Professor Osamu Goto
BIOGRAPHY
Professor Osamu Goto is received BC, MC, and Ph.D of Electrical Engineering from Hokkaido University in Japan in 1989, 1991, and 1994, respectively. Hokkaido University is called “Hokudai”, which means “Beida” in Chinese.Therefore, he moved to Beida in China from Beida in Japan.After receiving Ph.D, he joined in OKI Electric Industries in 1994, and moved to Sony in 2000. His research activities were focusing on crystal growth by metal-organic chemical vapor deposition (MOCVD) and device fabrication of III-V and III-Nitride compound semiconductors including laser diodes (LDs), light emitting diodes (LEDs), solar cells (SCs), and high-electron mobility transistors (HEMTs). In Sony, he had an experience of basic research, R&D, and technology transfer as a project leader from R&Dtomanufacturing group.He received the title “Distinguished Engineer” from 2006-2008, and contributed to Sony Corporationby directly reporting to Sony CEO about the next generation device concepts.In 2009, he challenged completely new field, “organic electronics”, according to a strong request by Sony.In 2012, Sony funded a scholarship for him and he joined in Prof. ZhenanBao’s lab in Stanford University as a visiting scholar. In 2014, he worked for US company as a technology consultant, and then started to work for Peking University Shenzhen Graduate School as a professor on December 1, 2014. Papers are more than 40, and patents are 67 (51 issued).
Research area:
1. Organic single-crystal growth: Equipment design, new method, growth mechanism
2. Materials characterization
3. Device fabrication and characterization: Laser diode (LD), Light emitting diode (LED), Photovoltaic (PV), Thin-film transistor (TFT)
HONORS and AWARDS
2009 Implemented Invention Award 1st Prize, Sony Corporation
JP Patent No. 3739381, “Semiconductor Light Emitting Device and Its Manufacturing Method”
2009 Implemented Invention Award 3rd Prize, Sony Corporation
US Patent No. 7339195, “Semiconductor Light Emitting Device, Its Manufacturing Method, Semiconductor Deviceand Its Manufacturing Method”
US Patent No. 7372080, “GaN Semiconductor Device”
US Patent, No. 7439546, “Semiconductor Light Emitting Device, Its Manufacturing Method, Semiconductor Device and Its Manufacturing Method”
2004 Sony MVP 2004, Sony Corporation
“Development of High-Power Pure-Blue Semiconductor Laser for GLV Projector”
2004 APEX/JJAP Paper Award 2004, The Japan Society of Applied Physics (JSAP)
“High-Power AlGaInN Laser Diodes with High Kink Level and Low Relative Intensity Noise”
EDUCATION
| 2012 | Visiting scholar | Chemical Engineering | Stanford University California, USA |
| 1994 | Ph.D. | Electrical Engineering | Hokkaido University Hokkaido, Japan |
| 1991 | Master | Electrical Engineering | Hokkaido University Hokkaido, Japan |
| 1989 | Bachelor | Electrical Engineering | Hokkaido University Hokkaido, Japan |
PATENTS
Total number of Inventions: 67 for all over the world, 22 for the US.
51 issued patents and 16 pending patent applications
| Field | Status |
| III-V compound semiconductors: | 5 issued |
| III-Nitride compound semiconductors: | 46 issued 7 pending application |
| Organic semiconductors: | 9 pending application |
USA issued patents list:
| 01 | US8587004 | SEMICONDUCTOR LIGHT EMITTING DEVICE, ITS MANUFACTURING METHOD, SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD |
| 02 | US8460958 | SEMICONDUCTOR LIGHT EMITTING DEVICE, ITS MANUFACTURING METHOD, SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD |
| 03 | US8270450 | Method of manufacturing semiconductor laser, semiconductor laser, optical disc device, method of manufacturing semiconductor device, and semiconductor device. |
| 04 | US7964419 | Semiconductor light emitting device, its manufacturing method, semiconductor device and its manufacturing method. |
| 05 | US7439546 | Semiconductor light emitting device, its manufacturing method, semiconductor device and its manufacturing method. |
| 06 | US7372080 | GaN semiconductor device. |
| 07 | US7091056 | Method of manufacturing a semiconductor light emitting device, semiconductor light emitting device, method of manufacturing a semiconductor device, semiconductor device, method of manufacturing a device, and device. |
| 08 | US7149235 | Multi-beam semiconductor laser device |
| 09 | US7026179 | Method of manufacturing a semiconductor light emitting device utilizing a nitride III-V compound semiconductor substrate. |
| 10 | US6972206 | Nitride semiconductor, semiconductor device, and method of manufacturing the same. |
| 11 | US7282379 | Nitride Semiconductor, Semiconductor Device, And Method Of Manufacturing The Same. |
| 12 | US6995406 | Multi-beam semiconductor laser, semiconductor light-emitting device and semiconductor device. |
| 13 | US6950451 | Multi-beam semiconductor laser element. |
| 14 | US7176499 | Method of manufacturing a semiconductor light emitting device, semiconductor light emitting device, method of manufacturing a semiconductor device, semiconductor device, method of manufacturing a device, and device. |
| 15 | US7339195 | Semiconductor light emitting device, its manufacturing method, semiconductor device and its manufacturing method. |
| 16 | US6890785 | Nitride semiconductor, semiconductor device, and manufacturing methods for the same. |
| 17 | US6829270 | Nitride III-V compound semiconductor substrate, its manufacturing method, manufacturing method of a semiconductor light emitting device, and manufacturing method of a semiconductor device. |
| 18 | US6939730 | Nitride semiconductor, semiconductor device, and method of manufacturing the same. |
| 19 | US6836498 | Semiconductor laser, semiconductor device and nitride series III-V group compound substrate, as well as manufacturing method thereof. |
| 20 | US6372981 | Semiconductor substrate, solar cell using same, and fabrication methods thereof. |
USA pending patentapplications list:
| 01 | US2013143357 (A1) | METHOD OF FORMING ORGANIC THIN FILM AND ORGANIC THIN FILM FORMING APPARATUS, AS WELL AS METHOD OF MANUFACTURING ORGANIC DEVICE. |
| 02 | US2012248563 (A1) | POLARIZATION ORGANIC PHOTOELECTRIC CONVERSION DEVICE, METHOD FOR PRODUCING POLARIZATION ORGANIC PHOTOELECTRIC CONVERSION DEVICE, POLARIZATION OPTICAL DEVICE, IMAGING DEVICE, AND ELECTRONIC APPARATUS. |
PCT pending patent applications list:
| 01 | WO2013065582 (A1) | METHOD FOR PRODUCING ORGANIC SEMICONDUCTOR ELEMENT, ORGANIC SEMICONDUCTOR ELEMENT, METHOD FOR GROWING ORGANIC SINGLE CRYSTAL THIN FILM, ORGANIC SINGLE CRYSTAL THIN FILM, ELECTRONIC DEVICE AND GROUP OF ORGANIC SINGLE CRYSTAL THIN FILMS. |
| 02 | WO2013065276 (A1) | ORGANIC SINGLE CRYSTAL FILM, ORGANIC SINGLE CRYSTAL FILM ARRAY, AND SEMICONDUCTOR DEVICE INCLUDING AN ORGANIC SINGLE CRYSTAL FILM. |
| 03 | WO2012026333 (A1) | METHOD AND DEVICE FOR FORMING ORGANIC THIN FILM, AND METHOD FOR METHOD AND DEVICE FOR FORMING ORGANIC THIN FILM, AND METHOD FOR MANUFACTURING OF ORGANIC DEVICE. |
| 04 | WO2005020396 (A1) | GaN III-V COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME. |
| 05 | WO2004001920 (A1) | GaN SEMICONDUCTOR DEVICE. |
| 06 | WO2003105295 (A1) | MULTIBEAM SEMICONDUCTOR LASER, SEMICONDUCTOR LIGHT- EMITTING DEVICE AND SEMICONDUCTOR DEVICE. |
| 07 | WO2003034560 (A1) | METHOD FOR FABRICATING SEMICONDUCTOR LIGHT EMITTING ELEMENT, SEMICONDUCTOR LIGHT EMITTING ELEMENT, METHOD FOR FABRICATING SEMICONDUCTOR ELEMENT, SEMICONDUCTOR ELEMENT, METHOD FOR FABRICATING ELEMENT AND ELEMENT. |
| 08 | WO2002103868 (A1) | MULTI-BEAM SEMICONDUCTOR LASER ELEMENT. |
| 09 | WO2002054549 (A1) | SEMICONDUCTOR LUMINOUS ELEMENT AND METHOD FOR MANUFACTURE THEREOF, AND SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURE THEREOF. |
PUBLICATIONS
A: International Journals
1. Guillaume Schweicher,Vincent Lemaur,Claude Niebel,Christian Ruzié,Ying Diao,Osamu Goto,Wen-Ya Lee,Yeongin Kim,Jean-Baptiste Arlin,JolantaKarpinska, Alan R Kennedy,Sean R Parkin,Yoann Olivier,Stefan C B Mannsfeld,JérômeCornil,Yves H Geerts,ZhenanBao, “Bulky End-Capped [1]Benzothieno[3,2-b]benzothiophenes: Reaching High-Mobility Organic Semiconductors by Fine Tuning of the Crystalline Solid-State Order”,Advanced Materials 27, 3066-3072 (2015).
2. Osamu Goto, ShigetakaTomiya, Yosuke Murakami, Akira Shinozaki, Akira Toda, JiroKasahara, and Daisuke Hobara,“Organic Single-Crystal Arrays from Solution-Phase Growth Using Micropattern withNucleation Control Region”, Advanced Materials 24, 1117-1122 (2012).
3. Ohta, Y. Ohizumi, Y. Hoshina, T. Tanaka, Y. Yabuki, K. Funato, S. Tomiya, S. Goto, and M. Ikeda,“High-power pure blue laser diodes”, physica status solidi (a)204, No. 6, 2068–2072 (2007).
4. Takao Miyajima, Shingo Takeda, Yoshiyuki Tsusaka, Junji Matsui, Yoshihiro Kudo, ShigetakaTomiya, Tomonori Hino, ShuGoto, Masao Ikeda, and Hironobu Narui, “Structural analysis of ELO-GaN grown on a sapphire substrate as the underlying layer of a GaN-based laser diode”, physica status solidi (a) 204, No. 1, 267-271 (2007).
5. Tomiya,O. Goto, Y. Hoshina, T. Tanaka, and M. Ikeda, “Multiple defects in GaInN multiple quantum wells grown on ELO GaN layers and on GaN substrates”, physica status solidi (c) 3, No. 6, 1779-1782 (2006).
6. Ikeda, T. Mizuno, M. Takeya, S. Goto, S. Ikeda, T. Fujimoto, Y. Ohfuji, and T. Hashizu, “High-power GaN-based semiconductor lasers”, physica status solidi (c) 1, No. 6, 1451-1467 (2004).
7. Tomiya, T. Hino,S. Goto, M. Takeya, and M. Ikeda,“Dislocation related issues in the degradation of GaN-based laser diodes”, IEEE Journal of Selected Topics in Quantum Electronics 10, No. 6, 1277-1286 (2004).
8. Uchida, M. Takeya, S. Ikeda, T. Mizuno, T. Fujimoto, O. Matsumoto, S. Goto, T. Tojyo, and M. Ikeda, “Recent progress in high-power blue-violet lasers”, IEEE Journal of Selected Topics in Quantum Electronics 9, No. 5, 1252-1259 (2003).
9. Miyajima, M. Takeya, S. Goto, S. Tomiya, S. Takeda, H. Kurihara, K. Watanabe, M. Kato, N. Hara, T. Tsusaka, and J. Matsui, “Structure analysis of ELO-GaN using a 2 × 4 μm2 micro-beam X-ray of an 8-GeV storage ring”, physica status solidi (b) 240, No. 2, 285-288 (2003).
10. ShigetakaTomiya, ShuGoto, Motonobu Takeya, and Masao Ikeda, “Defects in degraded GaN-based laser diodes”, physica status solidi (a) 200, No. 1, 139-142 (2003).
11. ShuGoto, Makoto Ohta, Yoshifumi Yabuki, Yukio Hoshina, Kaori Naganuma, KoshiTamamura, Toshihiro Hashizu, and Masao Ikeda, “Super high-power AlGaInN-based laser diodes with a singlebroad-area stripe emitter fabricated on a GaN substrate”, physica status solidi (a) 200, No. 1, 122-125 (2003).
12. Uchida, S. Ikeda, T. Mizuno, S. Goto, T. Sasaki, Y. Ohfuji, T. Fujimoto, O. Matsumoto, K. Oikawa, M. Takeya, Y. Yabuki, and M. Ikeda, “High-power blue-violet lasers grown on 3-inch sapphire and GaN substrate”, Institute of Physics Conference Series No. 174, 307-314 (2003).
13. APEX/JJAP Paper Award from JSAP in 2004
Tsuyoshi Tojyo, Shiro Uchida, Takashi Mizuno, Takeharu Asano, Motonobu Takeya, Tomonori Hino, Satoru Kijima, ShuGoto, Yoshifumi Yabuki, and Masao Ikeda, “High-Power AlGaInN Laser Diodes with High Kink Level and Low Relative Intensity Noise”, Japanese Journal of Applied Physics 41, 1829-1833 (2002).
14. Takeya, T. Tojyo, T. Asano, S. Ikeda, T. Mizuno, O. Matsumoto, S. Goto, Y. Yabuki, S. Uchida, and M. Ikeda, “High-power AlGaInN lasers”, physica status solidi (a) 192, No. 2, 269-276 (2002).
15. ShuGoto, Tsuyoshi Tojyo, Shin-ichiAnsai, Yoshifumi Yabuki, Tomonori Hino, Hirofumi Yamanaka, Yoshinori Moriya, Yoshitomo Ito, Yuichi Hamaguchi, Shiro Uchida, and Masao Ikeda, “Super High Output Power of 4.2 W in AlGaInN-Based Blue-Violet Laser Diode Array”, Institute of Physics Conference Series No 170, 177-182 (2002).
16. Kijima, T. Tojyo,S. Goto, M. Takeya, T. Asano, T. Hino, S. Uchida, and M. Ikeda,“Novel Techniques for Stabilizing Transverse Mode in AlGaInN-Based Laser Diodes”, physica status solidi (a) 188, No. 1, 55–58 (2001).
17.Tsuyoshi Tojyo, Takeharu Asano, Motonobu Takeya, Tomonori Hino, Satoru Kijima, ShuGoto, Shiro Uchida, and Masao Ikeda,“GaN-Based High Power Blue-Violet Laser Diodes”, Japanese Journal of Applied Physics 40, 3206-3210 (2001).
18. ShuGotoh, Takashi Ueda, and ChouhoYamagishi, “Improvement in photovoltaic conversion efficiency of InGaP solar cells grown on Si substrate by thermal cleaning using Si2H6”,Solar energy Materials & Solar Cells 66, 631-636 (2001).
19. Kakinuma, T. Ueda, S. Gotoh, and C. Yamagishi, “Reduction of threading dislocations in GaAs on Si by the use of intermediate GaAs buffer layers prepared under high V/III ratios”, Journal of Crystal Growth 205, 25-30 (1999).
20. Kakinuma, T. Ueda, S. Gotoh, and M. Akiyama, “Depth dependence of hydrogenation using cyclotron plasma in GaAs-on-Si solar cell structures”, Journal of Vacuum Science & Technology A17 (No. 2), 453-457 (1999).
21. Tomoyuki OHSHIMA, Hironobu MORIGUCHI, Ryoji SHIGEMASA, Shu GOTOH, Masanori TSUNOTANI, and Tamotsu KIMURA, “Shottky Characteristics of InAlAs Grown by Metal-Organic Chemical Vapor Deposition”, Japanese Journal of Applied Physics38, Part 1-2B, 1161-1163 (1999).
22. Shu GOTOH, Takashi UEDA, Tomoyuki OHSHIMA, and Hiroaki KAKINUMA, “Effect of Growth Conditions on Electrical Properties of Si-Doped In52Al0.48As Grown by Metalorganic Vapor Phase Epitaxy”, Japanese Journal of Applied Physics38, Part 1-2B, 1048-1051 (1999).
23. Ueda, M. Mohri, S. Gotoh, H. Kakinuma, and M. Akiyama, “Improvement of conversion efficiency by In0.52Al0.48As window layers for p+nInP solar cells”, Solar Energy Materials and Solar Cells 50,197-202 (1998).
24. ShuGotoh, Takashi Ueda, Hiroaki Kakinuma, and Masahiro Akiyama, “Thermal stability of GaAs tunnel junctions using carbon as a p-type dopant grown by metal-organic vapor phase epitaxy”, Solar Energy Materials and Solar Cells 50, 281-288 (1998).
25. Koji Nakamura, SaekoOshiba, Michito Nakajima, ShuGotoh, and Hideaki Horikawa, “Microampere laser threshold at 80OC with InGaAs/GaAs/InGaP buried heterostructure strained quantum well lasers”, Journal of Crystal Growth 170, 377-382 (1997).
26. Shu GOTOH and Hideaki HORIKAWA, “Characteristics of AlGaAs/AlGaAs Interface Regrown Using In-Situ Low-temperature H2 Annealing in Metalorganic Vapor Phase Epitaxy”, Japanese Journal of Applied Physics36, Part 1-3B, 1741-1745 (1997).
27. Gotoh and H. Horikawa, “Improvement of AlGaAs/AlGaAs interface by in-situ low-temperature H2 annealing in metalorganic vapor phase epitaxy”, Applied Physics Letters 69, 641-643 (1996).
28. Jun-ya ISHIZAKI, Shu GOTO, Motoya KISHIDA, Takashi FUKUI, and Hideki HASEGAWA, “Mechanism of Multiatomic Step Formation during Metalorganic Chemical Vapor Deposition Growth of GaAs on (001) Vicinal Surface Studied by Atomic Force Microscopy”, Japanese Journal of Applied Physics 33, Part 1-1B, 721-726 (1994).
29. Shu GOTO, Jun-ya ISHIZAKI, Takashi FUKUI, and Hideki HASEGAWA, “Growth-Behavior and Mechanism of Alkyl-Desorption-Limited Epitaxial Growth on Exactly Oriented and Vicinal Substrates”, Japanese Journal of Applied Physics 33, Part 1-1B, 734-741 (1994).
30. ShuGoto, Jun-yaIshizaki, Takashi Fukui, and Hideki Hasegawa, “Atomic layer epitaxy growth of GaAs/InAssuperlattice structures”, Institute of Physics Conference Series No 129, 139-144 (1992).
31. ShuGoto, Keiichi Higuchi, and Hideki Hasegawa, “Atomic layer epitaxy growth of InAs/GaAsheterostructures and quantum wells”, Institute of Physics Conference Series No 120, 547-552 (1991).
B: Conference papers
1. Osamu Goto, ShigetakaTomiyaa, Yosuke Murakamia, Akira Shinozaki, Akira Toda, JiroKasahara, and Daisuke Hobara, “Solution-phase growth of organic single-crystal arrays”, Proceedings of SPIE 8478, 84780C-2 (2012).
2. Tomiya, S. Goto, and M. Ikeda, “Structural Defects and Degradation Phenomena in High-Power Pure-Blue InGaN-Based Laser Diodes”, Proceedings of the IEEE 98, No. 7, 1208-1213 (2010).
3. Invited
ShigetakaTomiya, Osamu Goto, and Masao Ikeda, “Structural defects and degradation of high-power pure-blue GaN-based laser diodes”, Proceedings of SPIE Vol. 6894, 68940N (2008).
4. Invited
Osamu Goto, ShigetakaTomiya, Yukio Hoshina, Takayuki Tanaka, Makoto Ohta, YoshitsuguOhizumi, Yoshifumi Yabuki, Kenji Funato, and Masao Ikeda, “High Power Pure-Blue Semiconductor Lasers”, Proceedings of SPIE 6485, 64850Z (2007).
5. Invited
ShigetakaTomiya, Tomonori Hino, Takao Miyajima, Osamu Goto, and Masao Ikeda, “Defects and Degradation of Nitride-based Laser Diodes”, Proceedings of SPIE 6133, 613308 (2006).
6. Matsumoto, S. Goto, T. Sasaki, Y. Yabuki, T. Tojyo, S. Tomiya, K. Naganuma, T. Asatsuma, K. Tamamura, S. Uchida and M. Ikeda, “Extremely Long Lifetime Blue-violet Laser Diodes Grown Homoepitaxially on GaN Substrates”, Extended Abstract of the 2002 International Conference on Solid State Device and Materials, pp. 832-833 (2002).
7. Goto, K. Tamamura, O. Matsumoto, T. Tojyo, T. Sasaki, Y. Yabuki, K. Naganuma, T. Asatsuma, S. Uchida, and M. Ikeda, “AlGaInN-based Laser Diodes Homoepitaxially Grown on GaN Substrate”, Electronic Materials Conference (44th 2002). Late News Paper, V9.
8. Invited
Shiro Uchida, Satoru Kijima, Shinichi Ansai, Tsuyoshi Tojyo, Katsuyoshi Shibuya, Shinroh Ikeda, Takashi Mizuno, Motonubu Takeya, ShuGoto, Takeharu Asano, and Masao Ikeda, “High-power 400-nm AlGaInN/650-nm AlGaInP semiconductor lasers”, Proceedings of SPIE 4651, 18 (2002).
9. Goto, T. Tojyo, S. Ansai, Y. Yabuki, T. Hino, H. Yamanaka, Y. Morita, Y. Ito, S. Uchida, and M. Ikeda, “Super High Output Power over 3 W in Blue-Violet AlGaInN Laser Diode Array”, Proceeding of the 28thInternational Symposium on Compound Semiconductors, Tokyo, 2001, pp. 177-182.
10. Tojyo, T. Asano, T. Hino, S. Kijima,S. Goto, M. Takeya, T. Mizuno, Y. Yabuki, S. Uchida, and M. Ikeda, “AlGaInN High Power Lasers”, International Symposium on Optical Memory (ISOM 2001) Technical Digest, p. 226 (2001).
11. Yamagishi, H. Kakinuma, T. Ueda, and S. Gotoh, “Improvement of GaAs Solar Cells on Si Substrates by Thermal Cycle Annealing”, TECHNICAL DIGEST of 11th International Photovoltaic science and Engineering Conference (PVSEC-11), pp. 437-438 (1999).
12. ShuGotoh, Takashi Ueda, and ChouhoYamagishi, “Characteristics of InGaP solar cells grown on GaAs/Si substrates with A-step surface formed by thermal cleaning in Si2H6 ambient”, TECHNICAL DIGEST of 11th International Photovoltaic science and Engineering Conference (PVSEC-11), pp. 419-420 (1999).
13. Ohshima, H. Moriguchi, R. Shigemasa,S. Gotoh, M. Tsunotani, and T. Kimura, “Evaluation of InAlAsShottky characteristics grown by MOVPE”, Proceedings of 10th International Conference on Indium Phosphide and Related Materials (IPRM’98), pp. 761-764 (1998).
14. Gotoh, T. Ueda, T. Ohsima, and H. Kakinuma, “Effect of growth conditions on Si-doped InAlAs grown by metal-organic vapor phase epitaxy”, Proceedings of 10th International Conference on Indium Phosphide and Related Materials (IPRM’98), pp. 119-122 (1998).
15. Takashi Ueda, M. Mohri, Goto, H. Kakinuma, and M. Akiyama, “Improvement of Conversion Efficiency by InAlAs Window Layers for p+nInP solar Cells”, TECHNICAL DIGEST of 9th International Photovoltaic Science and Engineering conference (PVSEC-9), pp. 545-546 (1996).
16. ShuGotoh, Takashi Ueda, Hiroaki Kakinuma, and Masahiro Akiyama, “Thermal Stability of GaAs Tunnel Junctions Using Carbon as a p-type Dopant”, TECHNICAL DIGEST of 9th International Photovoltaic Science and Engineering conference (PVSEC-9), pp. 795-796 (1996).
17. ShuGotoh and Hideaki Horikawa, “Characteristics of AlGaAs/AlGaAs Interface after In-Situ Low-temperature H2 Annealing and MOCVD Regrowth”, Extended Abstract of the 1996 International Conference on Solid State Devices and Materials, pp. 673-675 (1996).
18. Nakamura, S. Oshiba, M. Nakajima, S. Gotoh, and H. Horikawa, “Microampere Operation at 80OC with InGaAs/GaAs/InGaP Buried Heterostructure Strained Quantum Well Laser Diodes”, Proceedings of the 8th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE8), OA1 (1996).
19. Jun-yaIshizaki, ShuGoto, MotoyaKishida, Takashi Fukui, and Hideki Hasegawa, “Surface Morphology of Metalorganic Chemical Vapor Deposition Grown GaAs Studied by Atomic Force Microscopy”, Proceedings of International Conference on Advanced Microelectroic Device and Processing, pp. 555-558 (1994).
20. Jun-yaIshizaki, ShuGoto, MotoyaKishida, Takashi Fukui, and Hideki Hasegawa, “Mechanism of Multisatomic Step Formation during MOCVD by Atomic Force Microscopy”, Extended Abstract of the 1993 International Conference on Solid State Devices and Materials, pp. 294-296 (1993).
21. ShuGoto, Jun-yaIshizaki, Takashi Fukui, and Hideki Hasegawa, “Novel Step Height Reduction Phenomenon during Alkyl-Desorption Limited Epitaxial growth on Vicinal Substrates”, Extended Abstract of the 1993 International Conference on Solid State Devices and Materials, pp. 751-753 (1993).
22. Takashi Fukui, Jun-yaIshizaki, ShuGoto, MotoyaKishida, and Hideki Hasegawa, “Atomic Steps on MOCVD Grown GaAs studied by AFM”, Record on 12th Alloy Semiconductor Physics and Electronics,pp. 353-358 (1993).
23. Takashi Fukui, Makoto Kasu, Jun-yaIshizaki,ShuGoto, MotoyaKishida, Shinjiro Hara, Hirotatsu Ishii, and Hideki Hasegawa, “Multi-Atomic Steps on MOCVD-grown GaAs Vicinal Surfaces Studied by Atomic Force Microscopy”, Proceeding of the 6th Topical Meeting on Crystal Growth Mechanism, pp. 135-139 (1993).