Congratulations to Dr. Li Lei for publishing a journal cover paper in the well-known journal Nanoscale

Congratulations to Dr. Li Lei for publishing a journal cover paper entitled "Achieving complementary resistive switching and multi-bit storage goals by modulating the dual-ion reaction through supercritical fluid-assisted ammonia" in the international journal Nanoscale.

Article web link: https://pubs.rsc.org/en/content/articlelanding/2021/NR/D1NR03356E

Introduction to the article:

Complementary resistive switching (CRS) is at the heart of memristor crossbar array architectures for neuromorphic computing because of its ability to avoid sneaking path currents. However, previous approaches to achieve CRS are usually based on complex device structure design and fabrication processes or meticulous current-limiting measurement procedures. In this study, a supercritical fluid-assisted ammoniation (SFA) process is reported to achieve CRS in a single device by endowing pristine common switching materials with dual-ion operation. In addition to the self-compatible CRS behavior, the multi-bit memory function is realized through the SFA process with excellent retention and reliability. These substantially evolved resistance phenomena are confirmed by our chemical reaction model and physical mechanism model, material analysis and current conduction fitting analysis results. The findings in this study suggest the most efficient way to achieve CRS with only one chemical procedure and significantly improve device performance. Furthermore, the supercritical fluid approach offers great possibilities for the further development of materials and electronic devices via cryogenic processes, with semiconductor fabrication compatibility and environmental friendliness.