Congratulations to Peng Zehui for publishing a paper in the well-known journal Advanced Functional Materials

Congratulations to Peng Zehui for publishing a journal paper entitled "HfO₂-Based Memristor as an Artificial Synapse for Neuromorphic Computing with Tri-Layer HfO₂/BiFeO₃/HfO₂ Design" in the international journal Advanced Functional Materials

IF：19.978

Article web link：https://onlinelibrary.wiley.com/doi/10.1002/adfm.202107131

Introduction to the article:

Neuromorphic devices are one of the most emerging electronic components to realize artificial nervous systems and replace traditional complementary metal-oxide-semiconductor devices recently. In this work, a three-layer HfO2/BiFeO3(BFO)/HfO2 memristor was designed by inserting a conventional ferroelectric BFO layer with a thickness of about 4 nm after thickness optimization. The novelly designed memristors show excellent resistive switching (RS) performance, such as a memory window of 104 and multilevel memory capability. Remarkably, basic synaptic functions can be successfully achieved on a linear basis with conductance modulation. Based on the pattern recognition simulation of neuromorphic network, the recognition accuracy rate is as high as 91.2%. To explore RS performance enhancement and artificial synaptic behavior, conducting filaments (CFs) composed of hafnium (Hf) single crystals with a hexagonal lattice structure were observed using high-resolution transmission electron microscopy. It is reasonable to believe that the insertion of sufficient oxygen vacancies in the BFO film plays a crucial role in regulating the morphology and growth of the Hf conductive filaments, which leads to synapses and enhanced RS behavior, thus demonstrating the memristor Potential for use in neuromorphic computing.