Congratulations to Dai Tianjiao for publishing a cover journal paper on the well-known journal Nanoscale

Congratulations to Dai Tianjiao for publishing a cover journal paper entitled "Unveiling the influence of surrounding materials and realization of multi-level storage in resistive switching memory" in Nanoscale magazine

Article web link: https://doi.org/10.1039/d0nr05900e

Abstract: This paper achieves RRAM multilevel storage functionality and scalability by introducing materials with relatively high dielectric constants around the RRAM device. Devices designed by this principle exhibit a variety of different nonvolatile conductance states. Moreover, it also solves the problem of voltage increase when the device is miniaturized, increases the capacity of the chip, and reduces the power consumption in the process of device miniaturization. COMSOL simulations can corroborate that the improved performance is related to a more concentrated electric field around the conductive filaments, which facilitates controlled connection and breakage of the resistive filaments. Therefore, in our study, properly designed surrounding material RRAM devices show great promise in improving the performance of RRAM and extending its application possibilities.