Congratulations to Zheng Fei for publishing a journal paper in the well-known journal Advanced Materials Technologies

Congratulations to Zheng Fei for publishing a journal paper entitled "Self-Alignment Embedded Thin-Film Transistor with High Transparency and Optimized Performance" in the international journal Advanced Materials Technologies

Article web link：https://onlinelibrary.wiley.com/doi/10.1002/admt.202200879

Introduction to the article:

Amorphous oxide semiconductor thin-film transistors (AOS TFTs) have shown great potential for applications in increasingly advanced transparent and flexible electronic devices with high requirements for high speed, high transparency, and low power consumption. However, the typical back channel etch (BCE) configuration used in most TFTs still suffers from poor gate controllability, severe electric field dispersion, and relatively large parasitic capacitance and contact resistance. Here, a new embedded structure for TFTs with self-alignment and simpler fabrication process is proposed in this work, which outperforms conventional BCE counterparts in the aforementioned aspects. A more concentrated electric field, higher gate control capability, and lower contact resistance are achieved in embedded TFTs. As a result, excellent electrical properties with a subthreshold swing of 106.7 mV dec-1 and a mobility as high as 32.10 cm2 V-1 s-1 were obtained. In addition, leakage current and contact resistance are significantly reduced compared with conventional BCE structure TFTs. With the help of Silvaco TCAD simulation, the performance and mechanism behind it were cross-validated from another perspective. Overall, this embedded structure provides TFTs with very attractive properties, and also enables other devices to exploit this structure to obtain new possibilities for wider applications.