薄膜晶体管与先进显示重点实验室
Thin Film Transistor and Advanced Display Lab

会议论文

2020年会议论文

  1.  Yongwei Wu, Guang Yang, Zhilong Xin, Pei Jiang, Bo He, Yongming Yin, Miao Duan, Dongze Li,  Shujhih Chen, Hang Zhou, Chia-yu Lee, Shengdong Zhang, “Enhanced Charge Transportation Towards High Luminescent 2D Perovskite Light-Emitting Diodes,” 2020 International Conference On Environment Science and Advanced Energy Technologies (ESAET 2020), Jan.18-19, 2020,Chongqing, China.
  2.  Zhibin Han, Shengdong Zhang, Liuqi Zhang, Jianxin Liu, Baixiang Han,Gary Chaw, Xin Zhang,  “A Negative Pulse Goa Circuit Consisted of a-IGZO TFT”,2020 IEEE 3rd International Conference on Electronics Technology (ICET), May 8-12, 2020, Chengdu, China.
  3.  Zhibin Han, Shengdong Zhang, Xian Wang, Jianxin Liu, Baixiang Han, Gary Chaw , Xin Zhang, “A GOA Circuit Composed of a-IGZO TFT with Q-point Precharge Function,” 2020 IEEE 3rd International Conference on Electronics Technology (ICET),May 8-12, 2020, Chengdu, China.

 

2019年会议论文

  1. Taoyu Zou, Changdong Chen, Ben Xiang, Ya Wang, Chuan Liu, Shengdong Zhang, Hang Zhou, “Flexible, Active-Matrix Flat-Panel Image Sensor for Low Dose X-ray Detection Enabled by Integration of Perovskite Photodiode and Oxide Thin Film Transistor,” 2019 IEEE International Electron Devices Meeting (IEDM), Dec 12-17, 2019, p. 4, San Francisco, CA, SA.
  2.  Zhibin Han, Baixiang Han, Kuo Gao, Jianxin Liu, Xiaoling Wu,Gary Chaw, Shengdong Zhang, “The IR Drop Effect of 2T1C and 3T1C Driving Modes in Top Emission AMOLED,” 2019 IEEE International Conference on Computation, Communication and Engineering, ICCCE 2019, Nov. 8-10, 2019, pp. 242-244, Fujian, China.
  3.  Zhibin Han, Baixiang Han , Kuo Gao , Jianxin Liu , Liuqi Zhang , Gary Chaw , Shengdong Zhang, “Effect of Transparent Capacitor on the Panel Uniformity of Bottom Emission AMOLED,” 2019 IEEE International Conference on Computation, Communication and Engineering, ICCCE 2020, Nov .8-10, 2019, pp. 121-123, Fujian, China.
  4.  Letao Zhang, Hongyang Zuo, Qian Ma, Shengdong Zhang, Liangfen Zhang, Xiaoxing Zhang, Yuan Jun Hsu,“Plasma Mode Influences on the Surface Hydrophobization of Polyimide”, AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings, July 2-5, 2019, p. 4, Kyoto, Japan.
  5.  Letao Zhang, Hongyang Zuo, Qian Ma, Shengdong Zhang, “Structural, Optical and Electrical Properties of Sputtered Nb Doped TiO2 Transparent Conductive Films,” AM-FPD 2019-26th International Workshop on Active-Matrix Flatpanel Displays and Devices:TFT Technologies and FPD Materials, Proceedings, July 2-5, 2019, p. 4, Kyoto, Japan.
  6.  Hongyang Zuo,  Letao Zhang, Yukun Yang, Changhui Fan,  Shengdong Zhang, “Gate Insulator Influences on the Electrical Performance of Back-Channel-Etch Amorphous Zinc Tin Oxide (a-ZTO) Thin Film Transistors,”2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD), Proceedings, July 2-5, 2019, p. 4, Kyoto, Japan.
  7.  Qian Ma, LetaoZhang, Shengdong Zhang, “Fast Improved Thin-Film Transistors with Atomic-Layer-Deposited In2O3 Channels via O2 Plasma Treatment,”  EDSSC 2019 , June 12-14, 2019, Xi'an, China.
  8. Yan Xue , BaiXiang Han, CongWeiLiao, ShengDong Zhang, Gary Chaw, Yuan Chun Wu, “Uniformity Research of An Advanced 31-inch 4K AMOLED Display,” 2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019, June 12-14, 2019, Xi'an, China.
  9.  Yan Xue, Bai Xiang Han, CongWeiLiao, ShengDong Zhang, Gary Chaw, YuanChun Wu, “A Low Power TG a-IGZO TFT Gate Driver Circuit for AMOLED Display,”  2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019, June 12-14, 2019, Xi'an, China.
  10. Baozhu Chang , Xuan Deng, Jinao Tao, Huan Yang, Shengdong Zhang*, “Self-Aligned Top-Gate Amorphous Oxide Thin-Film Transistors with IZO/IGZO Stacked Active Layer and Al Reacted Source/Drain Region,” 2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019, June 12-14, 2019, Xi'an, China.
  11.  Letao Zhang, Qian Ma, Shengdong Zhang, “Plasma Influences on the Performance of Ti Protected Back-Channel-Etched a-IGZO TFTs,” 2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019, June 12-14, 2019, Xi'an, China.
  12.  Xinxin Huo, Wenlong Bai, Hing-Mo Lam, Congwei Liao, Min Zhang, Shengdong Zhang, Hailong Jiao, “A Compact Low-Voltage Segmented D/A Converter with Adjustable Gamma Coefficient for AMOLED Displays,”IEEE International Symposium on Circuits and Systems (ISCAS) , May 26-29, 2019, Sapporo, Japan.
  13. Yan Xue, Chun Hsiung Fang, Bai Xiang Han, Ai Guo Tu, Zhong Guo Yang, Gary Chaw, CongWei Liao, ShengDong Zhang, YuanChun Wu, PoYen Lu, “Panel Design Technology for a 31-inch GOA Drived AMOLED Display with BYYB OLED Structure and Slim Border,” SID Symposium Digest of Technical Papers, May 12-17, 2019, pp. 846-849, San Jose,USA.
  14.  Dewei Zhang, Weiling Zeng, Hesheng Lin, Tengteng Lei, Jinyuan Wen, Chenglin Li, Shengdong Zhang, Min Zhang,SID Symposium Digest of Technical Papers, May 12-17, 2019, San Jose, USA.
  15.  Ying Wang, Congwei Liao, Shengdong Zhang, “A Depletion-Mode Compatible Gate Driver on Array for a-IGZO TFT-OLED Displays,” SID Symposium Digest of Technical Papers, May 14-16, 2019, pp. 1241-1244, US.San Jose Convention Center.
  16. Lixuan Chen, Xulin Lin, Chunqiu Yan, Shengdong Zhang, Xiao Wei Sun, “Origin and Improvement of LCD Reflectivity SID Symposium Digest of Technical Papers,” May 14-16, 2019, pp. 1522-1525, US.San Jose Convention Center.
  17.  Jie Huang, Congwei Liao, Tengteng Lei, Jiwen Yang, Shengdong Zhang, “IGZO TFT Gate Driver with Independent both Bootstrapping and Control Units for AMOLED Mobile Display,” SID Symposium Digest of Technical Papers, May 14-16, 2019, pp. 1275-1278, US.San Jose Convention Center.
  18. Tengteng Lei, Congwei Liao, Jie Huang, JiWen Yang, Shengdong Zhang, “Oxide Thin Film Transistors Integrated DC-DC Converter withHigh Efficiency for Passive RFID Tag, SID Symposium Digest of Technical Papers, May 14-16, 2019, pp. 1660-1663, US.San Jose Convention Center.
  19.  Yan Xue, Bai Xiang Han, Chaw Gary, CongWei Liao, ShengDong Zhang, YuanChun Wu, “Design of Split Oxide TFT with Large Size for GOA Circuit ,” 2019 IEEE 2nd International Conference on Electronics Technology (ICET), May 10-13, 2019, pp. 200-203, Chengdu, China.
  20. Shenglei Wang, Baozhu Chang, Shengdong Zhang, “The Conductivity Modulation Of Amorphous Zinc Tin Oxide Thin Film By Aluminum (Al) Reaction Method,” 2019 International Conference on Display Technology(ICDT), Mar. 26-29, 2019, Kunshan,China.
  21.  Jinao Tao, Baozhu Chang, Shengdong Zhang, “Self-aligned Top-gate a-ZrInZnO Thin-Film Transistors Fabricated by Cosputtering Technique,” 2019 International Conference on Display Technology(ICDT), Mar. 26-29, 2019, Kunshan, China.
  22. Hao Peng, Shengdong Zhang, “Relationship Between Effective Mobility And Source/Drain Resistance In,” 2019 International Conference on Display Technology(ICDT), Mar. 26-29, 2019, Kunshan, China.
  23. Yunkai Cao, Huan Yang, Shengdong Zhang,  “Fabrication of Self-Aligned Top-Gate Amorphous InGaZnO Thin-Film Transistors with Submicron Channel Length,” 2019 International Conference on Display Technology(ICDT), Mar. 26-29, 2019, Kunshan, China.

 

2018年会议论文

  1. Xiaobin Zhou, Dedong Han, Junchen Dong, Huijin Li, Xing Zhang, Yi Wang, Wen Yu, Shengdong Zhang,“Performance Improvement of Back-Channel-Etched a-IGZO TFTs by O-2 Plasma Treatment,”  9th Inthernational Conference on Computer Aided Design for Thin-Film Transistors (CAD-TFT), Nov. 16-18, 2018, pp. 16-16, Shenzhen,  China.
  2.  Hongyu He, Yuan Liu, BinghuiYan, Xinnan Lin, Xueren Zheng, Shengdong Zhang, “Analytical Drain Current Model for Amorphous and Polycrystalline Silicon Thin-Film Transistors at Different Temperatures Considering Both Deep and Tail Trap States,” 9th Inthernational Conference on Computer Aided Design for Thin-Film Transistors (CAD-TFT), Nov. 16-18, 2018, pp. 18-19, Shenzhen, China.
  3.  Yan Xue, Baixiang Han, Yongliang Huang, Liuqi Zhang, Xian Wang, Shuai Zhou, Xiang Xiao, Gary Chaw, Congwei Liao, Shengdong Zhang , “The Design Of a 15-Inch AMOLED Display Derived By GOA,” 9th Inthernational Conference on Computer Aided Design for Thin-Film Transistors (CAD-TFT), Nov. 16-18, 2018, pp. 10-10, Shenzhen, China.
  4.  Huan Yang, Xiaoliang Zhou, Shengdong Zhang, Gongtan Li, Shan Li, “Performance Improvement of Back-Channel-Etched a-IGZO TFTs by O 2 Plasma Treatment,” 9th Inthernational Conference on Computer Aided Design for Thin-Film Transistors (CAD-TFT), Nov. 16-18, 2018, pp. 14-14,, Shenzhen, China.
  5. Tengteng Lei, Congwei Liao, Jie Huang, Ying Wang, Shengdong Zhang, “An a-InGaZnO TFT Gate Driver Circuit with Positive Feedback Effect,” 9th Inthernational Conference on Computer Aided Design for Thin-Film Transistors (CAD-TFT), Nov. 16-18, 2018, pp. 12-12, Shenzhen, China.
  6. Baixiang Han, Yan Xue, Yongliang Huang, Liuqi Zhang, Xiang Xiao, Xiaodong Zhang,Gary Chaw, Congwei Liao,  Shengdong Zhang, “Design Of a Igzo TFT-Based GOA Circuit For External Compensation Pixel Circuits,” 9th Inthernational Conference on Computer Aided Design for Thin-Film Transistors (CAD-TFT), Nov. 16-18, 2018, pp. 11-11, Shenzhen, China.
  7. Hongyang Zuo, Yukun Yang, Shengdong Zhang, “Optimization of the ZTO/GI interface of Bottom-gate Amorphous ZnSnO Thin-Film Transistor,”  9th Inthernational Conference on Computer Aided Design for Thin-Film Transistors (CAD-TFT), Nov. 16-18, 2018, pp. 7-7,Shenzhen, China.
  8. Xuan Deng ,Yuqing Zhang ,Haishi Fu, Shengdong Zhang, “High Mobility Metal-Oxide Thin Film Transistors With Igzo/In2o3 Dual-Channel Structure,” 9th Inthernational Conference on Computer Aided Design for Thin-Film Transistors (CAD-TFT), Nov. 16-18, 2018, pp. 33-35, Shenzhen, China.
  9. Changde He, Feiyan Cai, Fei Li, Wendong Zhang, Yiheng Du, Licheng Jia, Chenyang Xue, Shengdong Zhang, Hairong Zheng, “Tunable Manipulation of Microparticles by CMUT,” IEEE International Ultrasonics Symposium, IUS, Oct. 22-25, 2018, Kobe, Japan.
  10. Jixiang Wu, Shuiping Yi, Congwei Liao, Xinxin Huo, Ying Wang and Shengdong Zhang, “New AMOLED Pixel Circuit to Compensate Characteristics Variations of LTPS TFTs and Voltage Drop,” 2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) , July 3-6, 2018, p.4, Kyoto, Japan.
  11. Shuiping Yi, Jixiang Wu, Congwei Liao, Ying Wang, Xinxin Huo, Shengdong Zhang,“An a-IGZO TFT AMOLED Pixel Circuit to Compensate Threshold Voltage and Mobility Variations,” 2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD), July 3-6, 2018, pp. 23-26, Kyoto, Japan.
  12.  Yukun Yang, Huiling Lu, Shengdong Zhang, “Effects of Wavelength and Geometrical Condition on Photosensitivity of Self-Aligned Top-Gate Amorphous InZnO Thin Film Transistors,” 2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD), July 3-6, 2018, p. 4pp, Kyoto, Japan.
  13.  Shuiping Yi, Xinxin Huo, Congwei Liao, Ying Wang, Jixiang Wu, Hailong Jiao, Min Zhang, Shengdong Zhang, “An a-IGZO TFT Pixel Circuit for AMOLED Display Systems with Compensation for Mobility and Threshold Voltage Variations,”  2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC), June 6-8, 2018, p.2pp, Shenzhen, China.
  14. Zhen Luo, Dedong Han, Junchen Dong, Huijin Li, Wen Yu, Yi Liang, Shengdong Zhang, Xing Zhang, Yi Wan, “Strain Effect on Electronic Properties of Arsenene/Graphene Heterostructure,” 2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC),” June 6-8, 2018, p.2pp, Shenzhen, China.
  15.  Jixiang Wu, Ying Wang, Xinxin Huo, Shuiping Yi, Congwei Liao, Min Zhang, Shengdong Zhang,  “An AMOLED LTPS-TFT Pixel Circuit Using Mirror Structure to Compensate Vth Variation and Voltage Drop,” 2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC),” June 6-8, 2018, p.2pp, Shenzhen, China.
  16. Hongyu He, Yuan Liu, Hao Wang, Xinnan Lin, Xueren Zheng, Shengdong Zhang, “Analysis of 1/f Noise for Organic TFTs Considering Mobility Power-Law Parameter,” 2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC), June 6-8, 2018, p.2pp, Shenzhen, China.
  17. Yang Shao, Hongjuan Lu, Xiaoliang Zhou, Letao Zhang, Xiaodong Zhang, Shengdong Zhang, “Dynamic Threshold Voltage Modulation in Double-Gate Indium-Gallium-Zinc Oxide Thin-Film Transistors: Influence of the Active Layer Thickness,” 2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC),
  18. June 6-8, 2018, p.2pp, Shenzhen, China.
  19.  Letao Zhang, Xiaoliang Zhou, Hongyu He, Yang Shao, Shengdong Zhang, “Ti Film Thickness Influences on the Back Channel Etched Amorphous InGaZnO4 Thin Film Transistors,” 2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC), June 6-8, 2018, p.2pp, Shenzhen, China.
  20.  Shengdong Zhang, Yang Shao, “Technology Issues for Self-aligned Top-Gate Amorphous Metal Oxide Thin-Film Transistors,” 2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018, June 6-8, 2018, p.2pp, Shenzhen, China.
  21.  Hezi Qiu, Wengao Lu, Shengdong Zhang, Hailong Jiao, “A Low-Power Time-Interleaving Analog Adder for Externally Compensated AMOLED/Micro-LED Displays,” SID Symposium Digest of Technical Papers 2018, vol. 49, no. 1, pp. 1399-1402, 2018.
  22.  Congwei Liao, Ying Wang, Yihua Ma, Baixiang Han, Yan Xue, Liuqi Zhang, Yuying Cai, Xiaodi Liu, Kun Cao, Min Zhang, Shengdong Zhang, “Implementation Of Digital Thin-Film Transistor Integrated Ambient Light Sensor With High Reliability,” SID Symposium Digest of Technical Papers, vol. 49, no. 1, pp. 1357-1360, 2018.
  23.  Xiaodong Zhang, Xuan Deng, Huan Yang, Xiaoliang Zhou, Letao Zhang, Shengdong Zhang, “Electrical Characteristics and Stability of Double-Gate a-IGZO Thin Film Transistors with Self-Aligned Top-Gate,” SID Symposium Digest of Technical Papers 2018, May 22-25, 2018, pp. 1227-30, Los Angeles, CA, United states.
  24.  Ying Wang, Congwei Liao, Yihua Ma, Jixiang Wu, Shuiping Yi, XinxinHuo, Min Zhang, Shengdong Zhang, “Integrated a-IGZO TFT Gate Driver with ProgrammableOutput for AMOLED Display,” SID Symposium Digest of Technical Papers, May 22-25, 2018, pp. 1377-80, Los Angeles, CA, United states.
  25.  Xinxin Huo, Congwei Liao, Jixiang Wu, Shuiping Yi, Ying Wang, Hailong Jiao,Min Zhang, Shengdong Zhang,  “An OLEDoS Pixel Circuit With Extended Data Voltage Range For High Resolution Micro-Displays,” SID Symposium Digest of Technical Papers 2018, May 22-25, 2018, pp. 1373-1376, Los Angeles, CA, United states.
  26. Zhaofeng Huang, Yuze Niu, Wengao Lu, Guangyi Chen, Yi Li, Shengdong Zhang, Zhongjian Chen, “A 16-bit Single-Slope based Pixel-level ADC for 15 mu m-pitch 640x512 MWIR FPAs,” Proceedings - IEEE International Symposium on Circuits and Systems, May 27-30, 2018, Florence, Italy.
  27. Xiaoliang Zhou, Xiaodong Zhang, Yang Shao, Letao Zhang, Dedong Han, Yi Wang, ShengdongZhang,
  28. “Asymmetric Effect of Gate-Bias Stress Voltage on the Stability of a-IGZO,” 2018 SID Symposium Digest of Technical Papers, Apirl 9-12,2018, pp. 597-600, Guangzhou,China.
  29.  Huan Yang, Xiaoliang Zhou, Shengdong Zhang, “Anomalous Dependence of Threshold Voltage on channel Width and Drain Voltage In Back-Channel-Etched a-IGZO TFTs,” 2018 SID Symposium Digest of Technical Papers, Apirl 9-12, 2018, pp. 516-519, Guangzhou,China.
  30.  Yukun Yang, Huiling Lu, Shengdong Zhang, “Influence of Mg Content and Argon/Oxygen Ratio on Photoelectric properties of co-sputtering MIZO,” 2018 SID Symposium Digest of Technical Papers, Apirl 9-12, 2018, pp. 538-540, Guangzhou, China.
  31. Letao Zhang, Xiaoliang Zhou, Yang Shao, Shengdong Zhang, “Back-Channel-Etched a-IGZO TFTs with TiO2:Nb Protective Layer,” 2018 SID Symposium Digest of Technical Papers, Apirl 9-12, 2018, pp. 263-266, Guangzhou, China.
  32.  Xuan Deng, Xiaodong Zhang, Ting Liang, Xiaoliang Zhou, Shengdong Zhang, “The Influence of Dual-Channel On The Performance Of Self-Align Top-Gate Igzo Thin Film Transistors,” 2018 SID Symposium Digest of Technical Papers, Apirl 9-12, 2018, pp. 561-564, Guangzhou, China.
  33. Gang Wang, Baozhu Chang, Shenglei Wang, Shengdong Zhang, “The Conductivity Modulation of Amorphous Zinc Tin Oxide Thin Film by Ar Plasma Treatment,” 2018 SID Symposium Digest of Technical Papers, Apirl 9-12, 2018, pp. 524-527, Guangzhou, China.

 

2017年会议论文

  1. Ruibin Xie, Qiang Zhao, Yihua Ma, Fengbo Xie, Feng Lin, Shengdong Zhang, “A Power-On-Reset Circuit with Precisely Triggered Threshold Voltages International Conference on Electron Devices and Solid-State Circuits (EDSSC),” 18-20, 2017, Hsinchu, Taiwan.
  2. Qingping Lin, Letao Zhang, Shengdong Zhang, “Tio2:Nb Film Thickness Influences on the Amorphous Ingazno Thin Film Transistors with Mo/Tio2:Nb Source-Drain Electrodes International Conference on Electron Devices and Solid-State Circuits (EDSSC),”18-20, 2017, Hsinchu, Taiwan.
  3. Yang Shao,Xiaoliang Zhou, Qingping Lin, Letao Zhang, Huiling Lu, Shengdong Zhang, “ZnSnO Thin-Film Transistors by Reactive Co-Sputtering of Zn and Sn Metal Targets International Conference on Electron Devices and Solid-State Circuits (EDSSC),” 18-20, 2017, Hsinchu, Taiwan.
  4. Qiang Zhao, Ruibin Xie, Yihua Ma, Fengbo Xie, Feng Lin, Shengdong Zhang, “A 27.6MHz 297uW 33 ppm/℃CMOS Relaxation Oscillator With An Adjustable Temperature Compensation Scheme International Conference on Electron Devices and Solid-State Circuits (EDSSC),” 18-20, 2017, Hsinchu, Taiwan.
  5. Hongyu He, Yuan Liu, Binghui Yan, Xinnan Lin, Xueren Zheng, Shengdong Zhang, “Drain Current Model Based on the Meyer-Neldel Rule for Polycrystalline ZnO Thin-Film Transistors at Different Temperatures,”24th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), July 4-7,2017, Chengdu, China.
  6. Yihua Ma, Congwei Liao, Ruibin Xie, Qiang Zhao and Shengdong Zhang, “A Low-Power and High-Stable TFT Gate Driver With a Novel Bootstrap Scheme,” SID Symposium Digest of Technical Papers, May 21-26, 2017, pp.72-75, Los Angeles, United States.
  7. Ting Liang, Xiaodong Zhang, Xiaoliang Zhou, Letao Zhang, Huiling Lu, Hongjuan Lu and Shengdong Zhang,
  8. “Effects of N2O Plasma Treatment Time on the Performance of Self-Aligned Top-Gate amorphous oxide Thin Film Transistors, SID Symposium Digest of Technical Papers, May 21-26,2017, pp.1299-1302, Los Angeles, United States.
  9. Cuicui Wang, Hing-Mo Lam, Xiaolong He, Wengao Lu and Shengdong Zhang, “A High-Voltage Analog Adder Based on Class-B Amplifier for Source Driver of AMOLED External Compensation Scheme,”SID Symposium Digest of Technical Papers, May 21-26,2017, pp.1442–1445, Los Angeles, United States.
  10. Yizhe Sun, Huiren Peng, Shuming Chen and Shengdong Zhang, “Inverted Quantum Dot Light-Emitting Diodes with MgZnO Modified Electron Transport Layer,”SID Symposium Digest of Technical Papers,  May 21-26, 2017, pp.1699–1702, Los Angeles, United States.
  11. Hongjuan Lu, Letao Zhang, Xiaoliang Zhou, Xiaodong Zhang, Ting Liang and Shengdong Zhang, “The Effect of Thermal Annealing Sequence on the Performance of Self-Aligned Top-Gate a-IGZO TFTs,”SID Symposium Digest of Technical Papers, May 21-26,2017, pp.1303–1306, Los Angeles, United States.
  12. Wen Yu, Dedong Han, Junchen Dong, Yingying Cong, Shengdong Zhang, Xing Zhang and Yi Wang, “Effects of Calcium Doping on Zinc Oxide Thin Film Transistors SID Symposium Digest of Technical Papers,”May 21-26,2017, pp.1265-1268, Los Angeles, United States.
  13. Xiaoliang Zhou, Gang Wang, Yang Shao, Letao Zhang, Huiling Lu, Shuming Chen and Shengdong Zhang,  “Parylene / Al2O3 Double Layer Passivated Amorphous InGaZnO Thin-Film Transistors,”SID Symposium Digest of Technical Papers, May 21-26,2017, pp.1258–1261, Los Angeles, United States.
  14. Huiling Lu, Letao Zhang, Xiaoliang Zhou, Hang Zhou and Shengdong Zhang, “Photocurrent Characteristics of Amorphous MgInO Thin Film Transistors,”SID Symposium Digest of Technical Papers, May 21-26,2017, pp.1254–1257, Los Angeles, United States.

 

2016年会议论文

  1. Wen Yu, Dedong Han, Guodong Cui, Yingying Cong, Junchen Dong, Xing Zhang, Yi Wang, Shengdong Zhang, “High-Performance Calcium-Doped Zinc Oxide Thin-Film Transistors Fabricated on Glass at Low Temperature,” International Conference on Solid State Devices and Materials (SSDM), Sept. 27-30, 2016, Sapporo, Japan.
  2. Guodong Cui, Dedong Han, Wen Yu, Pan Shi, Yi Zhang, Shengdong Zhang, Xing Zhang, Yi Wang, “Effects of Various Oxygen Partial Pressures on Ti-Doped ZnO Thin Film Transistors Fabricated on Flexible Plastic Substrate,”
  3. International Conference on Solid State Devices and Materials (SSDM), Sept. 27-30, 2016, Sapporo, Japan.
  4. 张晓东,周晓梁,任重阳,梁婷,张盛东,“PECVD制备SiO2栅介质的硅烷分压对a-IGZO TFTs特性的影响 ,”2016中国平板显示会议,2016/9/22-2016/9/24,中国,合肥。
  5. 梁婷,周晓梁,卢红娟,张晓东,张盛东,“顶栅自对准a-IZO薄膜晶体管制备工艺研究,”2016中国平板显示会议,2016/9/22-2016/9/24, 中国,合肥。
  6. 卢慧玲,张乐陶,周航,张盛东,“非晶氧化铟镁薄膜晶体管紫外探测特性研究,” 2016中国平板显示会议,2016/9/22-2016/9/24,中国,合肥。
  7. 邵阳,周晓梁,张乐陶,卢慧玲,张盛东,“阳极氧化非铟基金属氧化物薄膜晶体管,”2016中国平板显示会议,2016/9/22-2016/9/24,中国,合肥。
  8. 王翠翠,林兴武,张盛东,“一种补偿a-IGZO TFT负阈值电压的AMOLED像素电路,”2016中国平板显示会议,2016/9/22-2016/9/24,中国,合肥。
  9. Xiaomi Zhang, Dedong Han, Yingying Cong, Junchen Dong, Guodong Cui, Shengdong Zhang, Xing Zhang, Yi Wang, “Strain Effect on Electronic Structure of La-Doped Monolayer Graphene,” 13th IEEE International Conference on Solid-State and Integrated-Circuit Technology (ICSICT), Oct. 25-28, 2016, pp.833-835, Hangzhou, China.
  10. Yukun Yang, Dedong Han, Guodong Cui, Wen Yu, Huijin Li, Junchen Dong, Xing Zhang, Yi Wang, Shengdong Zhang, “Characteristic Research of Zinc Oxide Based Thin Film Transistor By ALD Technology,” 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), Oct. 25-28, 2016, pp.1143-1145, Hangzhou, China.
  11. Huiling Lu, Ting Liang, Shengdong Zhang, “High Reliability of IGZO TFTs Using Low-Temperature Fabricated Organic Passivation Layersa,” 13th IEEE International Conference on Solid-State and Integrated-Circuit Technology (ICSICT), Oct. 25-28, 2016, pp. 638-640, Hangzhou, China.
  12. Hongyu He, Yuan Liu, Hao Wang, Xinnan Lin, Xueren Zheng, Shengdong Zhang, “Analysis of 1/f Noise for Polycrystalline Silicon TFTs Considering Mobility Power-Law Parameter,” 7th IEEE International Nanoelectronics Conference, May 7-11, 2016, Chengdu, China.
  13. Xue Meng, Cuicui Wang, Chuanli Leng, Hing-Mo Lam, Yuan-chun Wu, Min Zhang , Shengdong Zhang, “A Current Source Free Separate Frame Compensated Voltage-Programmed Active Matrix Organic Light Emitting Diode Pixel Circuit,” SID'16, May 21-27, 2016, San Francisco, USA.
  14. Zhijin Hu, Cuicui Wang, Congwei Liao, Shijie Cao, Jia Fan, Qiang Zhao, Shengdong Zhang , “TFT Integrated Gate Driver with VTH Shift Compensable Low-Level Holding Unit,” SID'16, May 21-27, 2016, pp.134-137, San Francisco, USA.
  15. Zhen Song, Guoying Wang, Xiang Xiao, Wei Deng, Shengdong Zhang, “AZO Etch Buffer Layer based Back-Channel-Etch a-IGZO TFT Technology,” SID'16, May 21-27, 2016, pp.1272-1275, San Francisco, USA.
  16. Jia Fan, Cuicui Wang, Hing-Mo Lam, Congwei Liao, Fangfang Yang, Min Zhang, Shengdong Zhang, “A High Accuracy Current Comparison Scheme for External Compensation Circiut of AMOLED Displays,” SID'16, May 21-27, 2016, pp.1261-1264, San Francisco, USA.
  17. Tianyu Zhou, Chuanli Leng, Hing-Mo Lam, Hesheng Lin, Shengdong Zhang, Min Zhang, “An Area-Efficient Segmented R-DAC Realized by Low-Voltage Transistors for AMOLED Driver ICs,” SID'16, May 21-27, 2016, pp.1257-1260, San Francisco, USA.
  18. Cuicui Wang, Chuanli Leng, Hing-Mo Lam, Zhijin Hu, Congwei Liao, Xue Meng, Jia Fan, Tianyu Zhou, Fangfang Yang, Shengdong Zhang, “A Peripheral Compensation Scheme for AMOLED with Data Voltage VTH and Aging Information Analogously Added in Pixel Circuit,” SID'16, May 21-27, 2016, pp.1250-1253, San Francisco, USA.
  19. Shijie Cao, Zhijin Hu, Congwei Liao, Cuicui Wang, Jia Fan, Min Zhang ,Shengdong Zhang, “A Low-Power ESL a-IGZO TFTs Integrated Gate Driver Circuit,” SID'16, May 21-27, 2016, San Francisco, USA.
  20. Pan Shi, Dedong Han, Wen Yu, Zhuofa Chen, Nannan Zhao, Feilong Zhao, Shengdong Zhang, Xing Zhang,“The Research of Dual-Layer Channel ITO/MZO Thin Film Transistors Fabricated on Glass at Low Temperature,”SID'16, May 21-27, 2016, San Francisco, USA.
  21. Jia Fan, Cuicui Wang, Hing-Mo Lam, Congwei Liao, Fangfang Yang, Min Zhang, Shengdong Zhang, “A High Accuracy Current Comparison Scheme for External Compensation Circuit of AMOLED Displays,” SID Symposium Digest of Technical Papers, May 22-27, San Francisco, pp. 1261-1264, 2016.
  22. Xue Meng, Cuicui Wang, Chuanli Leng, Hing-Mo Lam, Yuan-chun Wu, Min Zhang, Shengdong Zhang,“A Current Source Free Separate Frame Compensated Voltage‐Programmed Active Matrix Organic Light Emitting Diode Pixel Circuit,” SID Symposium Digest of Technical Papers, May 22-27, San Francisco, pp. 1282-1285, 2016.
  23. Cuicui Wang, Xue Meng, Hing-Mo Lam, Hongjuan Lu, Shengdong Zhang, “A New AC Biased Pixel Circuit for Active Matrix Organic Light-Emitting Diode Displays,” 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) - TFT Technologies and FPD Materials , Jul. 6-8, 2016, pp. 85-88, Kyoto, Japan.
  24. Xin Ju, Xiang Xiao, Yuxiang Xiao, Shengdong Zhang, “Estimation of Threshold Voltage Shift in a-IGZO TFTs under Different Bias Temperature Stress by Improved Stretched-Exponential Equation,” 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) - TFT Technologies and FPD Materials, Jul. 6-8, 2016, pp. 149-152, Kyoto, Japan.
  25. Chongyang Ren, Hongjuan Lu, Xiang Xiao, Wei Deng, Yuxiang Xiao, Shengdong Zhang, “Impact of Wet Etchant with Different PH Value on the Performance of Back-Channel-Etch a-IGZO Thin-Film-Transistor,” 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) - TFT Technologies and FPD Materials, Jul. 6-8, 2016, pp. 139-142, Kyoto, Japan.
  26. Yuxiang Xiao, Xiang Xiao, Letao Zhang, Xin Ju, Hongjuan Lu, Shengdong Zhang, “Oxygen Partial Pressure and Annealing Temperature Influence on the Performance of Back-Channel-Etch Zinc Tin Oxide Thin Film Transistors,”23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) - TFT Technologies and FPD Materials, Jul. 6-8, 2016, pp. 135-138, Kyoto, Japan.
  27. Hongjuan Lu, Chongyang Ren, Xiang Xiao, Yuxiang Xiao, Cuicui Wang, Shengdong Zhang, “Comparison of N2 and Ar Plasma Treatment For Source/Drain Formation in Self-Aligned Top-Gate Amorphous InGaZnO Thin Film Transistor,” 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) - TFT Technologies and FPD Materials, Jul. 6-8, 2016, pp. 131-134, Kyoto, Japan.
  28. Man Zhang, Xiang Xiao, Xin Ju, Xiaodong Zhang , Shengdong Zhang, “Characteristics of Amorphous In-Ga-Zn-O Thin-Film-Transistors with Channel Layer Deposited By Bias Sputtering,” 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) - TFT Technologies and FPD Materials, Jul. 6-8, 2016, pp. 127-130, Kyoto, Japan.
  29. Hongyu He, Wanling Deng, Yuan Liu, Xinnan Lin, Xueren Zheng, Shengdong Zhang, “Simple Leakage Current and 1/f Noise Expressions for Polycrystalline Silicon Thin-Film Transistors,” IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), Aug. 3-5 ,2016, pp. 343-345, Hong Kong,China.
  30. Fangfang Yang, Cuicui Wang, Hing-Mo Lam, Qiang Zhao, Jia Fan, Shengdong Zhang, “A Floating High-Voltage Level Shifter Used In a Pre-Charge Circuit For Large-Size AMOLED Displays,” IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), Aug. 3-5 ,2016, pp. 267-270, Hong Kong,China.

 

2015年会议论文

  1. Hsiang-Chih Hsiao, Zhi-Xionq Jiang, Chang-Yi Su, Hong-Yuan Xu, Mian Zeng, Bo Sun, Chia-Yu Lee, Hang Zhou, Shengdong Zhang, “Solution Processed P-type Top-gate Small-Molecular Organic TFT,” International Display Workshops (IDW) 2015, Dec. 9-11, 2015, pp.1022-1024, Otsu, Japan.
  2. Shengdong Zhang, Yang Shao, Xiang Xiao and Xin He, “Anodized Oxide TFT Technology,” IDMC’15, Aug.25-28, 2015, TWTC Nangang, Taiwan.
  3. Pan Shi, Dedong Han, Yi Zhang, Wen Yu, Lingling Huang, Yingying Cong, Xiaoliang Zhou, Zhuofa Chen, Junchen Dong, Shengdong Zhang, Xing Zhang, Yi Wang , “Fully-Transparent Mo-doped ZnO TFTs Fabricated in Different Oxygen Partial Pressure at Low Temperature,” AMFPD’15,  July 01-04, 2015, pp. 111-114, Kyoto, Japan.
  4. Guoying Wang, Zhen Song, Xiang Xiao and Shengdong Zhang, “Effects of Over-Etching Time on the Characteristics of Amorphous IGZO Thin-Film Transistors with Back-Channel-Etch Structure,” AMFPD’15, July 01-04, 2015, pp. 107-110,Kyoto, Japan.
  5. Pan Shi, Dedong Han, Wen Yu, Zhuofa Chen, Nannan Zhao, Feilong Zhao, Jing Wu, Junchen Dong, Yingying Cong, “The Research of Dual-Layer Channel ITO/MZO Thin Film Transistors Fabricated on Glass at Low Temperature,” SID Symposium Digest of Technical Papers, June 1-4, 2015, pp. 1176-1180,San Jose, CA, United states.
  6. Chuanli Leng, Xin He, Hing-Mo Lam, Xue Meng, Cuicui Wang, Yuan-chun Wu, Kai-Yuan Ko, Shengdong Zhang, “Row-Division Driving Scheme for Active Matrix OLED Displays,” SID Symposium Digest of Technical Papers, June 1-4, 2015, pp. 1308-1312, San Jose, CA, United states.
  7. Congwei Liao, Zhijin Hu, Junmei Li, Wenjie Li, Shijie Cao, Shengdong Zhang, “A Simple Low Temperature Workable a-Si:H TFT Integrated Gate Driver on Array,” SID Symposium Digest of Technical Papers, June 1-4, 2015, pp. 1316-1320, San Jose, CA, United states.
  8. Xin He, Ling Wang, Wei Deng, Xiang Xiao, Letao Zhang, Chuanli Leng, Mansun Chan, Shengdong Zhang, “Improved Electrical Stability of Double-Gate a-IGZO TFTs,” SID Symposium Digest of Technical Papers, June 1-4, 2015, pp. 1151-1154, San Jose, CA, United states.
  9. Nannan Zhao, Dedong Han, Zhuofa Chen, Jing Wu, Yingying Cong, Junchen Dong, Feilong Zhao, Shengdong, “High-Performance Fully Transparent Ti-Zn-O Thin Film Transistors,” 2015 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), April 27-29, 2015,pp. 1-2, Hsinchu, Taiwan.

 

2014年会议论文

  1. Jingwen Han, Lei Sun, Hao Xu, Yibo Zhang, Shengdong Zhang, Yi Wang, “Performance and Microstructureanalysis Of Vacuum Annealed Zno Thin-Film Transistors,” 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology (ICSICT), Oct. 28-31, 2014, pp.1504-1506, Guilin, China.
  2. Wei Deng, Xin He, Xiang Xiao, Ling Wang,Weizhi Meng and Shengdong Zhang, “A-IGZO thin film transistors with channel layer deposited at room temperature and 250℃,” 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology(ICSICT), Oct. 28-31, 2014, pp. 1057-1059, Guilin, China.
  3. Xin He, Xiang Xiao, Wei Deng, Longyan Wang, Ling Wang, Shipeng Chi, Yang Shao, Shengdong Zhang, “Characteristics of Double-Gate a-IGZO TFTs,” 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology(ICSICT), Oct. 28-31, 2014, pp. 648-650, Guilin, China.
  4. Wenjie Li, Congwei Liao, Xiang Xiao, Zhijin Hu, Junmei Li, Shengdong Zhang, “Lifetime Prediction of TFT Integrated Gate Drivers,” 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology(ICSICT), Oct. 28-31, 2014, pp. 1498-1500, Guilin, China.
  5. Zheyuan Chen, Xiang Xiao, Yang Shao, Weizhi Meng, Shuguang Zhang, Lunlun Yue, Lei Xie, Shengdong Zhang, “Fabrication of P-type Copper Oxide Thin-Film Transistors at Different Oxygen Partial Pressure,” 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology(ICSICT), Oct. 28-31, 2014, pp. 1501-1503, Guilin, China.
  6. Xiang Xiao, Lei Xie, Yang Shao, Xin He, Peng Zhang, Weizhi Meng, Zheyuan Chen, Wei Deng, Letao Zhang, Shengdong Zhang, “Impacts of Substrate Heating Schemes on Characteristics of Amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) TFTs  Fabricated on Flexible Substrates,” 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology(ICSICT), Oct. 28-31, 2014, pp. 1495-1497, Guilin, China.
  7. Feilong Zhao, Dedong Han, Junchen Dong, Longyan Wang, Nannan Zhao, Yingying Cong, Zhuofa Chen, Xing Zhang, Shengdong Zhang, Yi Wang, “Highly Reliable Amorphous Indium Gallium Zinc Oxide Tfts for Active Matrix Organic Light-Emitting Diode Display,” 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology (ICSICT), Oct. 28-31, 2014, pp. 1166-1168, Guilin, China.
  8. Junchen Dong, Dedong Han, Feilong Zhao, Nannan Zhao, Jing Wu, Zhuofa Chen, Yingying Cong, Shengdong Zhang, Xing Zhang, Lifeng Liu, Yi Wang, “High Negative Bias Stability Gadolinium-Doped Aluminum-Zinc-Oxide Thin Film Transistors,” 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology (ICSICT), Oct. 28-31, 2014, pp.1201-1202, Guilin, China.
  9. Nannan Zhao, Dedong Han, Zhuofa Chen, Jing Wu, Yingying Cong, Junchen Dong, Feilong Zhao, Shengdong Zhang, “Effects of Radio Frequency Power on Properties of Titanium-Doped Zinc Oxide Based TFTs,” 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology (ICSICT), Oct. 28-31, 2014, pp. 1513-1515, Guilin, China.
  10. Peng Zhang, Xiang Xiao, Ling Wang, Yang Shao, Shengdong Zhang*, “Homojunction In2O3-TFTs Prepared by Anodization Technique,” AM-FPD 2014, July 02-04, 2014, pp. 327-330, Ryukoku Univ, Kyoto, Japan.
  11. Lei Xie, Yang Shao, Xiang Xiao, Letao Zhang, Xiaobin Bi, Shengdong, Zhang, “Fabrication of Indium-Tin-Oxide Thin-Film Transistor Using Anodization, AM-FPD 2014, July 02-04, 2014, pp. 101-103, Ryukoku Univ, Kyoto, Japan.
  12. Stefan Weizhi Meng, Letao Zhang, Xiang Xiao, Shengdong Zhang, “Study on the Transition between p and n Types of SnOx Film Deposited by DC Sputtering,” AM-FPD 2014, July 02-04, 2014, pp. 105-107, Ryukoku Univ, Kyoto, Japan.
  13. Shuguang Zhang, Letao Zhang, Xiang Xiao, Shengdong Zhang, “Influence of O2 on Al-Zn-Sn-O TFTs in the Active Layer Deposition and Annealing Process,” 2014 IEEE EDSSC, June 18-20, 2014, Chengdu, China.
  14. Yuying Cai, Lisa Ling Wang, Shengdong Zhang, “A Gate-stress-induced ΔVth Model Reflecting Impact of Electric Field in IGZO Thin Film Transistors,” 2014 IEEE EDSSC, June 18-20, 2014, Chengdu, China.
  15. Yang Liu, Longyan Wang, Shengdong Zhang, “Development of Low Temperature Amorphous Tin-doped Indium Oxide Thin-Film Transistors Technology,” 2014 IEEE EDSSC, June 18-20, 2014, Chengdu, China.
  16. Junmei Li, Congwei Liao, ZhiJin Hu, Wenjie Li, Shengdong Zhang*, “A Concrete Integrated Gate Driver with Sharing Low-level-holding Structure,” 2014 IEEE EDSSC, June 18-20, 2014, Chengdu, China.
  17. Xiaobin Bi, Jianke Yao, Shengdong Zhang, “Magnesium-doped Indium Oxide Thin Film Transistors for Ultraviolet Detection,” 2014 IEEE EDSSC, June 18-20, 2014, Chengdu, China.
  18. Jing Wu, Dedong Han, Nannan Zhao, Zhuofa Chen, Yingying Cong, Feilong Zhao, Junchen Dong, ShengdongZhang, “High-Performance Fully Transparent Hafnium-Doped Zinc Oxide TFTs Fabricated at Low Temperature,” SIDInternational Symposium, June 1-6, 2014, pp. 997-1000,San Diego, CA, United states.
  19. Congwei Liao, Zhijin Hu, Wenjie Li, Junmei Li, Shengdong Zhang, “IGZO-TFT Based Latch Circuit with High Stability and Full-Swing Output for System-on-Panel,” SID International Symposium, June 1-6, 2014, pp. 1031-1034, San Diego, CA, United states.
  20. Zhijin Hu, Congwei Liao, Junmei Li, Wenjie Li, Shengdong Zhang, “A-Si:H TFT Gate Driver with Shared Dual Pull-Down Units for Large-Sized TFT-LCD Applications,” SID International Symposium, June 1-6, 2014, pp. 986-989, San Diego, CA, United states.
  21. Yingying Cong, Dedong Han, Dongfang Shan, Yu Tian, Fuqing Huang, Suoming Zhang, Zhuofa Chen, Jing Wu, Nannan Zhao, Feilong Zhao, Juncheng Dong, Shengdong Zhang, Xing Zhang, Yi Wang, “High Mobility Transparent Al-Sn-Zn-O Thin Film Transistors Fabricated at Low Temperature,” VLSI-TSA 2014, Apr. 28-30, 2014, Hsinchu, Taiwan.
  22. Dedong Han, Zhuofa Chen, Nannan Zhao, Wei Wang,Fuqing Huang, Shengdong Zhang, Xing Zhang, Yi Wang, “Flexible Aluminum-Doped Zinc-Oxide Thin-Film Transistor Fabricated on Plastic Substrates,” Annual Conference on Oxide-Based Materials and Devices V held at SPIE Photonics West, Feb. 02-05, 2014, San Francisco, CA.
  23. Longyan Wang, Yang Liu, Xin He, Yang Shao, Xiang Xiao, Shengdong Zhang, “Oxide TFT Panel with ITO as Channel Layer, Source/Drain and Pixel Electrode,” ITC2014- 10th International Thin-Film Transistor Conference, Jan. 23-24, 2014, Delft- The Netherlands.

 

2013年会议论文

  1. Shipeng Chi, Xiang Xiao, Xin He, Shengdong Zhang, “Self-Aligned Top-Gate a-IGZO Thin-Film Transistor with N2 Plasma-Treated Source/Drain Regions,” IDW 2013, Dec.3-6, 2013,pp. 379-382, Sapporo, Japan.
  2. Congwei Liao, Zhijin Hu, Chuanli Leng, Can Zheng, Shengdong Zhang, “A Charge-Cyclic Digital-to-Analog Converter for IGZO TFT Integrated Data Driver ,” SID 2013, May 20-24, 2013, pp. 999-1002, Vancouver, Canada.
  3. Chuanli Leng, Longyan Wang, Shengdong Zhang, “An AMOLED Pixel Circuit with Negative VTH Compensation,” IDW 2013, Dec.3-6, 2013, pp. 416-418, Sapporo, Japan.
  4. Zhijin Hu, Congwei Liao, Can Zheng and Shengdong Zhang, “ A High-Speed and Reliable TFT Integrated Shift Register,” 2013 IEEE International Conferrence on Electron Devices and Solid-State Circuits, June 3-5, 2013, Hong Kong, China.
  5. Fuqing Huang, Dedong Han, Dongfang Shan, Yu Tian, Suoming Zhang, Xing Zhang, Shengdong Zhang, “Room-Temperature Fabrication of Flexible Gallium-Doped Zinc Oxide Thin-Film Transistors on Plastic Substrates,” 2013 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC), June 3-5, 2013, Hong Kong, China.
  6. Dongfang Shan, Dedong Han, Fuqing Huang, Yu Tian, Suoming Zhang, Xing Zhang, Shengdong Zhang, “Fabrication and Characteristics of Fully Transparent Aluminum-Doped Zinc Oxide Thin-Film Transistors,” IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC), June 3-5, 2013, Hong Kong, China.
  7. Suoming Zhang, Dedong Han,Xing Zhang, Shengdong Zhang, Yi Wang, “Fabrication Optimization to Improve Performance of Gallium-Doped Zinc Oxide Thin Film Transistors,” 20th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) - TFT Technologies and FPD Materials, July 02-05, 2013, pp. 121-124, Kyoto, Japan.
  8. Suoming Zhang , Yu Tian, Dedong Han, Dongfang Shan, Shengdong Zhang, Yi Wang, “High-Performance Fully Transparent Ga-Doped ZnO TFTs Fabricated by RF Magnetron Sputtering,” International Symposium on VLSI Technology, Systems, and Applications (VLSI-TSA), Apr. 22-24, 2013, Hsinchu, Taiwan.
  9. Changwei Zheng, Shengdong Zhang, “Boron Doped ZnO Thin Films and TFTs Fabricated By Magnetron Sputtering,” Proceedings of China Display/Asia Display 2013, Mar. 20-21, 2013, Shanghai, China.
  10. Jianke Yao, Shengdong Zhang, “The Ultraviolet Photo Detecting Properties of a-IGZO TFTs,” Proceedings of China Display/Asia Display 2013, Mar. 20-21, 2013, Shanghai, China.
  11. Xin He, Longyan Wang, Shaojuan Li, Mansun Chan and Shengdong Zhang, “Implementation of Multi-threshold Voltage a-IGZO TFTs with Oxygen Plasma ,” SSDM 2013, Sep. 24-28, 2013, pp. 192-193, Fukuoka.

 

2012年会议论文

  1. Jian Cai, Dedong Han, Youfeng Geng, Wei Wang, Liangliang Wang, Yu Tian, Huikun Yao, Lixun Qian, Shengdong Zhang*,Yi Wang, “High-Performance Transparent Top-Gate AZO TFTs Fabricated by Low-Temperature Process,” The 2012 International Conference on Solid State Devices and Materials (SSDM 2012), Sep. 25-27, 2012, Japan.
  2. Youfeng Geng, Dedong Han, Jian Cai, Wei Wang, Liangliang Wang, Huikun Yao, Yicheng Ren, Yi Wang, Shengdong Zhang, “High Performance Dual-layer Channel ZnO Thin-Film Transistor,” The 2012 International Conference on Solid State Devices and Materials (SSDM2012), Sep. 25-27, 2012, Japan.
  3. Ruhai Fu, Congwei Liao, Chuanli Leng, Shengdong Zhang, “An IGZO TFT Based In-Cell Capacitance Touch Sensor,” 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology , Oct. 29 - Nov.1, 2012, pp. 1187-1189, Xi'an, China.
  4. Tony C. Liu, James B. Kuo, Shengdong Zhang*, “Grain-Boundary Impact Ionization-Induced Current Hump Effects,” IEDMS 2012, Nov. 29-30, 2012, Taiwan.
  5. Chuanli Leng, Congwei Liao, Longyan Wang, Shengdong Zhang, “An a-IGZO TFT Pixel Circuit for AMOLED with Simultaneous VT Compensation,” IEEE International Conference on Solid-State, Oct. 29-Nov. 1, 2012, Xi'an, China.
  6. Can Zheng, Congwei Liao, Jianhua Li and Shengdong Zhang, “Design of Driving Transistor in a-Si:H TFT Gate Driver Circuit,” IEEE EDSSC 2012, Dec.3-5, 2012, Bangkok, Thailand.
  7. Lisa L. Wang, James B. Kuo and Shengdong Zhang, “Modeling Hot-Carrier-Induced Reliability of Poly-Silicon Thin Film Transistors,” IEEE EDSSC 2012, Dec.3-5, 2012, Bangkok, Thailand.
  8. Xia Li, Shuo Sun, Jian Suo, Shengdong Zhang, FujiaZhang, “XRD Analysize PTCDA Film Evaporatived on P-Si (110) Substrate,” 2012 Symposium on Photonics and Optoelectronics (SOPO 2012), May 21-23, 2012, Shanghai, China.
  9. Wei Wang, Dedong Han, Jian Cai, Youfeng Geng, Liangliang Wang, Yu Tian, Yi Wang,  “Fully Transparent AZO Thin-film Transistors Fabricated on Flexible Plastic Substrates at Room Temperature,” The 2012 International Conference on Solid State Devices and Materials (SSDM2012), Sep. 25-27, 2012, Japan.
  10. Tony C. Liu, James B. Kuo and Shengdong Zhang, “Channel Length-Dependent Parasitic Bipolar Transistor Effect in Poly-Si TFTs Considering Traps at Grain Boundary ,” IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT), Oct.29 - Nov.1, 2012, pp. 1193-1195, Xi'an, China.
  11. Wei Wang, Dedong Han, Jian Cai, Youfeng Geng, Liangliang Wang, Yicheng Ren, Hao Deng, Yi Wang, Shengdiong Zhang, “Al-Doped ZnO Thin-Film Transistors on Flexible Plastic Substrates,” AM-FPD 2012, July 4-6, 2012, pp. 175-178, Kyoto, Japan.
  12. Xia Li, Junhao Chu, Longxia Li, Ning Dai, Shengdong Zhang, “Fabrication and Characterization of Room Temperature Nuclear Radiation CdZnTe 3×3 Pixel Array Detector,” 2012 Symposium on Photonics and Optoelectronics (SOPO 2012), May 21-23, 2012, Shanghai, China.
  13. Wei Deng, Xin He, Xiang Xiao and Shengdong Zhang, “Comparative Study of a-IGZO TFTs Deposited by RF and DC Sputtering,” EDSSC2012, Dec.3-5, 2012, Bangkok, Thailand.
  14. Shaojuan Li, Xin He, Dedong Han, Yi Wang, Lei Sun, Shengdong Zhang, “Enhanced Performance of ZnO Thin-Film Transistors with ZnO Dual-Active-Layer,” IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT), Oct. 29-Nov. 01, 2012, pp. 1190-1192, Xian, China.

 

2011年会议论文

  1. Huajie Luo, Shengdong Zhang, Peng Jin, “Optimization of Trichromatic Color Temperature Tunable White Light LEDs,” 2011 International Conference on Electronics and Optoelectronics, Proceedings, July 29-31, 2011, pp. 3287-3290, Dalian, China.
  2. Xia Li, Shengdong Zhang, Fujia Zhang, Jing Wang, Haoli Zhang, “Fabrication Technology and Characterization of PTCDA/p-Si Photo-Electronic Detector,” 2011 Symposium on Photonics and Optoelectronics, May 16-18, 2011, pp. 123-126, Wuhan, China.
  3. Shaojuan Li, Dedong Han, Lei Sun, Yi Wang, Ruqi Han and Shengdong Zhang, “High Performance RF Sputtering Deposited ZnO Thin-Film Transistors,” Conference of China Display / Asia Display 2011,  Nov. 07-09, 2011, pp. 393-396, Kunshan, China.
  4. Jianke Yao, Shengdong Zhang, “Effects of Channel Composition and Gate Dielectrics on The Stability of a-IGZO TFTs,” Conference of China Display / Asia Display 2011, Nov. 07-09, 2011, pp. 373-376, Kunshan, China.
  5. Yicheng Ren, Dedong Han, Lei Sun, Gang Du, Shengdong Zhang, “Performance of Asynchronous Double-gate Poly-Si Thin-film Transistors, Conference of China Display / Asia Display 2011, Nov. 07-09, 2011, pp. 552-555, Kunshan, China.
  6. Congwei Liao, Xiaoming Liu, Tao Chen, David Dai, Smart Chung, T. S. Jen and Shengdong Zhang, “Data Signal Induced Feed-through Effects in Integrated a-Si:H Gate Driver,” Conference of China Display / Asia Display 2011, Nov. 07-09, 2011, pp. 389-392, Kunshan, China.
  7. Xin He, Shaojuan Li, Xin Lin, Beibei Jiang,Yunlu Li, Shengdong Zhang The Source/Drain Resistance of a-IGZO TFT Conference of China Display / Asia Display 2011 Nov. 07-09, 2011, pp. 540-543, Kunshan, China
  8. Xiaoming Liu, Congwei Liao, Tao Chen, David Dai, Smart Chung, T. S. Jen and Shengdong Zhang, “Hybrid Driving Scheme of a-Si TFT pixel circuit for AMOLEDs,” Conference of China Display / Asia Display 2011, Nov. 07-09, 2011, pp. 208-211, Kunshan, China.
  9. Tao Chen, Congwei Liao, Xiaoming Liu, David Dai, Smart Chung, T. S. Jen and Shengdong Zhang,  “A Compact Integrated Hydrogenated Amorphous Silicon Gate Driver for TFT- LCD ,” Conference of China Display / Asia Display 2011, Nov. 07-09, 2011, pp. 530-533, Kunshan, China.
  10. Chunyu Yu, Lingli Kong, Junju Zhang, Shengdong Zhang, “The X-Ray Imaging System's Requirements for CCD Pixel,” International Symposium on Photoelectronic Detection and Imaging 2011 - Advances in Imaging Detectors and Applications, May 24-26, 2011, Beijing,China.
  11. Chunyu Yu, Lingli Kong, Junju Zhang, Shengdong Zhang, “3D Information Extraction Based on a Novel X-Ray Imaging System,” International Symposium on Photoelectronic Detection and Imaging 2011: Advances in Imaging Detector, May 24-26, 2011, Beijing,China.
  12. Chunyu Yu, Lingli Kong, Junju Zhang, Shengdong Zhang, “The Low Light Level Image Intensifier’s Application in X Ray Imaging,” International Symposium on Photoelectronic Detection and Imaging 2011 - Advances in Imaging Detectors and Applications, May 24-26, 2011, Beijing, China.
  13. Xin Lin, Beibei Jiang, Xin He, Shaojuan Li, Yunlu Li, Shengdong Zhang, “High Performance Zn1-xMgxO TFTs for Ultraviolet Image Sensors,” IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC), Nov.17-18, 2011, Tianjin, China.
  14. Xin Lin, Beibei Jiang, Shaojuan Li, Yunlu Li, Xin He, Shengdong Zhang, “Reactive DC Magnetron Sputtering Deposited ZnMgO Transparent Thin-Film Transistors,” Conference of China Display / Asia Display 2011, Nov. 07-09, 2011, pp. 568-571, Kunshan, China.
  15. Beibei Jiang, Xin Lin, Shaojuan Li, Xin He, Yunlu Li, Shengdong Zhang, “Structural, Electrical and Optical Properties of Zn1-xMgxO Films Prepared Reactive DC Sputtering,” Conference of China Display / Asia Display 2011, Nov. 07-09, 2011, pp. 556-559, Kunshan, China.
  16. Chunyu Yu, Lingli Kong, Junju Zhang, Shengdong Zhang, “Light Decreases Through the X-Ray Imaging Chain,” International Symposium on Photoelectronic Detection and Imaging 2011: Advances in Imaging Detector, May 24-26, 2011, Beijing,China.

 

2010年会议论文

  1. Congwei Liao, Longyan Wang, Changde He, Yinan Liang, David Dai, Smart Chung,T. S. Jen, and Shengdong, “A Fast Integrated a-Si Gate Driver,” 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), Nov. 1-4,2010, pp. 1438-1440, Shanghai, China.
  2. Longyan Wang, Congwei Liao, Yinan Liang, Shengdong Zhang, “A New Four-Transistor Poly-Si TFT Pixel Circuit for AMOLED,” 2010 11th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), Nov. 1-4,2010, pp. 1453-1455, Shanghai, China.
  3. Linfeng Du, Shengdong Zhang, “RDF Effect Induced by Source/Drain Doping in Nano-Scale UTB SOI MOSFET with Nominally Un-doped Channel ,” EDSSC 2010, Dec. 15-17,2010, pp. 125-128, Hong Kong, China.
  4. Linfeng Du, Shengdong Zhang, “Source/Drain Doping Induced Vth Variation in Nano-scale UTB SOI MOSFET” 2010 International Conference on Solid State Device and Materials (SSDM), September 22 -24, 2010, pp. 188-190, Tokyo, Japan.
  5. Changde He, Congwei Liao, Yinan Liang, and Shengdong Zhang, “A New Integrated Gate Driver with Shift Register Circuits Employing 4 Clocks for 14.1-inch TFT-LCD,” 2010 International Conference on Electrical and Control Engineering (ICECE 2010), June 25-27, 2010, pp. 149-152, Wuhan, China.

 

2009年及以前会议论文

  1. Changde He, Congwei Liao, Yinan Liang and Shengdong Zhang,“Integrated a-Si:H TFT Gate driver for 14.1-inch WXGA TFT-LCD”,Digest of Technical Papers, ASID’09, pp. 63-66..
  2. Congwei Liao, Changde He, Yinan Liang and Shengdong Zhang,“A New Integrated a-Si:H TFT Gate Driver with Q Node quasi-Grounded”,Digest of Technical Papers, ASID’09, pp. 55-58..
  3. Yinan Liang, Congwei Liao, Changde He, and Shengdong Zhang,“Error Current Effects in Current-Programmed Pixel Circuits For AMOLED”,Digest of Technical Papers, ASID’09, pp. 152-156..
  4. Shao-Juan Li1, Lei Sun1, Yi Wang1, Ruqi Han1 and Shengdong Zhang,“Reactive Sputtered Deposition and Etched Patterning of ZnO Films for Active Matrix Flate Panel Display (AM FPD),” Digest of Technical Papers, ASID’09, pp. 286-289..
  5. Congwei Liao, Shengdong Zhang,“A Novel Super-Halo Doping Concept for Nanoscale CMOS Technology,” ECS Transactions, Vol.18(1), ISTC/CSTIS 2009 (CISTC), pp. 111-116..
  6. Linfeng Du, Hui Deng, Gang Du and Shengdong Zhang,“Characteristic Variations Induced by Random Fluctuation of Source/Drain Lateral Distribution Dopant in Nano-Scale UTB SOI MOSFET,” ECS Transactions, Vol.18(1), ISTC/CSTIS 2009 (CISTC) , pp. 77-81..
  7. Dedong Han, Yi Wang, Shengdong Zhang, Lei Sun and Ruqi Han,”Fabrication and Characteristics of ZnO-based Thin Film Transistors,” The 9th International Conference on Solid-State and Integrated-Circuit Technology Oct. 20~23, pp. 982-984, 2008..
  8. Xu Han, Dingyu Li, Chengen Yang and Shengdong Zhang,”A Simple Nano-Scale Patterning Technology for FinFET Fabrication,” The 9th International Conference on Solid-State and Integrated-Circuit Technology Oct. 20~23, pp. 184-186, 2008..
  9. M. Chan, Shengdong Zhang, X. Lin, X. Wu, and P. C. H. Chan (invited),”3-Dimensional Integration for Interconnect Reduction in for Nano-CMOS Technologies,” IEEE Tencon, November 23, 2006, Hong Kong..
  10. Wei Ke, Xu Han, Dingyu Li, Xiaoyan Liu, Ruqi Han, and Shengdong Zhang,”Recessed Source/Drian for Scaling SOI MOSFET to the Limit,” The 8th International Conference on Solid-State and Integrated-Circuit Technology Oct. 23~26, pp. 84-86, 2006..
  11. Ji Cao, Dingyu Li, Wei Ke, Lei Sun, Ruqi Han, and Shengdong Zhang,”T-Shaped Body Silicon-on-Insulator (SOI) MOSFET,” The 8th International Conference on Solid-State and Integrated-Circuit Technology pp. 1293-1295, Oct. 23~26, 2006..
  12. Wei Ke, Shengdong Zhang, X. Liu, and Ruqi Han,”Soruce/Drain Resistance of UTB SOI MOSFET,” Proceedings of 2005 IEEE Conference on Electron Devices and Solid-State Circuits December 19-21, 2005, pp. 405-408, Hong Kong..
  13. Dingyu Li, We Ke, L. Sun, Ruqi Han, and Shengdong Zhang,”A MOS Transistor with Source/Drain on Insulator and Channel Doped in Step-Function Profile,” Proceedings of 2005 IEEE Conference on Electron Devices and Solid-State Circuits December 19-21, 2005, pp. 683-686, Hong Kong..
  14. X. Wu, P. C. Chan, Shengdong Zhang, and Mansun Chan,”A Capped Trimming Hard-Mask Patterning Technique for Integration of Nano-Devices and Conventional Integrated Circuits,” Proceedings of 2005 IEEE Conference on Electron Devices and Solid-State Circuits December 19-21, 2005, pp. 781-784, Hong Kong..
  15. Philip C.H. Chan, Xusheng Wu, Shengdong Zhang, Chuguang Feng, Mansun Chan,“Three-Dimensional Stacked-Fin-CMOS Integrated Circuit Using Double Layer SOI Material,” The 7th International Conference on Solid-State and Integrated-Circuit Technology Oct. 19~21, 2004..
  16. (16).Wei Ke, Shengdong Zhang, Xiaoyan Liu and Ruqi Han, “Scalability and Parasitic Effect of UTB SOI MOSFETs with Raised S/Dand Sunk S/D,” The 7th International Conference on Solid-State and Integrated-Circuit Technology Oct. 19~21, 2004..
  17. Dingyu Li, Lei Sun, Zhiliang Xia, Shengdong Zhang, Xiaoyan Liu, Jinfeng Kang, Ruqi Han,”Novel Schottky Barrier MOSFET with Dual-layer Silicide Source/Drain Structure,” The 7th International Conference on Solid-State and Integrated-Circuit Technology  Oct. 19~21, 2004..
  18. Shengdong Zhang, Xinnan Lin, Ruqi Han, Xusheng Wu and Mansun Chan,”Vertical SOI CMOS Technology with p-MOSFET on SOI Film and n-MOSFET on bulk base,” 2004 International Conference on Solid State Device and Materials (SSDM),September 14 – 27, pp. 770-771, Tokyo, Japan..
  19. Zhikuan Zhang, Shengdong Zhang and Mansun Chan, “Self-Aligned Recessed Source/Drain Ultra-Thin Body SOI MOSFET Technology,” Proceedings of the 34th European Solid-State Device Research Conference (ESSDERC 2004)September 21-23, 2004, pp. 301-304, Leuven, Belgium..
  20. Z. Zhang, Shengdong Zhang, C. Feng, and M. Chan,”A Study of Source/Drain-On-Insulator Structure for Extremely Scaled MOSFETs,” 62nd Device Research Conference Digest, pp. 115-116, June 21-23, 2004, U.S.A...
  21. X. Wu, Shengdong Zhang, M. Chan, and P. Chan,”Design of Sub-50nm Ultrathin-Body (UTB) SOI MOSFETs with Raised S/D,” Proceedings of 2003 IEEE Conference on Electron Devices and Solid-State Circuits December 16-18, 2003, pp. 327-330, Hong Kong..
  22. Shengdong Zhang, Ruqi Han, Zhikuan Zhang, Xinnan Lin, Ping K. Ko and Mansun Chan, ”A Viable Self-aligned Bottom-Gate MOSFET Technology for High Density and Low Voltage SRAM,” 32st European Solid-State Device Research Conference (ESSDERC 2001) September, 2002..
  23. Jagar Singh, Shengdong Zhang, and Mansun Chan,”A Unified Predictive TFT Model with Capability for Statistical Simulation,” 2001 International Semiconductor Device Research Symposium, December 5-7, 2001,Holiday Inn Georgetown 2001 Wisconsin Avenue, N.W. Washington, D. C..
  24. Shengdong Zhang, Ruqi Han, Johnny K. O. Sin, and Mansun Chan,”A Self-Aligned Double-Gate Polysilicon TFT Technology”,2001 International Semiconductor Device Research Symposium, December5-7, 2001,Holiday Inn Georgetown 2001 Wisconsin Avenue, N.W. Washington, D. C..
  25. Xinnan Lin, Chuguang Feng, Shengdong Zhang, Wai-Hung Ho, and Mansun Chan,“A Simple Method to Fabricate Double-Gate SOI MOSFET with Diffusion Layer on Bulk Silicon Wafer as the Bottom,” 2001 International Conference on Solid State Device and Materials (SSDM),September 25 – 28, pp.252-253 Tokyo, Japan..
  26. Xinnan Lin, Chuguang Feng, Shengdong Zhang, Wai-Hung Ho, and Mansun Chan,”Double-Gate SOI MOSFET Fabrication from Bulk Silicon Wafer,” 2001 IEEE International SOI Conference, October 1 to 4, 2001, pp. 93-94,Sheraton Tamarron Resort, Durango, CO, U.S.A...
  27. Shengdong Zhang, Mansun Chan, Ruqi Han Xiaoyan Liu, Y.Y. Wang,”Development and Properties of Self-aligned Double-gate p-Si TFT,” The 6th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT 2001), October 22, 2001, Shanghai, China..
  28. Shengdong Zhang, Ruqi Han, Mansun Chan,”A Novel self-aligned bottom gate TFT technology,” 31st European Solid-State Device Research Conference (ESSDERC 2001).September, 2001, pp. 475-478 Nuremberg, Germany..
  29. Shengdong Zhang, Ru-qi Han, Mansun Chan, Xiao-yan Liu, Xu-dong Guan,”A Novel Sub-50 nm Poly-Si Gate Patterning Technology,” IEEE Region 10 International Conference on Electrical & Electron Technology (TENCON 2001). August, 2001, pp. 841-843, Singapore..
  30. Shengdong Zhang, Ru-qi Han, Xiao-yan Liu, Xu-dong Guan, Tin Li, and Dachen Zhang,“A Lithography Independent Gate Definition Technology for Fabricating Sub-100nm Devices,” 2001 IEEE Hong Kong Electron Device Meeting, June 30, 2001, pp. 81-84..
  31. Chunxiang Zhu, Shengdong Zhang, Sin JKO, Mok PKT,”Ultra-thin elevated channel low temperature poly-Si TFTs for fully-integrated AMLCD systems on glass,” Proceedings of the 29th European Solid-State Device Research Conference.ESSDERC’99. Editions Frontieres. 1999, pp. 708-11. Neuilly sur Seine, France..
  32. Shengdong Zhang, Kumar A, Sin JKO.”Development of Low Temperature Poly-silicon TFT with Excellent Saturation Characteristics,” Proceedings of the 18th. International Display Research Conference.Soc. Inf. Display (SID). 1998, pp.361-4. San Jose, CA, USA..
  33. Shengdong Zhang , Sin JKO.”A High-performance Bi-directional Duper-MIM Diode With Symmetrical and Shift-free I-V Characteristics,” 1998 SID International Symposium. Digest of Technical Papers. Vol. 29. Soc. Inf. Display.1998, pp.447-50. Santa Anaheim, CA, USA..
  34. Shengdong Zhang, Wang G-L, Zheng C-W, Cheng X-X., ”Development of Self-alignment Edge Junction MIM matrix for LCD,” Proceedings of Spie – the International Society for Optical Engineering SPIE-Int. Soc. Opt. Eng. vol. 2892, 1996, pp. 178-83. USA..