lin, Y. T. Tseng, H. C. Lin, J. C. Zheng and S. M. Sze, “Improvement of Resistive Switching Characteristic in Silicon Oxide-Based RRAM Through Hydride-Oxidation on Indium Tin Oxide Electrode by Supercritical CO2 Fluid”, IEEE Electron Device Letters, 2015, 36(6), 558-560. (IF: 4.816)
DOI:10.1109/LED.2015.2426055
文章网页链接：https://doi.org/10.1109/LED.2015.2426055
54.C. Y. Lin, K. C. Chang, T. C. Chang*, T. M. Tsai, C. H. Pan, R.Zhang, K. H. Liu, H. M. Chen, Y. T. Tseng, Y. C. Hung, Y. E. Syu, J. C. Zheng, Y. L. Wang, W. Zhang and S. M. Sze, “Effects of Varied Negative Stop Voltages on Current Self-Compliance in Indium Tin Oxide Resistance Random Access Memory”, IEEE Electron Device Letters, 2015, 36(6), 564-566. (IF: 4.816)
DOI:10.1109/LED.2015.2424226
文章网页链接：https://doi.org/10.1109/LED.2015.2424226
53.K. H. Chen*, K. C. Chang, T. C. Chang, T. M. Tsai, K. H. Liao, Y. E. Syu and S. M. Sze, “Hopping Conduction Properties of the Sn:SiO(x) Thin-Film Resistance Random Access Memory Devices Induced by Rapid Temperature Annealing Procedure”, Applied Physics A-Materials Science & Processing, 2015, 119(4), 1609-1613. (IF:2.983)
DOI:10.1007/s00339-015-9144-x
文章网页链接：https://doi.org/10.1007/s00339-015-9144-x
52.Y. T. Tseng, T. M. Tsai, T. C. Chang, C. C. Shih, K. C. Chang*, R. Zhang, K. H. Chen, J. H. Chen, Y. C. Li, C. Y. Lin, Y. C. Hung, Y. E. Syu, J. C. Zheng and S. M. Sze, “Complementary resistive switching behavior induced by varying forming current compliance in resistance random access memory”, Applied Physics Letters, 2015, 106(21), 213505. (IF:3.917)
DOI:10.1063/1.4921239
文章网页链接：https://doi.org/10.1063/1.4921239
51.K. C. Chang*, T. C. Chang, T. M. Tsai, R. Zhang, Y. C. Hung, Y. E. Syu, Y. F. Chang, M. C. Chen, T. J. Chu, H. L. Chen, C. H. Pan, C. C. Shih, J. C. Zheng and S. M. Sze, “Physical and chemical mechanisms in oxide-based resistance random access memory”, Nanoscale Research Letters, 2015, 10(1), 1-27. (IF:5.418)
DOI:10.1186/s11671-015-0740-7
文章网页链接：https://doi.org/10.1186/s11671-015-0740-7
50.H. R. Chen, Y. C. Chen*, T. C. Chang, K. C. Chang, T. M. Tsai, T. J. Chu, C. C. Shih, Y. T. Tseng, C. Y. Lin and H. C. Lin, “The Manipulation of Temperature Coefficient Resistance of TaN Thin-Film Resistor by Supercritical CO2 Fluid”, IEEE Electron Device Letters, 2015, 36(3), 271-273. (IF:4.816)
DOI:10.1109/LED.2015.2396196
文章网页链接：https://doi.org/10.1109/LED.2015.2396196
2014
49.T. J. Chu, T. M. Tsai*, T. C. Chang, K. C. Chang, C. H. Pan, K. H. Chen, J. H. Chen, H. L. Chen, H. C. Huang, C. C. Shih, Y. E. Syu, J. C. Zheng and S. M. Sze, “Ultra-high Resistive Switching Mechanism Induced by Oxygen Ion Accumulation on Nitrogen-Doped Resistive Random Access Memory”, Applied Physics Letters, 2014, 105(22), 223514. (IF:3.917)
DOI:10.1063/1.4902503
文章网页链接：https://doi.org/10.1063/1.4902503
48.X. Huang, K. C. Chang, T. C. Chang*, T. M. Tsai, C. C. Shih, R. Zhang, S. Y. Huang, K. H. Chen, J. H. Chen, H. J. Wang, W. J. Chen, F. Y. Zhang, C. Chen and S. M. Sze, “Controllable Set Voltage in bilayer ZnO:SiO2/ZnOx Resistance Random Access Memory by Oxygen Concentration Gradient Manipulation”, IEEE Electron Device Letters, 2014, 35(12), 1227-1229. (IF: 4.816)
DOI:10.1109/LED.2014.2360525
文章网页链接：https://doi.org/10.1109/LED.2014.2360525
47.Y. J. Chen, K. C. Chang, T. C. Chang*, H. L. Chen, T. F. Young, T. M. Tsai, R. Zhang, T. J. Chu, J. F. Ciou, J. C. Lou, K. H. Chen, J. H. Chen, J. C. Zheng and S. M. Sze, “Resistance Switching Induced by Hydrogen and Oxygen in Diamond-Like Carbon Memristor”, IEEE Electron Device Letters, 2014, 35(10), 1016-1018. (IF: 4.816)
DOI:10.1109/LED.2014.2343331
文章网页链接：https://doi.org/10.1109/LED.2014.2343331
46.H. L. Chen, T. C. Chang*, T. F. Young, T. M. Tsai, K. C. Chang, R. Zhang, S. Y. Huang, K. H. Chen, J. C. Lou, M. C. Chen, C. C. Shih, S. Y. Huang and J. H. Chen, “Ultra-Violet Light Enhanced Super Critical Fluid Treatment in In-Ga-Zn-O Thin Film Transistor”, Applied Physics Letters, 2014, 104(24), 243508. (IF: 3.917)
DOI:10.1063/1.4883899
文章网页链接：https://doi.org/10.1063/1.4883899
45.G. W. Chang*, T. C. Chang, J. C. Jhu, T. M. Tsai, K. C. Chang, Y. E. Syu, Y. H. Tai, F. Y. Jian and Y. C. Hung, “Temperature-Dependent Instability of Bias Stress in InGaZnO Thin-Film Transistors”, IEEE Transactions on Electron Devices, 2014, 61(6), 2119-2124. (IF:3.221)
DOI:10.1109/TED.2014.2319105
文章网页链接：https://doi.org/10.1109/TED.2014.2319105
44.R. Zhang, K. C. Chang, T. C. Chang*, T. M. Tsai, S. Y. Huang, W. J. Chen, K. H. Chen, J. C. Lou, J. H. Chen, T. F. Young, M. C. Chen, H. L. Chen, S. P. Liang, Y. E. Syu and S. M. Sze, “Characterization of Oxygen Accumulation in Indium-Tin-Oxide for Resistance Random Access Memory”, IEEE Electron Device Letters, 2014, 35(6), 630-632. (IF:4.816)
DOI:10.1109/LED.2014.2316806
文章网页链接：https://doi.org/10.1109/LED.2014.2316806
43.C. C. Shih, K. C. Chang, T. C. Chang*, T. M. Tsai, R. Zhang, J. H. Chen, K. H. Chen, T. F. Young, H. L. Chen, J. C. Lou, T. J. Chu, S. Y. Huang, D. H. Bao and S. M. Sze, “Resistive Switching Modification by Ultraviolet Illumination in Transparent Electrode Resistive Random Access Memory”, IEEE Electron Device Letters, 2014, 35(6), 633-635. (IF: 4.816)
DOI:10.1109/LED.2014.2316673
文章网页链接：https://doi.org/10.1109/LED.2014.2316673
42.K. C. Chang*, T. M. Tsai, T. C. Chang, K. H. Chen, R. Zhang, Z. Y. Wang, J. H. Chen, T. F. Young, M. C. Chen, T. J. Chu, S. Y. Huang, Y. E. Syu, D. H. Bao and S. M. Sze, “Dual Ion Effect of The Lithium Silicate Resistance Random Access Memory”, IEEE Electron Device Letters, 2014, 35(5), 530-532. (IF: 4.816)
DOI:10.1109/LED.2014.2311295
文章网页链接：https://doi.org/10.1109/LED.2014.2311295
41.H. R. Chen, Y. C. Chen*, T. C. Chang, K. C. Chang, T. M. Tsai, T. J. Chu, C. C. Shih, N. C. Chuang and K. Y. Wang, “Surface Scattering Mechanisms of Tantalum Nitride Thin Film Resistor”, Nanoscale Research Letters, 2014, 9(1), 1-5. (IF:5.418)
DOI:10.1186/1556-276X-9-177
文章网页链接：https://doi.org/10.1186/1556-276X-9-177
40.K. H. Liu, T. C. Chang*, K. C. Chang, T. M. Tsai, T. Y. Hsieh, M. C. Chen, B. L. Yeh and W. C. Chou, “Investigation of On-Current Degradation Behavior Induced by Surface Hydrolysis Effect Under Negative Gate Bias Stress in Amorphous InGaZnO Thin-Film Transistors”, Applied Physics Letters, 2014, 104(10), 103501. (IF:3.917)
DOI:10.1063/1.4863682
文章网页链接：https://doi.org/10.1063/1.4863682
39.C. Ye, C. Zhang, T. M. Tsai, K. C. Chang, M. C. Chen, T. C. Chang, T. F. Deng and H. Wang*, “Low-Power Bipolar Resistive Switching TiN/HfO2/ITO Memory with Self-Compliance Current Phenomenon”, Applied Physics Express, 2014, 7(3), 034101. (IF:2.819)
DOI:10.7567/APEX.7.034101
文章网页链接：https://doi.org/10.7567/APEX.7.034101
38.L. Ji, Y. F. Chang*, B. Fowler, Y. C. Chen, T. M. Tsai, K. C. Chang, M. C. Chen, T. C. Chang, S. M. Sze, E. T. Yu and J. C. Lee, “Integrated One Diode-One Resistor Architecture in Nanopillar SiOx Resistive Switching Memory by Nanosphere Lithography”, Nano Letters, 2014, 14(2), 813-818. (IF:12.262)
DOI:10.1021/nl404160u
文章网页链接：https://doi.org/10.1021/nl404160u
37.T. J. Chu*, T. M. Tsai, T. C. Chang, K. C. Chang, R. Zhang, K.H. Chen, J. H. Chen, T. F. Young, J. W. Huang, J. C. Lou, M. C. Chen, S. Y. Huang, H. L. Chen, Y. E. Syu, D. H. Bao and S. M. Sze, “Tri-Resistive Switching Behavior of Hydrogen Induced Resistance Random Access Memory”, IEEE Electron Device Letters, 2014, 35(2), 217-219. (IF:4.816)
DOI:10.1109/LED.2013.2295378
文章网页链接：https://doi.org/10.1109/LED.2013.2295378
36.Y. J. Chen, H. L. Chen, T. F. Young*, T. C. Chang, T. M. Tsai, K. C. Chang, R. Zhang, K. H. Chen, J. C. Lou, T. J. Chu, J. H. Chen, D. H. Bao and S. M. Sze, “Hydrogen Induced Redox Mechanism in Amorphous Carbon Resistive Random Access Memory”, Nanoscale Research Letters, 2014, 9(1), 1-5. (IF:5.418)
DOI:10.1186/1556-276X-9-52
文章网页链接：https://doi.org/10.1186/1556-276X-9-52
2013
35.R. Zhang, T. M. Tsai*, T. C. Chang, K. C. Chang, K. H. Chen, J. C. Lou, T. F. Young, J. H. Chen, S. Y. Huang, M. C. Chen, C. C. Shih, H. L. Chen, J. H. Pan, C. W. Tung, Y. E. Syu and S. M. Sze, “Mechanism of Power Consumption Inhibitive Multi-layer Zn:SiO2/SiO2 Structure Resistance Random Access Memory”, Journal of Applied Physics, 2013, 114(23), 234501. (IF:2.877)
DOI:10.1063/1.4843695
文章网页链接：https://doi.org/10.1063/1.4843695
34.K. C. Chang, J. W. Huang*, T. C. Chang, T. M. Tsai, K. H. Chen, T. F. Young, J. H. Chen, R. Zhang, J. C. Lou, S. Y. Huang, Y. C. Pan, H. C. Huang, Y. E. Syu, D. S. Gan, D. H. Bao and S. M. Sze, “Space Electric Field Concentrated Effect for Zr:SiO2 RRAM Devices Using Porous SiO2 Buffer Layer”, Nanoscale Research Letters, 2013, 8(1), 1-5. (IF: 5.418)
DOI:10.1186/1556-276X-8-523
文章网页链接：https://doi.org/10.1186/1556-276X-8-523
33.R. Zhang, K. C. Chang, T. C. Chang*, T. M. Tsai, K. H. Chen, J. C. Lou, J. H. Chen, T. F. Young, C. C. Shih, Y. L. Yang, Y. C. Pan, T. J. Chu, S. Y. Huang, C. H. Pan, Y. T. Su, Y. E. Syu and S. M. Sze, “High Performance of Graphene Oxide-Doped Silicon Oxide-based Resistance Random Access Memory”, Nanoscale Research Letters, 2013, 8(1), 1-6. (IF: 5.418)
DOI:10.1186/1556-276X-8-523
文章网页链接：https://doi.org/10.1186/1556-276X-8-523
32.Y. T. Su*, K. C. Chang, T. C. Chang, T. M. Tsai, R. Zhang, J. C. Lou, J. H. Chen, T. F. Young, K. H. Chen, B. H. Tseng, C. C. Shih, Y. L. Yang, M. C. Chen, T. J. Chu, C. H. Pan, Y. E. Syu and S. M. Sze, “Characteristics of Hafnium Oxide Resistance Random Access Memory with Different Setting Compliance Current”, Applied Physics Letters, 2013, 103(16), 163502. (IF:3.917)
DOI:10.1063/1.4825104
文章网页链接：https://doi.org/10.1063/1.4825104
31.G. W. Chang, T. C. Chang*, J. C. Jhu, T. M. Tsai, Y. E. Syu, K. C. Chang, F. Y. Jian, Y. C. Hung and Y. H. Tai, “N2O Plasma Treatment Suppressed Temperature-dependent Sub-threshold Leakage Current of Amorphous Indium-gallium-zinc-oxide Thin Film Transistors”, Surface & Coatings Technology, 2013, 231, 281-284. (IF:3.754)
DOI:10.1016/j.surfcoat.2012.04.086
文章网页链接：https://doi.org/10.1016/j.surfcoat.2012.04.086
30.K. C. Chang, T. M. Tsai*, R. Zhang, T. C. Chang, K. H. Chen, J. H. Chen, T. F. Young, J. C. Lou, T. J. Chu, C. C. Shih, J. H. Pan, Y. T. Su, Y. E. Syu, C. W. Tung, M. C. Chen, J. J. Wu, Y. Hu and S. M. Sze, “Electrical Conduction Mechanism of Zn:SiOx Resistance Random Access Memory with Supercritical CO2 Fluid Process”, Applied Physics Letters, 2013, 103(8), 083509. (IF:3.917)
DOI:10.1063/1.4819162
文章网页链接：https://doi.org/10.1063/1.4819162
29.Y. L. Yang*, T. F. Young, T. C. Chang, J. H. Hsu, T. M. Tsai, F. Y. Jian and K. C. Chang, “Mechanical Stress Influence on Electronic Transport in Low-kappa SiOC Dielectric Dual Damascene Capacitor”, IEEE Electron Device Letters, 2013, 34(8), 1056-1058. (IF:4.816)
DOI:10.1109/LED.2013.2269831
文章网页链接：https://doi.org/10.1109/LED.2013.2269831
28.Y. E. Syu*, R. Zhang, T. C. Chang, T. M. Tsai, K. C. Chang, J. C. Lou, T. F. Young, J. H. Chen, M. C. Chen, Y. L. Yang, C. C. Shih, T. J. Chu, J. Y. Chen, C. H. Pan, Y. T. Su, H. C. Huang, D. S. Gan and S. M. Sze, “Endurance Improvement Technology With Nitrogen Implanted in the Interface of WSiOx Resistance Switching Device”, IEEE Electron Device Letters, 2013, 34(7), 864-866. (IF: 4.816)
DOI:10.1109/LED.2013.2260125
文章网页链接：https://doi.org/10.1109/LED.2013.2260125
27.T. M. Tsai*, K. C. Chang, R. Zhang, T. C. Chang, J. C. Lou, J. H. Chen, T. F. Young, B. H. Tseng, C. C. Shih, Y. C. Pan, M. C. Chen, J. H. Pan, Y. E. Syu and S. M. Sze, “Performance and Characteristics of Double Layer Porous Silicon Oxide Resistance Random Access Memory”, Applied Physics Letters, 2013, 102(25), 253509. (IF: 3.917)
DOI:10.1063/1.4812474
文章网页链接：https://doi.org/10.1063/1.4812474
26.J. W. Huang*, R. Zhang, T. C. Chang, T. M. Tsai, K. C. Chang, J. C. Lou, T. F. Young, J. H. Chen, H. L. Chen, Y. C. Pan, X. Huang, F. Y. Zhang, Y. E. Syu and S. M. Sze, “The Effect of High/Low Permittivity in Bilayer HfO2/BN Resistance Random Access Memory”, Applied Physics Letters, 2013, 102(20), 203507. (IF: 3.917)
DOI:10.1063/1.4807577
文章网页链接：https://doi.org/10.1063/1.4807577
25.Y. L. Yang*, T. F. Young, T. C. Chang, F. Y. Shen, J. H. Hsu, T. M. Tsai, K. C. Chang and H. L. Chen, “Mechanical Stress Influence on Electronic Transport in Low-k SiOC Dielectric Single Damascene Capacitor”, Applied Physics Letters, 2013, 102(19), 192912. (IF: 3.971)
DOI:10.1063/1.4807010
文章网页链接：https://doi.org/10.1063/1.4807010
24.K. C. Chang*, C. H. Pan, T. C. Chang, T. M. Tsai, R. Zhang, J. C. Lou, T. F. Young, J. H. Chen, C. C. Shih and T. J. Chu, “Hopping Effect of Hydrogen-Doped Silicon Oxide Insert RRAM by Supercritical CO2 Fluid Treatment”, IEEE Electron Device Letters, 2013, 34(5), 617-619. (IF:4.816)
DOI:10.1109/LED.2013.2251995
文章网页链接：https://doi.org/10.1109/LED.2013.2251995
23.K. C. Chang*, R. Zhang, T. C. Chang, T. M. Tsai, J. C. Lou, J. H. Chen, T. F. Young, M. C. Chen, Y. L. Yang and Y. C. Pan, “Origin of Hopping Conduction in Graphene-Oxide-Doped Silicon Oxide Resistance Random Access Memory Devices”, IEEE Electron Device Letters, 2013, 34(5), 677-679. (IF:4.816)
DOI:10.1109/LED.2013.2250899
文章网页链接：https://doi.org/10.1109/LED.2013.2250899
22.Y. E. Syu*, T. C. Chang, J. H. Lou, T. M. Tsai, K. C. Chang, M. J. Tsai, Y. L. Wang, M. Liu and S. M. Sze, “Atomic-level quantized reaction of HfOx memristor”, Applied Physics Letters, 2013, 102(17). (IF: 3.971)
DOI:10.1063/1.4802821
文章网页链接：https://doi.org/10.1063/1.4802821
21.K. H. Chen*, R. Zhang, T. C. Chang, T. M. Tsai, K. C. Chang, J. C. Lou, T. F. Young, J. H. Chen, C. C. Shih and C. W. Tung, “Hopping Conduction Distance Dependent Activation Energy Characteristics of Zn:SiO2 Resistance Random Access Memory Devices”, Applied Physics Letters, 2013, 102(13), 133503. (IF: 3.971)
DOI:10.1063/1.4799655
文章网页链接：https://doi.org/10.1063/1.4799655
20.T. J. Chu*, T. C. Chang, T. M. Tsai, H. H. Wu, J. H. Chen, K. C. Chang, T. F. Young, K. H. Chen, Y. E. Syu and G. W. Chang, “Charge Quantity Influence on Resistance Switching Characteristic During Forming Process”, IEEE Electron Device Letters, 2013, 34 (4), 502-504. (IF: 4.816)
DOI:10.1109/LED.2013.2242843
文章网页链接：https://doi.org/10.1109/LED.2013.2242843
19.K. C. Chang*, T. M. Tsai, T. C. Chang, H. H. Wu, K. H. Chen, J. H. Chen, T. F. Young, T. J. Chu, J. Y. Chen and C. H. Pan, “Low Temperature Improvement Method on Zn:SiOx Resistive Random Access Memory Devices”, IEEE Electron Device Letters, 2013, 34 (4), 511-513. (IF: 4.816)
DOI:10.1109/LED.2013.2248075
文章网页链接：https://doi.org/10.1109/LED.2013.2248075
18.K. C. Chang*, T. M. Tsai, T. C. Chang, H. H. Wu, J. H. Chen, Y. E. Syu, G.W. Chang, T. J. Chu, G. R. Liu and Y. T. Su, “Characteristics and Mechanisms of Silicon-Oxide-Based Resistance Random Access Memory”, IEEE Electron Device Letters, 2013, 34 (3), 399-401. (IF:4.816)
DOI:10.1109/LED.2013.2241725
文章网页链接：https://doi.org/10.1109/LED.2013.2241725
17.M. C. Chen, T. C. Chang*, Y. C. Chiu, S. C. Chen, S. Y. Huang, K. C. Chang, T. M. Tsai, K. H. Yang, S. M. Sze and M. J. Tsai, “The Resistive Switching Characteristics in TaON Films for Nonvolatile Memory Applications”, Thin Solid Films, 2013, 528, 224–228. (IF:2.358)
DOI:10.1016/j.tsf.2012.09.081
文章网页链接：https://doi.org/10.1016/j.tsf.2012.09.081
2012
16.T. M. Tsai*, K. C. Chang, T. C. Chang, G. W. Chang, Y. E. Syu, Y. T. Su, G. R. Liu, K. H. Liao, M. C. Chen, H. C. Huang, Y. H. Tai, D. S. Gan, C. Ye, H. Wang and S. M. Sze, “Origin of Hopping Conduction in Sn-Doped Silicon Oxide RRAM With Supercritical CO2 Fluid Treatment”, IEEE Electron Device Letters, 2012, 33(12), 1693-1695. (IF:4.816)
DOI:10.1109/LED.2012.2217932
文章网页链接：https://doi.org/10.1109/LED.2012.2217932
15.T. M. Tsai*, K. C. Chang, T. C. Chang, Y. E. Syu, S. L. Chuang, G. W. Chang, G. R. Liu, M. C. Chen, H. C. Huang, S. K. Liu, Y. H. Tai, D. S. Gan, Y. L. Yang, T. F. Young, B. H. Tseng, K. H. Chen, M. J. Tsai, C. Ye, H. Wang and S. M. Sze, “Bipolar Resistive RAM Characteristics Induced by Nickel Incorporated into Silicon Oxide Dielectrics for IC Applications”, IEEE Electron Device Letters, 2012, 33(12), 1696-1698. (IF:4.816)
DOI:10.1109/LED.2012.2217933
文章网页链接：https://doi.org/10.1109/LED.2012.2217933
14.T. M. Tsai*, K. C. Chang, T. C. Chang, Y. E. Syu, K. H. Liao, B. H. Tseng and S. M. Sze, “Dehydroxyl Effect of Sn-doped Silicon Oxide Resistance Random Access Memory with Supercritical CO2 Fluid Treatment”, Applied Physics Letters, 2012, 101(11), 112906. (IF:3.971)
DOI:10.1063/1.4750235
文章网页链接：https://doi.org/10.1063/1.4750235
13.G. W. Chang*, T. C. Chang, J. C. Jhu, T. M. Tsai, Y. E. Syu, K. C. Chang, Y. H. Tai, F. Y. Jian and Y. C. Hung, “Suppress Temperature Instability of InGaZnO Thin Film Transistors by N2O Plasma Treatment, including Thermal-induced Hole Trapping Phenomenon under Gate Bias Stress”, Applied Physics Letters, 2012, 100(18), 182103. (IF:3.971)
DOI:10.1063/1.4709417
文章网页链接：https://doi.org/10.1063/1.4709417
12.G. W. Chang*, T. C. Chang, J. C. Jhu, T. M. Tsai, Y. E. Syu, K. C. Chang, Y. H. Tai, F. Y. Jian and Y. C. Hung, “Abnormal Subthreshold Leakage Current at High Temperature in InGaZnO Thin-Film Transistors”, IEEE Electron Device Letters, 2012, 33(4), 540-542. (IF:4.816)
DOI:10.1109/LED.2012.2182754
文章网页链接：https://doi.org/10.1109/LED.2012.2182754
11.Y. E. Syu*, T. C. Chang, T. M. Tsai, G. W. Chang, K. C. Chang, J. H. Lou, Y. H. Tai, M. J. Tsai, Y. L. Wang and S. M. Sze, “Asymmetric Carrier Conduction Mechanism by Tip Electric Field in WSiOX Resistance Switching Device”, IEEE Electron Device Letters, 2012, 33(3), 342-344. (IF:4.816)
DOI:10.1109/LED.2011.2182600
文章网页链接：https://doi.org/10.1109/LED.2011.2182600
10.Y. E. Syu*, T. C. Chang, T. M. Tsai, G. W. Chang, K. C. Chang, Y. H. Tai, M. J. Tsai, Y. L. Wang and S. M. Sze, “Silicon introduced effect on resistive switching characteristics of WOX thin films”, Applied Physics Letters, 2012, 100(2), 022904. (IF:3.971)
DOI:10.1063/1.3676194
文章网页链接：https://doi.org/10.1063/1.3676194
9.K. C. Chang*, T. M. Tsai, T. C. Chang, Y. E. Syu, K. H. Liao, S. L. Chuang, C. H. Li, D. S. Gan and S. M. Sze, “The Effect of Silicon Oxide Based RRAM with Tin Doping (vol 15, pg H65, 2012)”, ESC Solid State Letters, 2012, 1(2), X1-X1. (IF:1.184)
DOI:10.1149/2.022202ssl
文章网页链接：https://doi.org/10.1149/2.022202ssl
8.K. C. Chang*, T. M. Tsai, T. C. Chang, Y. E. Syu, S. L. Chuang, C. H. Li, D. S. Gan and S. M. Sze, “The Effect of Silicon Oxide Based RRAM with Tin Doping”, Electrochemical and Solid State Letters, 2012, 15(3), H65-H68. (IF:2.321)
DOI:10.1149/2.022202ssl
文章网页链接：https://doi.org/10.1149/2.022202ssl
2011
7.G. W. Chang, T. C. Chang*, Y. E. Syu, T. M. Tsai, K. C. Chang, C. H. Tu, F. Y. Jian, Y. C. Hung and Y. H. Tai, “Paraffin Wax Passivation Layer Improvements in Electrical Characteristics of Bottom Gate Amorphous Indium-gallium-zinc oxide Thin-film Transistors”, Thin Solid Films, 2011, 520(5), 1608-1611. (IF:2.358)
DOI:10.1016/j.tsf.2011.08.104
文章网页链接：https://doi.org/10.1016/j.tsf.2011.08.104
6.K. C. Chang*, T. M. Tsai, T. C. Chang, Y. E. Syu, C. C. Wang, S. L. Chuang, C. H. Li, D. S. Gan and S. M. Sze, “Reducing Operation Current of Ni-doped Silicon Oxide Resistance Random Access Memory by Supercritical CO2 Fluid Treatment”, Applied Physics Letters, 2011, 99(26), 263501. (IF:3.971)
DOI:10.1063/1.3671991
文章网页链接：https://doi.org/10.1063/1.3671991
5.Y. E. Syu*, T. C. Chang, T. M. Tsai, Y. C. Hung, K. C. Chang, M. J. Tsai, M. J. Kao and S. M. Sze, “Redox Reaction Switching Mechanism in RRAM Device With Pt/CoSiOX/TiN Structure”, IEEE Electron Device Letters, 2011, 32(4), 545-547. (IF:4.816)
DOI:10.1109/LED.2011.2104936
文章网页链接：https://doi.org/10.1109/LED.2011.2104936
4.Y. E. Syu*, T. C. Chang, C. T. Tsai, G. W. Chang, T. M. Tsai, K. C. Chang, Y. H. Tai, M. J. Tsai and S. M. Sze, “Improving Resistance Switching Characteristics with SiGeOx/SiGeON Double Layer for Nonvolatile Memory Applications”, Electrochemical and Solid State Letters, 2011, 14(10), H419-H421. (IF:2.321)
DOI:10.1149/1.3615823
文章网页链接：https://doi.org/10.1149/1.3615823
3.K. C. Chang*, T. M. Tsai, T. C. Chang, Y. E. Syu, H. C. Huang, Y. C. Hung, T. F. Young, D. S. Gan and N. J. Ho, “Low-Temperature Synthesis of ZnO Nanotubes by Supercritical CO2 Fluid Treatment”, Electrochemical and Solid State Letters, 2011, 14(9), K47-K50. (IF:2.321)
DOI:10.1149/1.3599420
文章网页链接：https://doi.org/10.1149/1.3599420
2009
2.M. C. Chen, T. C. Chang*, S. Y. Huang, K. C. Chang, H. C. Huang, S. C. Chen, J. Lu, D. S. Gan, N. J. Ho, T. F. Young, G. W. Jhang and Y. H. Tai, “Improvement of the performance of ZnO TFTs by low-temperature supercritical fluid technology treatment”, Surface & Coatings Technology, 2009, 204(6-7), 1112-1115. (IF:4.865)
DOI:10.1016/j.surfcoat.2009.09.050
文章网页链接：https://doi.org/10.1016/j.surfcoat.2009.09.050
1.M. C. Chen*, T. C. Chang, S. Y. Huang, K. C. Chang, H. W. Li, S. C. Chen, J. Lu and Y. Shi, “A low-temperature Method for Improving the Performance of Sputter-deposited ZnO Thin-film Transistors with Supercritical Fluid”, Applied Physics Letters, 2009, 94(16), 162111. (IF:3.971)
DOI:10.1063/1.3124658
文章网页链接：https://doi.org/10.1063/1.3124658
Conference
2021
17.H. C. Chin, L. Hu, K. C. Chang* and X. Lin*, “Supercritical Fluid of Amorphous-silicon Flexible Thin-film Transistors”, 2021 9th International Symposium on Next Generation Electronics (ISNE) (pp. 1-3)
16.Y. Zheng, K. C. Chang* and L. Li, “An Effective Method for Improving the Insulating Property of Polyvinyl Alcohol in Device with Supercritical Fluids”, 2021 9th International Symposium on Next Generation Electronics (ISNE) (pp. 1-4).
15.Y. Hu, K. C. Chang*, L. Li and Z. Wang, “Interfacial Modification of Thin Film Transistor via Supercritical Fluids Treatment and Mechanism Exploration”, 2021 9th International Symposium on Next Generation Electronics (ISNE) (pp. 1-4).
2020
14.B. L. Liu, H. C. Chin, H. Lou, K. C. Chang* and X. Lin*, “Charge Plasma-Based Junctionless FinFET for The Immune of Fin Sidewall Angle Variation”, 2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT) (pp. 1-3).
13.J. Wu, H. Fu, Y. Zheng, K. C. Chang, S. Zhang, H. Y. Fu & Q. Li*, “Precise tuning of epsilon-near-zero properties in indium tin oxide nanolayer by supercritical carbon dioxide”, Conference on Lasers and Electro-Optics/Pacific Rim (CLEO-PR). 2020
12.K. Liu, H. C. Chin, H. Lou, K. C. Chang and X. Lin*, “Variation Investigation of Junction-less Transistor with Side-wall Charge-plasma Structure Induced by Line Edge Roughness”, 2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT) (pp. 1-3).
11.X. Zhang, R. Niu, Z. Huang, T. Dai, K. C. Chang* and X. Lin*, “A Study on the Threshold Voltage Shift under Gate-pulse Stress in D-mode GaN MIS-HEMTs”, 2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT) (pp. 1-3).
10.Z. Wang, Y. Hu, Q. Lin, L. Li and K. C. Chang*, “Performance Improvement of a‐IGZO Thin‐Film Transistor By Using Ta2O5/SiO2 Double‐layer Gate Dielectric” In SID Symposium Digest of Technical Papers (Vol. 52, pp. 440-442). 2020
2019
9.M. H. Liu, K. C. Chang, X. N. Lin*, L. Li and Y. F. Jin*, “Positive Shift Suppression in Threshold Voltage of AlGaN/GaN MIS-HEMTs”, 2019 8th International Symposium on Next Generation Electronics, 2019.
DOI:10.1109/ISNE.2019.8896561
文章网页链接：https://doi.org/10.1109/ISNE.2019.8896561
2017
8.M. Yuan, W. Luo, X. T. Xu, K. C. Chang, T. C. Chang, C. Liu and H. Zhou*, “Organometal Tri-halide Perovskite Resistive Switching Device with PMMA Electrode Interlayer”, IEEE International Conference on Electron and Solid-State Circuits, 2017.
DOI:10.1109/EDSSC.2017.8126466
文章网页链接：https://doi.org/10.1109/EDSSC.2017.8126466
7.C. Y. Lin, Y. C. Chen, M. Q. Gu, C. H. Pan, F. Y. Jin, Y. T. Tseng, C. C. Hsieh, X. H. Wu, M. C. Chen, Y. F. Chang*, F. Zhou, B. Fowler, K. C. Chang, T. M. Tsai, T. C. Chang, Y. G. Zhao, S. M. Sze, S. Banetjee and J. C Lee, “A Universal Model for Interface-Type Threshold Switching Phenomena by Comprehensive Study of Vanadium Oxide-Based Selector”, 2017 International Symposium on VLASI Technology, Systems and Application (VLSI-TSA), 2017.
DOI:10.1109/VLSI-TSA.2017.7942474
文章网页链接：https://doi.org/10.1109/VLSI-TSA.2017.7942474
2016
6.Y. C. Chen, Y. F. Chang*, B. Fowler, F. Zhou, X. H. Wu, C. C. Hsieh, H. L. Chang, C. H. Pan, M. C. Chen, K. C. Chang, T. M. Tsai, T. C. Chang and J. C. Lee, “Comprehensive Study of Intrinsic Unipolar SiOx-Based ReRAM Characteristics in AC Frequency Response and Low Voltage (< 2V) Operation”, 2016 International Symposium on VLSI Technology, Systems and Application(VLSI-TSA).
2015
5.J. Chen, J. C. Lou, K. C. Chang, T. C. Chang, T. M. Tsai, C. H. Pan, “Influence of Nitrogen Buffering on Oxygen in Indium-Tin-Oxide Capped Resistive Random Access Memory with NH3 Treatment”, 2015 IEEE 11th International Conference on ASIC (ASICON).
DOI:10.1109/ASICON.2015.7516973
文章网页链接：https://doi.org/10.1109/ASICON.2015.7516973
2014
4.K. C. Chang, R. Zhang, T. C. Chang, T. M. Tsai, T. J. Chu, H. L. Chen, C. C. Shih, C. H. Pan, Y. T. Su, P. J. Wu and Sze S.M, “High Performance, Excellent Reliability Multifunctional Graphene Oxide Doped Memristor Achieved by Self-Protective Compliance Current Structure”, 2014 IEEE International Electron Devices Meeting (IEDM).
3.J. Li*, Y. F. Chang, B. Fowler, Y. C. Chen, T. M. Tsai, K. C. Chang, M. C. Chen, T. C. Chang, S. M. Sze, E. T. Yu and J. C. Lee, “Resistive Switching of SiOx with One Diode-One Resistor Nanopillar Architecture Fabricated Via Nanosphere Lithography”, 2014 72nd Annual Device Research Conference (DRC).
2013
2.M. C. Chen*, T. C. Chang, Y. C. Chiu, S. C. Chen, S. Y. Huang, Y. E. Syu, K. C. Chang, H. C. Huang, T. M. Tsai, D. S. Gan and IEEE, “Effect of Electrode Material on Resistive Switching Characteristics in TaON Nonvolatile Memory Devices”, Symposium on General Student Poster Session held during the 223rd Meeting of the Electrochemical-Society (ECS), 2013
DOI:10.1149/05329.0001ecst
文章网页链接：https://doi.org/10.1149/05329.0001ecst
2012
1.J. C. Jhu*, T. C. Chang, G. W. Chang, T. M. Tsai, Y. E. Syu, F. Y. Jian, K. C. Chang and Y. H. Tai, “N2O Plasma Treatment Suppressed Temperature-dependent Point Defects Formation with Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors”, Symposium on Thermal and Plasma CVD of Nanostructures and Their Applications held during the 221st Meeting of the Electrochemical-Society (ECS), 2012
DOI:10.1149/04531.0047ecst
