Congratulations to Dai Tianjiao for publishing a journal paper in the well-known journal Applied Physics Letters

Congratulations to Dai Tianjiao for publishing a journal paper entitled "The observation of Gaussian distribution and origin identification of deep defects in AlGaN/GaN MIS-HEMT" in Applied Physics Letters, an international journal in JCR Region II

Article web link：https://aip.scitation.org/doi/10.1063/5.0088928

Introduction to the article:

This paper proposes a mathematical-physical correlation method to monitor the deep defect response by electrical measurements and calculate the density of states by mathematical processing of the design. The Gaussian distribution of the extracted deep defects is discussed according to the theoretical model of the density of states. The accuracy of the method is also verified by 1/f low-frequency noise analysis. The origin of the deep defects was investigated by transmission electron microscopy, X-ray photoelectron spectroscopy, and photoluminescence analysis, and a molecular model was constructed. Therefore, combining electrical measurements, mathematical data processing, and material analysis, deep defects are studied from multiple perspectives, which provides inspiration for the future comprehensive study of deep defects in GaN-based devices.