薄膜晶体管与先进显示重点实验室
Thin Film Transistor and Advanced Display Lab

2018年会议论文

(1) Xiaoliang Zhou, Xiaodong Zhang, Yang Shao, Letao Zhang, Dedong Han, Yi Wang, “Asymmetric Effect of Gate-Bias Stress Voltage on the Stability of a-IGZO”, 2018 International Conference on Display Technology Proceedings, p.703 , April 9–12, 2018, Guangzhou.
(2) Letao Zhang, Xiaoliang Zhou, Yang Shao, Shengdong Zhang, “Back-Channel-Etched a-IGZO TFTs with TiO2:Nb Protective Layer”, 2018 International Conference on Display Technology Proceedings, p322-328 , April 9–12, 2018, Guangzhou.
(3) Yukun Yang , Huiling Lu ,Shengdong Zhang, “Influence of Mg Content and Argon/Oxygen Ratio on Photoelectric properties of co-sputtering MIZO”, 2018 International Conference on Display Technology Proceedings,P681 , April 9–12, 2018, Guangzhou.
(4) Huan Yang, Xiaoliang Zhou,Shengdong Zhang, “Anomalous dependence of threshold voltage on channel width and drain voltage in back-channel-etched a-IGZO TFTs”, 2018 International Conference on Display Technology Proceedings,P631 , April 9–12, 2018, Guangzhou.
(5) Gang Wang , Baozhu Chang, Shenglei Wang, and Shengdong Zhang, “The Conductivity Modulation of Amorphous Zinc Tin Oxide Thin Film by Ar Plasma Treatment”, 2018 International Conference on Display Technology Proceedings,P635 , April 9–12, 2018, Guangzhou.
(6) Xuan Deng, Xiaodong Zhang, Ting Liang, Xiaoliang Zhou,Shengdong Zhang, “The influence of dual-channel on the performance of Self-Align Top-Gate IGZO thin film transistors”, 2018 International Conference on Display Technology Proceedings,P682 , April 9–12, 2018, Guangzhou.
(7) Xinxin Huo, Congwei Liao, Jixiang Wu, Shuiping Yi, Ying Wang, Hailong Jiao, Min Zhang, and Shengdong Zhang, “An OLEDoS Pixel Circuit with Extended Data Voltage Range for High Resolution Micro-Displays”, SID Symposium Digest of Technical Papers, pp.1373-1376, May 20-25, 2018, Los Angeles, California, USA.
(8) Ying Wang, Congwei Liao, Yihua Ma, Jixiang Wu, Shuiping Yi, Xinxin Huo, Min Zhang and Shengdong Zhang, “Integrated a‐IGZO TFT Gate Driver with Programmable Output for AMOLED Display”, SID Symposium Digest of Technical Papers, pp.1377-1380, May 20-25, 2018, Los Angeles, California, USA.
(9) Hezi Qiu, Wengao Lu, Shengdong Zhang, Hailong Jiao, “A Low-Power Time-Interleaving Analog Adder for Externally Compensated AMOLED/Micro-LED Displays”, SID Symposium Digest of Technical Papers, pp.1399-1402, May 20-25, 2018, Los Angeles, California, USA.
(10) Shuiping Yi, Jixiang Wu, Congwei Liao, Ying Wang, Xinxin Huo and Shengdong Zhang, “An a-IGZO TFT AMOLED Pixel Circuit to Compensate Threshold Voltage and Mobility Variations”, AMFPD International Workshop on Active-Matrix Flatpanel Displays and Devices, July 3-6, 2018, Kyoto, Japan.
(11) Jixiang Wu,Shuiping Yi, Congwei Liao,Xinxin Huo, Ying Wang and Shengdong Zhang,“New AMOLED Pixel Circuit to Compensate Characteristics Variations of LTPS TFTs and Voltage Drop”, AMFPD International Workshop on Active-Matrix Flatpanel Displays and Devices, July 3-6, 2018, Kyoto, Japan.
(12) Yukun Yang, Huiling Lu and Shengdong Zhang, “Effects of Wavelength and Geometrical Condition on Photosensitivity of Self-Aligned Top-Gate Amorphous InZnO Thin Film Transistors”, AMFPD International Workshop on Active-Matrix Flatpanel Displays and Devices, July 3-6, 2018, Kyoto, Japan.
(13) Shuiping Yi, Xinxin Huo, Congwei Liao, Ying Wang, Jixiang Wu, Hailong Jiao, Min Zhang and Shengdong Zhang, “An a-IGZO TFT Pixel Circuit for AMOLED Display Systems With Compensation for Mobility and Threshold Voltage Variations”, EDSSC IEEE International Conference on Electron Devices and Solid-State Circuits, June 6-8, 2018, Shenzhen, China.
(14) Jixiang Wu, Ying Wang, Xinxin Huo, Shuiping Yi, Congwei Liao and Shengdong Zhang, “An AMOLED LTPS-TFT Pixel Circuit Using Mirror Structure to Compensate Vth Variation and Voltage Drop”, EDSSC IEEE international conference on electron devices and solid-state circuits, June 6-8, 2018, Shenzhen, China.

2017年会议论文

(1) Ruibin Xie, Qiang Zhao, Yihua Ma, Fengbo Xie, Feng Lin, Shengdong Zhang, “A Power-On-Reset Circuit with Precisely Triggered Threshold Voltages”, The 13th IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC 2017), October 18-20, 2017, Hsinchu, Taiwan.
(2) Qingping Lin, Baozhu Chang, Letao Zhang, Xiaoliang Zhou, Hongyu He, Shengdong Zhang,“TiO2:Nb film thickness influences on the amorphous InGaZnO thin film transistors with Mo/TiO2:Nb source-drain electrodes,” The 13th IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC 2017), October 18-20, 2017, Hsinchu, Taiwan.
(3) Yang Shao, Xiaoliang Zhou, Qingping Lin, Letao Zhang, Huiling Lu, Shengdong Zhang, “ZnSnO Thin-Film Transistors by Reactive Co-Sputtering of Zn and Sn Metal Targets”, The 13th IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC 2017), October 18-20, 2017, Hsinchu, Taiwan.
(4) Qiang Zhao, Ruibin Xie, Yihua Ma, Fengbo Xie, Feng Lin, Shengdong Zhang,"A 27.6MHz 297uW 33 ppm/℃ CMOS Relaxation Oscillator With An Adjustable Temperature Compensation Scheme", The 13th IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC 2017), October 18-20, 2017, Hsinchu, Taiwan.
(5) Yihua Ma, Congwei Liao, Ruibin Xie, Qiang Zhao and Shengdong Zhang, “A Low-Power and High-Stable TFT Gate Driver With a Novel Bootstrap Scheme”, SID Symposium Digest of Technical Papers, pp.72 - 75, May 21–26, 2017, Los Angeles, California, USA.
(6) Huiling Lu, Letao Zhang, Xiaoliang Zhou, Hang Zhou and Shengdong Zhang, “Photocurrent Characteristics of Amorphous MgInO Thin Film Transistors”, SID Symposium Digest of Technical Papers, pp.1254 - 1257, May 21–26, 2017, Los Angeles, California, USA.
(7) Xiaoliang Zhou, Gang Wang, Yang Shao, Letao Zhang, Huiling Lu, Shuming Chen, Dedong Han, Yi Wang and Shengdong Zhang, “Parylene / Al2O3 Double Layer Passivated Amorphous InGaZnO Thin-Film Transistors”, SID Symposium Digest of Technical Papers, pp.1258 - 1261, May 21–26, 2017, Los Angeles, California, USA.
(8) Wen Yu, Dedong Han, Junchen Dong, Yingying Cong, Shengdong Zhang, Xing Zhang and Yi Wang, “Effects of Calcium Doping on Zinc Oxide Thin Film Transistors”, SID Symposium Digest of Technical Papers, pp.1265 - 1268, May 21–26, 2017, Los Angeles, California, USA.
(9) Ting Liang, Xiaodong Zhang, Xiaoliang Zhou, Letao Zhang, Huiling Lu, Hongjuan Lu and Shengdong Zhang, “Effects of N2O Plasma Treatment Time on the Performance of Self-Aligned Top-Gate amorphous oxide Thin Film Transistors”, SID Symposium Digest of Technical Papers, pp.1299 - 1302, May 21–26, 2017, Los Angeles, California, USA.
(10) Hongjuan Lu, Letao Zhang, Xiaoliang Zhou, Xiaodong Zhang, Ting Liang and Shengdong Zhang, “The Effect of Thermal Annealing Sequence on the Performance of Self-Aligned Top-Gate a-IGZO TFTs”, SID Symposium Digest of Technical Papers, pp.1303 - 1306, May 21–26, 2017, Los Angeles, California, USA.
(11) Cuicui Wang, Hing-Mo Lam, Xiaolong He, Wengao Lu and Shengdong Zhang, “A High-Voltage Analog Adder Based on Class-B Amplifier for Source Driver of AMOLED External Compensation Scheme”, SID Symposium Digest of Technical Papers, pp.1442 - 1445, May 21–26, 2017, Los Angeles, California, USA.
(12) Yizhe Sun, Huiren Peng, Shuming Chen and Shengdong Zhang, “Inverted Quantum Dot Light-Emitting Diodes with MgZnO Modified Electron Transport Layer”, SID Symposium Digest of Technical Papers, pp.1699 - 1702, May 21–26, 2017, Los Angeles, California, USA.
(13) Xiaodong Zhang, Xiaoliang Zhou, Hongjuan Lu1 and Shengdong Zhang, “Effect of Hydrogen Diffusion of Passivation Layer on the Performance of Self-Aligned Top-Gate a-IGZO TFTs”, EuroDisplay 2017, pp.1, Oct 31-Nov 2, 2017, Berlin, Germany.

2016年会议论文

(1) Huiling Lu, Ting Liang, Shengdong Zhang,“High reliability of IGZO TFTs using low-temperature fabricated organic passivation layers”,2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT),pp.638-640, October 25-28, 2016, Hangzhou, China
(2) Yukun Yang; Dedong Han; Guodong Cui; Wen Yu; Huijin Li; Junchen Dong; Xing Zhang; Yi Wang; Shengdong Zhang," Characteristic research of zinc oxide based thin film transistor by ALD technology", 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT),pp.1143-1145, October 25-28, 2016, Hangzhou, China
(3) 张晓东,周晓梁,任重阳,梁婷,张盛东,“PECVD制备SiO2栅介质的硅烷分压对a-IGZO TFTs特性的影响”,2016中国平板显示会议, 2016/9/22-2016/9/24, 中国,合肥。
(4) 邵阳,周晓梁,张乐陶,卢慧玲,张盛东,“阳极氧化非铟基金属氧化物薄膜晶体管”,2016中国平板显示会议, 2016/9/22-2016/9/24, 中国,合肥。
(5) 王翠翠,林兴武,张盛东,“一种补偿a-IGZO TFT负阈值电压的AMOLED像素电路”,2016中国平板显示会议, 2016/9/22-2016/9/24, 中国,合肥。
(6) 梁婷,周晓梁,卢红娟,张晓东,张盛东,“顶栅自对准a-IZO薄膜晶体管制备工艺研究”,2016中国平板显示会议, 2016/9/22-2016/9/24, 中国,合肥。
(7) 卢慧玲,张乐陶,周航,张盛东,“非晶MgInO薄膜晶体管紫外探测特性研究”,2016中国平板显示会议, 2016/9/22-2016/9/24, 中国,合肥。
(8) Fangfang Yang,Cuicui Wang,Hing-Mo Lam,Qiang Zhao,Jia Fan;,Shengdong Zhang,“A floating high-voltage level shifter used in a A floating high-voltage level shifter used in a pre-charge circuit for large-size AMOLED displays, ” EDSSC, 2016/8/3-2016/8/5, Hongkong.
(9) Hongjuan Lu, Chongyang Ren, Xiang Xiao, Yuxiang Xiao, Cuicui Wang and Shengdong Zhang, "Comparison of N2 and Ar plasma treatment for source/drain formation in self-aligned top-gate amorphous InGaZnO thin film transistor," AM-FPD'16, July 6-8, 2016, Kyoto, Japan.
(10) Man Zhang, Xiang Xiao, Xin Ju, Xiaodong Zhang and Shengdong Zhang, “Characteristics of amorphous In-Ga-Zn-O thin-film-transistors with channel layer deposited by bias sputtering,” AM-FPD '16, July 6-8, 2016, Kyoto, Japan.
(11) Cuicui Wang, Xue Meng, Hing-Mo Lam, Hongjuan Lu and Shengdong Zhang, “A new AC biased pixel circuit for active matrix organic light-emitting diode displays,” AM-FPD’16, July 6-8 2016, Kyoto, Japan.
(12) Chongyang Ren, Hongjuan Lu, Xiang Xiao, Wei Deng, Yuxiang Xiao and Shengdong Zhang,“Impact of Wet Etchant with Different PH Value on the Performance of Back-Channel-Etch a-IGZO Thin-Film-Transistor”,AMFPD'16 July 6-8,Kyoto,Japan.
(13) Yuxiang Xiao, Xiang Xiao, Letao Zhang, Xin Ju, Hongjuan Lu and Shengdong Zhang, "Oxygen Partial Pressure and Annealing Temperature Influence on the Performance of Back-Channel-Etch Zinc Tin Oxide Thin Film Transistors," AMFPD'16, July 6-8, 2016, Kyoto, Japan.
(14) Xin Ju, Xiang Xiao, Yuxiang Xiao, Man Zhang, and Shengdong Zhang, “Estimation of Threshold Voltage Shift in a-IGZO TFTs under Different Bias Temperature Stress by Improved Stretched-Exponential Equation,” AMFPD’16, July 6-8, 2016, Kyoto, Japan.
(15) Pan Shi,Dedong Han,Wen Yu,Zhuofa Chen,Nannan Zhao,Feilong Zhao,Shengdong Zhang, Xing Zhang, "The Research of Dual-Layer Channel ITO/MZO Thin Film Transistors," SID'16, May 21-27, 2016, San Francisco, USA.
(16) Zhijin Hu,Cuicui Wang,Congwei Liao,Shijie Cao,Jia Fan,Qiang Zhao,and Shengdong Zhang, "TFT Integrated Gate Driver with VTH Shift Compensable Low-Level Holding Unit," SID'16, May 21-27, 2016, San Francisco, USA.
(17) Cuicui Wang, Chuanli Leng, Hing-Mo Lam, Zhijin Hu, Congwei Liao, Xue Meng, Jia Fan, Tianyu Zhou, Fangfang Yang, and Shengdong Zhang, "A Peripheral Compensation Scheme for AMOLED with Data Voltage, VTH
and Aging Information Analogously Added in Pixel Circuit,"  SID'16, May 21-27, 2016, San Francisco, USA.
(18) Jia Fan,Cuicui Wang,Hing-Mo Lam,Congwei Liao,Fangfang Yang,Min Zhang,and Shengdong Zhang, "A High Accuracy Current Comparison Scheme for External Compensation Circiut of AMOLED Displays," SID'16, May 21-27, 2016, San Francisco, USA.
(19)  Zhen Song, Guoying Wang, Xiang Xiao, Wei Deng and Shengdong Zhang, "AZO Etch Buffer Layer based Back-Channel-Etch a-IGZO TFT Technology," SID'16, May 21-27, 2016, San Francisco, USA.
(20) Tianyu Zhou,Chuanli Leng,Hing-Mo Lam,Hesheng Lin,Shengdong Zhang,and Min Zhang, "An Area-Efficient Segmented R-DAC Realized by Low-Voltage Transistors for AMOLED Driver ICs," SID'16, May 21-27, 2016, San Francisco, USA.
(21) Shijie Cao, Zhijin Hu, Congwei Liao, Cuicui Wang, Jia Fan, Min Zhang and Shengdong Zhang, "A Low-Power ESL a-IGZO TFTs Integrated Gate Driver Circuit," SID'16, May 21-27, 2016, San Francisco, USA.
(22) Xue Meng, Cuicui Wang, Chuanli Leng, Hing-Mo Lam, Yuan-chun Wu, Min Zhang and Shengdong Zhang, "A Current Source Free Separate Frame Compensated Voltage-Programmed Active Matrix Organic Light Emitting Diode Pixel Circuit," SID'16, May 21-27, 2016, San Francisco, USA.
(23) He, HY ; Liu, Y; Wang, H; Lin, XN; Zheng, XR; Zhang, SD, "Analysis of 1/f Noise for Polycrystalline Silicon TFTs Considering Mobility Power-Law Parameter," 7th IEEE International Nanoelectronics Conference, Chengdu, 2016.

2015年会议论文

(1) Hsiang-chih Hsiao, Zhi-xiong Jiang , Chang-yi Su, Hong-yuan Xu, Mian Zeng, Bo Sun, Chia-yu Lee, Hang Zhou, and Shengdong Zhang, “Solution Processed P-type Top-gate Small-Molecular Organic TFT,” International Display Workshops (IDW) 2015.
(2) Shengdong Zhang, Yang Shao, Xiang Xiao and Xin He, "Anodized Oxide TFT Technology," IDMC'15 & 3DSA 2015, August 25-28, 2015, TWTC Nangang, Taiwan.
(3) Guoying Wang, Zhen Song, Xiang Xiao and Shengdong Zhang, “Effects of Over-Etching Time on the Characteristics of Amorphous IGZO Thin-Film Transistors with Back-Channel-Etch Structure,” AMFPD'15, pp.107-110, July1-3, 2015, Kyoto, Japan.
(4) Pan Shi, Dedong Han, Yi Zhang, Wen Yu, Lingling Huang, Yingying Cong,Xiaoliang Zhou, Zhuofa Chen, Junchen Dong, Shengdong Zhang, Xing Zhang, and Yi Wang,"Fully-transparent Mo-doped ZnO TFTs Fabricated in Different Oxygen Partial Pressure at Low Temperature," AM-FPD Symposium Digest of Technical Papers,pp111-114.,July 1-4,2015,Kyoto,Japan.
(5) Xin He, Ling Wang, Wei Deng, Xiang Xiao, Letao Zhang, Chuanli Leng, Mansun Chan, and Shengdong Zhang, “Improved Electrical Stability of Double-Gate a-IGZO TFTs,” SID Symposium Digest of Technical Papers, pp.1151-1155, June 2–5,  2015, San Jose, California, USA.
(6) Congwei Liao, Zhijin Hu, Junmei Li, Wenjie Li, Shijie Cao, and Shengdong Zhang, “A Simple Low Temperature Workable a-Si:H TFT Integrated Gate Driver on Array,” SID Symposium Digest of Technical Papers, pp.1316-1320, June 2–5,  2015, San Jose, California, USA.
(7) Chuanli Leng, Xin He, Hing-Mo Lam, Xue Meng, Cuicui Wang, Yuan-chun Wu, Kai-Yuan Ko, and Shengdong Zhang, “Row-Division Driving Scheme for Active Matrix OLED Displays,” SID Symposium Digest of Technical Papers, pp.1308-1312, June 2–5,  2015, San Jose, California, USA.
(8) Pan Shi, Dedong Han, Wen Yu, Zhuofa Chen, Nannan Zhao, Feilong Zhao, Jing Wu, Junchen Dong, Yingying Cong, Lingling Huang, Yi Zhang, Shengdong Zhang, Xing Zhang and Yi Wang, “The Research of Dual-Layer Channel ITO/MZO Thin Film Transistors Fabricated on Glass at Low Temperature,” SID Symposium Digest of Technical Papers, pp.1176-1180, June 2–5,  2015, San Jose, California, USA.
(9) Nannan Zhao, Dedong Han,  Zhuofa Chen, Jing Wu, Yingying Cong, Junchen Dong, Feilong Zhao, Shengdong Zhang, Xing Zhang, Yi Wang, “High-performance fully transparent Ti-Zn-O thin film transistors,” VLSI Technology, Systems and Application (VLSI-TSA), 2015 International Symposium on, pp. 1 – 2, 27-29 April 2015, Hsinchu, Taiwan.
(10)  Kai Zhu, Yucui Wu, Min Zhang, "High-performance carbon nanotube/InGaZnO composite thin film transistors and concentration effect," 2015 IEEE 15th International Conference on Nanotechnology (IEEE-NANO). Proceedings.
(11)  Weikai Jiang, Hing-Mo Lam, Hui Shao, Hesheng Lin, Min Zhang*,"A Distributive On-Chip Voltage Regulation Scheme for Power Supply Design in AMOLED Driver ICs,"IEEE International Conf. on ASIC, 3-6 Nov.2015.
(12)  Hesheng Lin, Min Zhang, Wing Chun Chan, Wai Kwong Lee, "A Novel Linear Regulator in Build-in Capacitor Dickson Charge Pump Applications with Low Output Ripple," IEEE International Conf. on Electron Devices and Solid-State Circuits, Singapore, June 2- 4, 2015.
(13)  Hesheng Lin, Min Zhang,Wing Chun Chan, Wai Kwong Lee, "A Low-Power Regulator for Display Driver IC Requiring a Moderate Current Drivability," IEEE International Conf. on Electron Devices and Solid-State Circuits, Singapore, June 2- 4, 2015.
(14) Yanyan Deng, Yucui Wu, Min Zhang, "Annealing Temperature Optimization for High-Performance Carbon Nanotube Thin Film Transistors,"  IEEE International Conf. on Electron Devices and Solid-State Circuits, Singapore, June 2- 4, 2015.
(15)  Ke Liu, Qian Li*, “Highly coherent supercontinuum generation with picosecond pulses by using pulse compression in a stepwise decreasing dispersion fiber,” 2015 Asia Communications and Photonics Conference (ACP2015), 19-23 November, Hong Kong, AS4C.3.
(16)  Wei Lu, Qian Li*, P. K. A. Wai, “Simultaneous compression and coherent combination of multiple optical pulses in the same pulse train using nonlinear optical fibers,” 2015 Asia Communications and Photonics Conference (ACP2015), 19-23 November, Hong Kong, AS4C.4.
(17)  Cai Wen, Hui Huang, Zihao Cheng, Qian Li*, “Influence of a weak continuous wave trigger on continuous wave pumped supercontinuum generation,” 2015 Frontiers in Optics/Laser Science Conference (Fio/LS 2015), San Jose, California, USA,18-22 Oct, JW2A.5.
(18)  Zihao Cheng, Qian Li*, “Three-stage third-order soliton compression,” 2015 Frontiers in Optics/Laser Science Conference (Fio/LS 2015), San Jose, California, USA, 18-22 Oct, FM3G.7.
(19)  Feng Li, Qian Li, Jinhui Yuan, P. K. A. Wai, “Highly coherent supercontinuum pumped by a picosecond pulse with a PCF taper,” 2015 Pacific Rim Conference Lasers and Electro-Optics (CLEO Pacific Rim 2015), Busan, Korea, 24-28 Aug, 26C3-4.
(20)  Xiaoqi Duan, Qian Li*, “Control of optical rogue waves in the femtosecond supercontinuum generation using a weak continuous wave trigger,” 2015 Pacific Rim Conference Lasers and Electro-Optics (CLEO Pacific Rim 2015),Busan, Korea, 24-28 Aug, 25C3-7.
(21)  Mingfeng Li, Qian Li*, “Spectral compression of chirped Gaussian pulse in nonlinear optical fibers with exponentially increasing dispersion,” 2015 Nonlinear Optics (NLO2015), 26-31 Jul, Hawaii, USA, NW4A.20.
(22)  Dongfei Zhang, Qian Li*, “Influence of an incoherent CW trigger on picosecond supercontinuum generation,” 2015 Nonlinear Optics (NLO2015), 26-31 Jul, Hawaii, USA, NW4A.21.
(23)  Zhonggao Xia, Gaoda Chai, Yan Wang, Hang Zhou, "Uniform Perovskite Photovoltaic Thin Films via Ultrasonic Spray," Proceedings of the 42th IEEE Photovoltaic specialists Conference,  New Orleans, June 14-19,c 2015.
(24)  Yan Wang, Zhonggao Xia, Yiming Liu, Hang Zhou, "Simulation of perovskite solar cells with inorganic hole transporting materials," Proceedings of the 42nd IEEE Photovoltaic specialists Conference, New Orleans, June 14-19,c 2015.
(25)  Lei Bao, Bin Li, Hang Zhou,Hui Li, Xiangxin Liu, "Graphene Oxide Doped Single-walled Carbon Nanotube Thin Film as Back Electrode for CdTe Solar Cell," Proceedings of the 10th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, 7-11 April 2015, Xi'an, China.

2014年会议论文

(1) Hui Huang, Qian Li, “Effective pulse compression in photonic crystal fibers with linearly varying dispersion and nonlinearity,” 2014 Nonlinear Photonics (NP) Topical Meeting, 27-31 July 2014, Barcelona, Spain, JTU3A.22.
(2) Hui Huang, Qian Li, “Efficient pulse compression in nonlinear fibers with linearly varying dispersion and nonlinear coefficients,” OptoElectronics and Communications Conference and Australian Conference on Optical Fibre Technology (OECC/ACOFT 2014), 6-10 Jul 2014, Melbourne, Australia, TH12D-4.
(3) Peng Zhang, Xiang Xiao, Ling Wang, Yang Shao, and Shengdong Zhang*, "Homojunction In2O3-TFTs Prepared by Anodization Technique,"AM-FPD '14, Juy. 2-4, 2014, Japan.
(4) Lei Xie, Yang Shao, Xiang Xiao, Letao Zhang, Xiaobin Bi and Shengdong Zhang, "Fabrication of Indium-Tin-Oxide Thin-Film Transistor Using Anodization," AM-FPD '14, Juy. 2-4, 2014, Japan.
(5) Stefan Weizhi Meng, Letao Zhang, Xiang Xiao and Shengdong Zhang, "Study on the Transition between p and n Types of SnOx Film Deposited by DC Sputtering," AM-FPD '14, Juy. 2-4, 2014, Japan.
(6) Xiaobin Bi, Jianke Yao and Shengdong Zhang, "Magnesium-doped Indium Oxide Thin Film Transistors for Ultraviolet Detection," 2014 IEEE EDSSC, Jun. 18-20, 2014, Chengdu,China.
(7) Junmei Li,Congwei Liao,ZhiJin Hu,Wenjie Li and Shengdong Zhang*, "A Concrete Integrated Gate Driver with Sharing Low-level-holding Structure," 2014 IEEE EDSSC, Jun. 18-20, 2014,Chengdu,China.
(8) Yang Liu, Longyan Wang, and Shengdong Zhang, "Development of Low Temperature Amorphous Tin-doped Indium Oxide Thin-Film Transistors Technology," 2014 IEEE EDSSC, Jun. 18-20, 2014, Chengdu,China.
(9) Yuying Cai, Lisa Ling Wang, Shengdong Zhang, "A Gate-stress-induced ΔVth Model Reflecting Impact of Electric Field in IGZO Thin Film Transistors," 2014 IEEE EDSSC, Jun. 18-20, 2014, Chengdu,China.
(10) Shuguang Zhang, Letao Zhang, Xiang Xiao and Shengdong Zhang, "Influence of O2 on Al-Zn-Sn-O TFTs in the Active Layer Deposition and Annealing Process," 2014 IEEE EDSSC, Jun. 18-20, 2014, Chengdu,China.
(11) Congwei Liao, Zhijin Hu, Wenjie Li, Junmei Li, Shengdong Zhang, "IGZO-TFT Based Latch Circuit with High Stability and Full-Swing Output for System-on-Panel," SID 2014 DIGEST, Jun. 1-3, 2014, San Diego.
(12) Zhijin Hu, Congwei Liao, Junmei Li, Wenjie Li, Shengdong Zhang, "A-Si:H TFT Gate Driver with Shared Dual Pull-Down Units for Large-Sized TFT-LCD Applications," SID 2014 DIGEST, Jun. 1-3, 2014, San Diego.
(13) Longyan Wang, Yang Liu, Xin He, Yang Shao, Xiang Xiao, and Shengdong Zhang, "Oxide TFT Panel with ITO as Channel Layer, Source/Drain and Pixel Electrode," 10th International Thin-Film Transistor Conference (ITC 2014),Jan. 23-25, 2014,  Holland.

2013年会议论文

(1) Shipeng Chi, Xiang Xiao, and Xin He, *Shengdong Zhang, “Self-Aligned Top-Gate a-IGZO Thin-Film Transistor with N2 Plasma-Treated Source/Drain Regions," 20th International Display Workshops (IDW), Dec. 4-6,2013, pp. 416-418, Sapporo, Japan.
(2) Chuanli Leng, Longyan Wang,  and Shengdong Zhang*, "An AMOLED Pixel Circuit with Negative VTH Compensation Function," 20th International Display Workshops (IDW), Dec. 4-6, 2013, pp. 379-382,Sapporo,Japan.
(3) Qian Li and Hui Huang, “Spectral compression of femtosecond pulses in dispersion flattened and dispersion exponentially increasing fibers, ” 2013 Asia Communications and Photonics Conference (ACP 2013), Nov. 12-15, 2013, Beijing, China.
(4) Qian Li, Hui Huang, Huiling Lu, and Shendong Zhang, “Effects of third-order dispersion on self-similar pulse compression in nonlinear fibers,” 2013 Asia Communications and Photonics Conference (ACP 2013), Nov. 12-15, 2013, Beijing, China.
(5) Xin He, Longyan Wang, Shaojuan Li, Mansun Chan, and Shengdong Zhang*,"Implementation of Multi-threshold Voltage a-IGZO TFTs with Oxygen Plasma Treatment," International Conference on Solid State Devices and Material (SSDM), Sep. 24-28, 2013, pp. 192-193, Fukuoka.
(6) Chuanhong Liu, Guangyao Su, Fangwang Gou, and Zhaoyu Zhang*, "Absorption Enhancement of a-Si Thin Film Solar Cells through Surface Plasmon Polaritons and Cavity Resonance,” NUSOD 2013, Aug. 19-22, 2013, Vancouver, Canada.
(7) Suoming Zhang, Dedong Han, Shuyang Wang, Yu Tian, Dongfang Shan, Fuqing Huang, Cong Yingying, Xing Zhang, Shengdong Zhang, and Yi Wang, “Fabrication optimization to improve performance of gallium-doped zinc oxide thin film transistors,” 2013 Twentieth International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD), Jul. 2-5, 2013, Kyoto, Japan.
(8) Qian Li, K. Nakkeeran, and P. K. A. Wai, “Generation of high-repetition-rate ultrashort pulse train at 850 nm,” Proc. of Pacific Rim Conference Lasers and Electro-Optics (CLEO®/Pacific Rim 2013), Kyoto, Japan, Jun. 30-Jul. 4, 2013, paper WPB-11.
(9) Zhijin Hu, Congwei Liao, Can Zheng, and Shengdong Zhang, “A High-Speed and Reliable TFT Integrated Shift Register,” IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC), Jun. 3-5, 2013, 6628173, Hong Kong.
(10) Fuqing Huang, Dedong Han, Dongfang Shan, Yu Tian, Suoming Zhang, Yingying Cong, Yi Wang, Lifeng Liu, Xing Zhang, and Shengdong Zhang, “Room-temperature fabrication of flexible gallium-doped zinc oxide thin-film transistors on plastic substrates,” IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC), Jun. 3-5, 2013, Hong Kong.
(11) Dongfang Shan Dedong Han, Fuqing Huang, Yu Tian, Suoming Zhang, Yingying Cong, Yi Wang, Lifeng Liu, Xing Zhang, and Shengdong Zhang, “Fabrication and characteristics of fully transparent Aluminum-doped zinc oxide thin-film transistors," IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC), Jun. 3-5, 2013, Hong Kong.
(12) Congwei Liao, Zhijin Hu, Chuanli Leng, Can Zheng, and Shengdong Zhang, “A Charge-Cyclic Digital-to-Analog Converter for IGZO TFT Integrated Data Driver,” SID 2013, May 20-24, 2013, pp. 999–1002, Vancouver, Canada.
(13) Suoming Zhang , Yu Tian, Dedong Han, Dongfang Shan, Fuqing Huang, Shuyang Wang, Xing Zhang, Shengdong Zhang,  and Yi Wang, “High-performance fully transparent Ga-doped ZnO TFTs fabricated by RF Magnetron Sputtering,” 2013 International Symposium on VLSI Technology, Systems, and Applications (VLSI-TSA), Apr. 22-24, 2013, 6545630, Hsinchu, Taiwan.
(14) Changwei Zheng and Shengdong Zhang, “Boron doped ZnO thin films and TFTs fabricated by magnetron sputtering,” Proceedings of China Display/Asia Display, Mar. 20-21, 2013, Shanghai, China.
(15) Jianke Yao, R. H. Fu , C. W. Zheng , C. W. Liao , L. Xie , X. B. Bi , and Shengdong Zhang, “The ultraviolet photo detecting properties of a-IGZO TFTs,” Proceedings of China Display/Asia Display,  Mar. 20-21, 2013, Shanghai, China.
(16) Xudong Liu, Feifei Shi, and Zhaoyu Zhang*, “Plasmonic ring laser cavity with tiny footprint,” SPIE 2013, vol. 8619, Feb. 4-7, 2013.
(17) Siyao Guo, Guangyao Su, Deng Xiao, and Zhaoyu Zhang*, "Broadband light absorption enhancement in thin-film solar cells by combining front dielectric and back metal gratings,” SPIE 2013, vol. 8620, Feb. 4-7, 2013.
(18) Guangyao Su, Fangwang Gou, Chuanhong Liu, Siyao Guo, and Zhaoyu Zhang, "Thin film solar cells based on cavity enhanced grating structure," SPIE 2013, vol. 8620, Feb. 4-7, 2013.
(19) Feifei Shi, Xudong Liu, Xin Gong, and Zhaoyu Zhang*, “Cross-section curvature effect in plasmonic ring lasers,” SPIE 2013, vol. 8809,  Feb. 4-7, 2013.

2012年会议论文

(1) Wei Deng, Xin He, Xiang Xiao, and Shengdong Zhang*, “Comparative Study of a-IGZO TFTs Deposited by RF and DC Sputtering,” IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC), Dec. 3-5, 2012, 6482857, Bangkok, Thailand.
(2) Can Zheng, Congwei Liao, Jianhua Li, and Shengdong Zhang*, “Design of Driving Transistorin a-Si:H TFT Gate Driver Circuit,” IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC), Dec. 3-5, 2012, 6482840, Bangkok, Thailand.
(3) Lisa L. Wang, James B. Kuo*,and Shengdong Zhang*, “Modeling Hot-Carrier-Induced Reliability of Poly-Silicon Thin Film Transistors,” IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC), Dec. 3-5, 2012, 6482798, Bangkok, Thailand.
(4) Dedong Han*, Youfeng Geng, Jian Cai, Wei Wang, Liangliang Wang, Yu Tian, Yi Wang, Lifeng Liu, and Shengdong Zhang, “Reliability Study of Zinc Oxide Thin-Film Transistor with High-K Gate Dielectric,” IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC), Dec. 3-5, 2012, 6482837, Bangkok, Thailand.
(5) Tony C. Liu and James B. Kuo, and Shengdong Zhang*, “Grain-Boundary Impact Ionization-Induced Current Hump Effects,” The International Electron Devices and Materials Symposium 2012 (IEDMS 2012), Nov. 29-30, Taiwan.
(6) ShaoJuan Li, Xin He, Dedong Han, Yi Wang, Lei Sun, and Shengdong Zhang, “Enhanced Performance of ZnO Thin-Film Transistors with ZnO Dual-Active-Layer,“ IEEE ICSICT 2012, Oct.29-Nov.1, 2012, Xi’an, China.
(7) Tony C. Liu, James B. Kuo, and Shengdong. Zhang, “Channel Length-Dependent Parasitic Bipolar Transistor Effect In Poly-Si TFTs Considering Traps At Grain Boundary,“ IEEE ICSICT 2012, Oct.29-Nov.1, 2012, Xi’an, China.
(8) Ruhai Fu, Congwei Liao, Chuanli Leng, and Shengdong Zhang, “An IGZO TFT Based In-Cell Capacitance Touch Sensor,“ IEEE ICSICT 2012, Oct.29-Nov.1, 2012, Xi’an, China.
(9) Chuanli Leng, Congwei Liao, Longyan Wang, Shengdong Zhang,“An a-IGZO TFT Pixel Circuit for AMOLED with Simultaneous VT Compensation,“ IEEE ICSICT 2012, Oct.29-Nov.1, 2012, Xi’an, China.
(10) Youfeng Geng, Dedong Han, Jian Cai, Wei Wang, Liangliang Wang, and Shengdong.Zhang,“High Performance Dual-layer Channel ZnO Thin-Film Transistor,“ SSDM 2012, Sep. 25-27, 2012, Japan.
(11) Jian Cai, Dedong Han, Youfeng Geng, Wei Wang, Liangliang Wang, Yu Tian, Huikun Yao, Lixun Qian, Shengdong Zhang*,and Yi Wang, “High-Performance Transparent Top-Gate AZO TFTs Fabricated by Low-Temperature Process,” the 2012 International Conference on Solid State Devices and Materials (SSDM 2012), Sep. 25-27,Japan.
(12) Wei Wang, Dedong Han, Jian Cai, Youfeng Geng, Liangliang Wang, Yu Tian, Yi Wang, and Shengdong Zhang, “Fully Transparent AZO Thin-film Transistors Fabricated on Flexible Plastic Substrates at Room Temperature,“ SSDM 2012, Sep. 25-27, 2012, Japan.
(13) Wei Wang, Dedong Han, and Jian Cai,“Al-doped ZnO Thin-Film Transistors on Flexible Plastic Substrates,“ The Nineteenth International Workshop on Active-Matrix Flat Panel Displays and Devices(AM-FPD), Jul. 23-25, 2012, Japan.
(14) Tony. C. Liu, Janmes B. Kuo, and Shengdong Zhang,“Floating-Body Kink Effect: Poly-Si TFT Versus SOI CMOS,” EuroSOI, Jun. 21-23, 2012.
(15) Shanjuan Li, Lei Sun, Dedong Han, Yi Wang, Ruqi Han, Shengdong Zhang,“Stability of Zinc Oxide Thin-Film Transistors,” ECS Transactions,Vol. 44, No. 1, pp. 57-62, May 2012.
(16) Xia Li*, Junhao Chu, Longxia Li, Ning Dai, ShengdongZhang, Fujia Zhang, “Fabrication and Characterization of Room Temperature Nuclear Radiation CdZnTe3×3 Pixel Array Detector,” 2012 Symposium on Photonics and Optoelectronics (SOPO 2012), May 21-23, 2012, 6270904, Shanghai, China.
(17) Dedong Han, Jian Cai, Wei Wang, Liangliang Wang, Yi Wang, and ShendongZhang, “High performance Aluminum-doped ZnO thin film transistors with high-K gate dielectrics fabricated at low temperature,” European Materials Research Society(E-MRS), May 15-17, 2012, France.
(18) Dedong Han*, WeiWang, Jian Cai, Liangliang Wang, Yicheng Ren, Yi Wang,and Shengdong Zhang, “Flexible Thin-Film Transistors Fabricated on Plastic substrate at room temperature,” European Materials Research Society(E-MRS), May 15-17,2012,France.
(19) Jian Cai, Dedong Han, Wei Wang, Liangliang Wang,Yi Wang, and ShendongZhang, “High Performance RF Sputtering Deposited AZO Thin-Film Transistors after a Post-Annealing Process,” 2012 Second International Conference on Electric Information and Control Engineering (ICEICE 2012), Apr. 6-8, 2012, pp. 693–695, Lushan, China.
(20) Xia Li*, Shuo Sun, Jian Suo, Shengdong Zhang, Fujia Zhang, “XRD Analysize PTCDA Film Evaporatived on p-Si(110) Substrate,” 2012 Symposium on Photonics and Optoelectronics (SOPO 2012), May 21-23, 2012, 6270557, Shanghai, China.

2011年会议论文

(1) Yicheng Ren, Dedong Han*, Lei Sun, Gang Du, Shengdong Zhang, Xiaoyan Liu, and Yi Wang*,  “Effects of Non-Uniform Grains Distribution of the Intrinsic N-Channel Poly crystalline Silicon TFTs,” IEEE International Conference on Electron Device and Solid-State Circuits 2011, Nov. 17-18, 2011, 6117673, Tianjin, China.
(2) Shaojuan Li, Dedong Han, Yi Wang, and Shengdong Zhang*, “High Performance Reactive Sputtering Deposited Zno Thin-Film Transistors on Transparent Substrate,” IEEE International Conference on Electron Devices and Solid-State Circuits, Nov. 17-18, 2011, 6117749, Tianjin, China.
(3) Xin Lin and Shengdong Zhang*, “High Performance Zn1-Xmgxo TFTs for UV Image Sensors,” IEEE International Conference on Electron Devices and Solid-State Circuits, Nov. 17-18, 2011, Tianjin, China.
(4) Jianke Yao and ShengdongZhang*, “Effects of channel composition and gate dielectrics on the stability of a-IGZO TFTs,” The 12th Asian Symposium on Information Display (ASID), Nov. 6-9, 2011, pp. 373-376, Kunshan, China.
(5) Yinlong Li, Xin He, Xin Lin, Beibei Jiang, Shaojuan Li, and Shengdong Zhang*, “Low-temperature materials and thin film transistors for flexible electronics,” The 12th Asian Symposium on Information Display (ASID), Nov. 6-9, 2011, pp. 397-400, Kunshan, China.
(6) Xin He, Shaojuan Li, Xinnan Lin, Beibei Jiang, Yinlong Li, and ShengdongZhang*, “The Source/Drain Resistance of a-IGZO TFT”, The 12th Asian Symposium on Information Display (ASID), Nov. 6-9, 2011, pp. 540-542, Kunshan, China.
(7) Beibei Jiang, Xin Lin, Shaojuan Li, Xin He, Yinglong Li, and Shengdong Zhang*, “Structural, Electrical and Optical Properties of Zn1-xMgxO Films Prepared Reactive DC Sputtering,” The 12th Asian Symposium on Information Display (ASID), Nov. 6-9, 2011, pp. 556-559, Kunshan, China.
(8) Xin Lin, Beibei Jiang, Shaojuan Li, Yinglong Li, Xin He, and Shengdong Zhang*, “Reactive DC Magnetron Sputtering Deposited ZnMgO Transparent Thin-Film Transistors”, The 12th Asian Symposium on Information Display (ASID), Nov. 6-9, 2011, pp. 568-571, Kunshan, China.
(9)  Xiaoming Liu, Congwei Liao, Tao Chen, David Dai, Smart Chung, T. S. Jen, and Shengdong Zhang*, “Hybrid Driving Scheme of a-Si TFT pixel circuit for AMOLEDs,” The 12th Asian Symposium on Information Display (ASID), Nov. 6-9, 2011, pp. 208-211, Kunshan, China.
(10) Congwei Liao, Xiaoming Liu, Tao Chen, David Dai, Smart Chung, T. S. Jen, and Shengdong Zhang*, “Data Signal Induced Feed-through Effects in Integrated a-Si:H Gate Driver,” The 12th Asian Symposium on Information Display (ASID), Nov. 6-9, 2011, pp. 389-392, Kunshan, China.
(11) Shaojuan Li, Dedong Han, Lei Sun, Yi Wang, Ru-Qi Han, and Shengdong Zhang*, “High Performance RF Sputtering Deposited ZnO Thin-Film Transistors,” The 12th Asian Symposium on Information Display (ASID), Nov. 6-9, 2011, pp. 393-396, Kunshan, China.
(12) Tao Chen, Congwei Liao, Xiaoming Liu, David Dai, Smart Chung, T. S. Jen, and Shengdong Zhang*, “A Compact Integrated Hydrogenated Amorphous Silicon Gate Driver for TFT- LCD,” The 12th Asian Symposium on Information Display (ASID), Nov. 6-9, 2011, pp. 530-533, Kunshan, China.
(13) Yicheng Ren, Dedong Han*, Lei Sun, Gang Du, Shengdong Zhang, Xiaoyan Liu, and Yi Wang*, “Performance of Asynchronous Double-gate Poly-Si Thin-film Transistors”, The 12th Asian Symposium on Information Display (ASID), Nov. 6-9, 2011, pp. 552-555, Kunshan, China.
(14) Huajie Luo, Shengdong Zhang, and Peng Jin*, “Optimization of Trichromatic Color Temperature Tunable White Light LEDs,” 2011 International Conference on Electronics and Optoelectronics (ICEOE), Jul. 29-31, 2011, pp. 3287-3297, Dalian, China.
(15) Chunyu Yu*, Lingli Kong, Junju Zhang, and Shengdong Zhang, “3D Information Extraction Based on A Novel X-Ray Imaging System,” International Symposium on Photoelectronic Detection and Imaging 2011: Advances in Imaging Detectors and Applications, May 24-26, 2011, 81942M, Beijing, China.
(16) Chunyu Yu*, Lingli Kong, Junju Zhang, and Shengdong Zhang, "The X-Ray Imaging System’S Requirements for CCD Pixel," International Symposium on Photoelectronic Detection and Imaging 2011: Advances in Imaging Detectors and Applications, May 24-26, 2011, 819415, Beijing, China.
(17) Chunyu Yu*, Lingli Kong, Junju Zhang, and Shengdong Zhang, “The Low Light Level Image Intensifier’s Application in X Ray Imaging,” International Symposium on Photoelectronic Detection and Imaging 2011: Advances in Imaging Detectors and Applications, May 24-26, 2011, 81941M, Beijing, China.
(18) Chunyu Yu*, Lingli Kong, Junju Zhang, and Shengdong Zhang, "Light Decreases Through the X-Ray Imaging Chain,” International Symposium on Photoelectronic Detection and Imaging 2011: Advances in Imaging Detectors and Applications, May 24-26, 2011, 81941V, Beijing, China.
(19)  Xia Li*, ShengdongZhang, Fujia Zhang, Jing Wang, and Haoli Zhang," Fabrication technology and characterization of PTCDA/p-Si photo-electronic detector", 2011 Symposium on Photonics and Opto electronics (SOPO2011), May 16-18, 2011, 5780671, Wuhan, China.

2010年会议论文

(1) Changde He, Congwei Liao, Yinan Liang, and Shengdong Zhang,“A New Integrated Gate Driver with Shift Register Circuits Employing 4 Clocks for 14.1-inch TFT-LCD,“ International Conference on Electrical and Control Engineering, ICECE 2010 June 26-28, 2010.
(2) Linfeng Du and Shengdong Zhang,“RDF Effect Induced by Source/Drain Doping in Nano-Scale UTB SOI MOSFET with Nominally Un-doped Channel,” Proceedings of 2010 IEEE Conference on Electron Devices and Solid-State Circuits,December 15-17, 2010, pp. 683-686, Hong Kong.
(3) Longyan Wang, Congwei Liao, Yinan Liang, and Shengdong Zhang,“A New Four-Transistor Poly-Si TFT Pixel Circuit for AMOLED,” The 10th International Conference on Solid-State and Integrated-Circuit Technology, Nov. 1-4, pp. 1453-1455, 2010.
(4) Congwei Liao, Longyan Wang, Changde He, Yinan Liang, David Dai, Smart Chung,T. S. Jen,and Shengdong Zhang,“A Fast Integrated a-Si Gate Driver,” The 10th International Conference on Solid-State and Integrated-Circuit Technology Nov. 1-4, pp. 1438-1440, 2010.
(5) Linfeng Du, Shengdong Zhang,“Source/Drain Doping Induced Vth Variation in Nano-scale UTB SOI MOSFET,” 2010 International Conference on Solid State Device and Materials (SSDM),September 22 -24, Tokyo, Japan.

2009年及以前会议论文

(1) Changde He, Congwei Liao, Yinan Liang and Shengdong Zhang,“Integrated a-Si:H TFT Gate driver for 14.1-inch WXGA TFT-LCD”,Digest of Technical Papers, ASID’09, pp. 63-66.
(2) Congwei Liao, Changde He, Yinan Liang and Shengdong Zhang,“A New Integrated a-Si:H TFT Gate Driver with Q Node quasi-Grounded”,Digest of Technical Papers, ASID’09, pp. 55-58.
(3) Yinan Liang, Congwei Liao, Changde He, and Shengdong Zhang,“Error Current Effects in Current-Programmed Pixel Circuits For AMOLED”,Digest of Technical Papers, ASID’09, pp. 152-156.
(4) Shao-Juan Li1, Lei Sun1, Yi Wang1, Ruqi Han1 and Shengdong Zhang,“Reactive Sputtered Deposition and Etched Patterning of ZnO Films for Active Matrix Flate Panel Display (AM FPD),” Digest of Technical Papers, ASID’09, pp. 286-289.
(5) Congwei Liao, Shengdong Zhang,“A Novel Super-Halo Doping Concept for Nanoscale CMOS Technology,” ECS Transactions, Vol.18(1), ISTC/CSTIS 2009 (CISTC), pp. 111-116.
(6) Linfeng Du, Hui Deng, Gang Du and Shengdong Zhang,“Characteristic Variations Induced by Random Fluctuation of Source/Drain Lateral Distribution Dopant in Nano-Scale UTB SOI MOSFET,” ECS Transactions, Vol.18(1), ISTC/CSTIS 2009 (CISTC) , pp. 77-81.
(7) Dedong Han, Yi Wang, Shengdong Zhang, Lei Sun and Ruqi Han,”Fabrication and Characteristics of ZnO-based Thin Film Transistors,” The 9th International Conference on Solid-State and Integrated-Circuit Technology Oct. 20~23, pp. 982-984, 2008.
(8) Xu Han, Dingyu Li, Chengen Yang and Shengdong Zhang,”A Simple Nano-Scale Patterning Technology for FinFET Fabrication,” The 9th International Conference on Solid-State and Integrated-Circuit Technology Oct. 20~23, pp. 184-186, 2008.
(9) M. Chan, Shengdong Zhang, X. Lin, X. Wu, and P. C. H. Chan (invited),”3-Dimensional Integration for Interconnect Reduction in for Nano-CMOS Technologies,” IEEE Tencon, November 23, 2006, Hong Kong.
(10) Wei Ke, Xu Han, Dingyu Li, Xiaoyan Liu, Ruqi Han, and Shengdong Zhang,”Recessed Source/Drian for Scaling SOI MOSFET to the Limit,” The 8th International Conference on Solid-State and Integrated-Circuit Technology Oct. 23~26, pp. 84-86, 2006.
(11) Ji Cao, Dingyu Li, Wei Ke, Lei Sun, Ruqi Han, and Shengdong Zhang,”T-Shaped Body Silicon-on-Insulator (SOI) MOSFET,” The 8th International Conference on Solid-State and Integrated-Circuit Technology pp. 1293-1295, Oct. 23~26, 2006.
(12) Wei Ke, Shengdong Zhang, X. Liu, and Ruqi Han,”Soruce/Drain Resistance of UTB SOI MOSFET,” Proceedings of 2005 IEEE Conference on Electron Devices and Solid-State Circuits December 19-21, 2005, pp. 405-408, Hong Kong.
(13) Dingyu Li, We Ke, L. Sun, Ruqi Han, and Shengdong Zhang,”A MOS Transistor with Source/Drain on Insulator and Channel Doped in Step-Function Profile,” Proceedings of 2005 IEEE Conference on Electron Devices and Solid-State Circuits December 19-21, 2005, pp. 683-686, Hong Kong.
(14) X. Wu, P. C. Chan, Shengdong Zhang, and Mansun Chan,”A Capped Trimming Hard-Mask Patterning Technique for Integration of Nano-Devices and Conventional Integrated Circuits,” Proceedings of 2005 IEEE Conference on Electron Devices and Solid-State Circuits December 19-21, 2005, pp. 781-784, Hong Kong.
(15) Philip C.H. Chan, Xusheng Wu, Shengdong Zhang, Chuguang Feng, Mansun Chan,“Three-Dimensional Stacked-Fin-CMOS Integrated Circuit Using Double Layer SOI Material,” The 7th International Conference on Solid-State and Integrated-Circuit Technology Oct. 19~21, 2004.
(16) Wei Ke, Shengdong Zhang, Xiaoyan Liu and Ruqi Han, “Scalability and Parasitic Effect of UTB SOI MOSFETs with Raised S/Dand Sunk S/D,” The 7th International Conference on Solid-State and Integrated-Circuit Technology Oct. 19~21, 2004.
(17) Dingyu Li, Lei Sun, Zhiliang Xia, Shengdong Zhang, Xiaoyan Liu, Jinfeng Kang, Ruqi Han,”Novel Schottky Barrier MOSFET with Dual-layer Silicide Source/Drain Structure,” The 7th International Conference on Solid-State and Integrated-Circuit Technology  Oct. 19~21, 2004.
(18) Shengdong Zhang, Xinnan Lin, Ruqi Han, Xusheng Wu and Mansun Chan,”Vertical SOI CMOS Technology with p-MOSFET on SOI Film and n-MOSFET on bulk base,” 2004 International Conference on Solid State Device and Materials (SSDM),September 14 – 27, pp. 770-771, Tokyo, Japan.
(19) Zhikuan Zhang, Shengdong Zhang and Mansun Chan, “Self-Aligned Recessed Source/Drain Ultra-Thin Body SOI MOSFET Technology,” Proceedings of the 34th European Solid-State Device Research Conference (ESSDERC 2004)September 21-23, 2004, pp. 301-304, Leuven, Belgium.
(20) Z. Zhang, Shengdong Zhang, C. Feng, and M. Chan,”A Study of Source/Drain-On-Insulator Structure for Extremely Scaled MOSFETs,” 62nd Device Research Conference Digest, pp. 115-116, June 21-23, 2004, U.S.A..
(21) X. Wu, Shengdong Zhang, M. Chan, and P. Chan,”Design of Sub-50nm Ultrathin-Body (UTB) SOI MOSFETs with Raised S/D,” Proceedings of 2003 IEEE Conference on Electron Devices and Solid-State Circuits December 16-18, 2003, pp. 327-330, Hong Kong.
(22) Shengdong Zhang, Ruqi Han, Zhikuan Zhang, Xinnan Lin, Ping K. Ko and Mansun Chan, ”A Viable Self-aligned Bottom-Gate MOSFET Technology for High Density and Low Voltage SRAM,” 32st European Solid-State Device Research Conference (ESSDERC 2001) September, 2002.
(23) Jagar Singh, Shengdong Zhang, and Mansun Chan,”A Unified Predictive TFT Model with Capability for Statistical Simulation,” 2001 International Semiconductor Device Research Symposium, December 5-7, 2001,Holiday Inn Georgetown 2001 Wisconsin Avenue, N.W. Washington, D. C.
(24) Shengdong Zhang, Ruqi Han, Johnny K. O. Sin, and Mansun Chan,”A Self-Aligned Double-Gate Polysilicon TFT Technology”,2001 International Semiconductor Device Research Symposium, December5-7, 2001,Holiday Inn Georgetown 2001 Wisconsin Avenue, N.W. Washington, D. C.
(25) Xinnan Lin, Chuguang Feng, Shengdong Zhang, Wai-Hung Ho, and Mansun Chan,“A Simple Method to Fabricate Double-Gate SOI MOSFET with Diffusion Layer on Bulk Silicon Wafer as the Bottom,” 2001 International Conference on Solid State Device and Materials (SSDM),September 25 – 28, pp.252-253 Tokyo, Japan.
(26) Xinnan Lin, Chuguang Feng, Shengdong Zhang, Wai-Hung Ho, and Mansun Chan,”Double-Gate SOI MOSFET Fabrication from Bulk Silicon Wafer,” 2001 IEEE International SOI Conference, October 1 to 4, 2001, pp. 93-94,Sheraton Tamarron Resort, Durango, CO, U.S.A..
(27) Shengdong Zhang, Mansun Chan, Ruqi Han Xiaoyan Liu, Y.Y. Wang,”Development and Properties of Self-aligned Double-gate p-Si TFT,” The 6th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT 2001), October 22, 2001, Shanghai, China.
(28) Shengdong Zhang, Ruqi Han, Mansun Chan,”A Novel self-aligned bottom gate TFT technology,” 31st European Solid-State Device Research Conference (ESSDERC 2001).September, 2001, pp. 475-478 Nuremberg, Germany.
(29) Shengdong Zhang, Ru-qi Han, Mansun Chan, Xiao-yan Liu, Xu-dong Guan,”A Novel Sub-50 nm Poly-Si Gate Patterning Technology,” IEEE Region 10 International Conference on Electrical & Electron Technology (TENCON 2001). August, 2001, pp. 841-843, Singapore.
(30) Shengdong Zhang, Ru-qi Han, Xiao-yan Liu, Xu-dong Guan, Tin Li, and Dachen Zhang,“A Lithography Independent Gate Definition Technology for Fabricating Sub-100nm Devices,” 2001 IEEE Hong Kong Electron Device Meeting, June 30, 2001, pp. 81-84.
(31) Chunxiang Zhu, Shengdong Zhang, Sin JKO, Mok PKT,”Ultra-thin elevated channel low temperature poly-Si TFTs for fully-integrated AMLCD systems on glass,” Proceedings of the 29th European Solid-State Device Research Conference.ESSDERC’99. Editions Frontieres. 1999, pp. 708-11. Neuilly sur Seine, France.
(32) Shengdong Zhang, Kumar A, Sin JKO.”Development of Low Temperature Poly-silicon TFT with Excellent Saturation Characteristics,” Proceedings of the 18th. International Display Research Conference.Soc. Inf. Display (SID). 1998, pp.361-4. San Jose, CA, USA.
(33) Shengdong Zhang , Sin JKO.”A High-performance Bi-directional Duper-MIM Diode With Symmetrical and Shift-free I-V Characteristics,” 1998 SID International Symposium. Digest of Technical Papers. Vol. 29. Soc. Inf. Display.1998, pp.447-50. Santa Anaheim, CA, USA.
(34) Shengdong Zhang, Wang G-L, Zheng C-W, Cheng X-X., ”Development of Self-alignment Edge Junction MIM matrix for LCD,” Proceedings of Spie – the International Society for Optical Engineering SPIE-Int. Soc. Opt. Eng. vol. 2892, 1996, pp. 178-83. USA.