Publications
Academic Achievements
Professor Chang has published a total of 165 papers so far (148 SCI journals + 17 EI conferences). All SCI papers have been quoted 3,309 times, 1 ESI is cited, H index 34. In terms of invention patents, a total of 15 patents in mainland China, 23 patents in Taiwan, China, and 13 US patents.
Publications
(*:Corresponding Author)
Journal
2022
147.P. Huang, L. Li, D. J. Hsieh and K. C. Chang*, “Electro-Optic Optimization of Porcine Collagen through Protein-Amicable Supercritical Treatment”, ACS Sustainable Chemistry & Engineering, 2022, 10, 48, 16037–16045. (IF：9.224)
146.Q. Q. Ren, Y. P. Zhang, S. H. Ma, X. F, Wang, K. C. Chang, Y. M. Zhang, F. Yin, Z. G. Li*and M. Zhang*, “Low-temperature Supercritical Activation Enables High-performance Detection of Cell-Free DNA by All-carbon-nanotube Transistor”, Carbon, 2022, 196,120-127. (IF:11.037)
145.J. Wu, X. Liu, B. A. Malomed, K. C. Chang, M. Zhao, K. Qi, Y. Sha, Z. T. Xie, M. Clementi, C. Brès, S. Zhang, H. Fu* and Q. Li*, “Observation of SQUID-Like Behavior in Fiber Laser with Intra-Cavity Epsilon-Near-Zero Effect”, Laser & Photonics Reviews, 2022, 2200487. (IF:10.947)
144.F. Zheng, L. Li, L. Hu, X. Huang, T. Kuo and K. C. Chang*, “Self-Alignment Embedded Thin-Film Transistor with High Transparency and Optimized Performance”, Advanced Materials Technologies, 2022, 2200879. (IF:8.856)
143.F. Du, T. Xie, J. Wang, K. C. Chang, X. Lin*, F. Hou, R. Chen, A. Han and Z. Liu*, “All-HKMG-bounded SCR for Advanced ESD Protection in 14 nm FinFET Technology”, Semiconductor Science and Technology, 2022, 37(8), 085001. (IF:2.048)
142.K. C. Chang, Z. D. Wang, Q. Zhou, X. X. Zhang, X. N. Lin and L. Li*, “Exploration of Physicochemical Mechanism for Negative Bias Temperature Instability in GaN-HEMTs by Extracting Activation Energy of Dislocations”, Advanced Materials Interfaces, 2022, 9(24), 2200871. (IF:6.389)
141.K. C. Chang, T. J. Dai, Z. D. Wang, Z. W. Huang, X. N. Lin and L. Li*, “The observation of Gaussian Distribution and Origination Identification of Deep Defects in AlGaN/GaN MIS-HEMT”, Applied Physics Letters, 2022, 120(17), 172107. (IF:3.971)
140.F. Du, K. C. Chang, X. Lin*, F. Hou, Y. Zhang, A. Han, X. Luo and Z. Liu*, “Compact and Fast Response Dual-Directional SCR for Nanoscale ESD Protection Engineering”, IEEE Transactions on Electron Devices, 2022, 69(6), 3490–3493. (IF:3.221)
2021
139.P. Huang, K. C. Chang, J. Ge, C. Peng, X. Wu*, J. Chen and Z. Lin, “Offset-Compensation High-Performance Sense Amplifier for Low-Voltage DRAM Based on Current Mirror and Switching Point”, IEEE Transactions on Circuits and Systems II: Express Briefs, 2021, 69(4), 2011–2015. (IF:3.691)
138.J. Zhang, M. Zhang*, K. C. Chang, Z. Rong, Y. Zhang, S. Zhang and M. Chan, “Analysis of Carrier Behavior for Amorphous Indium Gallium Zinc Oxide after Supercritical Carbon Dioxide Treatment”, Advanced Materials Interfaces, 2021, 9(14), 2102349. (IF:6.389)
137.K. C. Chang, Q. Zhou, K. Liu, L. Li*, R. Zhang, H.-J. Liu* and T.-P. Kuo, “Eco-Friendly, Highly Efficient Ethanol-Assisted Supercritical Preparation of an Ultrathin ZnO Nanotube”, ACS Sustainable Chemistry & Engineering, 2021, 9(46), 15478–15483. (IF: 9.224)
136.Z. Peng, F. Wu, L. Jiang, G. Cao, B. Jiang, G. Cheng, S. Ke, K. C. Chang*, L. Li, and C. Ye*, “HfO2-Based Memristor as an Artificial Synapse for Neuromorphic Computing with Tri-Layer HfO2/BiFeO3/HfO2 Design”, Advanced Functional Materials, 2021, 31(48), 2107131. (IF:19.924)
135.L. Hu, L. Li, K. C. Chang*, X. Lin, P. Huang and S. Zhang, “Ultrasensitive Freestanding and Mechanically Durable Artificial Synapse with Attojoule Power Based on Na‐Salt Doped Polymer for Biocompatible Neuromorphic Interface”, Advanced Functional Materials, 2021, 31(42), 2106015. (IF:19.924)
134.L. Li, L. D. Hu, K. Liu, K. C. Chang*, R. Zhang, X. Lin, S. D. Zhang, P. Huang, H. J. Liu and T. P. Kuo, “Bifunctional Homologous Alkali-metal Artificial Synapse with Regenerative Ability and Mechanism Imitation of Voltage-gated Ion Channels”, Material Horizons, 2021, 8(11), 3072-3081. (IF:15.717)
133.K. C. Chang, K. Liu, L. D. Hu, L. Li*, X. Lin, S. D. Zhang, R. Zhang, H. J. Liu and T. P. Kuo, “Supercritical Ammoniation-Enabled Interfacial Polarization for Function-Mode Transformation and Overall Optimization of Thin-Film Transistors”, ACS Applied Materials and Interfaces, 2021, 13(33), 40053–40061. (IF:10.383)
132.J. Wu, X. Liu, H. Fu, K. C. Chang, S. Zhang, H. Y. Fu and Q. Li*, “Manipulation of epsilon-near-zero wavelength for the optimization of linear and nonlinear absorption by supercritical fluid”, Scientific Reports, 2021, 11(1), 15936. (IF:4.997)
131.Z. Xin, Y. Tan, T. Chen, E. Iranmanesh, L. Li, K. C. Chang*, S. Zhang, C. Liu and H. Zhou*, “Visible-light-stimulated Synaptic InGaZnO Phototransistors Enabled by Wavelength-tunable Perovskite Quantum Dots”, Nanoscale Advances, 2021, 3(17), 5046–5052. (IF:5.598)
130.F. Du, K. C. Chang, X. Lin*, F. Hou, L. Chen, X. Luo and Z. Liu*, “Novel Symmetrical Dual-Directional SCR with p-Type Guard Ring for High-Voltage ESD Protection”, IEEE Transactions on Electron Devices, 2021, 68(8), 4164–4167. (IF:3.221)
129.L. Li, T. J. Dai, K. Liu, K. C. Chang*, R. Zhang, X. Lin, H. J. Liu, Y. C. Lai and T. P. Kuo, “Achieving Complementary Resistive Switching and Multi-Bit Storage Goals by Modulating the Dual-Ion Reaction through Supercritical Fluid-Assisted Ammoniation”, Nanoscale, 2021, 13(33), 14035–14040. (IF:8.307)
128.M. Li, W.-Y. Cheng, Y.-C. Li, H.-M. Wu, Y.-C. Wu, H.-W. Lu, S.-L. Cheng, L. Li, K. C. Chang, H.-J. Liu, Y.-F. Lin*, L.-Y. Lin* and Y.-C. Lai*, “Deformable, resilient, and Mechanically-Durable Triboelectric Nanogenerator Based on Recycled Coffee Waste for Wearable Power and Self-Powered Smart Sensors”, Nano Energy, 2021, 79, 1054054. (IF:19.069)
127.X. F. Wang, K. C. Chang, Z. W. Zhang, Q, Liu, L. Lei, S. H. Ma and M. Zhang*, “Performance Enhancement and Mechanism Exploration of All-Carbon-Nanotube Memory with Hydroxylation and Dehydration Through Supercritical Carbon Dioxide”, Carbon, 2021, 173, 97-104. (IF:11.307)
126.J. N. Zhang, W. H. Huang, K. C. Chang, Y. H. Shi, C. B. Zhao, X. W. Wang, H, Meng, S. D. Zhang and M. Zhang*, “Performance Enhancement and Bending Restoration for Flexible Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors by Low-Temperature Supercritical Dehydration Treatment”, ACS Applied Materials & Interfaces, 2021, 13(7), 8584-8594. (IF:10.383)
125.K. C. Chang*, L. D. Hu, K. Qi, L. Li, X. N. Lin, S. D Zhang, Z. W. Wang, Y. C. Lai, H. J. Liu and T. P. Kuo, “Low-temperature supercritical dehydroxylation for achieving an ultra-low subthreshold swing of thin-film transistors”, Nanoscale, 2021, 13(11), 5700-5705. (IF:8.307)
DOI:10.1039/D0NR08208B
Article web link：https://doi.org/10.1039/D0NR08208B
124.L. D. Hu, H. J. Lou*, W. T. Li, K. C. Chang* and X. N. Lin*, “Suppression of Statistical Variability in Junctionless FinFET Using Accumulation-Mode and Charge Plasma Structure”, IEEE Transactions on Electron Devices, 2021, 68(1), 399-404. (IF:3.221)
DOI:10.1109/TED.2020.3040137
Article web link：https://doi.org/10.1109/TED.2020.3040137
2020
123.Y. Shi, Y. Zheng, J. Wang, R. Zhao, T. Wang, C. Zhao, K. C. Chang, H. Meng, X. Wang, “Hysteresis-Free, High-Performance Polymer-Dielectric Organic Field-Effect Transistors Enabled by Supercritical Fluid”, Research, 2020, 6587102. (IF：11.036)
122.M. H. Liu, Z. W. Zhang, K. C. Chang, X. N. Lin, L. Li and Y. F. Jin*, “Characterization and optimization of AlGaN/GaN metal-insulator semiconductor heterostructure field effect transistors using supercritical CO2/H2O technology”, Chinese Physics B, 2020, 29(12), 127101. (IF:1.652)
DOI:10.1088/1674-1056/abb22f
Article web link：https://doi.org/10.1088/1674-1056/abb22f
121.Y. X. Liu, C. Ye*, K. C. Chang, L. Li, B. Jiang, C. Xia, L. Liu, X. Zhang, X. Y. Liu, T. Xia, Z. H. Peng, G. S. Cao, G. Cheng, S. W. Ke and J. H. Wang, “A Robust and Low-Power Bismuth Doped Tin Oxide Memristor Derived from Coaxial Conductive Filaments”, Small, 2020, 16(46), 2004619. (IF:15.153)
DOI:10.1002/smll.202004619
Article web link：https://doi.org/10.1002/smll.202004619
120.K. C. Chang, T. J. Dai, L. Li*, X. N. Lin*, S. D. Zhang, Y. C. Lai, H. J. Liu and Y. E. Syu, “Unveiling the influence of surrounding materials and realization of multi-level storage in resistive switching memory”, Nanoscale, 2020, 12(43), 22070-22074. (IF:8.307)
DOI:10.1039/d0nr05900e
Article web link：https://doi.org/10.1039/d0nr05900e
119.K. Qi, L. Li, K. C. Chang*, X. N. Lin*, Y. C. Lai, H. T. Zheng, G. Y. Huang and T. P. Kuo, “Supercritical Removal Method: Rapid Elimination of Impurities in Polymethyl-methacrylate at Near Room Temperature and Mechanism Investigation of Insulating Property Improvement”, Journal of Materials Chemistry C, 2020, 8(44), 15664-15668. (IF:8.067)
DOI:10.1039/D0TC03975F
Article web link：https://doi.org/10.1039/D0TC03975F
118.L. Li, K. C. Chang*, X. N. Lin*, Y. C. Lai, R. Zhang and T. P. Kuo, “Variable-temperature activation energy extraction to clarify the physical and chemical mechanisms of the resistive switching process”, Nanoscale, 2020, 12(29), 15721-15724. (IF:8.307)
DOI:10.1039/d0nr04053c
Article web link：https://doi.org/10.1039/d0nr04053c
117.L. Li, K. C. Chang*, C. Ye*, X. Lin, R. Zhang, Z. Xu, W. Xiong, Y. Zhou and T. P. Kuo, “An Indirect Way to Achieve Comprehensive Performance Improvement of Resistive Memory: When Hafnium Meets ITO in Electrode”, Nanoscale, 2020, 12(5), 3267-3272. (IF: 8.307)
DOI:10.1039/c9nr08943h
Article web link：https://doi.org/10.1039/c9nr08943h
2019
116.C. Ye, Z. Xu, K. C. Chang*, L. Li*, X. N. Lin, R. Zhang, Y. Zhou, W. Xiong and T. P. Kuo, “Hafnium nanocrystals observed in a HfTiO compound film bring about excellent performance of flexible selectors in memory integration”, Nanoscale, 2019, 11(43), 20792-20796. (IF: 8.307)
DOI:10.1039/C9NR07470H
Article web link：https://doi.org/10.1039/C9NR07470H
115.L. Li, K. C. Chang*, X. N. Lin, R. Zhang and J. H. Lou, “Insulating Property Improvement of Polyimide in Devices by Low‐Temperature Supercritical Fluids”, Advanced Electronic Materials, 2019, 5(12), 1900580. (IF:7.633)
DOI:10.1002/aelm.201900580
Article web link：https://doi.org/10.1002/aelm.201900580
114.Z. W. Zhang, M. Zhang*, C. H. Du, L. Li and K. C. Chang, “Improving Performance of All-Carbon-Nanotube Thin-Film Transistors by Low Temperature Supercritical CO2 Fluid Activation”, IEEE Electron Device Letters, 2019, 40(6), 921-924. (IF:4.816)
DOI:10.1109/LED.2019.2912197
Article web link：https://doi.org/10.1109/LED.2019.2912197
2018
113.L. Zhang, H. Huang, C. Ye*, K. C. Chang, R. L. Zhang, Q. Xia, X. D. Wei, W. Wei and W. F. Wang, “Exploration of highly enhanced performance and resistive switching mechanism in hafnium doping ZnO memristive device”, Semiconductor Science and Technology, 2018, 33(8), 085013. (IF:2.048)
DOI:10.1088/1361-6641/aacff1
Article web link：https://doi.org/10.1088/1361-6641/aacff1
112.Y. P. Li, H. Q. Wang*, T. J. Chu, Y. C. Li, X. J. Li, X. X. Liao, X. D. Wang, H. Zhou, J. Y. Kang, K. C. Chang, T. C. Chang*, T. M. Tsai and J. C. Zheng*, “Tuning the nanostructures and optical properties of undoped and N-doped ZnO by supercritical fluid treatment”, AIP Advances, 2018, 8(5), 055310. (IF:1.697)
DOI:10.1063/1.5026446
Article web link：https://doi.org/10.1063/1.5026446
111.R. C. Wang*, Y. W. Chen, T. C. Chang, K. C. Chang and T. M. Tsai, “ZnO/N:ZnO core-shell nanorods prepared via supercritical CO2-N process: Tunable doping and response reversal phenomena for gas sensing”, Ceramics International, 2018, 44(6), 7296-7299. (IF:5.532)
DOI:10.1016/j.ceramint.2018.01.018
Article web link：https://doi.org/10.1016/j.ceramint.2018.01.018
110.K. H. Chen*, T. M. Tsai, C. M. Cheng*, S. J. Huang, K. C. Chang, S. P. Liang and T. F. Young, “Schottky Emission Distance and Barrier Height Properties of Bipolar Switching Gd:SiOx RRAM Devices under Different Oxygen Concentration Environments”, Materials, 2018, 11(1), 43. (IF:3.748)
DOI:10.3390/ma11010043
Article web link：https://doi.org/10.3390/ma11010043
109.Q. Xia, J. J. Wu, C. H. Pan, C. Ye*, K. C. Chang, T. C. Chang, C. C. Shih and C. H. Wu, “Impact of Forming Compliance Current on Storage Window Induced by a Gadolinium Electrode in Oxide-Based Resistive Random Access Memory”, IEEE Transactions on Electron Devices, 2018, 65(1), 96-100. (IF:3.221)
DOI:10.1109/TED.2017.2775104
Article web link：https://doi.org/10.1109/TED.2017.2775104
2017
108.F. Y. Yuan, N. Deng*, C. C. Shih, Y. T. Tseng, T. C. Chang*, K. C. Chang, M. H. Wang, W. C. Chen, H. X. Zheng, H. Q. Wu, H. Qian and S. M. Sze, “Conduction Mechanism and Improved Endurance in HfO2-Based RRAM with Nitridation Treatment”, Nanoscale Research Letters,2017, 12(1), 574. (IF:5.418)
DOI:10.1186/s11671-017-2330-3
Article web link：https://doi.org/10.1186/s11671-017-2330-3
107.H. L. Chen, P. H. Chen, T. C. Chang*, T. F. Young*, M. C. Wang, C. F. Ai, T. M. Tsai, K. C. Chang, M. C. Chen, Y. T. Su, C. C. Yang and C. C. Lin, “Super Critical Fluid Technique to Enhance Current Output on Amorphous Silicon-Based Photovoltaic”, IEEE Electron Device Letters, 2017, 38(10), 1401-1404. (IF:4.816)
DOI:10.1109/LED.2017.2747096
Article web link：https://doi.org/10.1109/LED.2017.2747096
106.H. C. Chiang, T. C. Chang*, P. Y. Liao, B. W. Chen, Y. C. Tsao, T. M. Tsai, Y. C. Chien, Y. C. Yang, K. F. Chen, C. L. Yang, Y. J. Hung, K. C. Chang, S. D. Zhang, S. C. Lin and C. Y. Yeh, “Investigating Degradation Behaviors Induced by Mobile Cu Ions under High Temperature Negative Bias Stress in a-InGaZnO Thin Film Transistors”, Applied Physics Letters, 2017, 111(13), 133504. (IF:3.971)
DOI:10.1063/1.5004526
Article web link：https://doi.org/10.1063/1.5004526
105.Y. T. Tseng, P. H. Chen, T. C. Chang*, K. C. Chang*, T. M. Tsai, C. C. Shih, H. C. Huang, C. C. Yang, C. Y. Lin, C. H. Wu, H. X. Zheng, S. D. Zhang and S. M. Sze, “Solving the Scaling Issue of Increasing Forming Voltage in Resistive Access Memory Using High-k Spacer Structure”, Advanced Electronic Materials, 2017, 3(9), 1700171. (IF:7.633)
DOI:10.1002/aelm.201700171
Article web link：https://doi.org/10.1002/aelm.201700171
104.C. H. Wu, C. H. Pan, P. H. Chen, T. C. Chang*, T. M. Tsai, K. C. Chang, C. C. Shih, T. Y. Chi, T. J. Chu, J. J. Wu, X. Q. Du, H. X. Zheng and S. M. Sze, “Inert Pt Electrode Switching Mechanism After Controlled Polarity-forming Process in In2O3-based Resistive Random Access Memory”, Applied Physics Express, 2017, 10(9), 094102. (IF:2.819)
DOI:10.7567/APEX.10.094102
Article web link：https://doi.org/10.7567/APEX.10.094102
103.P. H. Chen, T. C. Chang*, K. C. Chang*, T. M. Tsai, C. H. Pan, C. C. Shih, C. H. Wu, C. C. Yang, W. C. Chen, J. C. Lin, M. H. Wang, H. X. Zheng, M. C. Chen and S. M. Sze, “Effects of Plasma Treatment Time on Surface Characteristics of Indium-Tin-Oxide Film for Resistive Switching Storage Applications”, Applied Surface Science, 2017, 414, 224-229. (IF:7.392)
DOI:10.1016/j.apsusc.2017.04.060
Article web link：https://doi.org/10.1016/j.apsusc.2017.04.060
102.B. W. Chen, H. L. Chen, T. C. Chang*, Y. J. Hung, S. P. Huang, Y. Z. Zheng, Y. H. Lin, P. Y. Liao, L. H. Chen, J. W. Yang, H. C. Chiang, W. C. Su, Y. C. Tsao, A. K. Chu, H. W. Li, C. H. Tsai, H. H. Lu, K. C. Chang and T. F Young, “Systematic Analysis of High-Current Effects in Flexible Polycrystalline-Silicon Transistors Fabricated on Polyimide”, IEEE Transactions on Electron Devices, 2017, 64(8), 3167-3173. (IF:3.221)
DOI:10.1109/TED.2017.2715500
Article web link：https://doi.org/10.1109/TED.2017.2715500
101.C. Y. Lin, P. H. Chen, T. C. Chang*, K. C. Chang*, S. D. Zhang, T. M. Tsai, C. H. Pan, M. C. Chen, Y. T. Su, Y. T. Tseng, Y. F. Chang, Y. C. Chen, H. C. Huang and S. M. Sze, “Attaining Resistive Switching Characteristics and Selector Properties by Varying Forming Polarities in a Single HfO2-based RRAM Device with a Vanadium Electrode”, Nanoscale, 2017, 9(25), 8586-8590. (IF:8.307)
DOI:10.1039/c7nr02305g
Article web link：https://doi.org/10.1039/c7nr02305g
100.Y. H. Lu, T. C. Chang*, L. H. Chen, Y. S. Lin, X. W. Liu, J. C. Liao, C. Y. Lin, C. H. Lien, K. C. Chang* and S. D. Zhang, “Abnormal Recovery Phenomenon Induced by Hole Injection During Hot Carrier Degradation in SOI n-MOSFETs”, IEEE Electron Device Letters, 2017, 38(7), 835-838. (IF:4.816)
DOI:10.1109/LED.2017.2703309
Article web link：https://doi.org/10.1109/LED.2017.2703309
99.P. Y. Liao, T. C. Chang*, W. C. Su, B. W. Chen, L. H. Chen, T. Y. Hsieh, C. Y. Yang, K. C. Chang*, S. D. Zhang, Y. Y. Huang, H. M. Chang and S. C. Chiang, “Impact of Repeated Uniaxial Mechanical Strain on Flexible a-IGZO Thin Film Transistors with Symmetric and Asymmetric Structures”, Applied Physics Letters, 2017, 110(26), 263505. (IF:3.971)
DOI:10.1063/1.4990964
Article web link：https://doi.org/10.1063/1.4990964
98.X. Q. Du, X. J. Wu, T. C. Chang*, K. C. Chang*, C. H. Pan, C. H. Wu, Y. S. Lin, P. H. Chen, S. D. Zhang and S. M. Sze, “Recovery of Failed Resistive Switching Random Access Memory Devices by a Low-temperature Supercritical Treatment”, Applied Physics Express, 2017, 10(6), 064001. (IF:2.819)
DOI:10.7567/APEX.10.064001
Article web link：https://doi.org/10.7567/APEX.10.064001
97.C. Y. Lin, T. C. Chang*, K. J. Liu, L. H. Chen, J. Y. Tsai, C. E. Chen, Y. H. Lu, H. W. Liu, J. C. Liao and K. C. Chang*, “Analysis of Contrasting Degradation Behaviors in Channel and Drift Regions Under Hot Carrier Stress in PDSOI LD N-Channel MOSFETs”, IEEE Electron Device Letters, 2017, 38(6), 705-707. (IF:4.816)
DOI:10.1109/LED.2017.2694972
Article web link：https://doi.org/10.1109/LED.2017.2694972
96.Y. X. Zhou, Y. Li, Y. T. Su, Z. R. Wang, L. Y. Shih, T. C. Chang*, K. C. Chang, S. B. Long, S. M. Sze and X. S. Miao*, “Nonvolatile Reconfigurable Sequential Logic in a HfO2 Resistive Random Access Memory Array”, Nanoscale, 2017, 9(20), 6649-6657. (IF:8.307)
DOI:10.1039/c7nr00934h
Article web link：https://doi.org/10.1039/c7nr00934h
95.P. Y. Liao, T. C. Chang*, Y. J. Chen, W. C. Su, B. W. Chen, L. H. Chen, T. Y. Hsieh, C. Y. Yang, K. C. Chang*, S. D. Zhang, Y. Y. Huang, H. M. Chang and S. C. Chiang, “The Effect of Device Electrode Geometry on Performance After Hot-Carrier Stress in Amorphous In-Ga-Zn-O Thin Film Transistors with Different Via-Contact Structures”, Applied Physics Letters, 2017, 110(20), 202103. (IF:3.971)
DOI:10.1063/1.4983713
Article web link：https://doi.org/10.1063/1.4983713
94.C. H. Wu, T. C. Chang*, T. M. Tsai, K. C. Chang*, T. J. Chu, C. H. Pan, Y. T. Su, P. H. Chen, S. K. Lin, S. J. Hu and S. M. Sze, “Effect of Charge Quantity in Conduction Mechanism of High- and Low-Resistance States During Forming Process in a One-Transistor-One-Resistor Resistance Random Access Memory”, Applied Physics Express, 2017, 10(5), 054101. (IF:2.819)
DOI:10.7567/APEX.10.054101
Article web link：https://doi.org/10.7567/APEX.10.054101
93.W. C. Su, T. C. Chang*, P. Y. Liao, Y. J. Chen, B. W. Chen, T. Y. Hsieh, C. L. Yang, Y. Y. Huang, H. M. Chang, S. C. Chiang, K. C. Chang* and T. M. Tsai, “The Effect of Asymmetrical Electrode Form After Negative Bias Illuminated Stress in Amorphous IGZO Thin Film Transistors”, Applied Physics Letters, 2017, 110(15), 159901. (IF:3.971)
DOI:10.1063/1.4979076
Article web link：https://doi.org/10.1063/1.4979076
92.B. W. Chen, T. C. Chang*, K. C. Chang*, Y. J. Hung, S. P. Huang, H. M. Chen, P. Y. Liao, Y. H. Lin, H. C. Huang, H. C. Chiang, C. L. Yang, Y. Z. Zheng, A. K. Chu, H. W. Li, C. H. Tsai, H. H. Lu, T. T. J. Wang and T. C. Chang, “Surface Engineering of Polycrystalline Silicon for Long-Term Mechanical Stress Endurance Enhancement in Flexible Low Temperature Poly-Si Thin-Film Transistors”, ACS Applied Materials & Interfaces, 2017, 9(13), 11942-11949. (IF:10.383)
DOI:10.1021/acsami.6b14525
Article web link：https://doi.org/10.1021/acsami.6b14525
91.Y. C. Chien, T. C. Chang*, H. C. Chiang, H. M. Chen, Y. C. Tsao, C. C. Shih, B. W. Chen, P. Y. Liao, T. Y. Chu, Y. C. Yang, Y. J. Hung, T. M. Tsai and K. C. Chang*, “Roel of H2O Molecules in Passivation of a-InGaZnO Thin Film Transistors”, IEEE Electron Device Letters, 2017, 38(4), 469-472. (IF:4.816)
DOI:10.1109/LED.2017.2666198
Article web link：https://doi.org/10.1109/LED.2017.2666198
90.T. M. Tsai*, C. H. Wu, K. C. Chang, C. H. Pan, P. H. Chen, N. K. Lin, J. C. Lin, Y. S. Lin, W. C. Chen, H. Q. Wu, N. Deng and H. Qian, “Controlling the Degree of Forming Soft-Breakdown and Producing Superior Endurance Performance by Inserting BN-Based Layers in Resistive Random Access Memory”, IEEE Electron Device Letters, 2017, 38(4), 445-448. (IF:4.816)
DOI:10.1109/LED.2017.2664881
Article web link：https://doi.org/10.1109/LED.2017.2664881
89.W. C. Chen, T. M. Tsai*, K. C. Chang*, H. L. Chen, C. C. Shih, C. C. Yang, J. C. Lin, Y. S. Lin, Y. T. Su and P. H. Chen, “Influence of Ammonia on Amorphous Carbon Resistive Random Access Memory”, IEEE Electron Device Letters, 2017, 38(4), 453-456. (IF:4.816)
DOI:10.1109/LED.2017.2668463
Article web link：https://doi.org/10.1109/LED.2017.2668463
88.K. H. Chen*, C. M. Cheng, M. C. Kao, K. C. Chang, T. C. Chang, T. M. Tsai, S. Wu and F. Y. Su, “Influence of Thermal Annealing Treatment on Bipolar Switching Properties of Vanadium Oxide Thin-Film Resistance Random-Access Memory Devices”, Journal of Electronic Materials, 2017, 46(4), 2147-2152. (IF:2.047)
DOI:10.1007/s11664-016-5148-3
Article web link：https://doi.org/10.1007/s11664-016-5148-3
87.Z. R. Wang, Y. T. Su, Y. Li, Y. X. Zhou, T. J. Chu, K. C. Chang, T. C. Chang*, T. M. Tsai, S. M. Sze and X. S. Miao, “Functionally Complete Boolean Logic in 1T1R Resistive Random Access Memory”, IEEE electron Device Letters, 2017, 38(2), 179-182. (IF:4.816)
DOI:10.1109/LED.2016.2645946
Article web link：https://doi.org/10.1109/LED.2016.2645946
86.P. H. Chen, T. C. Chang*, K. C. Chang, T. M. Tsai*, C. H. Pan, M. C. Chen, Y. T. Su, C. Y. Lin, Y. T. Tseng, H. C. Huang, H. Q. Wu, N. Deng, H. Qian and S. M. Sze, “Resistance Switching Characteristic Induced by O2 Plasma Treatment of an Indium Tin Oxide Film for Use as an Insulator in Resistive Random Access Memory”, ACS Applied Materials & Interfaces, 2017, 9(3), 3149-3155.(IF:10.383)
DOI:10.1021/acsami.6b14282
Article web link：https://doi.org/10.1021/acsami.6b14282
85.Y. T. Su, T. C. Chang*, T. M. Tsai, K. C. Chang, T. J. Chu, H. L. Chen, M. C. Chen, C. C. Yang, H. C. Huang, I. Lo, J. C. Zheng and S. M. Sze, “Suppression of Endurance Degradation by Applying Constant Voltage Stress in One-Transistor and One-Resistor Resistive Random Access Memory”, Japanese Journal of Applied Physics, 2017, 56(1), 010303. (IF:1.491)
DOI:10.7567/JJAP.56.010303
Article web link：https://doi.org/10.7567/JJAP.56.010303
84.C. Ye, J. J. Wu, C. H. Pan, T. M. Tsai*, K. C. Chang, H. Q. Wu, N. Deng and H. Qian, “Boosting the Performance of Resistive Switching Memory with a Transparent ITO Electrode Using Supercritical Fluid Nitridation”, RSC Advances, 2017, 7(19), 11585-11590. (IF:4.036)
DOI:10.1039/c7ra01104k
Article web link：https://doi.org/10.1039/c7ra01104k
2016
83.Y. Li, Y. X. Zhou, L. Xu, K. Lu, Z. R. Wang, N. Duan, L. Jiang, L. Cheng, T. C. Chang, K. C. Chang, H. J. Sun, K. H. Xue and X. S. Miao*, “Realization of Functional Complete Stateful Boolean Logic in Memristive Crossbar”, ACS Applied Materials & Interfaces, 2016, 8(50), 34559-34567. (IF:10.383)
DOI:10.1021/acsami.6b11465
Article web link：https://doi.org/10.1021/acsami.6b11465
82.P. H. Chen, T. C. Chang*, K. C. Chang, T. M. Tsai*, C. H. Pan, C. C. Shih, C. H. Wu, C. C. Yang, Y. T. Su, C. Y. Lin, Y. T. Tseng, M. C. Chen, R. C. Wang, C. C. Leu, K. H. Chen, I. Lo, J. C. Zheng and S. M. Sze, “Obtaining Lower Forming Voltage and Self-Compliance Current by Using a Nitride Gas/Indium-Tin Oxide Insulator in Resistive Random Access Memory”, IEEE Transactions on Electron Devices, 2016, 63(12), 4769-4775. (IF: 3.221)
DOI:10.1109/TED.2016.2619704
Article web link：https://doi.org/10.1109/TED.2016.2619704
81.P. H. Chen, T. C. Chang*, T. M. Tsai*, K. C. Chang, T. J. Chu, C. C. Shih, C. Y. Lin, P. H. Chen, H. Q. Wu, N. Deng, H. Qian and S. M. Sze, “Ultralow Power Resistance Random Access Memory Device and Oxygen Accumulation Mechanism in an Indilm-Tin-Oxide Electrode”, IEEE Transactions on Electron Devices, 2016, 63(12),4737-4743. (IF:3.221)
DOI:10.1109/TED.2016.2615807
Article web link：https://doi.org/10.1109/TED.2016.2615807
80.N. C. Chuang*, J. T. Lin, T. C. Chang, T. M. Tsai, K. C. Chang and C. W. Wu, “The Film Thickness Effect on Electrical Conduction Mechanisms and Characteristics of the Ni-Cr Thin Film Resistor”, IEEE Journal of the Electron Devices Society, 2016, 4(6), 441-444. (IF:2.523)
DOI:10.1109/JEDS.2016.2598189
Article web link：https://doi.org/10.1109/JEDS.2016.2598189
79.P. H. Chen, K. C. Chang, T. C. Chang*, T. M. Tsai*, C. H. Pan, Y. T. Su, C. H. Wu, W. C. Su, C. C. Yang, M. C. Chen, C. H. Tu, K. H. Chen, I. Lo, J. C. Zheng and S. M. Sze, “Modifying Indium-Tin-Oxide by Gas Cosputtering for Use as an Insulator in Resistive Random Access Memory”, IEEE Transactions on Electron Devices, 2016, 63(11), 4288-4294. (IF:3.221)
DOI:10.1109/TED.2016.2609642
Article web link：https://doi.org/10.1109/TED.2016.2609642
78.C. H. Pan, T. C. Chang*, T. M. Tsai, K. C. Chang*, P. H. Chen, S. W. Chang-Chien, M. C. Chen, H. C. Huang, H. Q. Wu and N. Deng, “Engineering Interface-Type Resistance Switching Based on Forming Current in ITO/Ga2O3:ITO/TiN Resistance Random Access Memory: Conduction Mechanisms, Temperature Effects, and Electrode Influence”. Applied Physics Letters, 2016, 109(18), 183509. (IF:3.971)
DOI:10.1063/1.4966181
Article web link：https://doi.org/10.1063/1.4966181
77.C. C. Shih, W. J. Chen, K. C. Chang, T. C. Chang*, T. M. Tsai*, T. J. Chu, Y. T. Tseng, C. H. Wu, W. C. Su, M. C. Chen, H. C. Huang, M. H. Wang, J. H. Chen, J. C. Zheng and S. M. Sze, “Ultra-Low Switching Voltage Induced by Inserting SiO2 Layer in Indium-Tin-Oxide-Based Resistance Random Access Memory”. IEEE Electron Device Letters. 2016, 37(10), 1276-1279. (IF:4.816)
DOI:10.1109/LED.2016.2599218
Article web link：https://doi.org/10.1109/LED.2016.2599218
76.C. H. Pan, T. C. Chang*, T. M. Tsai, K. C. Chang, T. J. Chu, P. H. Chen, M. C. Chen and S. M. Sze, “Adjustable Built-in Resistor on Oxygen-Vacancy-Rich Electrode-Capped Resistance Random Access Memory”, Applied Physics Express, 2016, 9(10), 104201. (IF:2.819)
DOI:10.7567/APEX.9.104201
Article web link：https://doi.org/10.7567/APEX.9.104201
75.C. H. Pan, T. C. Chang*, T. M. Tsai, K. C. Chang, T. J. Chu, W. Y. Lin, M. C. Chen and S. M. Sze, “Confirmation of Filament Dissolution Behavior by Analyzing Electrical Field Effect During Reset Process in Oxide-Based RRAM”, Applied Physics Letters, 2016, 109(13), 133503. (IF:3.917)
DOI:10.1063/1.4963672
Article web link：https://doi.org/10.1063/1.4963672
74.H. R. Chen, Y. C. Chen*, T. C. Chang*, K. C. Chang, T. M. Tsai, T. J. Chu, C. C. Shih, N. C. Chuang and K. Y. Wang, “Mechanisms of Low-Temperature Nitridation Technology on a TaN Thin Film Resistor for Temperature Sensor Applications”, Nanoscale Research Letters, 2016, 11,275. (IF:5.418)
DOI:10.1186/s11671-016-1480-z
Article web link：https://doi.org/10.1186/s11671-016-1480-z
73.T. C. Chang*, K. C. Chang, T. M. Tsai, T. J. Chu and S. M. Sze, “Resistance Random Access Memory”, Materials Today, 2016,19(5), 254-264. (IF:26.943)
DOI:DOI：10.1016/j.mattod.2015.11.009
Article web link：https://doi.org/DOI：10.1016/j.mattod.2015.11.009
72.F. Y. Jin, K. C. Chang, T. C. Chang*, T. M. Tsai, C. H. Pan, C. Y. Lin, P. H. Chen, M. C. Chen, H. C. Huang, I. Lo, J. C. Zheng and S. M. Sze, “Reducing Operation Voltages by Introducing a Low-K Switching Layer in Indium-Tin-Oxide-Based Resistance Random Access Memory”, Applied Physics Express, 2016, 9(6), 061501. (IF:2.819)
DOI:10.7567/APEX.9.061501
Article web link：https://doi.org/10.7567/APEX.9.061501
71.H. X. Zheng, T. C. Chang*, K. C. Chang, T. M. Tsai, C. C. Shih, R. Zhang, K. H. Chen, M. H. Wang, J. C. Zheng, I. Lo, C. H. Wu, Y. T. Tseng and S. M. Sze, “Complementary Resistive Switching Behavior for Conductive Bridge Random Access Memory”, Applied Physics Express, 2016, 9(6), 064201. (IF:2.819)
DOI:10.7567/APEX.9.064201
Article web link：https://doi.org/10.7567/APEX.9.064201
70.P. H. Chen, K. C. Chang, T. C. Chang*, T. M. Tsai*, C. H. Pan, C. Y, Lin, F. Y. Jin, M. C. Chen, H. C. Huang, M. H. Wang, I. Lo, J. C. Zheng and S. M. Sze, “Improving Performance by Doping Gadolinium into the Indium-Tin-Oxide Electrode in HfO2-Based Resistive Random Access Memory”, IEEE Electron Device Letters, 2016, 37(5), 584-587. (IF:4.816)
DOI:10.1109/LED.2016.2548499
Article web link：https://doi.org/10.1109/LED.2016.2548499
69.K. H. Chen*, K. C. Chang, T. C. Chang*, T. M. Tsai, S. P. Liang, T. F. Young, Y. E. Syu and S. M. Sze, “Illumination Effect on Bipolar Properties of Gd:SiO2 RRAM Devices Using Transparent Indium Tin Oxide Electrode”, Nanoscale Research Letters, 2016, 11, 224. (IF:5.418)
DOI:10.1186/s11671-016-1431-8
Article web link：https://doi.org/10.1186/s11671-016-1431-8
68.T. M. Tsai, K. C. Chang*, T. C. Chang*, R. Zhang, T. Wang, C. H. Pan, K. H. Chen, H. M. Chen, M. C. Chen, T. Y. Tseng, P. H. Chen, I. Lo, J. C. Zheng, J. C. Lou and S. M. Sze, “Resistive Switching Mechanism of Oxygen-Rich Indium Tin Oxide Resistance Random Access Memory”, IEEE electron Device Letters, 2016, 37(4), 408-411. (IF: 4.816)
DOI:10.1109/LED.2016.2532883
Article web link：https://doi.org/10.1109/LED.2016.2532883
67.Y. F. Chang*, B. Fowler, Y. C. Chen, F. Zhou, C. H. Pan, K. C. Chang, T. M. Tsai, T. C. Chang, S. M. Sze and J. C. Lee, "A synaptic device built in one diode-one resistor (1D-1R) architecture with intrinsic SiOx-based resistive switching memory", PHYSICAL SCIENCES REVIEWS, 2016, 1(4), 2365-6581. (IF: 无)
66.L. Xu, Q. Chen, L. Liao*, X. Q. Liu, T. C. Chang, K. C. Chang, T. M. Tsai, C. Z. Jiang, J. L. Wang* and J. C. Li, “Rational Hydrogenation for enhanced Mobility and High Reliability on ZnO-Based Thin Film Transistors: From Simulation to Experiment”, ACS Applied Materials & Interfaces, 2016, 8(8), 5408-5415. (IF:10.383)
DOI:10.1021/acsami.5b10220
Article web link：https://doi.org/10.1021/acsami.5b10220
65.P. H. Chen, K. C. Chang, T. C. Chang*, T. M. Tsai*, C. H. Pan, T. J. Chu, M. C. Chen, H. C. Huang, I. Lo, J. C. Zheng and S. M. Sze, “Bulk Oxygen-Ion Storage in Indium-Tin-Oxide Electrode for Improved Performance of HfO2-Based Resistive Random Access Memory”, IEEE Electron Device Letters, 2016, 37(3), 280-283. (IF:4.816)
DOI:10.1109/LED.2016.2522085
Article web link：https://doi.org/10.1109/LED.2016.2522085
64.K. H. Chen*, K. C. Chang, T. C. Chang, T. M. Tsai, K. H. Liao, Y. E. Syu and S. M. Sze, “Effect of Different Constant Compliance Current for Hopping Conduction Distance Properties of the Sn:SiOx Thin Film RRAM Devices”, Applied Physics A-Materials Science & Processing, 2016, 122(3), 228. (IF:2.983)
DOI:10.1007/s00339-016-9768-5
Article web link：https://doi.org/10.1007/s00339-016-9768-5
63.P. H. Chen, K. C. Chang, T. C. Chang*, T. M. Tsai, C. H. Pan, C. Y. Lin, F. Y. Jin, M. C. Chen, H. C. Huang, I. Lo, J. C. Zhang and S. M. Sze, “Effects of Erbium Doping of Indium Tin Oxide Electrode in Resistive Random Access Memory”, Applied Physics Express, 2016, 9(3), 034202. (IF:2.819)
DOI:10.7567/APEX.9.034202
Article web link：https://doi.org/10.7567/APEX.9.034202
62.K. H. Chen*, K. C. Chang, T. C. Chang*, T. M. Tsai, S. P. Liang, T. F. Young, Y. E. Syu and S. M. Sze, “Improvement of Bipolar Switching Properties of Gd:SiOx RRAM Devices on Indium Tin Oxide Electrode by Low-Temperature Supercritical CO2 Treatment”. Nanoscale Research Letters, 2016, 11, 52. (IF:5.418)
DOI:10.1186/s11671-016-1272-5
Article web link：https://doi.org/10.1186/s11671-016-1272-5
61.C. H. Pan, K. C. Chang, T. C. Chang*, T. M. Tsai, R. Zhang, S. P. Liang, C. Y. Lin, M. C. Chen, P. H. Chen, Y. E. Syu, H. C. Huang and S. M. Sze, “Communication-Effects of Oxygen Concentration Gradient on Resistive Switching Behavior in Oxygen Vacancy-Rich Electrodes”, ECS Journal of Solid State Science and Technology, 2016, 5(5), Q115-Q118. (IF:2.483)
DOI:10.1149/2.0061605jss
Article web link：https://doi.org/10.1149/2.0061605jss
2015
60.C. C. Kuo, I. C. Chen, C. C. Shih, K. C. Chang, C. H. Huang, P. H. Chen, T. C. Chang*, T. M. Tsai, J. S. Chang and Huang J.C, “Galvanic Effect of Au-Ag Electrodes for Conductive Bridging Resistive Switching Memory”, IEEE Electron Device Letters, 2015, 36(12), 1321-1324. (IF:4.816)
DOI:10.1109/LED.2015.2496303
Article web link：https://doi.org/10.1109/LED.2015.2496303
59.J. Chen, K. C. Chang, T. C. Chang*, T. M. Tsai, C. H. Pan, R. Zhang, J. C. Lou, T. J. Chu, C. H. Wu, M. C. Chen, Y. C. Hung, Y. E. Syu, J. C. Zheng and S. M. Sze, “Nitrogen Buffering Effect on Oxygen in Indium-Tin-Oxide-Capped Resistive Random Access Memory With NH3Treatment”, IEEE Electron Device Letters, 2015, 36(11), 1138-1141. (IF: 4.816)
DOI:10.1109/LED.2015.2477163
Article web link：https://doi.org/10.1109/LED.2015.2477163
58.J. C. Jhu*, T. C. Chang, K. C. Chang, C. Y. Yang, W. C. Chou, C. H. Chou and W. C. Chung, “Investigation of Hydration Reaction-Induced Protons Transport in Etching-Stop a-InGaZnO Thin-Film Transistors”, IEEE Electron Device Letters, 2015, 36(10), 1050-1052. (IF: 4.816)
DOI:10.1109/LED.2015.2466103
Article web link：https://doi.org/10.1109/LED.2015.2466103
57.W. Zhang, Y. Hu*, T. C. Chang, K. C. Chang, T. M. Tsai, H. L. Chen, Y. T. Su, T. J. Chu, M. C. Chen, H. C. Huang, W. C. Su, J. C. Zheng, Y. C. Hung and S. M. Sze, “An Electronic Synapse Device Based on Solid Electrolyte Resistive Random Access Memory”, IEEE Electron Device Letters, 2015, 36(8), 772-774. (IF: 4.816)
DOI:10.1109/LED.2015.2448756
Article web link：https://doi.org/10.1109/LED.2015.2448756
56.W. Zhang, Y. Hu, T. C. Chang*, T. M. Tsai, K. C. Chang, H. L. Chen, Y. T. Su, R. Zhang, Y. C. Hung, Y. E. Syu, M. C. Chen, J. C. Zheng, H. C. Lin and S. M. Sze, “Mechanism of Triple Ions Effect in GeSO Resistance Random Access Memory”, IEEE Electron Device Letters, 2015, 36(6), 552-554. (IF:4.816)
DOI:10.1109/LED.2015.2424996
Article web link：https://doi.org/10.1109/LED.2015.2424996
55.K. C. Chang*, T. M. Tsai, T. C. Chang, R. Zhang, K. H. Chen, J. H. Chen, M. C. Chen, H. C. Huang, W. Zhang, C. Y. Lin, Y. T. Tseng, H. C. Lin, J. C. Zheng and S. M. Sze, “Improvement of Resistive Switching Characteristic in Silicon Oxide-Based RRAM Through Hydride-Oxidation on Indium Tin Oxide Electrode by Supercritical CO2 Fluid”, IEEE Electron Device Letters, 2015, 36(6), 558-560. (IF: 4.816)
DOI:10.1109/LED.2015.2426055
Article web link：https://doi.org/10.1109/LED.2015.2426055
54.C. Y. Lin, K. C. Chang, T. C. Chang*, T. M. Tsai, C. H. Pan, R.Zhang, K. H. Liu, H. M. Chen, Y. T. Tseng, Y. C. Hung, Y. E. Syu, J. C. Zheng, Y. L. Wang, W. Zhang and S. M. Sze, “Effects of Varied Negative Stop Voltages on Current Self-Compliance in Indium Tin Oxide Resistance Random Access Memory”, IEEE Electron Device Letters, 2015, 36(6), 564-566. (IF: 4.816)
DOI:10.1109/LED.2015.2424226
Article web link：https://doi.org/10.1109/LED.2015.2424226
53.K. H. Chen*, K. C. Chang, T. C. Chang, T. M. Tsai, K. H. Liao, Y. E. Syu and S. M. Sze, “Hopping Conduction Properties of the Sn:SiO(x)Thin-Film Resistance Random Access Memory Devices Induced by Rapid Temperature Annealing Procedure”, Applied Physics A-Materials Science & Processing, 2015, 119(4), 1609-1613. (IF:2.983)
DOI:10.1007/s00339-015-9144-x
Article web link：https://doi.org/10.1007/s00339-015-9144-x
52.Y. T. Tseng, T. M. Tsai, T. C. Chang, C. C. Shih, K. C. Chang*, R. Zhang, K. H. Chen, J. H. Chen, Y. C. Li, C. Y. Lin, Y. C. Hung, Y. E. Syu, J. C. Zheng and S. M. Sze, “Complementary resistive switching behavior induced by varying forming current compliance in resistance random access memory”, Applied Physics Letters, 2015, 106(21), 213505. (IF:3.917)
DOI:10.1063/1.4921239
Article web link：https://doi.org/10.1063/1.4921239
51.K. C. Chang*, T. C. Chang, T. M. Tsai, R. Zhang, Y. C. Hung, Y. E. Syu, Y. F. Chang, M. C. Chen, T. J. Chu, H. L. Chen, C. H. Pan, C. C. Shih, J. C. Zheng and S. M. Sze, “Physical and chemical mechanisms in oxide-based resistance random access memory”, Nanoscale Research Letters, 2015, 10(1), 1-27. (IF:5.418)
DOI:10.1186/s11671-015-0740-7
Article web link：https://doi.org/10.1186/s11671-015-0740-7
50.H. R. Chen, Y. C. Chen*, T. C. Chang, K. C. Chang, T. M. Tsai, T. J. Chu, C. C. Shih, Y. T. Tseng, C. Y. Lin and H. C. Lin, “The Manipulation of Temperature Coefficient Resistance of TaN Thin-Film Resistor by Supercritical CO2 Fluid”, IEEE Electron Device Letters, 2015, 36(3), 271-273. (IF:4.816)
DOI:10.1109/LED.2015.2396196
Article web link：https://doi.org/10.1109/LED.2015.2396196
2014
49.T. J. Chu, T. M. Tsai*, T. C. Chang, K. C. Chang, C. H. Pan, K. H. Chen, J. H. Chen, H. L. Chen, H. C. Huang, C. C. Shih, Y. E. Syu, J. C. Zheng and S. M. Sze, “Ultra-high Resistive Switching Mechanism Induced by Oxygen Ion Accumulation on Nitrogen-Doped Resistive Random Access Memory”, Applied Physics Letters, 2014, 105(22), 223514. (IF:3.917)
DOI:10.1063/1.4902503
Article web link：https://doi.org/10.1063/1.4902503
48.X. Huang, K. C. Chang, T. C. Chang*, T. M. Tsai, C. C. Shih, R. Zhang, S. Y. Huang, K. H. Chen, J. H. Chen, H. J. Wang, W. J. Chen, F. Y. Zhang, C. Chen and S. M. Sze, “Controllable Set Voltage in bilayer ZnO:SiO2/ZnOx Resistance Random Access Memory by Oxygen Concentration Gradient Manipulation”, IEEE Electron Device Letters, 2014, 35(12), 1227-1229. (IF: 4.816)
DOI:10.1109/LED.2014.2360525
Article web link：https://doi.org/10.1109/LED.2014.2360525
47.Y. J. Chen, K. C. Chang, T. C. Chang*, H. L. Chen, T. F. Young, T. M. Tsai, R. Zhang, T. J. Chu, J. F. Ciou, J. C. Lou, K. H. Chen, J. H. Chen, J. C. Zheng and S. M. Sze, “Resistance Switching Induced by Hydrogen and Oxygen in Diamond-Like Carbon Memristor”, IEEE Electron Device Letters, 2014, 35(10), 1016-1018. (IF: 4.816)
DOI:10.1109/LED.2014.2343331
Article web link：https://doi.org/10.1109/LED.2014.2343331
46.H. L. Chen, T. C. Chang*, T. F. Young, T. M. Tsai, K. C. Chang, R. Zhang, S. Y. Huang, K. H. Chen, J. C. Lou, M. C. Chen, C. C. Shih, S. Y. Huang and J. H. Chen, “Ultra-Violet Light Enhanced Super Critical Fluid Treatment in In-Ga-Zn-O Thin Film Transistor”, Applied Physics Letters, 2014, 104(24), 243508. (IF: 3.917)
DOI:10.1063/1.4883899
Article web link：https://doi.org/10.1063/1.4883899
45.G. W. Chang*, T. C. Chang, J. C. Jhu, T. M. Tsai, K. C. Chang, Y. E. Syu, Y. H. Tai, F. Y. Jian and Y. C. Hung, “Temperature-Dependent Instability of Bias Stress in InGaZnO Thin-Film Transistors”, IEEE Transactions on Electron Devices, 2014, 61(6), 2119-2124. (IF:3.221)
DOI:10.1109/TED.2014.2319105
Article web link：https://doi.org/10.1109/TED.2014.2319105
44.R. Zhang, K. C. Chang, T. C. Chang*, T. M. Tsai, S. Y. Huang, W. J. Chen, K. H. Chen, J. C. Lou, J. H. Chen, T. F. Young, M. C. Chen, H. L. Chen, S. P. Liang, Y. E. Syu and S. M. Sze, “Characterization of Oxygen Accumulation in Indium-Tin-Oxide for Resistance Random Access Memory”, IEEE Electron Device Letters, 2014, 35(6), 630-632. (IF:4.816)
DOI:10.1109/LED.2014.2316806
Article web link：https://doi.org/10.1109/LED.2014.2316806
43.C. C. Shih, K. C. Chang, T. C. Chang*, T. M. Tsai, R. Zhang, J. H. Chen, K. H. Chen, T. F. Young, H. L. Chen, J. C. Lou, T. J. Chu, S. Y. Huang, D. H. Bao and S. M. Sze, “Resistive Switching Modification by Ultraviolet Illumination in Transparent Electrode Resistive Random Access Memory”, IEEE Electron Device Letters, 2014, 35(6), 633-635. (IF: 4.816)
DOI:10.1109/LED.2014.2316673
Article web link：https://doi.org/10.1109/LED.2014.2316673
42.K. C. Chang*, T. M. Tsai, T. C. Chang, K. H. Chen, R. Zhang, Z. Y. Wang, J. H. Chen, T. F. Young, M. C. Chen, T. J. Chu, S. Y. Huang, Y. E. Syu, D. H. Bao and S. M. Sze, “Dual Ion Effect of The Lithium Silicate Resistance Random Access Memory”, IEEE Electron Device Letters, 2014, 35(5), 530-532. (IF: 4.816)
DOI:10.1109/LED.2014.2311295
Article web link：https://doi.org/10.1109/LED.2014.2311295
41.H. R. Chen, Y. C. Chen*, T. C. Chang, K. C. Chang, T. M. Tsai, T. J. Chu, C. C. Shih, N. C. Chuang and K. Y. Wang, “Surface Scattering Mechanisms of Tantalum Nitride Thin Film Resistor”, Nanoscale Research Letters, 2014, 9(1), 1-5. (IF:5.418)
DOI:10.1186/1556-276X-9-177
Article web link：https://doi.org/10.1186/1556-276X-9-177
40.K. H. Liu, T. C. Chang*, K. C. Chang, T. M. Tsai, T. Y. Hsieh, M. C. Chen, B. L. Yeh and W. C. Chou, “Investigation of On-Current Degradation Behavior Induced by Surface Hydrolysis Effect Under Negative Gate Bias Stress in Amorphous InGaZnO Thin-Film Transistors”, Applied Physics Letters, 2014, 104(10), 103501. (IF:3.917)
DOI:10.1063/1.4863682
Article web link：https://doi.org/10.1063/1.4863682
39.C. Ye, C. Zhang, T. M. Tsai, K. C. Chang, M. C. Chen, T. C. Chang, T. F. Deng and H. Wang*, “Low-Power Bipolar Resistive Switching TiN/HfO2/ITO Memory with Self-Compliance Current Phenomenon”, Applied Physics Express, 2014, 7(3), 034101. (IF:2.819)
DOI:10.7567/APEX.7.034101
Article web link：https://doi.org/10.7567/APEX.7.034101
38.L. Ji, Y. F. Chang*, B. Fowler, Y. C. Chen, T. M. Tsai, K. C. Chang, M. C. Chen, T. C. Chang, S. M. Sze, E. T. Yu and J. C. Lee, “Integrated One Diode-One Resistor Architecture in Nanopillar SiOx Resistive Switching Memory by Nanosphere Lithography”, Nano Letters, 2014, 14(2), 813-818. (IF:12.262)
DOI:10.1021/nl404160u
Article web link：https://doi.org/10.1021/nl404160u
37.T. J. Chu*, T. M. Tsai, T. C. Chang, K. C. Chang, R. Zhang, K.H. Chen, J. H. Chen, T. F. Young, J. W. Huang, J. C. Lou, M. C. Chen, S. Y. Huang, H. L. Chen, Y. E. Syu, D. H. Bao and S. M. Sze, “Tri-Resistive Switching Behavior of Hydrogen Induced Resistance Random Access Memory”, IEEE Electron Device Letters, 2014, 35(2), 217-219. (IF:4.816)
DOI:10.1109/LED.2013.2295378
Article web link：https://doi.org/10.1109/LED.2013.2295378
36.Y. J. Chen, H. L. Chen, T. F. Young*, T. C. Chang, T. M. Tsai, K. C. Chang, R. Zhang, K. H. Chen, J. C. Lou, T. J. Chu, J. H. Chen, D. H. Bao and S. M. Sze, “Hydrogen Induced Redox Mechanism in Amorphous Carbon Resistive Random Access Memory”, Nanoscale Research Letters, 2014, 9(1), 1-5. (IF:5.418)
DOI:10.1186/1556-276X-9-52
Article web link：https://doi.org/10.1186/1556-276X-9-52
2013
35.R. Zhang, T. M. Tsai*, T. C. Chang, K. C. Chang, K. H. Chen, J. C. Lou, T. F. Young, J. H. Chen, S. Y. Huang, M. C. Chen, C. C. Shih, H. L. Chen, J. H. Pan, C. W. Tung, Y. E. Syu and S. M. Sze, “Mechanism of Power Consumption Inhibitive Multi-layer Zn:SiO2/SiO2 Structure Resistance Random Access Memory”, Journal of Applied Physics, 2013, 114(23), 234501. (IF:2.877)
DOI:10.1063/1.4843695
Article web link：https://doi.org/10.1063/1.4843695
34.K. C. Chang, J. W. Huang*, T. C. Chang, T. M. Tsai, K. H. Chen, T. F. Young, J. H. Chen, R. Zhang, J. C. Lou, S. Y. Huang, Y. C. Pan, H. C. Huang, Y. E. Syu, D. S. Gan, D. H. Bao and S. M. Sze, “Space Electric Field Concentrated Effect for Zr:SiO2 RRAM Devices Using Porous SiO2 Buffer Layer”, Nanoscale Research Letters, 2013, 8(1), 1-5. (IF: 5.418)
DOI:10.1186/1556-276X-8-523
Article web link：https://doi.org/10.1186/1556-276X-8-523
33.R. Zhang, K. C. Chang, T. C. Chang*, T. M. Tsai, K. H. Chen, J. C. Lou, J. H. Chen, T. F. Young, C. C. Shih, Y. L. Yang, Y. C. Pan, T. J. Chu, S. Y. Huang, C. H. Pan, Y. T. Su, Y. E. Syu and S. M. Sze, “High Performance of Graphene Oxide-Doped Silicon Oxide-based Resistance Random Access Memory”, Nanoscale Research Letters, 2013, 8(1), 1-6. (IF: 5.418)
DOI:10.1186/1556-276X-8-523
Article web link：https://doi.org/10.1186/1556-276X-8-523
32.Y. T. Su*, K. C. Chang, T. C. Chang, T. M. Tsai, R. Zhang, J. C. Lou, J. H. Chen, T. F. Young, K. H. Chen, B. H. Tseng, C. C. Shih, Y. L. Yang, M. C. Chen, T. J. Chu, C. H. Pan, Y. E. Syu and S. M. Sze, “Characteristics of Hafnium Oxide Resistance Random Access Memory with Different Setting Compliance Current”, Applied Physics Letters, 2013, 103(16), 163502. (IF:3.917)
DOI:10.1063/1.4825104
Article web link：https://doi.org/10.1063/1.4825104
31.G. W. Chang, T. C. Chang*, J. C. Jhu, T. M. Tsai, Y. E. Syu, K. C. Chang, F. Y. Jian, Y. C. Hung and Y. H. Tai, “N2O Plasma Treatment Suppressed Temperature-dependent Sub-threshold Leakage Current of Amorphous Indium-gallium-zinc-oxide Thin Film Transistors”, Surface & Coatings Technology, 2013, 231, 281-284. (IF:3.754)
DOI:10.1016/j.surfcoat.2012.04.086
Article web link：https://doi.org/10.1016/j.surfcoat.2012.04.086
30.K. C. Chang, T. M. Tsai*, R. Zhang, T. C. Chang, K. H. Chen, J. H. Chen, T. F. Young, J. C. Lou, T. J. Chu, C. C. Shih, J. H. Pan, Y. T. Su, Y. E. Syu, C. W. Tung, M. C. Chen, J. J. Wu, Y. Hu and S. M. Sze, “Electrical Conduction Mechanism of Zn:SiOx Resistance Random Access Memory with Supercritical CO2 Fluid Process”, Applied Physics Letters, 2013, 103(8), 083509. (IF:3.917)
DOI:10.1063/1.4819162
Article web link：https://doi.org/10.1063/1.4819162
29.Y. L. Yang*, T. F. Young, T. C. Chang, J. H. Hsu, T. M. Tsai, F. Y. Jian and K. C. Chang, “Mechanical Stress Influence on Electronic Transport in Low-kappa SiOC Dielectric Dual Damascene Capacitor”, IEEE Electron Device Letters, 2013, 34(8), 1056-1058. (IF:4.816)
DOI:10.1109/LED.2013.2269831
Article web link：https://doi.org/10.1109/LED.2013.2269831
28.Y. E. Syu*, R. Zhang, T. C. Chang, T. M. Tsai, K. C. Chang, J. C. Lou, T. F. Young, J. H. Chen, M. C. Chen, Y. L. Yang, C. C. Shih, T. J. Chu, J. Y. Chen, C. H. Pan, Y. T. Su, H. C. Huang, D. S. Gan and S. M. Sze, “Endurance Improvement Technology With Nitrogen Implanted in the Interface of WSiOx Resistance Switching Device”, IEEE Electron Device Letters, 2013, 34(7), 864-866. (IF: 4.816)
DOI:10.1109/LED.2013.2260125
Article web link：https://doi.org/10.1109/LED.2013.2260125
27.T. M. Tsai*, K. C. Chang, R. Zhang, T. C. Chang, J. C. Lou, J. H. Chen, T. F. Young, B. H. Tseng, C. C. Shih, Y. C. Pan, M. C. Chen, J. H. Pan, Y. E. Syu and S. M. Sze, “Performance and Characteristics of Double Layer Porous Silicon Oxide Resistance Random Access Memory”, Applied Physics Letters, 2013, 102(25), 253509. (IF: 3.917)
DOI:10.1063/1.4812474
Article web link：https://doi.org/10.1063/1.4812474
26.J. W. Huang*, R. Zhang, T. C. Chang, T. M. Tsai, K. C. Chang, J. C. Lou, T. F. Young, J. H. Chen, H. L. Chen, Y. C. Pan, X. Huang, F. Y. Zhang, Y. E. Syu and S. M. Sze, “The Effect of High/Low Permittivity in Bilayer HfO2/BN Resistance Random Access Memory”, Applied Physics Letters, 2013, 102(20), 203507. (IF: 3.917)
DOI:10.1063/1.4807577
Article web link：https://doi.org/10.1063/1.4807577
25.Y. L. Yang*, T. F. Young, T. C. Chang, F. Y. Shen, J. H. Hsu, T. M. Tsai, K. C. Chang and H. L. Chen, “Mechanical Stress Influence on Electronic Transport in Low-k SiOC Dielectric Single Damascene Capacitor”, Applied Physics Letters, 2013, 102(19), 192912. (IF: 3.971)
DOI:10.1063/1.4807010
Article web link：https://doi.org/10.1063/1.4807010
24.K. C. Chang*, C. H. Pan, T. C. Chang, T. M. Tsai, R. Zhang, J. C. Lou, T. F. Young, J. H. Chen, C. C. Shih and T. J. Chu, “Hopping Effect of Hydrogen-Doped Silicon Oxide Insert RRAM by Supercritical CO2 Fluid Treatment”, IEEE Electron Device Letters, 2013, 34(5), 617-619. (IF:4.816)
DOI:10.1109/LED.2013.2251995
Article web link：https://doi.org/10.1109/LED.2013.2251995
23.K. C. Chang*, R. Zhang, T. C. Chang, T. M. Tsai, J. C. Lou, J. H. Chen, T. F. Young, M. C. Chen, Y. L. Yang and Y. C. Pan, “Origin of Hopping Conduction in Graphene-Oxide-Doped Silicon Oxide Resistance Random Access Memory Devices”, IEEE Electron Device Letters, 2013, 34(5), 677-679. (IF:4.816)
DOI:10.1109/LED.2013.2250899
Article web link：https://doi.org/10.1109/LED.2013.2250899
22.Y. E. Syu*, T. C. Chang, J. H. Lou, T. M. Tsai, K. C. Chang, M. J. Tsai, Y. L. Wang, M. Liu and S. M. Sze, “Atomic-level quantized reaction of HfOx memristor”, Applied Physics Letters, 2013, 102(17). (IF: 3.971)
DOI:10.1063/1.4802821
Article web link：https://doi.org/10.1063/1.4802821
21.K. H. Chen*, R. Zhang, T. C. Chang, T. M. Tsai, K. C. Chang, J. C. Lou, T. F. Young, J. H. Chen, C. C. Shih and C. W. Tung, “Hopping Conduction Distance Dependent Activation Energy Characteristics of Zn:SiO2 Resistance Random Access Memory Devices”, Applied Physics Letters, 2013, 102(13), 133503. (IF: 3.971)
DOI:10.1063/1.4799655
Article web link：https://doi.org/10.1063/1.4799655
20.T. J. Chu*, T. C. Chang, T. M. Tsai, H. H. Wu, J. H. Chen, K. C. Chang, T. F. Young, K. H. Chen, Y. E. Syu and G. W. Chang, “Charge Quantity Influence on Resistance Switching Characteristic During Forming Process”, IEEE Electron Device Letters, 2013, 34 (4), 502-504. (IF: 4.816)
DOI:10.1109/LED.2013.2242843
Article web link：https://doi.org/10.1109/LED.2013.2242843
19.K. C. Chang*, T. M. Tsai, T. C. Chang, H. H. Wu, K. H. Chen, J. H. Chen, T. F. Young, T. J. Chu, J. Y. Chen and C. H. Pan, “Low Temperature Improvement Method on Zn:SiOx Resistive Random Access Memory Devices”, IEEE Electron Device Letters, 2013, 34 (4), 511-513. (IF: 4.816)
DOI:10.1109/LED.2013.2248075
Article web link：https://doi.org/10.1109/LED.2013.2248075
18.K. C. Chang*, T. M. Tsai, T. C. Chang, H. H. Wu, J. H. Chen, Y. E. Syu, G.W. Chang, T. J. Chu, G. R. Liu and Y. T. Su, “Characteristics and Mechanisms of Silicon-Oxide-Based Resistance Random Access Memory”, IEEE Electron Device Letters, 2013, 34 (3), 399-401. (IF:4.816)
DOI:10.1109/LED.2013.2241725
Article web link：https://doi.org/10.1109/LED.2013.2241725
17.M. C. Chen, T. C. Chang*, Y. C. Chiu, S. C. Chen, S. Y. Huang, K. C. Chang, T. M. Tsai, K. H. Yang, S. M. Sze and M. J. Tsai, “The Resistive Switching Characteristics in TaON Films for Nonvolatile Memory Applications”, Thin Solid Films, 2013, 528, 224–228. (IF:2.358)
DOI:10.1016/j.tsf.2012.09.081
Article web link：https://doi.org/10.1016/j.tsf.2012.09.081
2012
16.T. M. Tsai*, K. C. Chang, T. C. Chang, G. W. Chang, Y. E. Syu, Y. T. Su, G. R. Liu, K. H. Liao, M. C. Chen, H. C. Huang, Y. H. Tai, D. S. Gan, C. Ye, H. Wang and S. M. Sze, “Origin of Hopping Conduction in Sn-Doped Silicon Oxide RRAM With Supercritical CO2 Fluid Treatment”, IEEE Electron Device Letters, 2012, 33(12), 1693-1695. (IF:4.816)
DOI:10.1109/LED.2012.2217932
Article web link：https://doi.org/10.1109/LED.2012.2217932
15.T. M. Tsai*, K. C. Chang, T. C. Chang, Y. E. Syu, S. L. Chuang, G. W. Chang, G. R. Liu, M. C. Chen, H. C. Huang, S. K. Liu, Y. H. Tai, D. S. Gan, Y. L. Yang, T. F. Young, B. H. Tseng, K. H. Chen, M. J. Tsai, C. Ye, H. Wang and S. M. Sze, “Bipolar Resistive RAM Characteristics Induced by Nickel Incorporated into Silicon Oxide Dielectrics for IC Applications”, IEEE Electron Device Letters, 2012, 33(12), 1696-1698. (IF:4.816)
DOI:10.1109/LED.2012.2217933
Article web link：https://doi.org/10.1109/LED.2012.2217933
14.T. M. Tsai*, K. C. Chang, T. C. Chang, Y. E. Syu, K. H. Liao, B. H. Tseng and S. M. Sze, “Dehydroxyl Effect of Sn-doped Silicon Oxide Resistance Random Access Memory with Supercritical CO2 Fluid Treatment”, Applied Physics Letters, 2012, 101(11), 112906. (IF:3.971)
DOI:10.1063/1.4750235
Article web link：https://doi.org/10.1063/1.4750235
13.G. W. Chang*, T. C. Chang, J. C. Jhu, T. M. Tsai, Y. E. Syu, K. C. Chang, Y. H. Tai, F. Y. Jian and Y. C. Hung, “Suppress Temperature Instability of InGaZnO Thin Film Transistors by N2O Plasma Treatment, including Thermal-induced Hole Trapping Phenomenon under Gate Bias Stress”, Applied Physics Letters, 2012, 100(18), 182103. (IF:3.971)
DOI:10.1063/1.4709417
Article web link：https://doi.org/10.1063/1.4709417
12.G. W. Chang*, T. C. Chang, J. C. Jhu, T. M. Tsai, Y. E. Syu, K. C. Chang, Y. H. Tai, F. Y. Jian and Y. C. Hung, “Abnormal Subthreshold Leakage Current at High Temperature in InGaZnO Thin-Film Transistors”, IEEE Electron Device Letters, 2012, 33(4), 540-542. (IF:4.816)
DOI:10.1109/LED.2012.2182754
Article web link：https://doi.org/10.1109/LED.2012.2182754
11.Y. E. Syu*, T. C. Chang, T. M. Tsai, G. W. Chang, K. C. Chang, J. H. Lou, Y. H. Tai, M. J. Tsai, Y. L. Wang and S. M. Sze, “Asymmetric Carrier Conduction Mechanism by Tip Electric Field in WSiOX Resistance Switching Device”, IEEE Electron Device Letters, 2012, 33(3), 342-344. (IF:4.816)
DOI:10.1109/LED.2011.2182600
Article web link：https://doi.org/10.1109/LED.2011.2182600
10.Y. E. Syu*, T. C. Chang, T. M. Tsai, G. W. Chang, K. C. Chang, Y. H. Tai, M. J. Tsai, Y. L. Wang and S. M. Sze, “Silicon introduced effect on resistive switching characteristics of WOX thin films”, Applied Physics Letters, 2012, 100(2), 022904. (IF:3.971)
DOI:10.1063/1.3676194
Article web link：https://doi.org/10.1063/1.3676194
9.K. C. Chang*, T. M. Tsai, T. C. Chang, Y. E. Syu, K. H. Liao, S. L. Chuang, C. H. Li, D. S. Gan and S. M. Sze, “The Effect of Silicon Oxide Based RRAM with Tin Doping (vol 15, pg H65, 2012)”, ESC Solid State Letters, 2012, 1(2), X1-X1. (IF:1.184)
DOI:10.1149/2.022202ssl
Article web link：https://doi.org/10.1149/2.022202ssl
8.K. C. Chang*, T. M. Tsai, T. C. Chang, Y. E. Syu, S. L. Chuang, C. H. Li, D. S. Gan and S. M. Sze, “The Effect of Silicon Oxide Based RRAM with Tin Doping”, Electrochemical and Solid State Letters, 2012, 15(3), H65-H68. (IF:2.321)
DOI:10.1149/2.022202ssl
Article web link：https://doi.org/10.1149/2.022202ssl
2011
7.G. W. Chang, T. C. Chang*, Y. E. Syu, T. M. Tsai, K. C. Chang, C. H. Tu, F. Y. Jian, Y. C. Hung and Y. H. Tai, “Paraffin Wax Passivation Layer Improvements in Electrical Characteristics of Bottom Gate Amorphous Indium-gallium-zinc oxide Thin-film Transistors”, Thin Solid Films, 2011, 520(5), 1608-1611. (IF:2.358)
DOI:10.1016/j.tsf.2011.08.104
Article web link：https://doi.org/10.1016/j.tsf.2011.08.104
6.K. C. Chang*, T. M. Tsai, T. C. Chang, Y. E. Syu, C. C. Wang, S. L. Chuang, C. H. Li, D. S. Gan and S. M. Sze, “Reducing Operation Current of Ni-doped Silicon Oxide Resistance Random Access Memory by Supercritical CO2 Fluid Treatment”, Applied Physics Letters, 2011, 99(26), 263501. (IF:3.971)
DOI:10.1063/1.3671991
Article web link：https://doi.org/10.1063/1.3671991
5.Y. E. Syu*, T. C. Chang, T. M. Tsai, Y. C. Hung, K. C. Chang, M. J. Tsai, M. J. Kao and S. M. Sze, “Redox Reaction Switching Mechanism in RRAM Device With Pt/CoSiOX/TiN Structure”, IEEE Electron Device Letters, 2011, 32(4), 545-547. (IF:4.816)
DOI:10.1109/LED.2011.2104936
Article web link：https://doi.org/10.1109/LED.2011.2104936
4.Y. E. Syu*, T. C. Chang, C. T. Tsai, G. W. Chang, T. M. Tsai, K. C. Chang, Y. H. Tai, M. J. Tsai and S. M. Sze, “Improving Resistance Switching Characteristics with SiGeOx/SiGeON Double Layer for Nonvolatile Memory Applications”, Electrochemical and Solid State Letters, 2011, 14(10), H419-H421. (IF:2.321)
DOI:10.1149/1.3615823
Article web link：https://doi.org/10.1149/1.3615823
3.K. C. Chang*, T. M. Tsai, T. C. Chang, Y. E. Syu, H. C. Huang, Y. C. Hung, T. F. Young, D. S. Gan and N. J. Ho, “Low-Temperature Synthesis of ZnO Nanotubes by Supercritical CO2 Fluid Treatment”, Electrochemical and Solid State Letters, 2011, 14(9), K47-K50. (IF:2.321)
DOI:10.1149/1.3599420
Article web link：https://doi.org/10.1149/1.3599420
2009
2.M. C. Chen, T. C. Chang*, S. Y. Huang, K. C. Chang, H. C. Huang, S. C. Chen, J. Lu, D. S. Gan, N. J. Ho, T. F. Young, G. W. Jhang and Y. H. Tai, “Improvement of the performance of ZnO TFTs by low-temperature supercritical fluid technology treatment”, Surface & Coatings Technology, 2009, 204(6-7), 1112-1115. (IF:4.865)
DOI:10.1016/j.surfcoat.2009.09.050
Article web link：https://doi.org/10.1016/j.surfcoat.2009.09.050
1.M. C. Chen*, T. C. Chang, S. Y. Huang, K. C. Chang, H. W. Li, S. C. Chen, J. Lu and Y. Shi, “A low-temperature Method for Improving the Performance of Sputter-deposited ZnO Thin-film Transistors with Supercritical Fluid”, Applied Physics Letters, 2009, 94(16), 162111. (IF:3.971)
DOI:10.1063/1.3124658
Article web link：https://doi.org/10.1063/1.3124658
Conference
2021
17.H. C. Chin, L. Hu, K. C. Chang* and X. Lin*, “Supercritical Fluid of Amorphous-silicon Flexible Thin-film Transistors”, 2021 9th International Symposium on Next Generation Electronics (ISNE) (pp. 1-3)
16.Y. Zheng, K. C. Chang* and L. Li, “An Effective Method for Improving the Insulating Property of Polyvinyl Alcohol in Device with Supercritical Fluids”, 2021 9th International Symposium on Next Generation Electronics (ISNE) (pp. 1-4).
15.Y. Hu, K. C. Chang*, L. Li and Z. Wang, “Interfacial Modification of Thin Film Transistor via Supercritical Fluids Treatment and Mechanism Exploration”, 2021 9th International Symposium on Next Generation Electronics (ISNE) (pp. 1-4).
2020
14.B. L. Liu, H. C. Chin, H. Lou, K. C. Chang* and X. Lin*, “Charge Plasma-Based Junctionless FinFET for The Immune of Fin Sidewall Angle Variation”, 2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT) (pp. 1-3).
13.J. Wu, H. Fu, Y. Zheng, K. C. Chang, S. Zhang, H. Y. Fu & Q. Li*, “Precise tuning of epsilon-near-zero properties in indium tin oxide nanolayer by supercritical carbon dioxide”, Conference on Lasers and Electro-Optics/Pacific Rim (CLEO-PR). 2020
12.K. Liu, H. C. Chin, H. Lou, K. C. Chang and X. Lin*, “Variation Investigation of Junction-less Transistor with Side-wall Charge-plasma Structure Induced by Line Edge Roughness”, 2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT) (pp. 1-3).
11.X. Zhang, R. Niu, Z. Huang, T. Dai, K. C. Chang* and X. Lin*, “A Study on the Threshold Voltage Shift under Gate-pulse Stress in D-mode GaN MIS-HEMTs”, 2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT) (pp. 1-3).
10.Z. Wang, Y. Hu, Q. Lin, L. Li and K. C. Chang*, “Performance Improvement of a‐IGZO Thin‐Film Transistor By Using Ta2O5/SiO2 Double‐layer Gate Dielectric” In SID Symposium Digest of Technical Papers (Vol. 52, pp. 440-442). 2020
2019
9.M. H. Liu, K. C. Chang, X. N. Lin*, L. Li and Y. F. Jin*, “Positive Shift Suppression in Threshold Voltage of AlGaN/GaN MIS-HEMTs”, 2019 8th International Symposium on Next Generation Electronics, 2019.
DOI:10.1109/ISNE.2019.8896561
Article web link：https://doi.org/10.1109/ISNE.2019.8896561
2017
8.M. Yuan, W. Luo, X. T. Xu, K. C. Chang, T. C. Chang, C. Liu and H. Zhou*, “Organometal Tri-halide Perovskite Resistive Switching Device with PMMA Electrode Interlayer”, IEEE International Conference on Electron and Solid-State Circuits, 2017.
DOI:10.1109/EDSSC.2017.8126466
Article web link：https://doi.org/10.1109/EDSSC.2017.8126466
7.C. Y. Lin, Y. C. Chen, M. Q. Gu, C. H. Pan, F. Y. Jin, Y. T. Tseng, C. C. Hsieh, X. H. Wu, M. C. Chen, Y. F. Chang*, F. Zhou, B. Fowler, K. C. Chang, T. M. Tsai, T. C. Chang, Y. G. Zhao, S. M. Sze, S. Banetjee and J. C Lee, “A Universal Model for Interface-Type Threshold Switching Phenomena by Comprehensive Study of Vanadium Oxide-Based Selector”, 2017 International Symposium on VLASI Technology, Systems and Application (VLSI-TSA), 2017.
DOI:10.1109/VLSI-TSA.2017.7942474
Article web link：https://doi.org/10.1109/VLSI-TSA.2017.7942474
2016
6.Y. C. Chen, Y. F. Chang*, B. Fowler, F. Zhou, X. H. Wu, C. C. Hsieh, H. L. Chang, C. H. Pan, M. C. Chen, K. C. Chang, T. M. Tsai, T. C. Chang and J. C. Lee, “Comprehensive Study of Intrinsic Unipolar SiOx-Based ReRAM Characteristics in AC Frequency Response and Low Voltage (< 2V) Operation”, 2016 International Symposium on VLSI Technology, Systems and Application(VLSI-TSA).
2015
5.J. Chen, J. C. Lou, K. C. Chang, T. C. Chang, T. M. Tsai, C. H. Pan, “Influence of Nitrogen Buffering on Oxygen in Indium-Tin-Oxide Capped Resistive Random Access Memory with NH3 Treatment”, 2015 IEEE 11th International Conference on ASIC (ASICON).
DOI:10.1109/ASICON.2015.7516973
Article web link：https://doi.org/10.1109/ASICON.2015.7516973
2014
4.K. C. Chang, R. Zhang, T. C. Chang, T. M. Tsai, T. J. Chu, H. L. Chen, C. C. Shih, C. H. Pan, Y. T. Su, P. J. Wu and Sze S.M, “High Performance, Excellent Reliability Multifunctional Graphene Oxide Doped Memristor Achieved by Self-Protective Compliance Current Structure”, 2014 IEEE International Electron Devices Meeting (IEDM).
3.J. Li*, Y. F. Chang, B. Fowler, Y. C. Chen, T. M. Tsai, K. C. Chang, M. C. Chen, T. C. Chang, S. M. Sze, E. T. Yu and J. C. Lee, “Resistive Switching of SiOx with One Diode-One Resistor Nanopillar Architecture Fabricated Via Nanosphere Lithography”, 2014 72nd Annual Device Research Conference (DRC).
2013
2.M. C. Chen*, T. C. Chang, Y. C. Chiu, S. C. Chen, S. Y. Huang, Y. E. Syu, K. C. Chang, H. C. Huang, T. M. Tsai, D. S. Gan and IEEE, “Effect of Electrode Material on Resistive Switching Characteristics in TaON Nonvolatile Memory Devices”, Symposium on General Student Poster Session held during the 223rd Meeting of the Electrochemical-Society (ECS), 2013
DOI:10.1149/05329.0001ecst
Article web link：https://doi.org/10.1149/05329.0001ecst
2012
1.J. C. Jhu*, T. C. Chang, G. W. Chang, T. M. Tsai, Y. E. Syu, F. Y. Jian, K. C. Chang and Y. H. Tai, “N2O Plasma Treatment Suppressed Temperature-dependent Point Defects Formation with Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors”, Symposium on Thermal and Plasma CVD of Nanostructures and Their Applications held during the 221st Meeting of the Electrochemical-Society (ECS), 2012
DOI:10.1149/04531.0047ecst
Article web link：https://doi.org/10.1149/04531.0047ecst
