薄膜晶体管与先进显示重点实验室
Thin Film Transistor and Advanced Display Lab

  • 专著

    (1) 《三维结构MOS晶体管技术研究》 高等教育出版社  2005

2018年期刊论文

(1) Hing-Mo Lam ; Ying Wang ; Min Zhang ; Hailong Jiao ; Shengdong Zhang, "A Compact Pixel Circuit for Externally Compensated AMOLED Displays", Journal of the electron devices society, Vol. 6, pp. 936 - 941, Aug., 2018.
(2)  Huiling Lu; Xiaoliang Zhou; Ting Liang; Letao Zhang; Shengdong Zhang, “Nonlinear photocurrent-intensity behavior of amorphous InZnO thin film transistors”, Appl. Phys. Lett., Vol. 112, No. 4, pp.  042103, Feb., 2018.
(3)  Ting Liang; Yang Shao; Huiling Lu; Xiaoliang Zhou; Xuan Deng; Shengdong Zhang, “Scalability and Stability Enhancement in Self-Aligned Top-Gate Indium- Zinc-Oxide TFTs With Al Reacted Source/Drain”, Journal of the electron devices society, Vol. 6, pp. 680-684, June, 2018.

2017年期刊论文

(1)  Huiling Lu, Xiaoliang Zhou, Ting Liang, Letao Zhang, and Shengdong Zhang, “Oxide Thin-Film Transistors With IMO and IGZO Stacked Active Layers for UV Detection,” Journal of the electron devices society, Vol. 5, No. 6, pp.  504-508, 24 October, 2017.
(2)   Letao Zhang, Xiaoliang Zhou, Baozhu Chang, Longyan Wang, Yuxiang Xiao, Hongyu He, Shengdong Zhang, “Source-drain resistance characteristics of back-channel etched amorphous InGaZnO thin film transistors with TiO2:Nb protective layer,” Materials Science in Semiconductor Processing, 68 (2017) 147-151.
(3)  Hongyu He,  Yuan Liu, Binghui Yan, Xinnan Lin, Xueren Zheng, and Shengdong Zhang, " Analytical Drain Current Model for Amorphous
InGaZnO Thin-Film Transistors at Different Temperatures Considering Both Deep and Tail Trap States," IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 64, NO. 9, SEPTEMBER 2017.
(4)  Xiaoliang Zhou, Yang Shao, Letao Zhang, Huiling Lu, Hongyu He, Dedong Han, Yi Wang, and Shengdong Zhang, " Oxygen Interstitial Creation in a-IGZO Thin-Film Transistors Under Positive Gate-Bias Stress,"  IEEE ELECTRON DEVICE LETTERS, VOL. 38, NO. 9, SEPTEMBER 2017.
(5)  Yizhe Sun, Yibin Jiang, Huiren Peng, Jiangliu Wei, Shengdong Zhang and Shuming Chen,  "Efficient quantum dot light-emitting diodes with a Zn0.85Mg0.15O interfacial modification layer,"  Nanoscale,  Vol. 9, No. 26, pp. 8962–8969,  14 July 2017.  
(6)  Wen Yu, Dedong Han, Junchen Dong, Yingying Cong, Guodong Cui, Yi Wang, and Shengdong Zhang, " AZO Thin Film Transistor Performance Enhancement by Capping an Aluminum Layer,"  IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 64, NO. 5, MAY 2017 .
(7) Cong, YY; Han, DD; Dong, JC; Zhang, SD; Zhang, X; Wang, Y, "Fully transparent high performance thin film transistors with bilayer ITO/Al-Sn-Zn-O channel structures fabricated on glass substrate," SCIENTIFIC REPORTSVOL. 7, 1947, MAY 2017 .
(8)  Wang, LY; Sun, Y; Zhang, XT; Zhang, LN; Zhang, SD; Chan, MS, "Tunneling contact IGZO TFTs with reduced saturation voltages," APPLIED PHYSICS LETTERSVOL. 110, No. 15, April 2017 .
(9)  Du, SN; Li, GT; Cao, XH; Wang, Y; Lu, HL; Zhang, SD; Liu, CA; Zhou, H, "Oxide Semiconductor Phototransistor with Organolead Trihalide Perovskite Light Absorber," ADVANCED ELECTRONIC MATERIALSVOL. 3, No. 4, April 2017 .
(10)   Xiaoliang Zhou, Yang Shao, Letao Zhang, Xiang Xiao, Dedong Han, Yi Wang, and Shengdong Zhang, "Oxygen Adsorption Effect of Amorphous InGaZnO Thin-Film Transistors," IEEE ELECTRON DEVICE LETTERS, vol. 38, no. 4, APRIL 2017.
(11) Cui, GD; Han, DD; Dong, JC; Cong, YY; Zhang, XM; Li, HJ; Yu, W; Zhang, SD  ; Zhang, X; Wang, Y, "Effects of channel structure consisting of ZnO/Al2O3 multilayers on thin-film transistors fabricated by atomic layer deposition," JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 56, no. 4, APRIL 2017.
(12)  Li, HJ; Han, DD; Liu, LQ; Dong, JC; Cui, GD; Zhang, SD; Zhang, X; Wang, Y , "Bi-layer Channel AZO/ZnO Thin Film Transistors Fabricated by Atomic Layer Deposition Technique," NANOSCALE RESEARCH LETTERS, vol. 12,  APRIL 2017.
(13)  Cui, GD; Han, DD; Cong, YY; Dong, JC; Yu, W; Zhang, SD;Zhang, X;Wang, Y, "High-Performance Ti-Doped Zinc Oxide TFTs With Double-Layer Gate Dielectric Fabricated at Low Temperature," IEEE ELECTRON DEVICE LETTERS, vol. 38, No. 2, pp. 207-209, Feb. 2017.
(14)  Letao Zhang, Xiaoliang Zhou, Huan Yang, Hongyu He, Longyan Wang, Min Zhang, and Shengdong Zhang, “Nb Doped TiO2 Protected Back-Channel-Etched Amorphous InGaZnO Thin Film Transistors,” IEEE Electron Device Letters, vol. 38, no. 2, FEB 2017.

2016年期刊论文

(1)  Yan Wang, Raymond Fullon, Muharrem Acerce, Christopher E. Petoukhoff, Jieun Yang, Chenggan Chen, Songnan Du, Sin Ki Lai, Shu Ping Lau, Damien Voiry, Deirdre O’Carroll, Gautam Gupta, Aditya D. Mohite, Shengdong Zhang, Hang Zhou, and Manish Chhowalla,“Solution-Processed MoS2/Organolead Trihalide Perovskite Photodetectors,”  Advanced materials, Nov. 2016.
(2) Wang, Cuicui; Hu, Zhijin; He, Xin; Liao, Congwei; *Zhang, Shengdong, "One Gate Diode-Connected Dual-Gate a-IGZO TFT Driven Pixel Circuit for Active Matrix Organic Light-Emitting Diode Displays," IEEE Transactions on Electron Devices, vol. 63, no. 9, pp 3800-3803, 2016/9.
(3) Letao Zhang, Xiang Xiao, Xiaoliang Zhou, Hongyu He, Xin Xu, Qingping Lin, Hang Zhou, and Shengdong Zhang, “Structure and stoichiometry evolution of sputtered Nb doped TiO2 films induced by O2 pressure variation during postannealing process,” Journal of Vacuum Science & Technology A, vol. 34, no. 5, 051512, Sep. 2016.
(4) You Yu, Xiang Xiao (共同一作), Yaokang Zhang, Kan Li, Casey Yan, Xiaoling Wei, Lina Chen, Hongyu Zhen, Hang Zhou, Shengdong Zhang, Zijian Zheng, “Photo-reactive and metal-platable copolymer inks for high-throughput, room-temperature printing of flexible metal electrodes for thin-film electronics,” Advanced Materials, vol. 28, no. 24, pp. 4926-4934,2016.
(5) Wei Deng, Xiang Xiao, Yang Shao, Zhen Song, Chia-Yu Lee, Alan Lien, and Shengdong Zhang, "A Back-Channel-Etched Amorphous InGaZnO Thin-Film Transistor Technology With Al-Doped ZnO as Source/Drain and Pixel Electrodes," IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 63, no. 5, pp. 2205-2209, 2016.
(6) Xiang Liu , Hehe Hu, Ce Ning, Guangliang Shang, Wei Yang, Ke Wang, Xinhong Lu, Woobong Lee, Gang Wang, Jianshe Xue, Jung mok Jun, Shengdong Zhang,“Investigation into sand mura effects of a-IGZO TFT LCDs,” MICROELECTRONICS RELIABILITY, vol. 63, pp. 148-151, AUG 2016.
(7) Yong Le, Yang Shao, Xiang Xiao, Xin Xu, and Shengdong Zhang, "Indium-Tin-Oxide Thin-Film Transistors With In Situ Anodized Ta2O5 Passivation Layer," IEEE ELECTRON DEVICE LETTERS, vol. 37, no. 5, pp. 603-606, 2016.
(8) Yan Wang, Zhonggao Xia, Songnan Du, Fang Yuan, Zigang Li, Shengdong Zhang and Hang Zhou, "Solution-processed photodetectors based on organic-inorganic hybrid perovskite and nanocrystalline graphite," NANOTECHNOLOGY, vol. 27, no. 17, 2016.
(9) Wen Yu, Dedong Han, Guodong Cui, Yingying Cong,Junchen Dong,Xing Zhang,Yi Wang, and Shengdong Zhang, "High-performance calcium-doped zinc oxide thin-film transistors fabricated on glass at low temperature," JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 55, no. 4, SI, 2016.
(10) Guodong Cui, Dedong Han, Wen Yu, Pan Shi, Yi Zhang, Shengdong Zhang, Xing Zhang, and Yi Wang, "Effects of various oxygen partial pressures on Ti-doped ZnO thin film transistors fabricated on flexible plastic substrate," JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 55, no. 4, SI, 2016.
(11)  Xin Xu, Letao Zhang, Yang Shao, Zheyuan Chen, Yong Le, and Shengdong Zhang, "Amorphous Indium Tin Oxide Thin-Film Transistors Fabricated by Cosputtering Technique," IEEE TRANSACTIONS ON ELECTRON DEVICES,  vol. 63, no. 3, pp. 1072-1077, 2016.
(12)  Yi Zhang, Dedong Han, Lingling Huang, Junchen Dong,Xing Zhang, Shengdong Zhang, Yi Wang, "Sn-doped ZnO thin-film transistors with AZO, TZO and Al heterojunction source/drain contacts," ELECTRONICS LETTERS, vol. 52, no. 4, pp. 302-303, 2016.
(13)  Yingying Cong, Dedong Han, Xiaoliang Zhou, Shengdong Zhang, Xing Zhang, and Yi Wang, "High-Performance Al-Sn-Zn-O Thin-Film Transistor With a Quasi-Double-Channel Structure," IEEE ELECTRON DEVICE LETTERS,  vol. 37, no. 1, pp. 53-56, 2016.
(14) Cong, Yingying; *Han, Dedong; Dong, Junchen; Yu, Wen; Zhang, Xiaomi; Cui, Guodong; Zhang, Xing; Zhang, Shengdong; Wang, Yi, "High-performance fully transparent Al-Sn-Zn-O thin-film transistors using double-channel structures ,"Electronics Letters, vol. 52, No. 12, pp. 1069-1070, 2016.

2015年期刊论文

(1)  Huiling Lu, Xiaobin Bi, Shengdong Zhang,Hang Zhou, "Ultraviolet detecting properties of amorphous MgInO thin film phototransistors," Semiconductor Science and Technology, vol. 30, no. 12, DEC 2015.
(2)  Wei Deng, Xiang Xiao, Xin He, Chia-Yu Lee, and Shengdong Zhang, “Comparative Study of a-IGZO TFTs with Direct Current (DC) and Radio Frequency (RF) Sputtered Channel Layers,” Journal of Society of Information Display, vol. 23, no. 7, 2015.
(3)  Zhuofa Chen, Dedong Han, Jing Wu, Nannan Zhao, Yingying Cong, Feilong Zhao, Junchen Dong, Shengdong Zhang, Xing Zhang, Yi Wang, "Performance improvement of tin-doped zinc oxide thin-film transistor by novel channel modulation layer of indium tin oxide/tin  zinc oxide," Japanese Journal of Applied Physics, vol. 54, no. 4, 2015.
(4)  Zhijing Hu, Lisa Ling Wang, Congwei Liao, Limei Zeng, Chang-Yeh Lee, A. Lien and Shengdong Zhang ‘Threshold Voltage Shift Effect of a-Si:H TFTs Under Bipolar Pulse Bias,”  IEEE Trans. on Electron Devices, vol. 62, no. 12, 2015.
(5)  Zhijing Hu, Congwei Liao, Wenjie Li, Limei Zeng, Chang-Yeh Lee and Shengdong Zhang, “Integrated a-Si:H Gate Driver with Low-level Holding TFTs Biased under Bipolar Pulses,” IEEE Trans. on Electron Devices, vol. 62, no. 12, 2015.
(6)  Hongyu He,  X. Zheng, and Shengdong Zhang, “Above-Threshold 1/f Noise Expression for Amorphous InGaZnO TFTs Considering Series Resistance Noise,” IEEE Electron Device Letters, vol. 36, no. 11, pp.1056-1059, 2015.
(7)  L. L. Wang, H.Y. He, X. Liu, W. Deng, Shengdong Zhang, “Charge Trapping Model for Temporal Threshold Voltage Shift in a-IGZO TFTs Considering Variations of Carrier Density in Channel and Electric Field in Gate Insulator,” IEEE Trans. on Electron Devices, vol. 62, no. 7, pp., 2015.
(8) Yang Shao, Xiang Xiao, Xin He, Wei Deng, and Shengdong Zhang, “Low Voltage a-InGaZnO Thin-Film Transistors with Anodized Thin HfO2 Gate Dielectric,” IEEE Electron Device Letters, vol. 36, no.6, pp. 573 - 575, 2015.
(9)  W Yu, DD Han, P Shi, YY Cong, Y Zhang, JC Dong, XL Zhou, LL Huang, GD Cui, Shengdong Zhang, X Zhang and Y Wang, "Effects of substrate temperature on performance of calcium-doped zinc oxide TFTs", Electronics Letters,  vol. 51, no.16, pp. 1286-1287, 2015.
(10) Xiang Liu, Lisa Ling Wang, Hehe Hu, Xinhong Lu, Ke Wang, Gang Wang, and Shengdong Zhang, "Performance and Stability Improvements of BackChannel-Etched Amorphous Indium–Gallium–Zinc Thin-Film-Transistors by CF4+O2 Plasma Treatment," IEEE Electron Device Letters, vol. 36, no. 9, pp. 911-913, 2015.
(11)  Cuicui Wang, Chuanli Leng, Longyan Wang, Wengao Lu, and Shengdong Zhang, "An Accurate and Fast Current-Biased Voltage-Programmed AMOLED Pixel Circuit With OLED Biased in AC Mode," JOURNAL OF DISPLAY TECHNOLOGY, vol. 11, no. 7, pp. 615-619, 2015.
(12)  LongYan Wang, Lei Sun, Dedong Han, Yi Wang, ManSun Chan, Shengdong Zhang, “Self-aligned offset gate poly-Si TFTs using photoresist trimming technology,” SCIENCE CHINA Information Sciences, Vol. 58 No. 03, 2015.
(13)  LL Huang, DD Han, P Shi, YY Cong, Y Zhang, JC Dong, XL Zhou, W Yu, GD Cui, Shengdong Zhang, X Zhang and Y Wang, "High mobility transparent flexible nickel-doped zinc oxide thin-film transistors with small subthreshold swing", Electronics Letters, Vol. 51 No. 20, 2015.
(14)  Nannan Zhao Dedong Han,  Zhuofa Chen, Jing Wu, Yingying Cong, Junchen Dong, Feilong Zhao, Shengdong Zhang, Xing Zhang, Yi Wang, "High-performance fully transparent Ti-Zn-O thin film transistors", Electronics Letters, vol. 51, no. 14, pp. 1069-1071, 2015.
(15) Arman Ahnood, Hang Zhou, Y. Suzuki, R. Sliz, T. Fabritius, Arokia Nathan5 and G. A. J. Amaratung, "Orthogonal Thin Film Photovoltaics on Vertical Nanostructures," Nanoscale Research Letters, vol. 10, DEC 16 2015.
(16)  Zhuofa Chen, Dedong Han, Nannan Zhao, Yingying Cong, Jing Wu, Junchen Dong, Feilong Zhao, Lingling Huang, Yi Zhang, Guodong Cui, Lifeng Liu, Shengdong Zhang, Xing Zhang, Yi Wang, “Performance enhancement of fully transparent tin-doped zinc oxide thin-film transistors fabricated by sputtering at low temperature,” Electronics Letters, vol. 51, no. 3, pp. 272 – 274, 23 Jan 2015.
(17)  Hongyu He, Xueren Zheng and Shengdong Zhang, “1/f Noise Expressions for Amorphous InGaZnO TFTs Considering Mobility Power-Law Parameter in Above-Threshold Regime,” IEEE Electron Device Letters, vol. 36, no.2, pp. 156 - 158, 2015.
(18)  Congwei Liao, Zhijin Hu, D. Dai, S. Chung, T.S. Jen, and Shengdong Zhang, “A Compact Bi-Direction Scannable a-Si:H TFT Gate Driver,” IEEE/OSA  Journal of  Display Technology, vol.10, no. 1, pp. 1-3, 2015.
(19)  Nannan Zhao, Dedong Han, Zhuofa Chen, Jing Wu, Yingying Cong, Junchen Dong, Feilong Zhao, Shengdong Zhang, Xing Zhang, and Yi Wang, “High Performance Ti-Doped ZnO TFTs With AZO/TZO Heterojunction S/D Contacts,” IEEE/OSA  Journal of  Display Technology, vol. 10, no. 5, pp. 412 - 416, 2015.
(20)  Xiang Xiao, Yang Shao, Xin He, Wei Deng, Letao Zhang and Shengdong Zhang, “Back Channel Anodization Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors Process,” IEEE Electron Device Letters, vol. 36, no.4, pp. 357 - 359, 2015.
(21)  Wu J, Han DD, Cong YY, Zhao  NN, Chen ZF, Dong JC, Zhao FL, Shengdong Zhang, Liu LF, Zhang, X, “Effects of channel thickness on characteristics of HZO-TFTs fabricated at low temperature,” Electronics Letters, vol. 51, no.11, pp., 28 May 2015.
(22)  Jianhua Li, Jian Wang, Letao Zhang, and Shengdong Zhang, “Nanocrystalline SnO2 thin films prepared by anodization of sputtered Sn thin films,” J. Vac. Sci. Technol. A 33, 031508 (2015).
(23)  Yan Wang, Zhonggao Xia, Jun Liang, Xinwei Wang, Yiming Liu,Chuan Liu, Shengdong Zhang,Hang Zhou, "Towards printed perovskite solar cells with cuprous oxide hole transporting layers: a theoretical design," Semiconductor Science and Technology, vol. 30, no. 5, 2015.
(24)  Xiao Du, Yan Wang, Zhonggao Xia, Hang Zhou, "Perovskite CH 3NH 3PbI 3 Heterojunction Solar Cells via Ultrasonic Spray Deposition," Applied Mechanics and Materials, no. 39-43, 2015.
(25)  Zhenjun Li, Xiaoxia Yang, Feng He, Bing Bai, Hang Zhou, Chi Li, Qing Dai, "High current field emission from individual nonlinear resistor ballasted carbon nanotube cluster," Carbon, vol. 89, pp. 1-7, 2015.
(26)  Xiaoxia Yang,Zhenjun Li,Feng He,Mingju Liu,Bing Bai,Wei Liu,Xiaohui Qiu,Hang Zhou,Chi Li,Qing Dai, "Enhanced Field Emission from a Carbon Nanotube Array Coated with a Hexagonal Boron Nitride Thin Film," Small, vol. 11, no. 30, pp. 3710-3716, 2015.
(27)  Qian Li*, Xiaoqi Duan, “Effect of a weak CW trigger on optical rogue waves in the femtosecond supercontinuum generation,” Opt. Express, 23, 16364-16371 (2015) .
(28)  Qian Li*,Hui Huang,“Effective Pulse Compression in Dispersion Decreasing and Nonlinearity Increasing Fibers,”Opt. Commun. 342,26-43 (2015) .

2014年期刊论文

(1) X. He, X. Xiao, Y. Shao, W. Deng, C. Leng, and Shengdong Zhang, “A Multi-Vt a-IGZO TFT Technology Using Anodization to Selectively Reduce Oxygen Vacancy Concentration in Channel Regions,” IEEE Electron Device Letters, vol. 35, no.12, pp. 1248 - 1250, 2014.
(2) X. Liu, L. L. Wang, C. Ning, H. Hu, W. Yang, K. Wang S. Y. Yoo, and Shengdong Zhang, “Gate Bias Stress-Induced Threshold Voltage Shift Effect of a-IGZO TFTs with Cu Gate,” IEEE Trans. on Electron Devices, vol. 61, no. 12, pp. 4299 -4304, 2014.
(3) Liang Jun, Su YanTao, Lin Qinxian, Zhou Hang, Shengdong Zhang, Pei Yanli, Hu RuiQin, “Forming-free resistive switching memory based on LiFePO4 nano-particle embedded in conjugated polymer,” Semiconductor Science and Technology, vol. 29, no. 11, Nov. 2014.
(4) Xin He, Longyan Wang, Xiang Xiao, Wei Deng, Letao Zhang, Mansun Chan, and Shengdong Zhang, "Implementation of Fully Self-Aligned Homojunction Double-Gate a-IGZO TFTs," IEEE Electron Device Letters, vol. 35, no. 9, pp. 927-929, Sep. 2014.
(5) Zhuofa Chen, Dedong Han, Nannan Zhao, Yingying Cong, Jing Wu, Lingling Huang, Junchen Dong, Feilong Zhao, Lifeng Liu, Shengdong Zhang, Xing Zhang, Yi Wang, “High-performance full transparent tin-doped zinc oxide thin-film transistors fabricated on glass at low temperatures,” Electronics Letters, vol. 50, no. 20, p. 1463-1464, 25 Sept. 2014.
(6) Chuanli Leng, Cuicui Wang, Longyan Wang, and Shengdong Zhang, "Separate Frame Compensated Current-Biased Voltage-Programmed Active Matrix Organic Light-Emitting Diode Pixel," IEEE Electron Device Letters, vol. 35, no. 8, pp. 847-849, Aug. 2014.
(7) Yang Shao, Xiang Xiao, Longyan Wang, Yang Liu, and Shengdong Zhang, “Anodized ITO Thin-Film Transistors,” Advanced Functional Materials, vol. 24, no. 26, pp. 4170–4175, July 9, 2014.
(8) Lisa Ling Wang, Tony Chi Liu, Yuying Cai, and Shengdong Zhang, "Thin-Film Transistor Vth Shift Model Based on Kinetics of Electron Transfer in Gate Dielectric," IEEE Trans. on Electron Devices, vol. 61, no. 5, pp. 1436-1443, May 2014.
(9) Longyan Wang, Lei Sun, Dedong Han, Yi Wang, Mansun Chan, and Shengdong Zhang, "A Hybrid a-Si and Poly-Si TFTs Technology for AMOLED Pixel Circuits," Journal of Display Technology, vol. 10, no. 4, pp. 317-320, Apr. 2014.
(9) Zhuofa Chen, Dedong Han, Nannan Zhao, Yingying Cong, Jing Wu, Junchen Dong, Feilong Zhao, Lifeng Liu, Shengdong Zhang, Xing Zhang, Yi Wang, “High-performance Dual-layer Channel ITO/TZO TFTs Fabricated on Glass Substrate”, Electronics Letters, vol. 50, no. 8, pp. 633–635, Apr. 2014.
(10) Dongfang Shan, Dedong Han, Fuqing Huang, Yu Tian, Suoming Zhang, Lin Qi, Yingying Cong, Shengdong Zhang, Xing Zhang, and Yi Wang, “Fabrication and Characteristics of High-performance and High-stability Aluminum-doped Zinc oxide Thin-Film Transistors,” Jpn. J. Appl. Phys. 53 04EJ07, 2014.
(11) Yu Tian, Dedong Han, Suoming Zhang, Fuqing Huang, Dongfang Shan, Yingying Cong, Jian Cai, Liangliang Wang, Shengdong ZhangXing Zhang, “High-performance Dual-layer Channel Indium Gallium Zinc Oxide Thin-film Transistors Fabricated in Fifferent Oxygen Contents at Low Temperature,” Jpn. J. Appl. Phys. 53 04EF07, 2014.
(12) Y. Q. Xia, Lei Sun, Hao Xu, Jing-Wen Han, Yi-Bo, Zhang, Yi Wang, and Shengdong Zhang, “Magnetic Properties of Co-Doped TiO2 Films Grown on TiN Buffered Silicon Substrates,” Chinese Physics Letters, Vol.31, 027501: 1-4, no.2, 2014.
(13) Liu Xiang, Zhang Shengdong, Xue Jianshe, Ning Ce, Yang Jing, WangGang “Improvement of Indium Gallium Zinc Oxide Thin Film Transistor with Etch-Stop Layer of Bottom-Gate,” Chinese Journal of Vacuum Science and Technology. Vol.34, no. 2, pp.130-133, 2014.
(14) Qian Li, K. Nakkeeran, P. K. A. Wai, “Ultrashort pulse train generation using nonlinear optical fibers with exponentially decreasing dispersion,” J. Opt. Soc. Am. B 31, pp. 1786-1792, 2014.

2013年期刊论文

(1) Xiang Xiao, Wei Deng, Sshipeng Chi, Yang Shao, Xin He, Ling Wang, and Shengdong Zhang, “Effect of O2 Flow Rate During Channel Layer Deposition on Negative Gate Bias Stress-Induced Vth Shift of a-IGZO TFTs,” IEEE Trans. on Electron Devices, vol. 60, no. 12, pp. 4159-4164, 2013.
(2) Chuanli Leng, Longyan Wang, and Shengdong Zhang, “Two-Transistor Current-Biased Voltage-Programmed AM-OLED Pixel,” IEEE Electron Device Letters, vol. 34, no. 10, pp. 1262-1264, 2013.
(3) Xiang Xiao, Wei Deng, Xin He, and Shengdong Zhang, “a-IGZO TFTs With Inductively Coupled Plasma Chemical Vapor Deposited SiOx Gate Dielectric,” IEEE Trans. on Electron Devices, vol. 60, no. 8, pp. 2687-2690, 2013.
(4) Jian Cai, Dedong Han, Youfeng Geng, Wei Wang, Ling Wang, Shengdong Zhang, and Yi Wang, “High-Performance Transparent AZO TFTs Fabricated on Glass Substrate,” IEEE Trans. on Electron Devices, vol. 60, no. 7, pp. 2432-2435, 2013.
(5) Dedong Han, Wei Wang, Jian Cai, Liangliang Wang, Yicheng Ren, Yi Wang and Shengdong Zhang,“ Flexible Thin-Film Transistors on Plastic Substrate at Room Temperature,” Journal of Nanoscience and Nanotechnology, vol. 13, no. 7, pp. 5154-5157, 2013.
(6) Wei Wang, Dedong Han, Jian Cai, Youfeng Geng, Liangliang Wang, Yu Tian, Xing Zhang, Yi Wang, and Shengdong Zhang, “Fully Transparent Al-Doped ZnO Thin-Film Transistors on Flexible Plastic Substrates,” Jpn. J. Appl. Phys. 52 (2013) 04CF10. Apr. 2013.
(7) Lisa L. Wang, James B. Kuo, and Shengdong Zhang, “Analytical Drain Current Model for Poly-Si Thin-Film Transistors Biased in Strong Inversion Considering Degradation of Tail States at Grain Boundary,” IEEE Trans. on Electron Devices, vol. 60, no. 3, pp. 1122-1127, 2013.
(8) Ji Chen,Kebo He,Zhaoyu Zhang*, "Triangle defects in bowtie nanoantennas,” Appl Phys A, vol. 112, no. 3, pp. 591-596, 2013.
(9) Congwei Liao, Changde He, Tao Chen, David Dai, Smart Chung, T. S. Jen, and Shengdong Zhang,“Design of Integrated Amorphous-Silicon Thin-Film Transistor Gate Driver,”Journal of Display Technology, vol. 9, no. 1, 2013.
(10) Jianke Yao, Li Gong, Lei Xie, and Shengdong Zhang, “Comparison of the electrical and optical properties of direct current and radio frequency sputtered amorphous indium gallium zinc oxide films,” Thin Solid Films, vol. 527, pp. 21-25, Jan. 2013.
(11) Jian Cai, Dedong Han, Youfeng Geng, Wei Wang, Liangliang Wang, Yu Tian, Lixun Qian, Xing Zhang, and Shengdong Zhang, and Yi Wang,” Effect of O2 Incorporation During the Channel Fabrication Process on Aluminum-Doped Zinc Oxide Thin-Film Transistor Characteristics,” Jpn. J. Appl. Phys. Vol. 52, 04CF11, 2013.
(12) Qian Li, J. Nathan Kutz, and P. K. A. Wai, “High-degree pulse compression and high-coherence supercontinuum generation in a convex dispersion profile,” Opt. Commun. pp. 301-302, 2013.
(13) Yucui Wu, Xinnan Lin, Min Zhang, “Carbon Nanotubes for Thin Film Transistor: Fabrication, Properties and Applications,” Journal of Nanomaterials, vol. 2013, Article ID 627215.

2012年期刊论文

(1) Tony.C. Liu, James B. Kuo and Shengdong Zhang,“A closed-form analytical transient response model for on-chip distortionless interconnect,” IEEE Trans. Electron Devices, 59(12), pp. 3186-3192, Dec. 2012.
(2) Shaojuan Li, Y. Cai, Dedong Han, Yi Wang, Lei Sun, Mansun Chan, and  Shengdong Zhang, “Low-Temperature ZnO TFTs Fabricated by Reactive Sputtering of Metallic Zinc Target,” IEEE Trans. on Electron Devices, vol. 59, pp. 2555-2558, no. 9, 2012.
(3) Jianke Yao, Shengdong Zhang, Li Gong,“Band offsets in ZrO2/InGaZnO4 heterojunction,“ Applied physics letter, vol. 101, no. 9, pp. 56-60, 2012.
(4) Congwei Liao, Changde He, Tao Chen, T.S.Jan and Shengdong Zhang, “Implementation of an a-Si:H TFT Gate Driver Using a Five-Transistor Integrated Approach,” IEEE Trans. on Electron Devices, vol. 59, pp. 2142-2148, no. 8, 2012.
(5) Tony C. Liu, James B. Kuo and Shengdong Zhang, “Floating-Body Kink-Effect-Related Parasitic Bipolar Transistor Behavior in Poly-Si TFT,” IEEE Electron Device Letters, Vol.33 , no.6. , pp. 842 – 844, Jun. 2012.
(6) Tony.C Liu, James B. Kuo and Shengdong Zhang,“Floating-body kink-effect-related parasitic bipolar transistor behavior in Poly-Si TFT,“ IEEE Electron Device Lett, vol. 33, no.6, pp. 842-844, 2012.
(7) Dedong Han, Yi Wang, Lei Sun,Ruqi Han, Matsumoto, Shengdong Zhang, Satoru,Ino, Yuji,“Fabrication and characteristics of ZnO thin films deposited by RF sputtering on plastic substrates for flexible display,” Science China Information Sciences, vol. 55, no. 5, pp. 1441-1445, 2012.
(8) Shaojuan Li,Xin He, Dedong Han,Lei Sun,Yi Wang, Ruqi Han,Mansun Chan, and Shengdong Zhang, “Reactive Radiofrequency Sputtering-Deposited Nanocrystalline ZnO Thin-Film Transistors,” Chinese Physics Letters, Vol. 29, no.1, 2012.

2011年期刊论文

(1) Dedong Han,Yi Wang, Shengdong Zhang,Lei Sun,Ruqi Han, Matsumoto S., Ino Y., “Influence of sputtering power on properties of ZnO thin films fabricated by RF sputtering in room temperature,” Science China-Information Sciences, 2011.54: doi: 10.1007/s11432-011- 4347.
(2) Dapeng Zhou, Mingxiang Wang, Shengdong Zhang, “Degradation of Amorphous Silicon Thin Film Transistors Under Negative Gate Bias Stress,” IEEE Trans. on Electron Devices, vol. 58, no. 10, pp. 3422-3427, 2011.

2010年期刊论文

(1) Dedong Han, Yi Wang, Shengdong Zhang,Li Sun,Jinfeng Kang,Xiaoyan Liu,G.Du,Lifeng Liu,Ruqi Han,“Fabrication and characteristics of ZnO Zhang MOS capacitors with high-K HfO2 gate dielectrics,” Science China-Technological Sciences, 2010. 53(9) p.2333.
(2) Wei Liu, Wei Li, Peng Ren, Qinglong Lin, Shengdong Zhang and Yangyuan Wang, “An 11-Bit and 39 ps Resolution Time-to-Digital Converter for ADPLL in Digital Television,” International Journal of Electronics, to appear in Mar. 2010.
(3) Wei Liu, Wei  Li, Peng Ren, Chinglong Lin, Shengdong Zhang and Yangyuan Wang, “A PVT Tolerant 10 to 500 MHz All-Digital Phase-Locked Loop with Coupled TDC and DCO,” IEEE Journal of Solid-State Circuits, vol. 45, pp. 314-321, no. 2, 2010.

2009年及以前期刊论文

(1) Wei Liu, Wei Li, Peng Ren, Qinglong Lin, Shengdong Zhang and Yangyuan Wang, “A time-domain digitally controlled oscillator composed of a free running ring oscillator and flying-adder,”  Chinese journal of Semiconductor, vol. 30, no.9, 2009.
(2) Wei Ke, Xu Han, Dingyu Li, X. Wang, T. Zhang, Ruqi Han and Shengdong Zhang, “Recessed source/drain for Sub-50 nm UTB SOI MOSFET,” Semiconductor Science and Technology, vol. 22, no. 5,  pp. 577 -583, 2007.
(3) D.Y. Li, Lei Sun, Shengdong Zhang, et al.,“Schottky barrier MOSFET structure with silicide source/drain on buried metal,” CHINESE PHYSICS 16 (1): 240-244 JAN 2007.
(4) Wei Ke, Xu Han, B. Xu, X. Liu, X. Wang, T. Zhang, R. Han and Shengdong Zhang, “Source/drain series resistances of nanoscale ultra-thin-body SOI MOSFETs with undoped or very-low-doped channel regions,” Semiconductor Science and Technology, vol. 21, no. 10,  pp. 1416-1421, 2006.
(5) L. Sun , D. Y. Li, Shengdong Zhang, Xiaoyan Liu, Yi Wang and Ruqi Han,“A planar asymmetric Schottky barrier source/drain structure for nano-scale MOSFETs,” Semiconductor Science and Technology, vol. 21, no. 5, pp. 608-611, 2006.
(6) Xin Lin, Shengdong Zhang, X. Wu and Mansun Chan, “Local Clustering 3-D Stacked CMOS Technology for Interconnect Loading Reduction,” IEEE Trans. on Electron Devices, vol. 53, pp. 1405-1410, no. 6, 2006.
(7) X. Wu, P. C. H. Chan, Shengdong Zhang C. Feng, and M. Chan,“A Three-Dimensional Stacked Fin-CMOS Technology for High-Density ULSI Circuits”,IEEE Trans. on Electron Devices, vol. 52, pp. 1998-2003, no. 9, 2005.
(8) X. Wu, P. C. H. Chan, Shengdong Zhang, C. Feng, and M. Chan, “Stacked 3-D Fin-CMOS Technology,” IEEE Electron Device Letters, Vol. 26, No. 6, pp. 416-418, June 2005.
(9) X. Lin, C. Feng, Shengdong Zhang, W.-H. Ho and M. Chan, “Characterization of double gate MOSFETs fabricated by a simple method on a recrystallized silicon film,” Solid-State Electronics, Vol. 48, No. 12, pp. 2315-2319, December 2004.
(10) Z. Zhang, Shengdong Zhang and M. Chan, “Self-Align Recessed Source Drain Ultra-thin Body SOI MOSFET,” IEEE Electron Device Letters, Vol. 25, No. 11, pp. 740 – 742, 2004.
(11) Shengdong Zhang, Ruqi Han, X. Lin, X. Wu, and M. Chan, “A Stacked CMOS Technology on SOI Substrate,” IEEE Electron Device Letters, Vol. 25, No. 9, pp. 661-663, 2004.
(12) Z. Zhang, Shengdong Zhang, C. Feng, M. Chan, “Analysis and Optimization of SDOI Structure to Maximize the Intrinsic Performance o Extremely Scaled MOSFETs,” IEEE Trans. on Electron Devices, vol.51, pp. 1095-1100, no. 7, 2004.
(13) Shengdong Zhang, Ruqi Han, and Mansun Chan,“A Self-Aligned gate-all-Around MOS transistor on Single Grain Silicon,” Electrochemical and Solid-State Letters,vol. 7, no. 4, pp. G59-G61, 2004.
(14) Zhikuan Zhang, Shengdong Zhang, Chuguang Feng and Mansun Chan, “An elevated source/drain-on-insulator structure to maximize the intrinsic performance   extremely scaled MOSFETs,” Solid-State Electronics, vol. 47, no. 10, pp. 1829-1833, 2003.
(15) Shengdong Zhang, Ruqi Han, Xinnan Lin and Mansun Chan, “An Electrically separable self-aligned double-gate MOS for dynamic threshold voltage application,” IEEE Tran. on Electron Devices, vol.50, no.11, pp. 2297-2300, 2003.
(16) Shengdong Zhang, Allain Chan, Ruqi Han, and Mansun Chan, “A Viable Self-Aligned Bottom-Gate MOS Transistor Technology for Deep Sub-Micron 3-D SRAM,” IEEE Trans. on Electron Devices, vol.50, pp. 1952-1960, no. 9, 2003.
(17) Shengdong Zhang, Ruqi Han, Zhikuan Zhang, Ru Huang, Ping K. Ko, and Mansun Chan, “Implementation of Fully Self-aligned Bottom-gate MOS Transistor,” IEEE Electron Device Letters, vol. 23, no. 10, 2002, pp. 618-620.
(18) Shengdong Zhang, Ruqi Han, Johnny K.O. Sin and Mansun Chan, “Reduction of off-current in self-aligned double-gate TFT with mask-free symmetric LDD,” IEEE Trans. on Electron Devices, August 2002, vol. 49, no. 8, pp. 1490-1492.
(19) S. Jagar, C. F. Cheng, Shengdong. Zhang, H. Wang, M. C. Poon, C. W. Kok, and M. Chan, “A SPICE Model for Thin-Film Transistors Fabricated on Grain-Enhanced Polysilicon Film,” IEEE Trans. on Electron Devices, Vol. 50, No. 4, pp. 1103-1108, April 2003.
(20) Shengdong Zhang, R. Han, J. K. O. Sin, and M. Chan,“Implementation and Characterization of Self-Aligned Double-Gate TFT with Thin Channe and Thick Source/Drain”,IEEE Trans. on Electron Devices, May 2002, Vol. 49, No. 5, pp. 718-724.
(21) Shengdong Zhang, Ruqi Han, Mansun Chan,“A Novel Self-Aligned Double Gate TFT Technology,” IEEE Electron Device Letters, vol. 22, no. 11, pp. 530-532, June 2001 .
(22) Shengdong Zhang, Ruqi Han, Mansun Chan, “A Novel Self-Aligned Bottom Gate TFT with in situ LDD,” IEEE Electron Device Letters, vol. 22, no. 8, June 2001 pp. 393-395.
(23) Shengdong Zhang, Chunxiang Zhu, Sin JKO, Li JN and Mok PKT, “Ultra-thin elevated channel poly-Si TFT technology for fully-integrated AMLCD system on glass,” IEEE Trans. on Electron Devices, vol. 47, no. 3, March 2000, pp. 569-75.
(24) Shengdong Zhang, Chunxiang Zhu, Sin JKO and Mok PKT, “A novel ultrathin elevated channel low-temperature poly-Si TFT,” IEEE Electron Device Letters, vol. 20, no. 11, Nov. 1999, pp.569-71.
(25) Shengdong Zhang, Sin JKO, Lai TML and Ko PK, “Numerical modeling of linear doping profiles for high-voltage thin-film SOI devices,” IEEE Trans. on Electron Devices, vol. 46, no. 5, 1999, pp.1036-41.
(26) Zhang Shengdong, Sin JKO,“A novel self-aligned bidirectional MIM diode with transparent junctions for AM-LCD’s”,IEEE Electron Device Letters, vol.19, no.6, pp. 192-194, June 1998.
(27) Shengdong Zhang, Han Ruqi, Liu Xiaoyan, Guan Xudong, Li Ting and Zhang Dachen, “ A novel sub-50 nm p-Si gate patterning technology,” Bandaoti Xubao/Chinese journal of Semiconductor, vol. 22, no. 5, 2001.
(28) 张盛东,韩汝琦等,“漂移区为线形掺杂的高压薄膜SOI器件的研制”,电子学报,Vol. 20, No. 2, 2001.
(29) Shengdong Zhang, Han Ruqi, Guan Xudong, “Ultra-thin Channel Poly-Si TFT Technology,” Bandaoti Xubao/ Chinese journal of Semiconductor, no. 4, 2000.
(30) Shengdong Zhang, “An investigation on level shift characteristics for pixel electrode voltage of a-Si TFT LCD,” Acta Electronica Sinica, vol. 22, no. 8, Aug. 1994, pp. 59-64.